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Clock Transitions Generated by Defects in Silica Glass
Authors:
Brendan C. Sheehan,
Guanchu Chen,
Jonathan R. Friedman
Abstract:
Clock transitions (CTs) in spin systems, which occur at avoided level crossings, enhance quantum coherence lifetimes T$_2$ because the transition becomes immune to the decohering effects of magnetic field fluctuations to first order. We present the first electron-spin resonance (ESR) characterization of CTs in certain defect-rich silica glasses, noting coherence times up to 16 $μ$s at the CTs. We…
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Clock transitions (CTs) in spin systems, which occur at avoided level crossings, enhance quantum coherence lifetimes T$_2$ because the transition becomes immune to the decohering effects of magnetic field fluctuations to first order. We present the first electron-spin resonance (ESR) characterization of CTs in certain defect-rich silica glasses, noting coherence times up to 16 $μ$s at the CTs. We find CT behavior at zero magnetic field in borosilicate and aluminosilicate glasses, but not in a variety of silica glasses lacking boron or aluminum. Annealing reduces or eliminates the zero-field signal. Since boron and aluminum have the same valence and are acceptors when substituted for silicon, we suggest the observed CT behavior could be generated by a spin-1 boron vacancy center within the borosilicate glass, and similarly, an aluminum-vacancy center in the aluminosilicate glass.
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Submitted 30 July, 2024;
originally announced July 2024.
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The loop-zag resonator: A loop-gap resonator design for improved sensitivity in electron-spin resonance experiments
Authors:
Brendan C. Sheehan,
Guanchu Chen,
Sai Chauhan,
Rilla McKeegan,
Francisca Abdo Arias,
William Henshon,
Charles A. Collett,
Jonathan R. Friedman
Abstract:
We present a novel design of loop-gap resonator, the loop-zag resonator, for sub-X-band electron-spin resonance spectroscopy. The loop-zag design can achieve improved coupling to small-sample spin systems through the improvement of sample filling factor and RF $B_1$ field. By introducing ``zags'' to the resonator's gap path, the capacitance is increased, accommodating a smaller loop size and there…
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We present a novel design of loop-gap resonator, the loop-zag resonator, for sub-X-band electron-spin resonance spectroscopy. The loop-zag design can achieve improved coupling to small-sample spin systems through the improvement of sample filling factor and RF $B_1$ field. By introducing ``zags'' to the resonator's gap path, the capacitance is increased, accommodating a smaller loop size and thereby a larger filling factor to maintain the requisite resonant frequency. We present experimental spectra on five different resonators, each with approximately the same resonant frequency of $\sim2.9$~GHz, showing that an increase in the number of zags and reduction in loop size gives rise to higher sensitivity. Finite-element simulations of these resonators provide estimates of the improved filling factors obtained through the addition of zags. The frequency range over which this loop-zag design is practical enables a breadth of future applications in microwave engineering, including ESR and ESR-like quantum information microwave techniques.
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Submitted 20 July, 2023;
originally announced July 2023.
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Direct Spectroscopic Observation of Berry Phase Interference in the Ni$_4$ Single-Molecule Magnet
Authors:
Brendan C. Sheehan,
Robert Kwark,
Charles A. Collett,
Thomaz A. Costa,
Rafael A. Allão Cassaro,
Jonathan R. Friedman
Abstract:
Berry phase effects in spin systems lead to the suppression of tunneling effects when different tunneling paths interfere destructively. Such effects have been seen in several single-molecule magnets (SMMs) through measurements of magnetization dynamics, where the experimental signal may arise from the contributions of numerous energy levels. Here we present experimental measurements of Berry phas…
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Berry phase effects in spin systems lead to the suppression of tunneling effects when different tunneling paths interfere destructively. Such effects have been seen in several single-molecule magnets (SMMs) through measurements of magnetization dynamics, where the experimental signal may arise from the contributions of numerous energy levels. Here we present experimental measurements of Berry phase interference effects that are determined through electron-spin resonance on a four-fold symmetric SMM. Specifically, we measure transitions between tunnel-split excited states in the Ni$_4$ SMM in the presence of a transverse field in the hard plane of the crystalline sample. By using a home-built rotation apparatus, the direction of the sample can be changed \textit{in situ} so that that the field direction can be swept through the entire hard plane of the sample. When the field is in certain directions in the plane, we observe a splitting of the transition, a hallmark of Berry phase interference. The experimental results are well reproduced by theoretical predictions, and fitting of the data provides information about the effects of dipolar interactions and sample misalignment.
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Submitted 9 December, 2020; v1 submitted 5 October, 2020;
originally announced October 2020.
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Iron-chalcogenide FeSe$_{0.5}$Te$_{0.5}$ coated superconducting tapes for high field applications
Authors:
Weidong Si,
Juan Zhou,
Qing Jie,
Ivo Dimitrov,
V. Solovyov,
P. D. Johnson,
J. Jaroszynski,
V. Matias,
C. Sheehan,
Qiang Li
Abstract:
The high upper critical field characteristic of the recently discovered iron-based superconducting chalcogenides opens the possibility of developing a new type of non-oxide high-field superconducting wires. In this work, we utilize a buffered metal template on which we grow a textured FeSe$_{0.5}$Te$_{0.5}$ layer, an approach developed originally for high temperature superconducting coated conduct…
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The high upper critical field characteristic of the recently discovered iron-based superconducting chalcogenides opens the possibility of developing a new type of non-oxide high-field superconducting wires. In this work, we utilize a buffered metal template on which we grow a textured FeSe$_{0.5}$Te$_{0.5}$ layer, an approach developed originally for high temperature superconducting coated conductors. These tapes carry high critical current densities (>1$\times10^{4}$A/cm$^{2}$) at about 4.2K under magnetic field as high as 25 T, which are nearly isotropic to the field direction. This demonstrates a very promising future for iron chalcogenides for high field applications at liquid helium temperatures. Flux pinning force analysis indicates a point defect pinning mechanism, creating prospects for a straightforward approach to conductor optimization.
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Submitted 13 June, 2011;
originally announced June 2011.
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Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates
Authors:
Takayoshi Katase,
Hidenori Hiramatsu,
Vladimir Matias,
Chris Sheehan,
Yoshihiro Ishimaru,
Toshio Kamiya,
Keiichi Tanabe,
Hideo Hosono
Abstract:
High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layer…
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High critical current densities (Jc) > 1 MA/cm2 were realized in cobalt-doped BaFe2As2 (BaFe2As2:Co) films on flexible metal substrates with biaxially-textured MgO base-layers fabricated by an ion-beam assisted deposition technique. The BaFe2As2:Co films showed small in-plane crystalline misorientations (delta fai BaFe2As2:Co) of ~3o regardless of doubly larger misorientaions of the MgO base-layers (delta fai MgO = 7.3o), and exhibited high self-field Jc up to 3.5 MA/cm2 at 2 K. These values are comparable to that on MgO single crystals and the highest Jc among iron pnictide superconducting tapes and wires ever reported. High in-field Jc suggests the existence of c-axis correlated vortex pinning centers.
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Submitted 20 June, 2011; v1 submitted 29 March, 2011;
originally announced March 2011.
