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Planar Josephson Junctions Templated by Nanowire Shadowing
Authors:
P. Zhang,
A. Zarassi,
M. Pendharkar,
J. S. Lee,
L. Jarjat,
V. Van de Sande,
B. Zhang,
S. Mudi,
H. Wu,
S. Tan,
C. P. Dempsey,
A. P. McFadden,
S. D. Harrington,
B. Shojaei,
J. T. Dong,
A. -H. Chen,
M. Hocevar,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technol…
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More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technologies. When both junction contacts are placed on the same surface, such as a two-dimensional material, the junction is called ``planar". One outstanding challenge is that not all materials are amenable to the standard planar junction fabrication. The device quality, rather than the intrinsic characteristics, may be defining the results. Here, we introduce a technique in which nanowires are placed on the surface and act as a shadow mask for the superconductor. The advantages are that the smallest dimension is determined by the nanowire diameter and does not require lithography, and that the junction is not exposed to chemicals such as etchants. We demonstrate this method with an InAs quantum well, using two superconductors - Al and Sn, and two semiconductor nanowires - InAs and InSb. The junctions exhibit critical current levels consistent with transparent interfaces and uniform width. We show that the template nanowire can be operated as a self-aligned electrostatic gate. Beyond single junctions, we create SQUIDs with two gate-tunable junctions. We suggest that our method can be used for a large variety of quantum materials including van der Waals layers, topological insulators, Weyl semimetals and future materials for which proximity effect devices is a promising research avenue.
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Submitted 8 November, 2022;
originally announced November 2022.
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Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices
Authors:
Hao Zhang,
Michiel W. A. de Moor,
Jouri D. S. Bommer,
Di Xu,
Guanzhong Wang,
Nick van Loo,
Chun-Xiao Liu,
Sasa Gazibegovic,
John A. Logan,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order…
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We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.
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Submitted 27 January, 2021;
originally announced January 2021.
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Strong Electron-Electron Interactions of a Tomonaga--Luttinger Liquid Observed in InAs Quantum Wires
Authors:
Yosuke Sato,
Sadashige Matsuo,
Chen-Hsuan Hsu,
Peter Stano,
Kento Ueda,
Yuusuke Takeshige,
Hiroshi Kamata,
Joon Sue Lee,
Borzoyeh Shojaei,
Kaushini Wickramasinghe,
Javad Shabani,
Chris Palmstrøm,
Yasuhiro Tokura,
Daniel Loss,
Seigo Tarucha
Abstract:
We report strong electron-electron interactions in quantum wires etched from an InAs quantum well, a material known to have strong spin-orbit interactions. We find that the current through the wires as a function of the bias voltage and temperature follows the universal scaling behavior of a Tomonaga--Luttinger liquid. Using a universal scaling formula, we extract the interaction parameter and fin…
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We report strong electron-electron interactions in quantum wires etched from an InAs quantum well, a material known to have strong spin-orbit interactions. We find that the current through the wires as a function of the bias voltage and temperature follows the universal scaling behavior of a Tomonaga--Luttinger liquid. Using a universal scaling formula, we extract the interaction parameter and find strong electron-electron interactions, increasing as the wires become more depleted. We establish theoretically that spin-orbit interactions cause only minor modifications of the interaction parameter in this regime, indicating that genuinely strong electron-electron interactions are indeed achieved in the device. Our results suggest that etched InAs wires provide a platform with both strong electron-electron and strong spin-orbit interactions.
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Submitted 29 October, 2018; v1 submitted 15 October, 2018;
originally announced October 2018.
