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Spectroscopic signatures of native charge compensation in Mg doped GaN Nanorods
Authors:
Rajendra Kumar,
Sanjay Nayak,
S. M. Shivaprasad
Abstract:
We study the native charge compensation effect in Mg doped GaN nanorods (NRs), grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE), using Raman, photoluminescence (PL) and X-ray photoelectron spectroscopies (XPS). The XPS valence band analysis shows that upon Mg incorporation the E$_F$-E$_{VBM}$ reduces, suggesting the compensation of the native n-type character of GaN NRs. Raman spectroscopic…
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We study the native charge compensation effect in Mg doped GaN nanorods (NRs), grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE), using Raman, photoluminescence (PL) and X-ray photoelectron spectroscopies (XPS). The XPS valence band analysis shows that upon Mg incorporation the E$_F$-E$_{VBM}$ reduces, suggesting the compensation of the native n-type character of GaN NRs. Raman spectroscopic studies on these samples reveal that the line shape of longitudinal phonon plasmon (LPP) coupled mode is sensitive to Mg concentration and hence to background n-type carrier density. We estimate a two order of native charge compensation in GaN NRs upon Mg-doping with a concentration of 10$^{19}$-10$^{20}$ atoms cm$^{-3}$. Room temperature (RT) PL measurements and our previous electronic structure calculations are used to identify the atomistic origin of this compensation effect.
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Submitted 10 August, 2018; v1 submitted 3 July, 2018;
originally announced July 2018.
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Morphology dependent surface properties of nanostructured GaN films grown by molecular beam epitaxy
Authors:
Abhijit Chatterjee,
S. P. Swathi,
S. M. Shivaprasad
Abstract:
The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology has been studied using scanning electron microscopy and atomic force microscopy, and the bandstructure, defect and emission properties have been studied by X ray photoelectron spectroscopy and cathodoluminescence spectr…
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The effect of film morphology on its surface chemistry and band structure has been analyzed for gallium nitride epitaxial films grown by molecular beam epitaxy. The film morphology has been studied using scanning electron microscopy and atomic force microscopy, and the bandstructure, defect and emission properties have been studied by X ray photoelectron spectroscopy and cathodoluminescence spectroscopy. It was found that the highly porous GaN nanowall network shows the highest relative conductivity and does not have defect related luminescence. The flatter films were more resistive and showed yellow luminescence, due to Ga vacancies. GaN nanowall network exhibited a Fermi level pinning at (1.8 $\pm$ 0.2) eV above valence band maximum, suggesting the presence of a Ga adlayer on the surface of GaN nanowall network. Ar ion sputtering was found to preferentially sputter N atoms leading to surface metallization.
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Submitted 8 January, 2018;
originally announced January 2018.
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Vacancy defect in bulk and at (10$\overline{1}$0) surface of GaN: A combined first-principles theoretical and experimental analysis
Authors:
Sanjay Nayak,
Mit H. Naik,
Manish Jain,
U. V. Waghmare,
S. M. Shivaprasad
Abstract:
We determine atomic and electronic structure, formation energy, stability and magnetic properties of native point defects, such as Gallium (Ga) and Nitrogen (N) vacancies in bulk and at non-polar (10$\overline{1}$0) surface of wurtzite Gallium Nitride (\textit w-GaN) using, first-principles calculations based on Density Functional Theory (DFT). Under both Ga-rich and N-rich conditions, formation e…
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We determine atomic and electronic structure, formation energy, stability and magnetic properties of native point defects, such as Gallium (Ga) and Nitrogen (N) vacancies in bulk and at non-polar (10$\overline{1}$0) surface of wurtzite Gallium Nitride (\textit w-GaN) using, first-principles calculations based on Density Functional Theory (DFT). Under both Ga-rich and N-rich conditions, formation energy of N-vacancies is significantly lower than that of Ga-vacancies in bulk and at (10$\overline{1}$0) surface. Experimental evidence of the presence of N-vacancies was noted from electron energy loss spectroscopy measurements which further correlated with the high electrical conductivity observed in GaN nanowall network. We find that the Fermi level pins at 0.35 $\pm$0.02 eV below Ga derived surface state. Presence of atomic steps in the nanostructure due to formation of N-vacancies at the (10$\overline{1}$0) surface makes its electronic structure metallic. Clustering of N-vacancies and Ga-Ga metallic bond formation near these vacancies, is seen to be another source of electrical conductivity of faceted GaN nanostructure that is observed experimentally.
