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Dual-Polarization SHG Interferometry for Imaging Antiparallel Domains and Stacking Angles of 2D Heterocrystals
Authors:
Juseung Oh,
Wontaek Kim,
Gyouil Jeong,
Yeri Lee,
Jihun Kim,
Hyeongjoon Kim,
Hyeon Suk Shin,
Sunmin Ryu
Abstract:
Optical second-harmonic generation (SHG) enables orientational polarimetry for crystallographic analysis and domain imaging of various materials. However, conventional intensity polarimetry, which neglects phase information, fails to resolve antiparallel domains and to describe two-dimensional heterostructures, which represent a new class of van der Waals-bound composite crystals. In this work, we…
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Optical second-harmonic generation (SHG) enables orientational polarimetry for crystallographic analysis and domain imaging of various materials. However, conventional intensity polarimetry, which neglects phase information, fails to resolve antiparallel domains and to describe two-dimensional heterostructures, which represent a new class of van der Waals-bound composite crystals. In this work, we report dual-polarization spectral phase interferometry (DP-SPI) and establish a generalized SHG superposition model that incorporates the observables of DP-SPI. Antiparallel domains of monolayer transition metal dichalcogenides (TMDs) were successfully imaged with distinction, validating the interferometric polarimetry. From DP interferograms of TMD heterobilayers, the orientation of each layer could be determined, enabling layer-resolved probing. By employing the superposition model, we also demonstrate the photonic design and fabrication of ternary TMD heterostructures for circularly polarized SHG. These methods, providing comprehensive SHG measurements and theoretical description, can be extended to heterostructures consisting of more than two constituent layers and are not limited to TMDs or 2D materials.
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Submitted 27 May, 2025;
originally announced May 2025.
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Indium selenides for next-generation low-power computing devices
Authors:
Seunguk Song,
Michael Altvater,
Wonchan Lee,
Hyeon Suk Shin,
Nicholas Glavin,
Deep Jariwala
Abstract:
As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional (2D) transition metal dichalcogenides have been extensively investigated, van der Waals indium selenides--particularly InSe and In2Se3--offer a compelling alterna…
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As silicon-based computing approaches fundamental physical limits in energy efficiency, speed, and density, the search for complementary materials to extend or replace CMOS technology has become increasingly urgent. While two-dimensional (2D) transition metal dichalcogenides have been extensively investigated, van der Waals indium selenides--particularly InSe and In2Se3--offer a compelling alternative with distinct advantages for next-generation electronics. Unlike conventional 2D semiconductors, indium selenides combine exceptional electron mobility (exceeding 1,000 cm^2V^-1s^-1), high thermal velocity (>2x10^7 cm/s), thickness-tunable bandgaps (0.97-2.5 eV), and unique phase-dependent ferroelectric properties, enabling both high-performance logic and non-volatile memory functions within a single material system. This perspective critically evaluates the materials properties, fabrication challenges, and device applications of indium selenides, examining their potential to surpass silicon in ultra-scaled transistors through ballistic transport while simultaneously offering ferroelectric memory capabilities impossible in conventional semiconductors. We analyze recent breakthroughs in ballistic InSe transistors, tunnel field-effect transistors, and In2Se3-based ferroelectric devices for information storage, and identify key research priorities for addressing persistent challenges in scalable synthesis, phase control, and oxidation prevention. By bridging fundamental materials science with practical device engineering, we provide a roadmap for translating the exceptional properties of indium selenides into commercially viable, low-power computing technologies that can overcome the limitations of silicon while enabling novel computing architectures.
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Submitted 16 March, 2025;
originally announced March 2025.
