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Ultrafast switching of topological invariants by light-driven strain
Authors:
Tae Gwan Park,
Seungil Baek,
Junho Park,
Eui-Cheol Shin,
Hong Ryeol Na,
Eon-Taek Oh,
Seung-Hyun Chun,
Yong-Hyun Kim,
Sunghun Lee,
Fabian Rotermund
Abstract:
Reversible control of the topological invariants from nontrivial to trivial states has fundamental implications for quantum information processors and spintronics, by realizing of an on/off switch for robust and dissipationless spin-current. Although mechanical strain has typically advantageous for such control of topological invariants, it is often accompanied by in-plane fractures and is not sui…
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Reversible control of the topological invariants from nontrivial to trivial states has fundamental implications for quantum information processors and spintronics, by realizing of an on/off switch for robust and dissipationless spin-current. Although mechanical strain has typically advantageous for such control of topological invariants, it is often accompanied by in-plane fractures and is not suited for high-speed, time-dependent operations. Here, we use ultrafast optical and THz spectroscopy to investigate topological phase transitions by light-driven strain in Bi$_2$Se$_3$, a material that requires substantial strain for $\mathrm{Z}_2$ switching. We show that Bi$_2$Se$_3$ experiences ultrafast switching from being a topological insulator with spin-momentum-locked surfaces, to hybridized states and normal insulating phases at ambient conditions. Light-induced strong out-of-plane strain can suppress the surface-bulk coupling, enabling differentiation of surface and bulk conductance at room temperature, far above the Debye temperature. We illustrate various time-dependent sequences of transient hybridization, as well as the switching operation of topological invariants by adjusting the photoexcitation intensity. The abrupt alterations in both surface and bulk transport near the transition point allow for coherent conductance modulation at hyper-sound frequencies. Our findings regarding light-triggered ultrafast switching of topological invariants pave the way for high-speed topological switching and its associated applications.
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Submitted 16 June, 2023;
originally announced June 2023.
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Derivation of a governing rule in triboelectric charging and series from thermoelectricity
Authors:
Eui-Cheol Shin,
Jae-Hyeon Ko,
Ho-Ki Lyeo,
Yong-Hyun Kim
Abstract:
Friction-driven static electrification is familiar and fundamental in daily life, industry, and technology, but its basics have long been unknown and have continually perplexed scientists from ancient Greece to the modern high-tech era. Despite its simple manifestation, triboelectric charging is believed to be very complex because of the unresolvable interfacial interaction between two rubbing mat…
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Friction-driven static electrification is familiar and fundamental in daily life, industry, and technology, but its basics have long been unknown and have continually perplexed scientists from ancient Greece to the modern high-tech era. Despite its simple manifestation, triboelectric charging is believed to be very complex because of the unresolvable interfacial interaction between two rubbing materials. Here, we for the first time reveal a simple physics of triboelectric charging and triboelectric series based on friction-originated thermoelectric charging effects at the interface, characterized by the material density ($ρ$), specific heat (c), thermal conductivity (k), and Seebeck coefficient (S) of each material. We demonstrate that energy dissipational heat at the interface induces temperature variations in the materials and thus develops electrostatic potentials that will initiate thermoelectric charging across the interface. We find that the trends and quantities of triboelectric charging for various polymers, metals, semiconductors, and even lightning clouds are simply governed by the triboelectric factor $ξ=S/\sqrt{ρck}$. The triboelectric figure-of-merit is expressed with the triboelectric power K=$ξ\sqrt{t/π}$, of which the difference can be maximized up to 1.2 V/W cm$^{-2}$ at the friction time t = 1 s. Our findings will bring significant opportunities for microscopic understanding and management of triboelectricity or static electrification.
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Submitted 28 April, 2022; v1 submitted 29 January, 2021;
originally announced January 2021.
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Purcell enhanced and indistinguishable single-photon generation from quantum dots coupled to on-chip integrated ring resonators
Authors:
Łukasz Dusanowski,
Dominik Köck,
Eunso Shin,
Soon-Hong Kwon,
Christian Schneider,
Sven Höfling
Abstract:
Integrated photonic circuits provide a versatile toolbox of functionalities for advanced quantum optics applications. Here, we demonstrate an essential component of such a system in the form of a Purcell enhanced single-photon source based on a quantum dot coupled to a robust on-chip integrated resonator. For that, we develop GaAs monolithic ring cavities based on distributed Bragg reflector ridge…
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Integrated photonic circuits provide a versatile toolbox of functionalities for advanced quantum optics applications. Here, we demonstrate an essential component of such a system in the form of a Purcell enhanced single-photon source based on a quantum dot coupled to a robust on-chip integrated resonator. For that, we develop GaAs monolithic ring cavities based on distributed Bragg reflector ridge waveguides. Under resonant excitation conditions, we observe an over twofold spontaneous emission rate enhancement using Purcell effect and gain a full coherent optical control of a QD-two-level system via Rabi oscillations. Furthermore, we demonstrate an on-demand single-photon generation with strongly suppressed multi-photon emission probability as low as 1% and two-photon interference with visibility up to 95%. This integrated single-photon source can be readily scaled up, promising a realistic pathway for scalable on-chip linear optical quantum simulation, quantum computation and quantum networks.
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Submitted 30 July, 2020; v1 submitted 25 July, 2020;
originally announced July 2020.
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Restoration of Topological Surface State by Vacuum Annealing in Magnetically Doped Topological Insulator
Authors:
Jinsu Kim,
Eun-Ha Shin,
Manoj K. Sharma,
Kyuwook Ihm,
Otgonbayar Dugerjav,
Chanyong Hwang,
Hwangho Lee,
Kyung-Tae Ko,
Jae-Hoon Park,
Miyoung Kim,
Hanchul Kim,
Myung-Hwa Jung
Abstract:
The introduction of magnetic order on the surface of topological insulators in general breaks the two-dimensional character of topological surface state (TSS). Once the TSS disappears, it is improbable to restore the topological surface properties. In this report, we demonstrate that it is possible to restore the inherent TSS by ultra-high vacuum annealing. Starting from an antiferromagnetic Gd-do…
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The introduction of magnetic order on the surface of topological insulators in general breaks the two-dimensional character of topological surface state (TSS). Once the TSS disappears, it is improbable to restore the topological surface properties. In this report, we demonstrate that it is possible to restore the inherent TSS by ultra-high vacuum annealing. Starting from an antiferromagnetic Gd-doped Bi2Te3, that has surface state gap without TSS properties, after annealing we observed the gap closing as well as typical TSS features in physical properties. The microscopic mechanism of atomic migration and TSS restoration by annealing process is unraveled by the combination of scanning tunneling microscopy measurements and density functional theory calculations. This approach to control the surface of topological insulators and stabilize the TSS simply by vacuum annealing provides a new platform towards the exploitation of their topological properties.
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Submitted 14 September, 2017;
originally announced September 2017.
