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Showing 1–27 of 27 results for author: Shelushinina, N

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  1. arXiv:2502.17127  [pdf

    cond-mat.supr-con

    Josephson vortex system in a flux-flow regime in electron doped high-Tc superconductor Nd(2-x)CexCuO4

    Authors: T. B. Charikova, A. M. Bartashevich, V. N. Neverov, M. R. Popov, N. G. Shelushinina, A. A. Ivanov

    Abstract: For an epitaxial film of an electron-doped superconductor Nd(2-x)CexCuO4 (x=0.145), in a mixed state, a well-defined step structure is observed on the dependence of the c-axis flux-flow resistance on the magnetic field parralel to CuO2 layers. It is shown that in the region of a free flow of Josephson vortices, the structure is periodic with a period of deltaB~Phi0/(lambdaablambdac). It is essenti… ▽ More

    Submitted 24 February, 2025; originally announced February 2025.

    Comments: 26 pages, 11 figures, 1 table

  2. arXiv:2410.00512  [pdf

    cond-mat.supr-con

    Pairing type symmetry in cuprate superconductors

    Authors: T. B. Charikova, N. G. Shelushinina, M. R. Popov

    Abstract: We report a brief overview ofa number of results on a type of pairing state symmetry in cuprates HTSC from a current literature. The results of recent high-precision measurements of near-nodal d-type gap functions by a modern laser-based ARPES method or by a c-axis twisted Josephson junction for hole-doped Bi-2212 system are presented. Recent experimental evidence in favor of d-type pairing symmet… ▽ More

    Submitted 1 October, 2024; originally announced October 2024.

    Comments: 11 pages, 12 figures

  3. arXiv:2410.00488  [pdf

    cond-mat.supr-con

    Intrinsic Josephson junction characteristics of Nd2-xCexCuO4/SrTiO3 epitaxial films

    Authors: T. B. Charikova, D. I. Devyaterikov, V. N. Neverov, M. R. Popov, N. G. Shelushinina, A. A. Ivanov

    Abstract: The current-voltage (I-V) properties along the c axis on Nd2-xCexCuO4 /SrTiO3 epitaxial films with x = 0.145, 0.15 were investigated. For all the samples it has been established that the I-V characteristics exhibit several resistive branches, which correspond to the resistive states of individual Josephson junctions. The results confirm the idea of a tunneling mechanism between the CuO2 layers (su… ▽ More

    Submitted 1 October, 2024; originally announced October 2024.

    Comments: 20 pages, 6 figures, 2 tables

  4. Vortex motion in tilted magnetic fields in highly layered electron-doped superconductor Nd2-xCexCuO4

    Authors: O. E. Petukhova, A. S. Klepikova, M. R Popov, N. G. Shelushinina, A. A. Ivanov, T. B. Charikova

    Abstract: The carrier transport and the motion of a vortex system in a mixed state of an electron-doped high-temperature superconductors Nd2-xCexCuO4 were investigated. To study the anisotropy of galvanomagnetic effects of highly layered NdCeCuO system we have synthesized Nd2-xCexCuO4/SrTiO3 epitaxial films with non-standart orientations of the c-axis and conductive CuO2 layers relative to the substrate. Th… ▽ More

    Submitted 11 May, 2021; originally announced May 2021.

    Comments: 20 pages, 5 figures

  5. arXiv:2006.03488  [pdf

    cond-mat.supr-con

    Lateral vortex motion in highly layered electron-doped superconductor Nd2-xCexCuO4

    Authors: O. E. Petukhova, M. R. Popov, A. S. Klepikova, N. G. Shelushinina, A. A. Ivanov, T. B. Charikova

    Abstract: The carrier transport and the motion of a vortex system in the electron-doped high-temperature superconductors Nd2-xCexCuO4 in underdoped and optimally doped (x = 0135, 0.145, 0.15) regions, in the area of the evolution from antiferromagnetic to superconducting order were investigated. To study the anisotropy of the transport properties of highly layered NdCeCuO system we have synthesized Nd2-xCex… ▽ More

    Submitted 8 June, 2020; v1 submitted 5 June, 2020; originally announced June 2020.