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Double-sided van der Waals epitaxy of topological insulators across an atomically thin membrane
Authors:
Joon Young Park,
Young Jae Shin,
Jeacheol Shin,
Jehyun Kim,
Janghyun Jo,
Hyobin Yoo,
Danial Haei,
Chohee Hyun,
Jiyoung Yun,
Robert M. Huber,
Arijit Gupta,
Kenji Watanabe,
Takashi Taniguchi,
Wan Kyu Park,
Hyeon Suk Shin,
Miyoung Kim,
Dohun Kim,
Gyu-Chul Yi,
Philip Kim
Abstract:
Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materi…
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Atomically thin van der Waals (vdW) films provide a novel material platform for epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional (2D) material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here, we report the double-sided epitaxy of vdW layered materials through atomic membranes. We grow vdW topological insulators (TIs) Sb$_2$Te$_3$ and Bi$_2$Se$_3$ by molecular beam epitaxy on both surfaces of atomically thin graphene or hBN, which serve as suspended 2D vdW "$\textit{substrate}$" layers. Both homo- and hetero- double-sided vdW TI tunnel junctions are fabricated, with the atomically thin hBN acting as a crystal-momentum-conserving tunnelling barrier with abrupt and epitaxial interface. By performing field-angle dependent magneto-tunnelling spectroscopy on these devices, we reveal the energy-momentum-spin resonant tunnelling of massless Dirac electrons between helical Landau levels developed in the topological surface states at the interface.
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Submitted 30 May, 2024;
originally announced May 2024.
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Twisted MoSe2 Homobilayer Behaving as a Heterobilayer
Authors:
Arka Karmakar,
Abdullah Al-Mahboob,
Natalia Zawadzka,
Mateusz Raczyński,
Weiguang Yang,
Mehdi Arfaoui,
Gayatri,
Julia Kucharek,
Jerzy T. Sadowski,
Hyeon Suk Shin,
Adam Babiński,
Wojciech Pacuski,
Tomasz Kazimierczuk,
Maciej R Molas
Abstract:
Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a tw…
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Heterostructures (HSs) formed by the transition-metal dichalcogenides (TMDCs) materials have shown great promise in next-generation optoelectronic and photonic applications. An artificially twisted HS, allows us to manipulate the optical, and electronic properties. With this work, we introduce the understanding of the complex energy transfer (ET) process governed by the dipolar interaction in a twisted molybdenum diselenide (MoSe2) homobilayer without any charge-blocking interlayer. We fabricated an unconventional homobilayer (i.e., HS) with a large twist angle by combining the chemical vapor deposition (CVD) and mechanical exfoliation (Exf.) techniques to fully exploit the lattice parameters mismatch and indirect/direct (CVD/Exf.) bandgap nature. This effectively weaken the charge transfer (CT) process and allows the ET process to take over the carrier recombination channels. We utilize a series of optical and electron spectroscopy techniques complementing by the density functional theory calculations, to describe a massive photoluminescence enhancement from the HS area due to an efficient ET process. Our results show that the electronically decoupled MoSe2 homobilayer is coupled by the ET process, mimicking a 'true' heterobilayer nature.
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Submitted 7 June, 2024; v1 submitted 23 April, 2024;
originally announced April 2024.
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Amorphous Boron Nitride as an Ultrathin Copper Diffusion Barrier for Advanced Interconnects
Authors:
Onurcan Kaya,
Hyeongjoon Kim,
Byeongkyu Kim,
Thomas Galvani,
Luigi Colombo,
Mario Lanza,
Hyeon-Jin Shin,
Ivan Cole,
Hyeon Suk Shin,
Stephan Roche
Abstract:
This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigati…
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This study focuses on amorphous boron nitride ($\rm α$-BN) as a novel diffusion barrier for advanced semiconductor technology, particularly addressing the critical challenge of copper diffusion in back-end-of-line (BEOL) interconnects. Owing to its ultralow dielectric constant and robust barrier properties, $\rm α$-BN is examined as an alternative to conventional low-k dielectrics. The investigation primarily employs theoretical modelling, using a Gaussian Approximation Potential, to simulate and understand the atomic-level interactions. This machine learning-based approach allows the performance of realistic simulations of amorphous structure of $\rm α$-BN, enabling the exploration of the impact of different film morphologies on barrier efficacy. Furthermore, we studied the electronic and optical properties of the films using a simple Tight-Binding model. In addition to the theoretical studies, we performed diffusion studies of copper through PECVD $\rm α$-BN on Si. The results from both the theoretical and experimental investigations highlight the potential of $\rm α$-BN as a highly effective diffusion barrier, suitable for integration in nanoelectronics. This research shows that $\rm α$-BN is a promising candidate for BEOL interconnects but also demonstrates the synergy of advanced computational models and experimental methods in material innovation for semiconductor applications.
