Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe$_2$
Authors:
Valeria Sheina,
Guillaume Lang,
Vasily Stolyarov,
Vyacheslav Marchenkov,
Sergey Naumov,
Alexandra Perevalova,
Jean-Christophe Girard,
Guillemin Rodary,
Christophe David,
Leonnel Romuald Sop,
Debora Pierucci,
Abdelkarim Ouerghi,
Jean-Louis Cantin,
Brigitte Leridon,
Mahdi Ghorbani-Asl,
Arkady V. Krasheninnikov,
Hervé Aubin
Abstract:
In semiconductors, the identification of doping atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit coupling produces locked spin-valley states with expected long coherence time. Here we study the substitutional Bromine Br\textsubscript{Te} dopant in 2H-MoTe$_2$. Ele…
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In semiconductors, the identification of doping atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit coupling produces locked spin-valley states with expected long coherence time. Here we study the substitutional Bromine Br\textsubscript{Te} dopant in 2H-MoTe$_2$. Electron spin resonance measurements show that this dopant carries a spin with long-lived nanoseconds coherence time. Using scanning tunneling spectroscopy, we find that the hydrogenic wavefunctions associated with the dopant levels have characteristics spatial modulations that result from their hybridization to the \textbf{Q}-valleys of the conduction band. From a Fourier analysis of the conductance maps, we find that the amplitude and phase of the Fourier components change with energy according to the different irreducible representations of the impurity-site point-group symmetry. These results demonstrate that a dopant can inherit the locked spin-valley properties of the semiconductor and so exhibit long spin-coherence time.
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Submitted 1 May, 2023;
originally announced May 2023.
STM observation of the hinge-states of bismuth nanocrystals
Authors:
Tianzhen Zhang,
Valeria Sheina,
Sergio Vlaic,
Stéphane Pons,
Dimitri Roditchev,
Christophe David,
Guillemin Rodary,
Jean-Christophe Girard,
Hervé Aubin
Abstract:
The recent application of topological quantum chemistry to rhombohedral bismuth established the non-trivial band structure of this material. This is a 2$^{nd}$order topological insulator characterized by the presence of topology-imposed hinge-states. The spatial distribution of hinge-states and the possible presence of additional symmetry-protected surface-states is expected to depend on the cryst…
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The recent application of topological quantum chemistry to rhombohedral bismuth established the non-trivial band structure of this material. This is a 2$^{nd}$order topological insulator characterized by the presence of topology-imposed hinge-states. The spatial distribution of hinge-states and the possible presence of additional symmetry-protected surface-states is expected to depend on the crystal shape and symmetries. To explore this issue, we have grown bismuth nanocrystals in the tens of nanometers on the $(110)$ surface of InAs. By scanning tunneling spectroscopy, we mapped the local density of states on all facets and identified the presence of the hinge-states at the intersection of all facets. Our study confirm the classification of bulk bismuth as a 2$^{nd}$order topological insulator. We propose that the ubiquitous presence of the hinge-states result from their tunnel-coupling across the nanometer-sized facets.
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Submitted 12 March, 2023;
originally announced March 2023.