    Comments: 14 pages, 6 figures

  6. arXiv:1812.08124  [pdf

    cond-mat.supr-con

    Anisotropic temperature dependence of normal state resistivity in underdoped region of a layered electron-doped superconductor Nd2-xCexCuO4

    Authors: A. S. Klepikova, T . B. Charikova, N. G. Shelushinina, M. R. Popov, A. A. Ivanov

    Abstract: The aim of this work is to investigate the temperature dependencies both in CuO2-plane and out-of plane resistivities in electron-doped Nd2-xCexCuO4 for x from 0.135 up to 0.15 in order to analyze the anisotropy of the electrical transport in the process of the evolution from antiferromagnetic (AF) order in underdoped region to superconducting (SC) order in optimally doped region.

    Submitted 18 December, 2018; originally announced December 2018.

    Comments: 22 pages, 6 figures, 1 table. arXiv admin note: text overlap with arXiv:cond-mat/9806143 by other authors

  7. arXiv:1808.08727  [pdf

    cond-mat.mes-hall cond-mat.quant-gas

    Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime

    Authors: S. V. Gudina, Yu. G. Arapov, V. N. Neverov, A. P. Savelyev, S. M. Podgonykh, N. G. Shelushinina, M. V. Yakunin

    Abstract: We report an experimental study of quantum conductivity corrections for two-dimensional electron gas in a GaAs/InGaAs/GaAs single and double quantum wells in a wide temperature range (1.8-100) K. We perform a comparison of our experimental data for the longitudinal conductivity at zero magnetic field to the theory of interaction-induced corrections to th transport coefficients. In the temperature… ▽ More

    Submitted 27 August, 2018; originally announced August 2018.

  8. arXiv:1712.04776  [pdf, ps, other

    cond-mat.mes-hall

    Large-scale impurity potential in the quantum Hall effect for the HgTe quantum well with inverted band structure

    Authors: S. V. Gudina, Yu. G. Arapov, V. N. Neverov, E. G. Novik, S. M. Podgornykh, M. R. Popov, E. V. Ilchenko, N. G. Shelushinina, M. V. Yakunin, N. N. Mikhailov, S. A. Dvoretsky

    Abstract: We report on the longitudinal and Hall resistivities of a HgTe quantum well with inverted energy spectrum (dQW = 20.3 nm) measured in the quantum Hall (QH) regime at magnetic fields up to 9 T and temperatures 2-50 K. The temperature dependence of the QH plateau-plateau transition (PPT) widths and of variable range hopping (VRH) conduction on the Hall plateaus are analyzed. The data are presented i… ▽ More

    Submitted 15 December, 2017; v1 submitted 13 December, 2017; originally announced December 2017.

    Comments: 13 pages, 9 figures

  9. arXiv:1611.10019  [pdf

    cond-mat.supr-con

    The mixed-state Hall conductivity of single-crystal films $Nd_{2-x}Ce_xCuO_{4+δ}$ (x=0.14)

    Authors: N. G. Shelushinina, G. I. Harus, T. B. Charikova, D. S. Petukhov, O. E. Petukhova, A. A. Ivanov

    Abstract: The magnetic-field dependencies of the longitudinal and Hall resistivity of the electron-doped compounds $Nd_{2-x}Ce_xCuO_{4+δ}$ in underdoped region (x=0.14) were investigated. It was established experimentally a strong magnetic field dependence of the Hall conductivity, $σ_{xy}(B)=C-b/B$, in the region of magnetic fields corresponding to a transition from superconducting to resistive state. The… ▽ More

    Submitted 30 November, 2016; originally announced November 2016.

    Comments: 10 pages, 3 figures

  10. arXiv:1611.07674  [pdf, ps, other

    cond-mat.supr-con

    Hall resistivity correlations in disordered electron-doped Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ films

    Authors: T. Charikova, N. Shelushinina, G. Harus, D. Petukhov, O. Petukhova, A. Ivanov

    Abstract: The resistivity tensor correlations $ρ_{xy}$($B$)$\sim$ $[ρ_{xx}(B)]^β$ for the mixed state magnetic field dependencies of the resistivity tensor of electron-doped Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$/SrTiO$_3$ single crystal films near the antiferromagnetic (AF) - superconducting (SC) phase transition and with varying degree of disorder ($δ$) were studied. The decrease of $β$ from 1.2$\pm$0.2 at $x$ = 0.1… ▽ More

    Submitted 23 November, 2016; originally announced November 2016.

