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Enhancement of superconductivity on thin film of Sn under high pressure
Authors:
Misaki Sasaki,
Masahiro Ohkuma,
Ryo Matsumoto,
Toru Shinmei,
Tetsuo Irifune,
Yoshihiko Takano,
Katsuya Shimizu
Abstract:
We investigated the pressure effects of a superconductivity on thin films of Sn. Elemental superconductor Sn with a body-centered tetragonal structure, $β$-Sn, exhibits superconductivity below the superconducting transition temperature ($T_{\rm c}=3.72$ K) at ambient pressure. $T_{\rm c}$ of Sn increases with lowering dimension such as in thin film and nanowire growth, or by high-pressure applicat…
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We investigated the pressure effects of a superconductivity on thin films of Sn. Elemental superconductor Sn with a body-centered tetragonal structure, $β$-Sn, exhibits superconductivity below the superconducting transition temperature ($T_{\rm c}=3.72$ K) at ambient pressure. $T_{\rm c}$ of Sn increases with lowering dimension such as in thin film and nanowire growth, or by high-pressure application. For thin films, $T_{\rm c}$ exhibits a slight increase up to approximately 4 K compared to the bulk value, attributable to the crystalline size and lattice disorder. By applying pressure on a bulk Sn, $T_{\rm c}$ initially decreases from 3.72 K as the pressure increases. Further increasing pressure up to 10 GPa, $T_{\rm c}$ increases to 5.3 K with the structural transformation. However, the combination of these effects on thin films of Sn, namely, thin-film growth and pressure effects, remains underexplored. In this study, we combined film-growth and pressure-application techniques to further increase $T_{\rm c}$ using a diamond anvil cell with boron-doped diamond electrodes. The drop of the electrical resistance suggesting the onset of $T_{\rm c}$ on the thin film reached above 6 K in $γ$-Sn phase. Further, the upper critical magnetic field was drastically enhanced. Atomic force microscopy suggests that the refinement of the grain size of the thin film under the non-hydrostatic pressure conditions contributes to stabilizing the higher $T_{\rm c}$ of $γ$-Sn.
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Submitted 27 March, 2025; v1 submitted 29 January, 2025;
originally announced January 2025.
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Emergence of Superconductivity at 20 K in Th$_3$P$_4$-type In$_{3-x}$S$_4$ Synthesized by Diamond Anvil Cell with Boron-doped Diamond Electrodes
Authors:
Ryo Matsumoto,
Kazuki Yamane,
Terumasa Tadano,
Kensei Terashima,
Toru Shinmei,
Tetsuo Irifune,
Yoshihiko Takano
Abstract:
The exploration of superconductors in metastable phases by manipulating crystal structures through high-pressure techniques has attracted significant interest in materials science to achieve a high critical temperature ($T_c$). In this study, we report an emergence of novel superconductivity in a metastable phase of Th$_3$P$_4$-type cubic In$_{3-x}$S$_4$ with remarkably high $T_c$ at 20 K under 45…
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The exploration of superconductors in metastable phases by manipulating crystal structures through high-pressure techniques has attracted significant interest in materials science to achieve a high critical temperature ($T_c$). In this study, we report an emergence of novel superconductivity in a metastable phase of Th$_3$P$_4$-type cubic In$_{3-x}$S$_4$ with remarkably high $T_c$ at 20 K under 45 GPa by using an originally designed diamond anvil cell equipped with boron-doped diamond electrodes, which can perform a high-pressure synthesis and an in-situ electrical transport measurement simultaneously. In-situ structural analysis indicates that the In$_{3-x}$S$_4$ appears partially above 40 GPa without heating. The high-pressure annealing treatment induces complete transformation to the Th$_3$P$_4$-type structure, and the defected concentration of x in In$_{3-x}$S$_4$ decreases with increasing annealing temperature. The $T_c$ in In$_{3-x}$S$_4$ is maximized at x = 0 and approaches 20 K. Electronic band calculations show that the high density of states composed of sulfur and indium bands are located at the conduction band bottom near Fermi energy. The record high $T_c$ in In$_{3-x}$S$_4$ among superconducting sulfides accelerates the further exploration of high $T_c$ materials within the Th$_3$P$_4$-type cubic family by using flexibility in crystal structure.
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Submitted 5 September, 2024;
originally announced September 2024.
