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Classification of second harmonic generation effect in magnetically ordered materials
Authors:
Rui-Chun Xiao,
Ding-Fu Shao,
Wei Gan,
Huan-Wen Wang,
Hui Han,
Z. G. Sheng,
Changjin Zhang,
Hua Jiang,
Hui Li
Abstract:
The relationship between magnetic order and the second harmonic generation (SHG) effect is a fundamental area of study in condensed matter physics with significant practical implications. In order to gain a clearer understanding of this intricate relation, this study presents a comprehensive classification scheme for the SHG effect in magnetically ordered materials. This framework offers a straigh…
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The relationship between magnetic order and the second harmonic generation (SHG) effect is a fundamental area of study in condensed matter physics with significant practical implications. In order to gain a clearer understanding of this intricate relation, this study presents a comprehensive classification scheme for the SHG effect in magnetically ordered materials. This framework offers a straightforward approach to connect magnetic order and SHG effect. The characteristics of the SHG tensors in all magnetic point groups are studied using the isomorphic group method, followed by a comprehensive SHG effect classification scheme that includes seven types based on the symmetries of the magnetic phases and their corresponding parent phases. In addition, a tensor dictionary containing the SHG and linear magneto-optic (LMO) effect is established. Furthermore, an extensive SHG database of magnetically ordered materials is also built up. This classification strategy exposes an anomalous SHG effect with even characteristic under time-reversal symmetry, which is solely contributed by magnetic structure. Moreover, the proposed classification scheme facilitates the determination of magnetic structures through SHG effect.
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Submitted 15 August, 2023; v1 submitted 8 November, 2022;
originally announced November 2022.
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Critical behavior of two-dimensional intrinsically ferromagnetic semiconductor CrI3
Authors:
G. T. Lin,
X. Luo,
F. C. Chen,
J. Yan,
J. J. Gao,
Y. Sun,
W. Tong,
P. Tong,
W. J. Lu,
Z. G. Sheng,
W. H. Song,
X. B. Zhu,
Y. P. Sun
Abstract:
CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical b…
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CrI3, which belongs to a rare category of two-dimensional (2D) ferromagnetic semiconductors, is of great interest for spintronic device applications. Unlike CrCl3 whose magnetism presents a 2D-Heisenberg behavior, CrI3 exhibits a larger van der Waals gap, smaller cleavage energy, and stronger magnetic anisotropy which could lead to a 3D magnetic characteristic. Hence, we investigate the critical behavior of CrI3 in the vicinity of magnetic transition. We use the modified Arrott plot and Kouvel-Fisher method, and conduct critical isotherm analysis to estimate the critical exponents near the ferromagnetic phase transition. This shows that the magnetism of CrI3 follows the crossover behavior of a 3D-Ising model with mean field type interactions where the critical exponents \b{eta}, γ, and δ are 0.323, 0.835, and 3.585, respectively, at the Curie temperature of 64 K. We propose the crossover behavior can be attributed to the strong uniaxial anisotropy and inevitable interlayer coupling. Our experiment demonstrates the applicability of crossover behavior to a 2D ferromagnetic semiconductor.
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Submitted 30 January, 2018;
originally announced January 2018.
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Tricritical behavior of two-dimensional intrinsic ferromagnetic semiconducting CrGeTe3
Authors:
G. T. Lin,
H. L. Zhuang,
X. Luo,
B. J. Liu,
F. C. Chen,
J. Yan,
Y. Sun,
J. Zhou,
W. J. Lu,
P. Tong,
Z. G. Sheng,
Z. Qu,
W. H. Song,
X. B. Zhu,
Y. P. Sun
Abstract:
CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate t…
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CrGeTe3 recently emerges as a new two-dimensional (2D) ferromagnetic semiconductor that is promising for spintronic device applications. Unlike CrSiTe3 whose magnetism can be understood using the 2D-Ising model, CrGeTe3 exhibits a smaller van der Waals gap and larger cleavage energy, which could lead to a transition of magnetic mechanism from 2D to 3D. To confirm this speculation, we investigate the critical behavior CrGeTe3 around the second-order paramagnetic-ferromagnetic phase transition. We obtain the critical exponents estimated by several common experimental techniques including the modified Arrott plot, Kouvel-Fisher method and critical isotherm analysis, which show that the magnetism of CrGeTe3 follows the tricritical mean-field model with the critical exponents \b{eta}, γ, and δ of 0.240, 1.000, and 5.070, respectively, at the Curie temperature of 67.9 K. We therefore suggest that the magnetic phase transition from 2D to 3D for CrGeTe3 should locate near a tricritical point. Our experiment provides a direct demonstration of the applicability of the tricritical mean-field model to a 2D ferromagnetic semiconductor.