    Comments: 8 pages, 3 figures

  11. Resistivity tensor correlations in the mixed state of electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, D. S. Petukhov, O. E. Petukhova, A. A. Ivanov

    Abstract: The magnetic-field dependencies of the longitudinal and Hall resistance of the electron-doped compounds Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ in underdoped region with $x$=0.14 and with varying degrees of disorder ($δ$) were investigated. It was established experimentally that the correlation between the longitudinal electrical resistivity and the Hall resistivity can be analyzed on the basis of scaling rel… ▽ More

    Submitted 19 January, 2016; originally announced January 2016.

    Comments: 15 pages, 6 figures

  12. arXiv:1409.0608  [pdf, ps, other

    cond-mat.supr-con

    Doping effect on the evolution of the pairing symmetry in n-type superconductor near antiferromagnetic phase boundary

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, V. N. Neverov, D. S. Petukhov, O. E. Petukhova, A. A. Ivanov

    Abstract: We present the investigation results of the in-plane \{rho}(T) resistivity tensor at the temperature range 0.4-40 K in magnetic fields up to 90kOe (H||c, J||ab) for electron-doped Nd{2-x}Ce{x}CuO{4+δ} with different degree of disorder near antiferromagnetic - superconducting phase boundary. We have experimentally found that for optimally doped compound both the upper critical field slope and the c… ▽ More

    Submitted 2 September, 2014; originally announced September 2014.

    Comments: 9 pages, 2 figures

  13. Upper critical field in electron-doped cuprate superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$: two-gap model

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, D. S. Petukhov, V. N. Neverov, A. A. Ivanov

    Abstract: We present resistivity measurements of the upper critical field (H$_{c2}$) phase diagram as a function of temperature (T) for Nd$_{1.85}$Ce$_{0.15}$CuO$_{4+δ}$/SrTiO$_3$ single crystal films with different degree of disorder ($δ$) in magnetic fields up to 90 kOe at temperatures down to 0.4 K. The data are well described by a two-band/two-gap model for a superconductor in the dirty limit.

    Submitted 26 December, 2012; originally announced December 2012.

    Comments: 17 pages, 5 figures, 2 tables

  14. Doping effect on the anomalous behavior of the Hall effect in electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, D. S. Petukhov, A. V. Korolev, V. N. Neverov, A. A. Ivanov

    Abstract: Transport properties of Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystal films are investigated in magnetic fields $B$ up to 9T at $T$=(0.4-4.2)K. An analysis of normal state (at $B>B_{c2}$) Hall coefficient $R_H$$^n$ dependence on Ce doping takes us to a conclusion about the existence both of electron-like and hole-like contributions to transport in nominally electron-doped system. In accordance with… ▽ More

    Submitted 29 September, 2011; originally announced September 2011.

    Comments: 14 pages, 5 figures

  15. arXiv:1010.4365  [pdf, ps, other

    cond-mat.supr-con

    The estimation of coherence length for electron-doped superconductor Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$

    Authors: T. B. Charikova, G. I. Harus, N. G. Shelushinina, O. E. Sochinskaya

    Abstract: Results of low-temperature upper critical field measurements for Nd$_{2-x}$Ce$_x$CuO$_{4+δ}$ single crystals with various $x$ and nonstoichiometric disorder ($δ$) are presented. The coherence length of pair correlation $ξ$ and the product $k_F$$ξ$, where $k_F$ is the Fermi wave vector, are estimated. It is shown that for investigated single crystals parameter $k_F$$ξ$ $\cong$ 100 and thus phenomen… ▽ More

    Submitted 21 October, 2010; originally announced October 2010.

    Comments: 8 pages, 3 figures, 2 tables

  16. arXiv:1010.0082  [pdf

    cond-mat.supr-con

    Anomalous behavior of the Hall effect in electron-doped superconductor $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} with nonstoichiometric disorder

    Authors: T. B. Charikova, N. G. Shelushinina, G. I. Harus, V. N. Neverov, D. S. Petukhov, O. E. Sochinskaya, A. A. Ivanov

    Abstract: Magnetoresistivity and Hall effect measured in magnetic fields up to B=9T (B||c, J||ab) in electron-doped $Nd_{2-x}$Ce_{x}Cu$O_{4+δ} single crystal films with x = 0.14; 0.15; 0.18 and different oxygen content (δ) were studied in a temperature range of 0.4-4.2 K. The resistivity and Hall coefficient behaviors in the mixed state are discussed in the framework of flux-flow model with the inclusion of… ▽ More

    Submitted 1 October, 2010; originally announced October 2010.