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Submitted 14 December, 2017; v1 submitted 16 October, 2017;
originally announced October 2017.
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Enhanced radial growth of Mg doped GaN nanorods: A combined experiment and first-principles based analysis
Authors:
Sanjay Nayak,
Rajendra Kumar,
Nagaraja KK,
S. M. Shivaprasad
Abstract:
We discuss the microstructural origin of enhanced radial growth in magnesium (Mg) doped gallium nitride (GaN) nanorods (NRs) using electron microscopy and \textit{first-principles} Density Functional Theory calculations. Experimentally, we find the Mg incorporation increases surface coverage of the grown samples and the height of NRs decreases as a consequence of an increase radial growth rate. We…
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We discuss the microstructural origin of enhanced radial growth in magnesium (Mg) doped gallium nitride (GaN) nanorods (NRs) using electron microscopy and \textit{first-principles} Density Functional Theory calculations. Experimentally, we find the Mg incorporation increases surface coverage of the grown samples and the height of NRs decreases as a consequence of an increase radial growth rate. We also observed the coalescence of NRs becomes prominent and the critical height of coalescence decreases with the increase in Mg concentration. From \textit{first-principles} calculations, we find the surface free energy of Mg doped surface reduces with increasing Mg concentration in the samples. The calculations further suggests a reduction in the diffusion barrier of Ga adatoms along [11$\overline{2}$0] on the side wall surface of the NRs, possibly the primary reason for the observed enhancement in the radial growth.
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Submitted 22 September, 2017; v1 submitted 13 September, 2017;
originally announced September 2017.
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On the origin of Blue Luminescence in Mg doped GaN
Authors:
Sanjay Nayak,
Mukul Gupta,
Umesh V. Waghmare,
S. M. Shivaprasad
Abstract:
We uncover the origin of blue luminescence (BL) peak in Mg doped GaN thin film using a combination of experimental X-ray absorption near edge spectroscopy (XANES), first-principles calculations based on density functional theory and full multiple scattering theoretical analysis of various possible defect complexes and their XANES signatures. We demonstrate that a defect complex composed of Mg subs…
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We uncover the origin of blue luminescence (BL) peak in Mg doped GaN thin film using a combination of experimental X-ray absorption near edge spectroscopy (XANES), first-principles calculations based on density functional theory and full multiple scattering theoretical analysis of various possible defect complexes and their XANES signatures. We demonstrate that a defect complex composed of Mg substituted at Ga site (MgGa) and Mg at interstitial site (Mgi) is primarily responsible for the observed BL by Donor-Acceptor Pair transition (DAP) associated with a deep donor state in the gap. It correlates with a higher (lower) oxidation state of N (Ga) in heavily Mg doped GaN than in its pristine structure, evident in our experiments as well as calculations. Physical and chemical mechanisms identified here point out a route to achieving efficient p-type GaN.
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Submitted 18 August, 2017; v1 submitted 14 August, 2017;
originally announced August 2017.
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Edge enhanced growth induced shape transition in the formation of GaN Nanowall Network
Authors:
Sanjay Nayak,
Rajendra Kumar,
S. M. Shivaprasad
Abstract:
We address the mechanism of early stages of growth and shape transition of the unique nanowall network (NwN) nanostructure of GaN by experimentally monitoring its controlled growth using PA-MBE and complementing it by \textit{first-principles} calculations. Using electron microscopy, we observe the formation of tetrahedron shaped (3 faced pyramid) islands at early stages of growth, which later gro…
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We address the mechanism of early stages of growth and shape transition of the unique nanowall network (NwN) nanostructure of GaN by experimentally monitoring its controlled growth using PA-MBE and complementing it by \textit{first-principles} calculations. Using electron microscopy, we observe the formation of tetrahedron shaped (3 faced pyramid) islands at early stages of growth, which later grows anisotropically along their edges of the (20$\overline{2}$1) facets, to form the wall like structure. The mechanism of this crystal growth is discussed in light of surface free energies of the different surfaces, adsorption energy and diffusion barrier of Ga ad-atoms on the (20$\overline{2}$1) facets. By \textit{first-principles} calculations, we find that the diffusion barrier of ad-atoms decreases with decreasing width of facets, and is responsible for the anisotropic growth and formation of the nanowall network. This study suggest that formation of NwN is a archetype example of structure dependent attachment kinetic (SDAK) instability induced shape transition in thin film growth.