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Contribution of top barrier materials to high mobility in near-surface InAs quantum wells grown on GaSb(001)
Authors:
Joon Sue Lee,
Borzoyeh Shojaei,
Mihir Pendharkar,
Mayer Feldman,
Kunal Mukherjee,
Chris J. Palmstrøm
Abstract:
Near-surface InAs two-dimensional electron gas (2DEG) systems have great potential for realizing networks of multiple Majorana zero modes towards a scalable topological quantum computer. Improving mobility in the near-surface 2DEGs is beneficial for stable topological superconducting states as well as for correlation of multiple Majorana zero modes in a complex network. Here, we investigate near-s…
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Near-surface InAs two-dimensional electron gas (2DEG) systems have great potential for realizing networks of multiple Majorana zero modes towards a scalable topological quantum computer. Improving mobility in the near-surface 2DEGs is beneficial for stable topological superconducting states as well as for correlation of multiple Majorana zero modes in a complex network. Here, we investigate near-surface InAs 2DEGs (13 nm away from the surface) grown on GaSb(001) substrates, whose lattice constant is closely matched to InAs, by molecular beam epitaxy. The effect of 10-nm-thick top barrier to the mobility is studied by comparing Al$_{0.9}$Ga$_{0.1}$Sb and In$_{0.75}$Ga$_{0.25}$As as a top barrier on otherwise identical InAs quantum wells grown with identical bottom barrier and buffer layers. A 3-nm-thick capping layer on Al$_{0.9}$Ga$_{0.1}$Sb top barrier also affects the 2DEG electronic transport properties by modifying scattering from 2D remote ionized impurities at the surface. The highest transport mobility of 650,000 cm$^2$/Vs with an electron density of 3.81 $\times$ 10$^{11}$ cm$^{-2}$ was observed in an InAs 2DEG with an Al$_{0.9}$Ga$_{0.1}$Sb top barrier and an In$_{0.75}$Ga$_{0.25}$As capping layer. Analysis of Shubnikov-de Haas oscillations in the high mobility sample suggests that long-range scattering, such as remote ionized impurity scattering, is the dominant scattering mechanism in the InAs 2DEGs grown on GaSb(001) substrates. In comparison to InAs quantum wells grown on lattice-mismatched InP, the ones grown on GaSb show smoother surface morphology and higher quantum mobility. However, In$_{0.75}$Ga$_{0.25}$As top barrier in InAs quantum well grown on GaSb limits the transport mobility by charged dislocations formed in it, in addition to the major contribution to scattering from the alloy scattering.
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Submitted 18 September, 2018;
originally announced September 2018.
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Quantized Majorana conductance
Authors:
Hao Zhang,
Chun-Xiao Liu,
Sasa Gazibegovic,
Di Xu,
John A. Logan,
Guanzhong Wang,
Nick van Loo,
Jouri D. S. Bommer,
Michiel W. A. de Moor,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrom,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this qua…
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Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this quantization is a direct consequence of the famous Majorana symmetry, 'particle equals antiparticle'. The Majorana symmetry protects the quantization against disorder, interactions, and variations in the tunnel coupling. Previous experiments, however, have shown ZBPs much smaller than 2e2/h, with a recent observation of a peak-height close to 2e2/h. Here, we report a quantized conductance plateau at 2e2/h in the zero-bias conductance measured in InSb semiconductor nanowires covered with an Al superconducting shell. Our ZBP-height remains constant despite changing parameters such as the magnetic field and tunnel coupling, i.e. a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins, by investigating its robustness on electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of non-Abelian Majorana zero-modes in the system, consequently paving the way for future braiding experiments.
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Submitted 29 October, 2017;
originally announced October 2017.
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Materials considerations for forming the topological insulator phase in InAs/GaSb heterostructures
Authors:
Borzoyeh Shojaei,
Anthony P. McFadden,
Mihir Pendharkar,
Joon Sue Lee,
Michael E. Flatté,
Chris J. Palmstrøm
Abstract:
In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's potential landscape, however, is subject to microscopic perturbations originating from material imperfections. In this work, the effect of disorder on the electron…
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In an ideal InAs/GaSb bilayer of appropriate dimension in-plane electron and hole bands overlap and hybridize, and a topologically non-trivial, or quantum spin Hall (QSH) insulator, phase is predicted to exist. The in-plane dispersion's potential landscape, however, is subject to microscopic perturbations originating from material imperfections. In this work, the effect of disorder on the electronic structure of InAs/GaSb bilayers was studied by the temperature and magnetic field dependence of the resistance of a dual-gated heterostructures gate-tuned through the inverted to normal gap regimes. Conduction in the inverted (predicted topological) regime was qualitatively similar to behavior in a disordered two-dimensional system. The impact of charged impurities and interface roughness on the formation of topologically protected edge states and an insulating bulk was estimated. The experimental evidence and estimates of disorder in the potential landscape indicated the potential fluctuations in state-of-the-art films are sufficiently strong such that conduction in the predicted topological insulator (TI) regime was dominated by a symplectic metal phase rather than a TI phase. The implications are that future efforts must address disorder in this system and focus must be placed on the reduction of defects and disorder in these heterostructures if a TI regime is to be achieved.
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Submitted 27 October, 2017;
originally announced October 2017.
