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Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
Authors:
J. Chen,
X. Y. He,
K. H. Wu,
Z. Q. Ji,
L. Lu,
J. R. Shi,
J. H. Smet,
Y. Q. Li
Abstract:
We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the…
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We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the electron density is lowered, the magnetotransport behavior deviates from the single component description and strong evidence is found for independent conducting channels at the bottom and top surfaces. The magnetic-field-dependent part of corrections to conductivity due to the Zeeman energy is shown to be negligible despite non-negligible electron-electron interactions.
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Submitted 27 April, 2011; v1 submitted 5 April, 2011;
originally announced April 2011.
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Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
Authors:
J. Chen,
H. J. Qin,
F. Yang,
J. Liu,
T. Guan,
F. M. Qu,
G. H. Zhang,
J. R. Shi,
X. C. Xie,
C. L. Yang,
K. H. Wu,
Y. Q. Li,
L. Lu
Abstract:
We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual chang…
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We report that Bi$_2$Se$_3$ thin films can be epitaxially grown on SrTiO$_{3}$ substrates, which allow for very large tunablity in carrier density with a back-gate. The observed low field magnetoconductivity due to weak anti-localization (WAL) has a very weak gate-voltage dependence unless the electron density is reduced to very low values. Such a transition in WAL is correlated with unusual changes in longitudinal and Hall resistivities. Our results suggest much suppressed bulk conductivity at large negative gate-voltages and a possible role of surface states in the WAL phenomena. This work may pave a way for realizing three-dimensional topological insulators at ambient conditions.
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Submitted 11 March, 2010; v1 submitted 7 March, 2010;
originally announced March 2010.
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Doping dependence of the coupling of electrons to bosonic modes in the single-layer high-temperature Bi2Sr2CuO6 superconductor
Authors:
W. Meevasana,
N. J. C. Ingle,
D. H. Lu,
J. R. Shi,
F. Baumberger,
K. M. Shen,
W. S. Lee,
T. Cuk,
H. Eisaki,
T. P. Devereaux,
N. Nagaosa,
J. Zaanen,
Z. -X. Shen
Abstract:
A recent highlight in the study of high-Tc superconductors is the observation of band renormalization / self-energy effects on the quasiparticles. This is seen in the form of kinks in the quasiparticle dispersions as measured by photoemission and interpreted as signatures of collective bosonic modes coupling to the electrons. Here we compare for the first time the self-energies in an optimally d…
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A recent highlight in the study of high-Tc superconductors is the observation of band renormalization / self-energy effects on the quasiparticles. This is seen in the form of kinks in the quasiparticle dispersions as measured by photoemission and interpreted as signatures of collective bosonic modes coupling to the electrons. Here we compare for the first time the self-energies in an optimally doped and strongly overdoped, non-superconducting single-layer Bi-cuprate (Bi2Sr2CuO6). Besides the appearance of a strong overall weakening, we also find that weight of the self-energy in the overdoped system shifts to higher energies. We present evidence that this is related to a change in the coupling to c-axis phonons due to the rapid change of the c-axis screening in this doping range.
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Submitted 21 February, 2006;
originally announced February 2006.