    Comments: 8 pages, 4 figures, 2 tables

  17. arXiv:cond-mat/0512678  [pdf, ps, other

    cond-mat.mes-hall cond-mat.dis-nn

    Transport properties of 2D-electron gas in a n-InGaAs/GaAs DQW in a vicinity of low magnetic-field-induced Hall insulator--quantum Hall liquid transition

    Authors: Yu. G. Arapov, S. V. Gudina, G. I. Harus, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin, S. M. Podgornyh, E. A. Uskova, B. N. Zvonkov

    Abstract: The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0… ▽ More

    Submitted 28 December, 2005; originally announced December 2005.

    Comments: Accepted for publication in International Journal of Nanoscience

  18. arXiv:cond-mat/0404355  [pdf

    cond-mat.mes-hall

    Effect of Zeeman splitting on magnetoresistivity of 2D hole gas in a Ge_{1-x}Si_x/Ge/Ge_{1-x}Si_x quantum well

    Authors: Yu. G. Arapov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin, O. A. Kuznetsov, A. de Visser, L. Ponomarenko

    Abstract: For a two-dimensional (2D) hole system (confined within Ge layers of a multilayered p-Ge/Ge_{1-x}Si_x heterostructure) described by Luttinger Hamiltonian with the g-factor highly anisotropic for orientations of magnetic field perpendicular and parallel to the 2D plane (g_perp >> g_par), reported is an observation of low-temperature transition from metallic (dR/dT > 0) to insulator (dR/dT < 0) be… ▽ More

    Submitted 15 April, 2004; originally announced April 2004.

  19. Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes

    Authors: M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov, G. I. Harus, V. N. Neverov, N. G. Shelushinina, O. A. Kuznetsov, B. N. Zvonkov, E. A. Uskova, L. Ponomarenko, A. de Visser

    Abstract: In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglect… ▽ More

    Submitted 6 June, 2003; originally announced June 2003.

    Comments: To be presented at EP2DS-15, Nara, Japan, June 2003

    Journal ref: Physica E, v.22 (1-3), pp.68-71 (2004).

  20. arXiv:cond-mat/0212612  [pdf

    cond-mat.mes-hall cond-mat.str-el

    Localization and electron-electron interaction effects in magnetoresistance of p-type Ge/Ge_{1-x}Si_x heterostructures

    Authors: Yu. G. Arapov, G. I. Harus, V. N. Neverov, A. T. Lonchakov, N. G. Shelushinina, M. V. Yakunin

    Abstract: We report on the results of investigation the conductivity and magnetoresistance (MR) temperature dependencies for the two strained multilayer p-type Ge/Ge_{1-x}Si_x heterostructures. The usual logarithmic temperature dependencies for zero magnetic field conductivity due to the weak localization (WL) and electron- electron interaction (EEI) effects take place in both samples. For one of the samp… ▽ More

    Submitted 27 December, 2002; originally announced December 2002.

  21. The interplay of superconductivity and localization in Nd{2-x}Ce{x}CuO{4+δ} single crystal films

    Authors: G. I. Harus, A. I. Ponomarev, A. N. Ignatenkov, T. B. Charikova, L. D. Sabirzyanova, N. G. Shelushinina, V. F. Elesin, A. A. Ivanov, I. A. Rudnev

    Abstract: The influence of nonstoichiometric disorder on the in-plane resistivity and SC-transition has been investigated for Nd{2-x}Ce{x}CuO{4+δ} single crystal films (x=0.15 and 0.18). It is shown that with increasing of $δ$ the in-plane normal state resistivity increases (the mean free path diminishes) and SC-transition temperature decreases with essential broadening of the transition region. The obs… ▽ More

    Submitted 6 May, 2002; originally announced May 2002.

    Comments: 8 pages, 8 postscript figures, submitted to Physica C

  22. arXiv:cond-mat/0203435  [pdf

    cond-mat.dis-nn cond-mat.mes-hall

    Parabolic negative magnetoresistance in p-Ge/Ge1-xSix heterostructures

    Authors: Yu. G. Arapov, G. I. Harus, O. A. Kuznetsov, V. N. Neverov, N. G. Shelushinina

    Abstract: Quantum corrections to the conductivity due to the weak localization (WL) and the disorder-modified electron-electron interaction (EEI) are investigated for the high-mobility multilayer p-Ge/Ge1-xSix heterostructures at T = (0.1 - 20.0)K in magnetic field B up to 1.5T. Negative magnetoresistance with logarithmic dependence on T and linear in B^2 is observed for B >= 0.1T. Such a behavior is attr… ▽ More

    Submitted 21 March, 2002; originally announced March 2002.

