Showing 1–2 of 2 results for author: Shoron, O F
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Two-Dimensional Dirac Fermions in Thin Films of Cd3As2
Authors:
Luca Galletti,
Timo Schumann,
Omor F. Shoron,
Manik Goyal,
David A. Kealhofer,
Honggyu Kim,
Susanne Stemmer
Abstract:
Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neu…
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Two-dimensional states in confined thin films of the three-dimensional Dirac semimetal Cd3As2 are probed by transport and capacitance measurements under applied magnetic and electric fields. The results establish the two-dimensional Dirac electronic spectrum of these states. We observe signatures of p-type conduction in the two-dimensional states as the Fermi level is tuned across their charge neutrality point and the presence of a zero energy Landau level, all of which indicate topologically non-trivial states. The resistance at the charge neutrality point is approximately h/e2 and increases rapidly under the application of a magnetic field. The results open many possibilities for gate-tunable topological devices and for the exploration of novel physics in the zero energy Landau level.
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Submitted 26 February, 2018;
originally announced February 2018.
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Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs
Authors:
Sanyam Bajaj,
Omor F. Shoron,
Pil Sung Park,
Sriram Krishnamoorthy,
Fatih Akyol,
Ting-Hsiang Hung,
Shahed Reza,
Eduardo M. Chumbes,
Jacob Khurgin,
Siddharth Rajan
Abstract:
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10^7 cm/s at a low sheet charge density of 7.8 x 10^11 cm-2. A new optical phonon emission-bas…
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We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 x 10^7 cm/s at a low sheet charge density of 7.8 x 10^11 cm-2. A new optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated LO phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.
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Submitted 27 August, 2015;
originally announced August 2015.