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Submitted 10 August, 2017;
originally announced August 2017.
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GaN Nanowall Network: A new possible route to obtain efficient p-GaN and enhanced light extraction
Authors:
Sanjay Kumar Nayak,
Mukul Gupta,
S. M. Shivaprasad
Abstract:
We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective Mg incorporation for efficient p-GaN. We report the growth of Mg doped GaN Nanowall network (NwN) by plasma assisted molecular beam epitaxy (PA-MBE) that is characterized by Photoluminescence (PL) spectroscopy, Raman sp…
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We demonstrate that GaN formed in a Nanowall Network (NwN) morphology can overcome fundamental limitations in optoelectronic devices, and enable high light extraction and effective Mg incorporation for efficient p-GaN. We report the growth of Mg doped GaN Nanowall network (NwN) by plasma assisted molecular beam epitaxy (PA-MBE) that is characterized by Photoluminescence (PL) spectroscopy, Raman spectroscopy, high-resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS) and Secondary ion mass spectroscopy (SIMS). We record a photo-luminescence enhancement ($ \approx $3.2 times) in lightly doped GaN as compared to that of undoped NwN. Two distinct (and broad) blue luminescence peaks appears at 2.95 and 2.7 eV for the heavily doped GaN (Mg $>10^{20}$ atoms $cm^{-3}$), of which the 2.95 eV peak is sensitive to annealing is observed. XPS and SIMS measurements estimate the incorporated Mg concentration to be $10^{20}$ atoms $cm^{-3}$ in GaN NwN morphology, while retaining its band edge emission at $\approx$ 3.4 eV. A higher Mg accumulation towards the GaN/Al$_2$O$_3$ interface as compared to the surface was observed from SIMS measurements.
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Submitted 30 November, 2016;
originally announced November 2016.
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Quantum coherence of electrons in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy
Authors:
H. P. Bhasker,
Varun Thakur,
S. M. Shivaprasad,
S. Dhar
Abstract:
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are investigated. Magneto-conductance recorded at low temperatures shows clear signature of weak localization effect in all nanowall samples studied here. The scattering mean f…
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The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are investigated. Magneto-conductance recorded at low temperatures shows clear signature of weak localization effect in all nanowall samples studied here. The scattering mean free path and the phase coherence time, are extracted from the magneto-conductance profile. Electron mobility estimated from scattering mean free path is found to be comparable with those estimated previously from room temperature conductivity data for these samples [Appl. Phys. Lett. 101, 132109 (2012); AIP Conf. Proc. 1583, 252 (2014)], confirming independently the substantial mobility enhancement in these nanowalls as compared to bulk. Our study furthermore reveals that the high electron mobility region extends down to several hundreds of nanometer below the tip of the walls. Like mobility, phase coherence length is found to increase with the reduction of the average wall width. Interestingly, for samples with lower values of the average wall width, phase coherence length is estimated to be as high as 60 micron, which is much larger than those reported for GaN/AlGaN heterostructure based two dimensional electron gas (2DEG) systems.
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Submitted 3 November, 2014;
originally announced November 2014.
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Two dimensional confinement of electrons in nanowall network of GaN leading to high mobility and phase coherence
Authors:
H. P. Bhasker,
Varun Thakur,
S. M. Shivaprasad,
S. Dhar
Abstract:
Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis oriented wedge-shaped GaN nanowalls grown on c-plane sapphire substrate. Our study reveals that negative charges on the side-facets pushes the electron cloud inward re…
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Here, we report an alternative route to achieve two dimensional electron gas (2DEG) in a semiconductor structure. It has been shown that charge accumulation on the side facets can lead to the formation of 2DEG in a network of c-axis oriented wedge-shaped GaN nanowalls grown on c-plane sapphire substrate. Our study reveals that negative charges on the side-facets pushes the electron cloud inward resulting in the formation of 2DEG in the central plane parallel to the wall height. This confinement is evidenced from several orders of magnitude enhancement of electron mobility as compared to bulk, observation of weak localization effect in low temperature magneto-transport studies as well as the reduction of both the elastic and inelastic scattering rates with the average width of the walls. Importantly, the phase coherence length has been found to be as high as 20 μm, which makes the system potentially interesting for spin-tronics. Schrodinger and the Poisson equations are solved self-consistently taking into account the surface charge accumulation effect. The result indeed shows the 2D quantum confinement of electrons even for 40 nm of wall-width.
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Submitted 6 October, 2014;
originally announced October 2014.
