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Vortex nucleations in spinor Bose condensates under localized synthetic magnetic fields
Authors:
L. -R. Liu,
S. -C. Wu,
T. -W. Liu,
H. -Y. Hsu,
T. -K. Shen,
S. -K. Yip,
Y. Kawaguchi,
Y. -J. Lin
Abstract:
Gauge fields are ubiquitous in modern quantum physics. In superfluids, quantized vortices can be induced by gauge fields. Here we demonstrate the first experimental observation of vortex nucleations in spinor Bose-Einstein Condensates under radially-localized synthetic magnetic fields. The associated gauge potentials $\vec{A}$ are azimuthal and created by light-induced spin-orbital-angular-momentu…
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Gauge fields are ubiquitous in modern quantum physics. In superfluids, quantized vortices can be induced by gauge fields. Here we demonstrate the first experimental observation of vortex nucleations in spinor Bose-Einstein Condensates under radially-localized synthetic magnetic fields. The associated gauge potentials $\vec{A}$ are azimuthal and created by light-induced spin-orbital-angular-momentum coupling, generating circulating azimuthal velocity fields $\propto \vec{p}-\vec{A}$ even when the canonical momentum $\vec{p}= 0$. A sufficiently large azimuthal velocity peaked near the condensate center results in a dynamically unstable localized excitation that initiates vortex nucleations. This excitation appears as a spontaneously-formed vortex-antivortex pair near the cloud center. Following the initially developed instability, the dynamics is governed by the asymmetry and dissipation, where the atomic orbital angular momentum evolves and can reach the value of the ground state. Our system exhibits dynamical and Landau instabilities and agrees reasonably with time-dependent Gross-Pitaevskii simulations.
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Submitted 26 March, 2024;
originally announced March 2024.
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Low temperature silicon epitaxy on hydrogen terminated Si(100) surfaces
Authors:
Jeong-Young Ji,
T. -C. Shen
Abstract:
Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10 ML. The dihydride units on the 3x1 surfaces further suppress the Si adatom…
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Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10 ML. The dihydride units on the 3x1 surfaces further suppress the Si adatom diffusion and increase surface roughness.
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Submitted 21 October, 2003;
originally announced October 2003.
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The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)
Authors:
J. C. Kim,
J. -Y. Ji,
J. S. Kline,
J. R. Tucker,
T. -C. Shen
Abstract:
The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001) surfaces during ion sputtering and solid phase epitaxy. One type of antiphase boundary, the AP2 antiphase boundary, contributes to the surface…
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The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001) surfaces during ion sputtering and solid phase epitaxy. One type of antiphase boundary, the AP2 antiphase boundary, contributes to the surface roughening. AP2 antiphase boundaries are stable up to 973K, and ion sputtering and solid phase epitaxy performed at 973K result in atomically flat Si(001) surfaces.
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Submitted 15 June, 2003;
originally announced June 2003.
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Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing
Authors:
J. C. Kim,
J. -Y. Ji,
J. S. Kline,
J. R. Tucker,
T. -C. Shen
Abstract:
Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(100) surface. However, subsequent 300eV Ar ion sputtering a…
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Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(100) surface. However, subsequent 300eV Ar ion sputtering at room temperature followed by a 973K anneal yields atomically clean and flat Si(100) surfaces suitable for nanoscale device fabrication.
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Submitted 15 June, 2003;
originally announced June 2003.
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Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon
Authors:
M. A. Zudov,
C. L. Yang,
R. R. Du,
T. -C. Shen,
J. -Y. Ji,
J. S. Kline,
J. R. Tucker
Abstract:
An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first…
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An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first systematic characterization of such novel system by means of standard magnetotransport. The main findings include logarithmic temperature dependence of zero-field conductivity and logarithmic negative magnetoresistance. We analyzed the results in terms of scaling theory of localization in two dimensions.
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Submitted 20 May, 2003;
originally announced May 2003.