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Submitted 10 June, 2017;
originally announced June 2017.
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Structural, magnetic and transport properties in the Pr-doped manganites La0.9-xPrxTe0.1MnO3
Authors:
J. Yang,
W. H. Song,
Y. Q. Ma,
R. L. Zhang,
B. C. Zhao,
Z. G. Sheng,
G. H. Zheng,
J. M. Dai,
Y. P. Sun
Abstract:
The effect of Pr-doping on structural, magnetic and transport properties in electron-doped manganites La0.9-xPrxTe0.1MnO3 with fixed carrier concentration are investigated. The room temperature structural transition from rhombohedral (R3C) to orthorhombic (Pbnm) symmetry is found in the samples with by the Rietveld refinement of x-ray powder diffraction patterns. The Curie temperature of samples…
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The effect of Pr-doping on structural, magnetic and transport properties in electron-doped manganites La0.9-xPrxTe0.1MnO3 with fixed carrier concentration are investigated. The room temperature structural transition from rhombohedral (R3C) to orthorhombic (Pbnm) symmetry is found in the samples with by the Rietveld refinement of x-ray powder diffraction patterns. The Curie temperature of samples decreases and the transition becomes broader with increasing Pr-doping level. For the samples with, there exist insulator-metal (I-M) transition. And the low-temperature I-M transition is observed at about 66K for the sample with x = 0.36, which may be related to the opening of a new percolation channel. For the samples with, r(T) curves display the semiconducting behavior (dρ/dT < 0) in both high-temperature PM phase and low-temperature FM phase. The results are discussed in terms of the increased bending of the Mn-O-Mn bond with decreasing the average ionic radius of the A-site element <r_A> and the tolerance factor, resulting in the narrowing of the bandwidth, the decrease of the mobility of electrons and the weakening of DE interaction caused by the substitution of smaller Pr3+ ions for larger La3+ ion.
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Submitted 13 August, 2004;
originally announced August 2004.
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Insulator-metal transition and the magnetic phase diagram of La1-xTexMnO3
Authors:
J. Yang,
W. H. Song,
Y. Q. Ma,
R. L. Zhang,
B. C. Zhao,
Z. G. Sheng,
G. H. Zheng,
J. M. Dai,
Y. P. Sun
Abstract:
The structural, electrical transport and magnetic properties of perovskite oxides La1-xTexMnO3 have been investigated and thus the magnetic phase diagram of La1-xTexMnO3 compounds as a function of temperature and the doping level x has been obtained. All samples have rhombohedral structure and undergo paramagnetic-ferromagnetic (PM-FM) transition accompanied with metal-insulator transition (MIT)…
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The structural, electrical transport and magnetic properties of perovskite oxides La1-xTexMnO3 have been investigated and thus the magnetic phase diagram of La1-xTexMnO3 compounds as a function of temperature and the doping level x has been obtained. All samples have rhombohedral structure and undergo paramagnetic-ferromagnetic (PM-FM) transition accompanied with metal-insulator transition (MIT). Whereas a charge ordering (CO) transition begins to appear at for the sample with x=0.60. Moreover, the variation of the Curie temperature and the MIT temperature is quite complex and the results are discussed in terms of three factors including the average A-site cation radius <rA>, the size mismatch and the Te content. In addition, there has an evident magnetoresistance (MR) at low temperatures for all samples.
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Submitted 13 August, 2004;
originally announced August 2004.
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The effect of grain size on electrical transport and magnetic properties of La0.9Te0.1MnO3
Authors:
J. Yang,
B. C. Zhao,
R. L. Zhang,
Y. Q. Ma,
Z. G. Sheng,
W. H. Song,
Y. P. Sun
Abstract:
The effect of grain size on structural, magnetic and transport properties in electron-doped manganites La0.9Te0.1MnO3 has been investigated. All samples show a rhombohedral structure with the space group at room temperature. It shows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increases with the increase of grain size. All samples undergo paramagnetic (PM)-ferromagnetic (FM) p…
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The effect of grain size on structural, magnetic and transport properties in electron-doped manganites La0.9Te0.1MnO3 has been investigated. All samples show a rhombohedral structure with the space group at room temperature. It shows that the Mn-O-Mn bond angle decreases and the Mn-O bond length increases with the increase of grain size. All samples undergo paramagnetic (PM)-ferromagnetic (FM) phase transition and an interesting phenomenon that both magnetization and the Curie temperature decrease with increasing grain size is observed, which is suggested to mainly originate from the increase of the Mn-O bond length . Additionally, obviously increases with decreasing grain size due to the increase of both the height and width of tunneling barriers with decreasing the grain size. The results indicate that both the intrinsic colossal magnetoresistance (CMR) and the extrinsic the extrinsic interfacial magnetoresistance (IMR) can be effectively tuned in La0.9Te0.1MnO3 by changing grain size.