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Submitted 2 February, 2025; v1 submitted 2 February, 2024;
originally announced February 2024.
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MoS$_{2}$/Al$_{0.68}$Sc$_{0.32}$N negative capacitance field-effect transistors
Authors:
Seunguk Song,
Kwan-Ho Kim,
Srikrishna Chakravarthi,
Zirun Han,
Gwangwoo Kim,
Kyung Yeol Ma,
Hyeon Suk Shin,
Roy H. Olsson III,
Deep Jariwala
Abstract:
Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characte…
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Al$_{0.68}$Sc$_{0.32}$N (AlScN) has gained attention for its outstanding ferroelectric properties, including a high coercive field and high remnant polarization. Although AlScN-based ferroelectric field-effect transistors (FETs) for memory applications have been demonstrated, a device for logic applications with minimal hysteresis has not been reported. This study reports on the transport characteristics of a MoS$_{2}$ negative capacitance FET (NCFET) based on an AlScN ferroelectric material. We experimentally demonstrate the effect of a dielectric layer in the gate stack on the memory window and subthreshold swing (SS) of the NCFET. We show that the hysteresis behavior of transfer characteristics in the NCFET can be minimized with the inclusion of a non-ferroelectric dielectric layer, which fulfills the capacitance-matching condition. Remarkably, we also observe the NC effect in MoS$_{2}$/AlScN NCFETs arrays based on large-area monolayer MoS$_{2}$ synthesized by chemical vapor deposition, showing the SS values smaller than its thermionic limit (~36-60 mV/dec) and minimal variation in threshold voltages (< 20 mV).
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Submitted 31 July, 2023;
originally announced August 2023.
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Exciton Confinement in Two-Dimensional, In-Plane, Quantum Heterostructures
Authors:
Gwangwoo Kim,
Benjamin Huet,
Christopher E. Stevens,
Kiyoung Jo,
Jeng-Yuan Tsai,
Saiphaneendra Bachu,
Meghan Leger,
Kyung Yeol Ma,
Nicholas R. Glavin,
Hyeon Suk Shin,
Nasim Alem,
Qimin Yan,
Joshua R. Hedrickson,
Joan M. Redwing,
Deep Jariwala
Abstract:
Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engine…
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Two-dimensional (2D) semiconductors are promising candidates for optoelectronic application and quantum information processes due to their inherent out-of-plane 2D confinement. In addition, they offer the possibility of achieving low-dimensional in-plane exciton confinement, similar to zero-dimensional quantum dots, with intriguing optical and electronic properties via strain or composition engineering. However, realizing such laterally confined 2D monolayers and systematically controlling size-dependent optical properties remain significant challenges. Here, we report the observation of lateral confinement of excitons in epitaxially grown in-plane MoSe2 quantum dots (~15-60 nm wide) inside a continuous matrix of WSe2 monolayer film via a sequential epitaxial growth process. Various optical spectroscopy techniques reveal the size-dependent exciton confinement in the MoSe2 monolayer quantum dots with exciton blue shift (12-40 meV) at a low temperature as compared to continuous monolayer MoSe2. Finally, single-photon emission was also observed from the smallest dots at 1.6 K. Our study opens the door to compositionally engineered, tunable, in-plane quantum light sources in 2D semiconductors.
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Submitted 12 July, 2023;
originally announced July 2023.
