-
Fast thermal relaxation in cavity-coupled graphene bolometers with a Johnson noise read-out
Authors:
D. K. Efetov,
R. -J. Shiue,
Y. Gao,
B. Skinner,
E. Walsh,
H. Choi,
J. Zheng,
C. Tan,
G. Grosso,
C. Peng,
J. Hone,
K. C. Fong,
D. Englund
Abstract:
Since the invention of the bolometer, its main design principles relied on efficient light absorption into a low-heat-capacity material and its exceptional thermal isolation from the environment. While the reduced thermal coupling to its surroundings allows for an enhanced thermal response, it in turn strongly reduces the thermal time constant and dramatically lowers the detector's bandwidth. With…
▽ More
Since the invention of the bolometer, its main design principles relied on efficient light absorption into a low-heat-capacity material and its exceptional thermal isolation from the environment. While the reduced thermal coupling to its surroundings allows for an enhanced thermal response, it in turn strongly reduces the thermal time constant and dramatically lowers the detector's bandwidth. With its unique combination of a record small electronic heat capacity and a weak electron-phonon coupling, graphene has emerged as an extreme bolometric medium that allows for both, high sensitivity and high bandwidths. Here, we introduce a hot-electron bolometer based on a novel Johnson noise readout of the electron gas in graphene, which is critically coupled to incident radiation through a photonic nanocavity. This proof-of-concept operates in the telecom spectrum, achieves an enhanced bolometric response at charge neutrality with a noise equivalent power NEP < 5pW/ Sqrt(Hz), a thermal relaxation time of τ < 34ps, an improved light absorption by a factor ~3, and an operation temperature up to T=300K.
△ Less
Submitted 10 May, 2018; v1 submitted 6 November, 2017;
originally announced November 2017.
-
Ultrafast Graphene Light Emitter
Authors:
Young Duck Kim,
Yuanda Gao,
Ren-Jye Shiue,
Lei Wang,
Ozgur Burak Aslan,
Myung-Ho Bae,
Hyungsik Kim,
Dongjea Seo,
Heon-Jin Choi,
Suk Hyun Kim,
Andrei Nemilentsau,
Tony Low,
Cheng Tan,
Dmitri K. Efetov,
Takashi Taniguchi,
Kenji Watanabe,
Kenneth L. Shepard,
Tony F. Heinz,
Dirk Englund,
James Hone
Abstract:
Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achie…
▽ More
Ultrafast electrically driven nanoscale light sources are critical components in nanophotonics. Compound semiconductor-based light sources for the nanophotonic platforms have been extensively investigated over the past decades. However, monolithic ultrafast light sources with a small footprint remain a challenge. Here, we demonstrate electrically driven ultrafast graphene light emitters that achieve light pulse generation with up to 10 GHz bandwidth, across a broad spectral range from the visible to the near-infrared. The fast response results from ultrafast charge carrier dynamics in graphene, and weak electron-acoustic phonon-mediated coupling between the electronic and lattice degrees of freedom. We also find that encapsulating graphene with hexagonal boron nitride (hBN) layers strongly modifies the emission spectrum by changing the local optical density of states, thus providing up to 460 % enhancement compared to the grey-body thermal radiation for a broad peak centered at 720 nm. Furthermore, the hBN encapsulation layers permit stable and bright visible thermal radiation with electronic temperatures up to 2,000 K under ambient conditions, as well as efficient ultrafast electronic cooling via near-field coupling to hybrid polaritonic modes. These high-speed graphene light emitters provide a promising path for on-chip light sources for optical communications and other optoelectronic applications.
△ Less
Submitted 24 October, 2017;
originally announced October 2017.
-
Self-aligned local electrolyte gating of 2D materials with nanoscale resolution
Authors:
Cheng Peng,
Dmitri K. Efetov,
Sebastien Nanot,
Ren-Jye Shiue,
Gabriele Grosso,
Yafang Yang,
Marek Hempel,
Pablo Jarillo-Herrero,
Jing Kong,
Frank H. L. Koppens,
Dirk Englund
Abstract:
In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scale due to divergence of the fields in dielectrics. This field divergence limits t…
▽ More
In the effort to make 2D materials-based devices smaller, faster, and more efficient, it is important to control charge carrier at lengths approaching the nanometer scale. Traditional gating techniques based on capacitive coupling through a gate dielectric cannot generate strong and uniform electric fields at this scale due to divergence of the fields in dielectrics. This field divergence limits the gating strength, boundary sharpness, and pitch size of periodic structures, and restricts possible geometries of local gates (due to wire packaging), precluding certain device concepts, such as plasmonics and transformation optics based on metamaterials. Here we present a new gating concept based on a dielectric-free self-aligned electrolyte technique that allows spatially modulating charges with nanometer resolution. We employ a combination of a solid-polymer electrolyte gate and an ion-impenetrable e-beam-defined resist mask to locally create excess charges on top of the gated surface. Electrostatic simulations indicate high carrier density variations of $Δn =10^{14}\text{cm}^{-2}$ across a length of 10 nm at the mask boundaries on the surface of a 2D conductor, resulting in a sharp depletion region and a strong in-plane electric field of $6\times10^8 \text{Vm}^{-1}$ across the so-created junction. We apply this technique to the 2D material graphene to demonstrate the creation of tunable p-n junctions for optoelectronic applications. We also demonstrate the spatial versatility and self-aligned properties of this technique by introducing a novel graphene thermopile photodetector.
△ Less
Submitted 27 October, 2016; v1 submitted 24 October, 2016;
originally announced October 2016.