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Transport studies of epi-Al/InAs 2DEG systems for required building-blocks in topological superconductor networks
Authors:
Joon Sue Lee,
Borzoyeh Shojaei,
Mihir Pendharkar,
Anthony P. McFadden,
Younghyun Kim,
Henri J. Suominen,
Morten Kjaergaard,
Fabrizio Nichele,
Charles M. Marcus,
Chris J. Palmstrøm
Abstract:
One-dimensional (1D) electronic transport and induced superconductivity in semiconductor nano-structures are crucial ingredients to realize topological superconductivity. Our approach for topological superconductivity employs a two-dimensional electron gas (2DEG) formed by an InAs quantum well, cleanly interfaced with a superconductor (epitaxial Al). This epi-Al/InAs quantum well heterostructure i…
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One-dimensional (1D) electronic transport and induced superconductivity in semiconductor nano-structures are crucial ingredients to realize topological superconductivity. Our approach for topological superconductivity employs a two-dimensional electron gas (2DEG) formed by an InAs quantum well, cleanly interfaced with a superconductor (epitaxial Al). This epi-Al/InAs quantum well heterostructure is advantageous for fabricating large-scale nano-structures consisting of multiple Majorana zero modes. Here, we demonstrate building-block transport studies using a high-quality epi-Al/InAs 2DEG heterostructure, which could be put together to realize the proposed 1D nanowire-based nano-structures and 2DEG-based networks that could host multiple Majorana zero modes: 1D transport using 1) quantum point contacts and 2) gate-defined quasi-1D channels in the InAs 2DEG as well as induced superconductivity in 3) a ballistic Al-InAs 2DEG-Al Josephson junction. From 1D transport, systematic evolution of conductance plateaus in half-integer conductance quanta are observed as a result of strong spin-orbit coupling in the InAs 2DEG. Large IcRn, a product of critical current and normal state resistance from the Josephson junction, indicates that the interface between the epitaxial Al and the InAs 2DEG is highly transparent. Our results of electronic transport studies based on the 2D approach suggest that the epitaxial superconductor/2D semiconductor system is suitable for realizing large-scale nano-structures for quantum computing applications.
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Submitted 14 May, 2017;
originally announced May 2017.
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Epitaxy of Advanced Nanowire Quantum Devices
Authors:
Sasa Gazibegovic,
Diana Car,
Hao Zhang,
Stijn C. Balk,
John A. Logan,
Michiel W. A. de Moor,
Maja C. Cassidy,
Rudi Schmits,
Di Xu,
Guanzhong Wang,
Peter Krogstrup,
Roy L. M. Op het Veld,
Jie Shen,
Daniël Bouman,
Borzoyeh Shojaei,
Daniel Pennachio,
Joon Sue Lee,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Leo P. Kouwenhoven,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers
Abstract:
Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exc…
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Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought in contact with a superconductor. To fully exploit the potential of non-Abelian anyons for topological quantum computing, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of single-crystalline nanowires coupled to superconducting islands. Here, we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks having a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire "hashtags" reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens new avenues for the realization of epitaxial 3-dimensional quantum device architectures.
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Submitted 10 December, 2021; v1 submitted 3 May, 2017;
originally announced May 2017.
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Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum
Authors:
A. C. C. Drachmann,
H. J. Suominen,
M. Kjaergaard,
B. Shojaei,
C. J. Palmstrøm,
C. M. Marcus,
F. Nichele
Abstract:
We demonstrate the transfer of the superconducting properties of NbTi---a large-gap high-critical-field superconductor---into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multipl…
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We demonstrate the transfer of the superconducting properties of NbTi---a large-gap high-critical-field superconductor---into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multiple Andreev reflection reveal near-unity transparency, with an induced gap $Δ^*=0.50~\mathrm{meV}$ and a critical temperature of $7.8~\mathrm{K}$. Tunneling spectroscopy yields a hard induced gap in the InAs adjacent to the superconductor of $Δ^*=0.43~\mathrm{meV}$ with substructure characteristic of both Al and NbTi.
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Submitted 30 November, 2016;
originally announced November 2016.
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On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers
Authors:
B. Shojaei,
A. C. C. Drachmann,
M. Pendharkar,
D. J. Pennachio,
M. P. Echlin,
P. G. Callahan,
S. Kraemer,
T. M. Pollock,
C. M. Marcus,
C. J. Palmstrøm
Abstract:
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier de…
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The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K.
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Submitted 13 October, 2016; v1 submitted 12 October, 2016;
originally announced October 2016.
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Gating of high-mobility InAs metamorphic heterostructures
Authors:
J. Shabani,
A. P. McFadden,
B. Shojaei,
C. J. Palmstrøm
Abstract:
We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge th…
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We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In$_{0.75}$Al$_{0.25}$As as the barrier without an In$_{0.75}$Ga$_{0.25}$As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.
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Submitted 4 December, 2014; v1 submitted 11 August, 2014;
originally announced August 2014.