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Tailoring Exciton Dynamics in TMDC Heterobilayers in the Quantum Plasmonic Regime
Authors:
Mahfujur Rahaman,
Gwangwoo Kim,
Kyung Yeol Ma,
Seunguk Song,
Hyeon Suk Shin,
Deep Jariwala
Abstract:
Control of excitons in transition metal dichalcogenides (TMDCs) and their heterostructures is fundamentally interesting for tailoring light-matter interactions and exploring their potential applications in high-efficiency optoelectronic and nonlinear photonic devices. While both intra- and interlayer excitons in TMDCs have been heavily studied, their behavior in the quantum tunneling regime, in wh…
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Control of excitons in transition metal dichalcogenides (TMDCs) and their heterostructures is fundamentally interesting for tailoring light-matter interactions and exploring their potential applications in high-efficiency optoelectronic and nonlinear photonic devices. While both intra- and interlayer excitons in TMDCs have been heavily studied, their behavior in the quantum tunneling regime, in which the TMDC or its heterostructure is optically excited and concurrently serves as a tunnel junction barrier, remains unexplored. Here, using the degree of freedom of a metallic probe in an atomic force microscope, we investigated both intralayer and interlayer excitons dynamics in TMDC heterobilayers via locally controlled junction current in a finely tuned sub-nanometer tip-sample cavity. Our tip-enhanced photoluminescence measurements reveal a significantly different exciton-quantum plasmon coupling for intralayer and interlayer excitons due to different orientation of the dipoles of the respective e-h pairs. Using a steady-state rate equation fit, we extracted field gradients, radiative and nonradiative relaxation rates for excitons in the quantum tunneling regime with and without junction current. Our results show that tip-induced radiative (nonradiative) relaxation of intralayer (interlayer) excitons becomes dominant in the quantum tunneling regime due to the Purcell effect. These findings have important implications for near-field probing of excitonic materials in the strong-coupling regime.
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Submitted 9 June, 2023;
originally announced June 2023.
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Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging
Authors:
T. Severs Millard,
A. Genco,
E. M. Alexeev,
S. Randerson,
S. Ahn,
A. Jang,
H. S. Shin,
A. I. Tartakovskii
Abstract:
CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to…
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CVD growth is capable of producing multiple single crystal islands of atomically thin TMDs over large area substrates, with potential control of their morphology, lateral size, and epitaxial alignment to substrates with hexagonal symmetry. Subsequent merging of epitaxial domains can lead to single-crystal monolayer sheets - a step towards scalable production of high quality TMDs. For CVD growth to be effectively used for such production it is necessary to be able to rapidly assess the quality of material across entire large area substrates. To date characterisation has been limited to sub 0.1 mm2 areas, where the properties measured are not necessarily representative of an entire sample. Here, we apply photoluminescence (PL) imaging and computer vision techniques to create an automated analysis for large area samples of semiconducting TMDs, measuring the properties of island size, density of islands, relative PL intensity and homogeneity, and orientation of triangular domains. The analysis is applied to 20x magnification optical microscopy images that completely map samples of WSe2 on hBN, 5.0 mm x 5.0 mm in size, and MoSe2-WS2 on SiO2/Si, 11.2 mm x 5.8 mm in size. For the latter sample 100,245 objects were identified and their properties measured, with an orientation extracted from 27,779 objects that displayed a triangular morphology. In the substrates studied, two prevailing orientations of epitaxial growth were observed in WSe2 grown on hBN and four predominant orientations were observed in MoSe2, initially grown on c-plane sapphire. The proposed analysis will greatly reduce the time needed to study freshly synthesised material over large area substrates and provide feedback to optimise growth conditions, advancing techniques to produce high quality TMD monolayer sheets for commercial applications.
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Submitted 9 November, 2019;
originally announced November 2019.
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Infrared study of Large scale h-BN film and Graphene/h-BN heterostructure
Authors:
Kwangnam Yu,
Jiho Kim,
Chul Lee,
A-Rang Jang,
Hyeon Suk Shin,
Keun Soo Kim,
Young-Jun Yu,
E. J. Choi
Abstract:
We synthesize a series of CVD h-BN films and perform critical infrared spectroscopic characterization. For high-temperature (HT, Temp = 1400 degrees) grown h-BN thin film only E1u-mode infrared phonon is activated demonstrating highly aligned 2D h-BN planes over large area, whereas low-temperature (LT, Temp = 1000 degrees) grown film shows two phonon peaks, E1u and A2u, due to stacking of h-BN pla…
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We synthesize a series of CVD h-BN films and perform critical infrared spectroscopic characterization. For high-temperature (HT, Temp = 1400 degrees) grown h-BN thin film only E1u-mode infrared phonon is activated demonstrating highly aligned 2D h-BN planes over large area, whereas low-temperature (LT, Temp = 1000 degrees) grown film shows two phonon peaks, E1u and A2u, due to stacking of h-BN plane at tilted angle. For CVD graphene transferred on HT h-BN/SiO2/Si substrate, interband transition spectrum s1 shifts strongly to lower energy compared with that on LT h-BN/SiO2/Si and on bare SiO2/Si substrate, revealing that residual carrier density n in graphene is suppressed by use of HT h-BN layer. Also the interband transition width of s1 defined by effective temperature is reduced from 400 K for G/SiO2/Si to 300 K for HT h-BN/SiO2/Si. The behaviors of n and effective temperature show that HT h-BN film can decouple CVD graphene from the impurity and defect of SiO2 leading to large scale free-standing like graphene.