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Submitted 26 August, 2004; v1 submitted 13 August, 2004;
originally announced August 2004.
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Structural, magnetic and transport properties in the Cu-doped manganites La0.85Te0.15Mn1-xCuxO3 (0 \leq x \leq 0.20)
Authors:
J. Yang,
W. H. Song,
Y. Q. Ma,
R. L. Zhang,
B. C. Zhao,
Z. G. Sheng,
G. H. Zheng,
J. M. Dai,
Y. P. Sun
Abstract:
The effect of Cu-doping at Mn-site on structural, magnetic and transport properties in electron-doped manganites La0.85Te0.15Mn1-xCuxO3 has been investigated. Based on the analysis of structural parameter variations, the valence state of the Cu ion in Cu-doped manganites is suggested to be +2. All samples undergo the paramagnetic-ferromagnetic (PM-FM) phase transition. The Curie temperature decr…
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The effect of Cu-doping at Mn-site on structural, magnetic and transport properties in electron-doped manganites La0.85Te0.15Mn1-xCuxO3 has been investigated. Based on the analysis of structural parameter variations, the valence state of the Cu ion in Cu-doped manganites is suggested to be +2. All samples undergo the paramagnetic-ferromagnetic (PM-FM) phase transition. The Curie temperature decreases and the transition becomes broader with increasing Cu-doping level, in contrast, the magnetization magnitude of Cu-doping samples at low temperatures increase as x \leq 0.15. The insulator-metal (I-M) transition moves to lower temperatures with increasing Cu-doping content and disappears as x > 0.1. In addition, the higher temperature resistivity r peak in double-peak-like r(T) curves observed in no Cu-doping sample is completely suppressed as Cu-doping level x = 0.1 and r(T) curve only shows single I-M transition at the low temperature well below . The results are discussed according to the change of magnetic exchange interaction caused by Cu-doping.
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Submitted 20 September, 2004; v1 submitted 12 August, 2004;
originally announced August 2004.
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The effect of oxygen stoichiometry on electrical transport and magnetic properties of La0.9Te0.1MnOy
Authors:
J. Yang,
W. H. Song,
R. L. Zhang,
Y. Q. Ma,
B. C. Zhao,
Z. G. Sheng,
G. H. Zheng,
J. M. Dai,
Y. P. Sun
Abstract:
The effect of the variation of oxygen content on structural, magnetic and transport properties in the electron-doped manganites La0.9Te0.1MnOy has been investigated. All samples show a rhombohedral structure with the space group . The Curie temperature decreases and the paramagnetic-ferromagnetic (PM-FM) transition becomes broader with the reduction of oxygen content. The resistivity of the anne…
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The effect of the variation of oxygen content on structural, magnetic and transport properties in the electron-doped manganites La0.9Te0.1MnOy has been investigated. All samples show a rhombohedral structure with the space group . The Curie temperature decreases and the paramagnetic-ferromagnetic (PM-FM) transition becomes broader with the reduction of oxygen content. The resistivity of the annealed samples increases slightly with a small reduction of oxygen content. Further reduction in the oxygen content, the resistivity maximum increases by six orders of magnitude compared with that of the as-prepared sample, and the r(T) curves of samples with y = 2.86 and y = 2.83 display the semiconducting behavior () in both high-temperature PM phase and low-temperature FM phase, which is considered to be related to the appearance of superexchange ferromagnetism (SFM) and the localization of carriers. The results are discussed in terms of the combined effects of the increase in the Mn2+/(Mn2++Mn3+) ratio, the partial destruction of double exchange (DE) interaction, and the localization of carriers due to the introduction of oxygen vacancies in the Mn-O-Mn network.
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Submitted 12 August, 2004;
originally announced August 2004.