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Complex pressure-temperature structural phase diagram of honeycomb iridate Cu$_2$IrO$_3$
Authors:
G. Fabbris,
A. Thorn,
W. Bi,
M. Abramchuk,
F. Bahrami,
J. H. Kim,
T. Shinmei,
T. Irifune,
F. Tafti,
A. N. Kolmogorov,
D. Haskel
Abstract:
$\mathrm{Cu_2IrO_3}$ is among the newest layered honeycomb iridates and a promising candidate to harbor a Kitaev quantum spin liquid state. Here, we investigate the pressure and temperature dependence of its structure through a combination of powder x-ray diffraction and x-ray absorption fine structure measurements, as well as $ab$-$initio…
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$\mathrm{Cu_2IrO_3}$ is among the newest layered honeycomb iridates and a promising candidate to harbor a Kitaev quantum spin liquid state. Here, we investigate the pressure and temperature dependence of its structure through a combination of powder x-ray diffraction and x-ray absorption fine structure measurements, as well as $ab$-$initio$ evolutionary structure search. At ambient pressure, we revise the previously proposed $C2/c$ solution with a related but notably more stable $P2_1/c$ structure. Pressures below 8 GPa drive the formation of Ir-Ir dimers at both ambient and low temperatures, similar to the case of $\mathrm{Li_2IrO_3}$. At higher pressures, the structural evolution dramatically depends on temperature. A large discontinuous reduction of the Ir honeycomb interplanar distance is observed around 15 GPa at room temperature, likely driven by a collapse of the O-Cu-O dumbbells. At 15 K, pressures beyond 20 GPa first lead to an intermediate phase featuring a continuous reduction of the interplanar distance, which then collapses at 30 GPa across yet another phase transition. However, the resulting structure around 40 GPa is not the same at room and low temperatures. Remarkably, the reduction in interplanar distance leads to an apparent healing of the stacking faults at room temperature, but not at 15 K. Possible implications on the evolution of electronic structure of $\mathrm{Cu_2IrO_3}$ with pressure are discussed.
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Submitted 3 May, 2021;
originally announced May 2021.
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Interplay between local structure and electronic properties on CuO under pressure
Authors:
V. Cuartero,
V. Monteseguro,
A. Otero-de-la-Roza,
M. El Idrissi,
O. Mathon,
T. Shinmei,
T. Irifune,
A. Sanson
Abstract:
The electronic and local structural properties of CuO under pressure have been investigated by means of X-ray absorption spectroscopy (XAS) at Cu K edge and ab-initio calculations, up to 17 GPa. The crystal structure of CuO consists of Cu motifs within CuO$_4$ square planar units and two elongated apical Cu-O bonds. The CuO$_4$ square planar units are stable in the studied pressure range, with Cu-…
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The electronic and local structural properties of CuO under pressure have been investigated by means of X-ray absorption spectroscopy (XAS) at Cu K edge and ab-initio calculations, up to 17 GPa. The crystal structure of CuO consists of Cu motifs within CuO$_4$ square planar units and two elongated apical Cu-O bonds. The CuO$_4$ square planar units are stable in the studied pressure range, with Cu-O distances that are approximately constant up to 5 GPa, and then decrease slightly up to 17 GPa. In contrast, the elongated Cu-O apical distances decrease continuously with pressure in the studied range. An anomalous increase of the mean square relative displacement (EXAFS Debye Waller, σ$^2$) of the elongated Cu-O path is observed from 5 GPa up to 13 GPa, when a drastic reduction takes place in σ$^2$. This is interpreted in terms of local dynamic disorder along the apical Cu-O path. At higher pressures (P>13 GPa), the local structure of Cu$^{2+}$ changes from a 4-fold square planar to a 4+2 Jahn-Teller distorted octahedral ion. We interpret these results in terms of the tendency of the Cu$^{2+}$ ion to form favorable interactions with the apical O atoms. Also, the decrease in Cu-O apical distance caused by compression softens the normal mode associated with the out-of-plane Cu movement. CuO is predicted to have an anomalous rise in permittivity with pressure as well as modest piezoelectricity in the 5-13 GPa pressure range. In addition, the near edge features in our XAS experiment show a discontinuity and a change of tendency at 5 GPa. For P < 5 GPa the evolution of the edge shoulder is ascribed to purely electronic effects which also affect the charge transfer integral. This is linked to a charge migration from the Cu to O, but also to an increase of the energy band gap, which show a change of tendency occurring also at 5 GPa.
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Submitted 31 August, 2020;
originally announced August 2020.
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Mechanism of pressure induced amorphization of SnI4: a combined X-ray diffraction -- X-ray absorption spectroscopy study
Authors:
Emiliano Fonda,
Alain Polian,
Toru Shinmei,
Tetsuo Irifune,
Jean-Paul Itié
Abstract:
We have studied the amorphization process of SnI4 up to 26.8GPa with unprecedented experimental details by combining Sn and I K edge X-ray absorption spectroscopy and powder X-ray diffraction. Standards and reverse Monte Carlo extended X-ray absorption fine structure (EXAFS) refinements confirm that the SnI4 tetrahedron is a fundamental structural unit that is preserved through the crystalline pha…
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We have studied the amorphization process of SnI4 up to 26.8GPa with unprecedented experimental details by combining Sn and I K edge X-ray absorption spectroscopy and powder X-ray diffraction. Standards and reverse Monte Carlo extended X-ray absorption fine structure (EXAFS) refinements confirm that the SnI4 tetrahedron is a fundamental structural unit that is preserved through the crystalline phase-I to crystalline phase-II transition about 7 to 10GPa and then in the amorphous phase that appears above 20GPa. Up to now unexploited Iodine EXAFS reveals to be extremely informative and confirms the formation of iodine iodine short bonds close to 2.85Å in the amorphous phase at 26.8 GPa. A coordination number increase of Sn in the crystalline phase-II appears to be excluded, while the deformation of the tetrahedral units proceeds through a flattening that keeps the average I-Sn-I angle close to 109.5°. Moreover, we put in evidence the impact of pressure on the Sn near edge structure under competing geometrical and electronic effects.