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Submitted 7 November, 2019;
originally announced November 2019.
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Quantum efficiency enhancement of bialkali photocathodes by an atomically thin layer on substrates
Authors:
Hisato Yamaguchi,
Fangze Liu,
Jeffrey DeFazio,
Mengjia Gaowei,
Lei Guo,
Anna Alexander,
Seong In Yoon,
Chohee Hyun,
Matthew Critchley,
John Sinsheimer,
Vitaly Pavlenko,
Derek Strom,
Kevin L. Jensen,
Daniel Finkenstadt,
Hyeon Suk Shin,
Masahiro Yamamoto,
John Smedley,
Nathan A. Moody
Abstract:
We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relativ…
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We report quantum efficiency (QE) enhancements in accelerator technology relevant antimonide photocathodes (K2CsSb) by interfacing them with atomically thin two-dimensional (2D) crystal layers. The enhancement occurs in a reflection mode, when a 2D crystal is placed in between the photocathodes and optically reflective substrates. Specifically, the peak QE at 405 nm (3.1 eV) increases by a relative 10 percent, while the long wavelength response at 633 nm (2.0 eV) increases by a relative 36 percent on average and up to 80 percent at localized hot spot regions when photocathodes are deposited onto graphene coated stainless steel. There is a similar effect for photocathodes deposited on hexagonal boron nitride monolayer coatings using nickel substrates. The enhancement does not occur when reflective substrates are replaced with optically transparent sapphire. Optical transmission, X-ray diffraction (XRD) and X-ray fluorescence (XRF) revealed that thickness, crystal orientation, quality and elemental stoichiometry of photocathodes do not appreciably change due to 2D crystal coatings. These results suggest optical interactions are responsible for the QE enhancements when 2D crystal sublayers are present on reflective substrates, and provide a pathway toward a simple method of QE enhancement in semiconductor photocathodes by an atomically thin 2D crystal on substrates.
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Submitted 2 October, 2019;
originally announced October 2019.
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Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
Authors:
Evgeny M. Alexeev,
David A. Ruiz-Tijerina,
Mark Danovich,
Matthew J. Hamer,
Daniel J. Terry,
Pramoda K. Nayak,
Seongjoon Ahn,
Sangyeon Pak,
Juwon Lee,
Jung Inn Sohn,
Maciej R. Molas,
Maciej Koperski,
Kenji Watanabe,
Takashi Taniguchi,
Kostya S. Novoselov,
Roman V. Gorbachev,
Hyeon Suk Shin,
Vladimir I. Fal'ko,
Alexander I. Tartakovskii
Abstract:
Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constitu…
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Atomically-thin layers of two-dimensional materials can be assembled in vertical stacks held together by relatively weak van der Waals forces, allowing for coupling between monolayer crystals with incommensurate lattices and arbitrary mutual rotation. A profound consequence of using these degrees of freedom is the emergence of an overarching periodicity in the local atomic registry of the constituent crystal structures, known as a moiré superlattice. Its presence in graphene/hexagonal boron nitride (hBN) structures led to the observation of electronic minibands, whereas its effect enhanced by interlayer resonant conditions in twisted graphene bilayers culminated in the observation of the superconductor-insulator transition at magic twist angles. Here, we demonstrate that, in semiconducting heterostructures built of incommensurate MoSe2 and WS2 monolayers, excitonic bands can hybridise, resulting in the resonant enhancement of the moiré superlattice effects. MoSe2 and WS2 are specifically chosen for the near degeneracy of their conduction band edges to promote the hybridisation of intra- and interlayer excitons, which manifests itself through a pronounced exciton energy shift as a periodic function of the interlayer rotation angle. This occurs as hybridised excitons (hX) are formed by holes residing in MoSe2 bound to a twist-dependent superposition of electron states in the adjacent monolayers. For heterostructures with almost aligned pairs of monolayer crystals, resonant mixing of the electron states leads to pronounced effects of the heterostructure's geometrical moiré pattern on the hX dispersion and optical spectrum. Our findings underpin novel strategies for band-structure engineering in semiconductor devices based on van der Waals heterostructures.
