Showing 1–2 of 2 results for author: Shchapova, Y
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Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon
Authors:
D. W. Boukhvalov,
D. A. Zatsepin,
D. Yu. Biryukov,
Yu. V. Shchapova,
N. V. Gavrilov,
A. F. Zatsepin
Abstract:
Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of first-principle calculations, X-ray diffraction (XRD), and Raman spectroscopy demonstrate the amorphization of silicon substrate without any tendency to the segregatio…
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Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of first-principle calculations, X-ray diffraction (XRD), and Raman spectroscopy demonstrate the amorphization of silicon substrate without any tendency to the segregation of carbon in the samples synthesized at low fluencies. The formation of a SiO2-like structure at this stage was also detected. X-ray photoelectron spectroscopy (XPS), XRD, and Raman spectroscopy demonstrate that an increase in carbon content at 10^17 cm-2 fluence leads to the growth of 6H-SiC films on the surface of the amorphous silicon substrate. Atomic force microscopy (AFM) data obtained also demonstrates the decreasing of surface roughens after the formation of SiC film. XPS and Raman spectra suggest that excessive carbon content leaves the SiC matrix via the formation of an insignificant amount of partially oxidized carbon nanostructures. Optical measurements also support the claim of high-quality 6H-SiC film formation in the samples synthesized at 10^17 cm-2 fluence and demonstrate the absence of any detectable contribution of nanostructures formed from excessive carbon on the optical properties of the material under study.
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Submitted 28 May, 2024;
originally announced May 2024.
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Formation of yttrium oxalate phase filled by carbon clusters on the surface of yttrium oxide films
Authors:
D. W. Boukhvalov,
D. A. Zatsepin,
D. Yu. Biryukov,
Yu. V. Shchapova,
N. V. Gavrilov,
A. F. Zatsepin
Abstract:
In the current paper, we report the results of surface modification of cubic Y2O3 films employing carbon-ion implantation. The characterization results demonstrate the formation of a stable yttrium oxalate-based structure with cavities filled with carbon clusters. Theoretical simulations demonstrate that the incorporation of eighteen-atom carbon clusters into the cavities of Y2(C2O4)3 does not lea…
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In the current paper, we report the results of surface modification of cubic Y2O3 films employing carbon-ion implantation. The characterization results demonstrate the formation of a stable yttrium oxalate-based structure with cavities filled with carbon clusters. Theoretical simulations demonstrate that the incorporation of eighteen-atom carbon clusters into the cavities of Y2(C2O4)3 does not lead to valuable changes in the crystal structure of yttrium oxalate. X-ray diffraction and optical measurements demonstrate that the subsurface bulk area of cubic yttrium oxide remains unperturbed. The oxalate "skin" thickness with embedded carbon clusters is estimated to be approximately 10 nm. The prospective employing the method to manage optical properties and increase the biocompatibility of yttria and lanthanide oxides are discussed.
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Submitted 16 January, 2024;
originally announced January 2024.