-
High-Responsivity Graphene-Boron Nitride Photodetector and Autocorrelator in a Silicon Photonic Integrated Circuit
Authors:
Ren-Jye Shiue,
Yuanda Gao,
Yifei Wang,
Cheng Peng,
Alexander D. Robertson,
Dmitri K. Efetov,
Solomon Assefa,
Frank H. L. Koppens,
James Hone,
Dirk Englund
Abstract:
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostruc…
▽ More
Graphene and other two-dimensional (2D) materials have emerged as promising materials for broadband and ultrafast photodetection and optical modulation. These optoelectronic capabilities can augment complementary metal-oxide-semiconductor (CMOS) devices for high-speed and low-power optical interconnects. Here, we demonstrate an on-chip ultrafast photodetector based on a two-dimensional heterostructure consisting of high-quality graphene encapsulated in hexagonal boron nitride. Coupled to the optical mode of a silicon waveguide, this 2D heterostructure-based photodetector exhibits a maximum responsivity of 0.36 A/W and high-speed operation with a 3 dB cut-off at 42 GHz. From photocurrent measurements as a function of the top-gate and source-drain voltages, we conclude that the photoresponse is consistent with hot electron mediated effects. At moderate peak powers above 50 mW, we observe a saturating photocurrent consistent with the mechanisms of electron-phonon supercollision cooling. This nonlinear photoresponse enables optical on-chip autocorrelation measurements with picosecond-scale timing resolution and exceptionally low peak powers.
△ Less
Submitted 6 July, 2015; v1 submitted 2 July, 2015;
originally announced July 2015.
-
Enhanced Photodetection in Graphene-Integrated Photonic Crystal Cavity
Authors:
Ren-Jye Shiue,
Xuetao Gan,
Yuanda Gao,
Luozhou Li,
Xinwen Yao,
Attila Szep,
Dennis Walker, Jr.,
James Hone,
Dirk Englund
Abstract:
We demonstrate the controlled enhancement of photoresponsivity in a graphene photodetector by coupling to slow light modes in a long photonic crystal linear defect cavity. Near the Brillouin zone (BZ) boundary, spectral coupling of multiple cavity modes results in broad-band photocurrent enhancement from 1530 nm to 1540 nm. Away from the BZ boundary, individual cavity resonances enhance the photoc…
▽ More
We demonstrate the controlled enhancement of photoresponsivity in a graphene photodetector by coupling to slow light modes in a long photonic crystal linear defect cavity. Near the Brillouin zone (BZ) boundary, spectral coupling of multiple cavity modes results in broad-band photocurrent enhancement from 1530 nm to 1540 nm. Away from the BZ boundary, individual cavity resonances enhance the photocurrent eight-fold in narrow resonant peaks. Optimization of the photocurrent via critical coupling of the incident field with the graphene-cavity system is discussed. The enhanced photocurrent demonstrates the feasibility of a wavelength-scale graphene photodetector for efficient photodetection with high spectral selectivity and broadband response.
△ Less
Submitted 8 November, 2013;
originally announced November 2013.
-
Controlling the Spontaneous Emission Rate of Monolayer MoS$_2$ in a Photonic Crystal Nanocavity
Authors:
Xuetao Gan,
Yuanda Gao,
Kin Fai Mak,
Xinwen Yao,
Ren-Jye Shiue,
Arend van der Zande,
Matthew Trusheim,
Fariba Hatami,
Tony F. Heinz,
James Hone,
Dirk Englund
Abstract:
We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization d…
▽ More
We report on controlling the spontaneous emission (SE) rate of a molybdenum disulfide (MoS$_2$) monolayer coupled with a planar photonic crystal (PPC) nanocavity. Spatially resolved photoluminescence (PL) mapping shows strong variations of emission when the MoS$_2$ monolayer is on the PPC cavity, on the PPC lattice, on the air gap, and on the unpatterned gallium phosphide substrate. Polarization dependences of the cavity-coupled MoS$_2$ emission show a more than 5 times stronger extracted PL intensity than the un-coupled emission, which indicates an underlying cavity mode Purcell enhancement of MoS$_2$ SE rate exceeding a factor of 70.
△ Less
Submitted 3 October, 2013;
originally announced October 2013.
-
High-Contrast Electro-Optic Modulation of a Photonic Crystal Nanocavity by Electrical Gating of Graphene
Authors:
Xuetao Gan,
Ren-Jye Shiue,
Yuanda Gao,
Kin Fai Mak,
Xinwen Yao,
Luozhou Li,
Attila Szep,
Dennis Walker Jr.,
James Hone,
Tony F. Heinz,
Dirk Englund
Abstract:
We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modu…
▽ More
We demonstrate a high-contrast electro-optic modulation of a photonic crystal nanocavity integrated with an electrically gated monolayer graphene. A high quality (Q) factor air-slot nanocavity design is employed for high overlap between the optical field and graphene sheet. Tuning of graphene's Fermi level up to 0.8 eV enables efficient control of its complex dielectric constant, which allows modulation of the cavity reflection in excess of 10 dB for a swing voltage of only 1.5 V. We also observe a controllable resonance wavelength shift close to 2 nm around a wavelength of 1570 nm and a Q factor modulation in excess of three. These observations allow cavity-enhanced measurements of the graphene complex dielectric constant under different chemical potentials, in agreement with a theoretical model of the graphene dielectric constant under gating. This graphene-based nanocavity modulation demonstrates the feasibility of high-contrast, low-power frequency-selective electro-optic nanocavity modulators in graphene-integrated silicon photonic chips.
△ Less
Submitted 2 November, 2012;
originally announced November 2012.