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Submitted 5 May, 2020;
originally announced May 2020.
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Interplay of the electronic and lattice degrees of freedom in A_{1-x}Fe_{2-y}Se_{2} superconductors under pressure
Authors:
M. Bendele,
C. Marini,
B. Joseph,
G. M. Pierantozzi,
A. S. Caporale,
E. Pomjakushina,
K. Conder,
A. Krzton-Maziopa,
T. Irifune,
T. Shinmei,
S. Pascarelli,
A. Bianconi,
P. Dore,
N. L. Saini,
P. Postorino
Abstract:
The local structure and electronic properties of Rb$_{1-x}$Fe$_{2-y}$Se$_2$ are investigated by means of site selective polarized x-ray absorption spectroscopy at the iron and selenium K-edges as a function of pressure. A combination of dispersive geometry and novel nanodiamond anvil pressure-cell has permitted to reveal a step-like decrease in the Fe-Se bond distance at $p\simeq11$ GPa. The posit…
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The local structure and electronic properties of Rb$_{1-x}$Fe$_{2-y}$Se$_2$ are investigated by means of site selective polarized x-ray absorption spectroscopy at the iron and selenium K-edges as a function of pressure. A combination of dispersive geometry and novel nanodiamond anvil pressure-cell has permitted to reveal a step-like decrease in the Fe-Se bond distance at $p\simeq11$ GPa. The position of the Fe K-edge pre-peak, which is directly related to the position of the chemical potential, remains nearly constant until $\sim6$ GPa, followed by an increase until $p\simeq 11$ GPa. Here, as in the local structure, a step-like decrease of the chemical potential is seen. Thus, the present results provide compelling evidence that the origin of the reemerging superconductivity in $A_{1-x}$Fe$_{2-y}$Se$_2$ in vicinity of a quantum critical transition is caused mainly by the changes in the electronic structure.
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Submitted 18 June, 2013;
originally announced June 2013.
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Polycrystalline γ-boron: As hard as polycrystalline cubic boron nitride
Authors:
Jiaqian Qin,
Norimasa Nishiyama,
Hiroaki Ohfuji,
Toru Shinmei,
Li Lei,
Duanwei He,
Tetsuo Irifune
Abstract:
The Vickers hardness of polycrystalline γ-B was measured using a diamond indentation method. The elastic properties of polycrystalline γ-B (B=213.9 GPa, G=227.2 GPa, and E=503.3 GPa) were determined using ultrasonic measurement at ambient condition. Under the loading force up to 20 N, our test gave an average Vickers hardness in the asymptotic-hardness region of 30.3 GPa. The average fracture toug…
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The Vickers hardness of polycrystalline γ-B was measured using a diamond indentation method. The elastic properties of polycrystalline γ-B (B=213.9 GPa, G=227.2 GPa, and E=503.3 GPa) were determined using ultrasonic measurement at ambient condition. Under the loading force up to 20 N, our test gave an average Vickers hardness in the asymptotic-hardness region of 30.3 GPa. The average fracture toughness was measured as 4.1MPa m1/2. Additionally, We also measured the hardness and elastic properties of polycrystalline β-B and PcBN for comparison. The hardness and elastic properties for polycrystalline γ-B was found to be very close to that of PcBN. Our results suggest that the polycrystalline γ-B could be a superhard polycrystalline material for industrial applications.
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Submitted 16 May, 2012; v1 submitted 8 March, 2012;
originally announced March 2012.
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Phase relations in boron at pressure up to 18 GPa and temperature up to 2200 °C
Authors:
Jiaqian Qin,
Tetsuo Irifune,
Haruhiko Dekura,
Hiroaki Ohfuji,
Norimasa Nishiyama,
Li Lei,
Toru Shinmei
Abstract:
The phase relations in boron have been investigated at high pressure and high temperature using a multianvil apparatus, and the quenched sample has been analyzed by x-ray diffraction, Raman spectra and transmission electron microscopy. We demonstrate that γ-B28 can be synthesized over a wide P-T range, and T-B50 is obtained at higher temperatures and similar pressures. The phase boundary of the β-…
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The phase relations in boron have been investigated at high pressure and high temperature using a multianvil apparatus, and the quenched sample has been analyzed by x-ray diffraction, Raman spectra and transmission electron microscopy. We demonstrate that γ-B28 can be synthesized over a wide P-T range, and T-B50 is obtained at higher temperatures and similar pressures. The phase boundary of the β-B106, γ-B28 and T-B50 is determined at pressures between 7 and 18 GPa and the temperatures of 500-2200 °C. The results suggest that T-B50 might be an intermediate phase-metastable, formed for kinetic reasons (Ostwald rule) on the way from β-B106 to T-192 and γ-B28 to T-192.
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Submitted 5 November, 2011; v1 submitted 6 September, 2011;
originally announced September 2011.