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Submitted 12 April, 2019;
originally announced April 2019.
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Planar and van der Waals heterostructures for vertical tunnelling single electron transistors
Authors:
Gwangwoo Kim,
Sung-Soo Kim,
Jonghyuk Jeon,
Seong In Yoon,
Seokmo Hong,
Young Jin Cho,
Abhishek Misra,
Servet Ozdemir,
Jun Yin,
Davit Ghazaryan,
Mathew Holwill,
Artem Mishchenko,
Daria V. Andreeva,
Yong-Jin Kim,
Hu Young Jeong,
A-Rang Jang,
Hyun-Jong Chung,
Andre K. Geim,
Kostya S. Novoselov,
Byeong-Hyeok Sohn,
Hyeon Suk Shin
Abstract:
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical…
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Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.
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Submitted 16 January, 2019;
originally announced January 2019.
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Imaging of interlayer coupling in van der Waals heterostructures using a bright-field optical microscope
Authors:
Evgeny M. Alexeev,
Alessandro Catanzaro,
Oleksandr V. Skrypka,
Pramoda K. Nayak,
Seongjoon Ahn,
Sangyeon Pak,
Juwon Lee,
Jung Inn Sohn,
Kostya S. Novoselov,
Hyeon Suk Shin,
Alexander I. Tartakovskii
Abstract:
Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influenc…
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Vertically stacked atomic layers from different layered crystals can be held together by van der Waals forces, which can be used for building novel heterostructures, offering a platform for developing a new generation of atomically thin, transparent and flexible devices. The performance of these devices is critically dependent on the layer thickness and the interlayer electronic coupling, influencing the hybridisation of the electronic states as well as charge and energy transfer between the layers. The electronic coupling is affected by the relative orientation of the layers as well as by the cleanliness of their interfaces. Here, we demonstrate an efficient method for monitoring interlayer coupling in heterostructures made from transition metal dichalcogenides using photoluminescence imaging in a bright-field optical microscope. The colour and brightness in such images are used here to identify mono- and few-layer crystals, and to track changes in the interlayer coupling and the emergence of interlayer excitons after thermal annealing in mechanically exfoliated flakes as well as a function of the twist angle in atomic layers grown by chemical vapour deposition. Material and crystal thickness sensitivity of the presented imaging technique makes it a powerful tool for characterisation of van der Waals heterostructures assembled by a wide variety of methods, using combinations of materials obtained through mechanical or chemical exfoliation and crystal growth.
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Submitted 1 May, 2017; v1 submitted 23 December, 2016;
originally announced December 2016.
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Quantum electrical transport properties of topological insulator Bi2Te3 nanowires
Authors:
Hong-Seok Kim,
Ho Sun Shin,
Joon Sung Lee,
Chi Won Ahn,
Jae Yong Song,
Yong-Joo Doh
Abstract:
We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibi…
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We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibits exponential temperature dependence, suggesting that the phase coherence length L_phi is inversely proportional to the temperature, as in quasi-ballistic systems. In addition, a weak antilocalization analysis on the surface channel by using a one-dimensional localization theory, enabled by successful extraction of the surface contribution from the magnetoconductance data, is provided in support of the temperature dependence of L_phi.
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Submitted 31 October, 2015;
originally announced November 2015.
