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Showing 1–5 of 5 results for author: Shen, T -

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  1. arXiv:2403.17403  [pdf, other

    cond-mat.quant-gas

    Vortex nucleations in spinor Bose condensates under localized synthetic magnetic fields

    Authors: L. -R. Liu, S. -C. Wu, T. -W. Liu, H. -Y. Hsu, T. -K. Shen, S. -K. Yip, Y. Kawaguchi, Y. -J. Lin

    Abstract: Gauge fields are ubiquitous in modern quantum physics. In superfluids, quantized vortices can be induced by gauge fields. Here we demonstrate the first experimental observation of vortex nucleations in spinor Bose-Einstein Condensates under radially-localized synthetic magnetic fields. The associated gauge potentials $\vec{A}$ are azimuthal and created by light-induced spin-orbital-angular-momentu… ▽ More

    Submitted 26 March, 2024; originally announced March 2024.

  2. Low temperature silicon epitaxy on hydrogen terminated Si(100) surfaces

    Authors: Jeong-Young Ji, T. -C. Shen

    Abstract: Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10 ML. The dihydride units on the 3x1 surfaces further suppress the Si adatom… ▽ More

    Submitted 21 October, 2003; originally announced October 2003.

    Comments: 26 pages, 9 figures

  3. The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)

    Authors: J. C. Kim, J. -Y. Ji, J. S. Kline, J. R. Tucker, T. -C. Shen

    Abstract: The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scanning tunneling microscopy. Two types of antiphase boundaries form on Si(001) surfaces during ion sputtering and solid phase epitaxy. One type of antiphase boundary, the AP2 antiphase boundary, contributes to the surface… ▽ More

    Submitted 15 June, 2003; originally announced June 2003.

    Comments: 16 pages, 4 figures, to be published in Surface Science

  4. Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

    Authors: J. C. Kim, J. -Y. Ji, J. S. Kline, J. R. Tucker, T. -C. Shen

    Abstract: Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(100) surface. However, subsequent 300eV Ar ion sputtering a… ▽ More

    Submitted 15 June, 2003; originally announced June 2003.

    Comments: 13 pages, 3 figures, to be published in Applied Surface Science

  5. arXiv:cond-mat/0305482  [pdf, ps, other

    cond-mat

    Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon

    Authors: M. A. Zudov, C. L. Yang, R. R. Du, T. -C. Shen, J. -Y. Ji, J. S. Kline, J. R. Tucker

    Abstract: An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first… ▽ More

    Submitted 20 May, 2003; originally announced May 2003.