    Comments: 3 pages, 4 figures

    Journal ref: Semiconductors 33, No 9 (September 1999) 978-980

  23. The key role of smooth impurity potential in formation of hole spectrum for p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

    Authors: Yu. G. Arapov, G. A. Alshanskii, G. I. Harus, V. N. Neverov, N. G. Shelushinina, M. V. Yakunin, O. A. Kuznetsov

    Abstract: We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole densities p_s = (1-5)10^11 cm^-2. Two models for the long-range random impurity potential (the model with randomly distributed charged centers located outside t… ▽ More

    Submitted 13 November, 2001; originally announced November 2001.

    Comments: Accepted for publication in Nanotechnology

    Journal ref: Nanotechnology 13 (2002) 86-93

  24. arXiv:cond-mat/0105285  [pdf

    cond-mat.mes-hall

    Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

    Authors: Yu. G. Arapov, O. A. Kuznetsov, V. N. Neverov, G. I. Harus, N. G. Shelushinina, M. V. Yakunin

    Abstract: Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density o… ▽ More

    Submitted 15 May, 2001; originally announced May 2001.

    Comments: to be presented at the 9-th International Symposium "Nanostructures-2001", St.Petersburg, Russia, June 2001

  25. Probing the p-Ge_{1-x}Si_x/Ge/p-Ge_{1-x}Si_x quantum well by means of the quantum Hall effect

    Authors: M. V. Yakunin, G. A. Alshanskii, Yu. G. Arapov, G. I. Harus, V. N. Neverov, N. G. Shelushinina, O. A. Kuznetsov

    Abstract: We have measured the temperature (0.1 < T < 15 K) and magnetic field (0 < B < 32 T) dependences of longitudinal and Hall resistivities for the p-Ge_{1-x}Si_x/Ge, x=~0.07, multilayers with different Ge layer widths 10 < d_w < 38 nm and hole densities p_s = (1-5)x10^{15} m^{-2}. An extremely high sensitivity of the experimental data [the structure of magnetoresistance traces, relative values of th… ▽ More

    Submitted 16 March, 2001; originally announced March 2001.

    Comments: pdf, 9 pages, 12 figures (included)

    Journal ref: Nanotechnology 11 (2000) 351-358

  26. arXiv:cond-mat/9912004  [pdf, ps, other

    cond-mat.supr-con

    Two-dimensional weak localization effects in high temperature superconductor Nd{2-x}Ce{x}CuO{4-d}

    Authors: G. I. Harus, A. N. Ignatenkov, A. I. Ponomarev, L. D. Sabirzyanova, N. G. Shelushinina, A. A. Ivanov

    Abstract: A systematic study of the resistivity and Hall effect in single crystal Nd{2-x}Ce{x}CuO{4-d} films (0.12 < x < 0.20) is presented, with special emphasis on the low-temperature dependence of the normal state conductance. Two-dimensional weak localization effects are found both in a normally conducting underdoped sample (x = 0.12) and in situ superconducting optimally doped (x = 0.15) or overdoped… ▽ More

    Submitted 30 November, 1999; originally announced December 1999.

    Comments: 7 pages, 9 postscript figures

    Report number: IMP-04-21-99

    Journal ref: JETP, 116, No.5(11) (1999) 1-12

  27. arXiv:cond-mat/9911307  [pdf, ps, other

    cond-mat.supr-con

    Two-dimensional quantum interference contributions to the magnetoresistance of Nd{2-x}Ce{x}CuO{4-d} single crystals

    Authors: G. I. Harus, A. N. Ignatenkov, A. I. Ponomarev, L. D. Sabirzyanova, N. G. Shelushinina, N. A. Babushkina

    Abstract: The 2D weak localization effects at low temperatures T = (0.2-4.2)K have been investigated in nonsuperconducting sample Nd{1.88}Ce{0.12}CuO{4-d} and in the normal state of the superconducting sample Nd{1.82}Ce{0.18}CuO{4-d} for B>B_c2. The phase coherence time and the effective thickness $d$ of a conducting CuO_2 layer have been estimated by the fitting of 2D weak localization theory expressions… ▽ More

    Submitted 19 November, 1999; originally announced November 1999.

    Comments: 5 pages, 4 postscript figures

    Journal ref: JETP Lett., 70 (1999) 97-104