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Electric-field induced half-metallicity in a two-dimensional ferromagnetic Janus VSSe bilayer
Authors:
Khushboo Dange,
Shivprasad S. Shastri,
Alok Shukla
Abstract:
Two-dimensional (2D) half-metals with intrinsic ferromagnetism hold great potential for applications in spintronics. In this study, we aim to expand the known space of such 2D ferromagnetic (FM) half-metals by investigating bilayer of Janus VSSe, an FM semiconductor. Its structural, electronic, and magnetic properties are examined using density functional theory, employing the DFT+$U$ method, coup…
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Two-dimensional (2D) half-metals with intrinsic ferromagnetism hold great potential for applications in spintronics. In this study, we aim to expand the known space of such 2D ferromagnetic (FM) half-metals by investigating bilayer of Janus VSSe, an FM semiconductor. Its structural, electronic, and magnetic properties are examined using density functional theory, employing the DFT+$U$ method, coupled with the PBE functional. The stability of the bilayer is examined using ab initio molecular dynamics simulations at finite temperatures up to 400 K. To ensure the stability further, the elastic constants of the system have also been investigated and we found that VSSe bilayer manifests an easy plane of magnetization similar to its monolayer counterpart. At the DFT+$U$ level, the considered VSSe bilayer exhibits a tendency towards half-metallicity with a small band gap of 0.11 eV for the majority spin carriers, and of 0.66 eV for the minority ones. To include a transition from a semiconductor to a half-metal, the bilayer is subjected to an external electric field of varying strengths normal to the plane. The lack of horizontal mirror symmetry in the bilayer allows bidirectional tuning of the band gap, with different values for the field in "upward" and "downward" directions. The band gaps for the two spin channels increase with the increasing upward electric field, while the opposite happens for the downward fields, with the majority carrier gap closing at 0.16 V/$\unicode{x212B}$, making the material a spin gapless semiconductor. Further increase in the electric field renders the material half metallic at 0.18 V/$\unicode{x212B}$. Given the fact that these values of the external electric field are achievable in the lab suggests that the FM Janus VSSe bilayer is a promising candidate for spintronic devices.
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Submitted 28 August, 2025;
originally announced August 2025.
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Possible realization of three-dimensional quantum spin liquid behavior in HoVO4
Authors:
Dheeraj Ranaut,
Shivprasad S. Shastri,
Sudhir K. Pandey,
K. Mukherjee
Abstract:
The study of geometrically frustrated magnetic systems with unusual crystal field ground states offers a possibility of realizing the new aspects of physics of disordered systems. In this study, we report our results of structural, magnetic susceptibility, heat capacity measurements, along with density functional theory calculations on HoVO4; a compound in which the presence of a distorted kind of…
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The study of geometrically frustrated magnetic systems with unusual crystal field ground states offers a possibility of realizing the new aspects of physics of disordered systems. In this study, we report our results of structural, magnetic susceptibility, heat capacity measurements, along with density functional theory calculations on HoVO4; a compound in which the presence of a distorted kind of HoO8 polyhedral leads to multiple magnetic interaction paths. The observed broad maximum below 10 K in the temperature response of DC susceptibility curves implies the presence of short-range correlations. AC susceptibility rules out the possibility of any kind of spin freezing. Temperature dependent heat capacity measurement at zero field indicate towards the absence of long-range ordering, along with the presence of a broad maximum centered around 14 K. The residual heat capacity exhibits a characteristic power-law (Tα) behavior with the exponent α nearly equal to 2, which is analogous to that observed for other 3D quantum spin liquid systems. The density functional theory calculations signify the presence of dominant second and third nearest neighbor interactions, which in turn lead to magnetic frustration in our system. Our investigations suggest that HoVO4 can be a candidate for realizing a 3D quantum spin liquid state.
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Submitted 4 October, 2022;
originally announced October 2022.
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Temperature mapping of stacked silicon dies from x-ray diffraction intensities
Authors:
Darshan Chalise,
Peter Kenesei,
Sarvjit D. Shastri,
David G. Cahill
Abstract:
Increasing power densities in integrated circuits has led to an increased prevalence of thermal hotspots in integrated circuits. Tracking these thermal hotspots is imperative to prevent circuit failures. In 3D integrated circuits, conventional surface techniques like infrared thermometry are unable to measure 3D temperature distribution and optical and magnetic resonance techniques are difficult t…
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Increasing power densities in integrated circuits has led to an increased prevalence of thermal hotspots in integrated circuits. Tracking these thermal hotspots is imperative to prevent circuit failures. In 3D integrated circuits, conventional surface techniques like infrared thermometry are unable to measure 3D temperature distribution and optical and magnetic resonance techniques are difficult to apply due to the presence of metals and large current densities. X-rays offer high penetration depth and can be used to probe 3D structures. We report a method utilizing the temperature dependence of x-rays diffraction intensity via the Debye-Waller factor to simultaneously map the temperature of an individual silicon die that is a part of a stack of dies. Utilizing beamline 1-ID-E at the Advanced Photon Source (Argonne), we demonstrate for each individual silicon die, a temperature resolution of 3 K, a spatial resolution of 100 um x 400 um and a temporal resolution of 20 s. Utilizing a sufficiently high intensity laboratory source, e.g., from a liquid anode source, this method can be scaled down to laboratories for non-invasive temperature mapping of 3D integrated circuits.
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Submitted 29 March, 2022; v1 submitted 23 March, 2022;
originally announced March 2022.
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Studying the lifetime of charge and heat carriers due to intrinsic scattering mechanisms in FeVSb half-Heusler thermoelectric
Authors:
Shivprasad S. Shastri,
Sudhir K. Pandey
Abstract:
This work, presents a study of lifetime of carriers due to intrinsic scattering mechanisms $viz.$ electron-electron (EEI), electron-phonon (EPI) and phonon-phonon interactions (PPI) in a promising half-Heusler thermoelectric FeVSb. Using the full-$GW$ method, the effect of EEI and temperature on the valence and conduction band extrema and band gap are studied. The lifetime of carriers with tempera…
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This work, presents a study of lifetime of carriers due to intrinsic scattering mechanisms $viz.$ electron-electron (EEI), electron-phonon (EPI) and phonon-phonon interactions (PPI) in a promising half-Heusler thermoelectric FeVSb. Using the full-$GW$ method, the effect of EEI and temperature on the valence and conduction band extrema and band gap are studied. The lifetime of carriers with temperature are estimated at these band extrema. At 300 K, estimated value of lifetime at VBM (CBM) is $\sim$1.91 x10$^{-14}s$ ($\sim$2.05 x10$^{-14}s$). The estimated ground state band gap considering EEI is $\sim$378 meV. Next, the effect of EPI on the lifetime of electrons and phonons with temperature are discussed. The comparison of two electron lifetimes suggests that EEI should be considered in transport calculations along with EPI. The average acoustic, optical and overall phonon lifetimes due to EPI are studied with temperature. Further, the effect of PPI is studied by computing average phonon lifetime for acoustic and optical phonon branches. The lifetime of the acoustic phonons are higher compared to optical phonons which indicates acoustic phonons contribute more to lattice thermal conductivity ($κ_{ph}$). The comparison of phonon lifetime due to EPI and PPI suggests that, above 500 K EPI is the dominant phonon scattering mechanism and cannot be ignored in $κ_{ph}$ calculations. Lastly, a prediction of the power factor and figure of merit of n-type and p-type FeVSb is made by considering the temperature dependent carrier lifetime for the electronic transport terms. This study shows the importance of considering EEI in electronic transport calculations and EPI in phonon transport calculations. Our study is expected to provide results to further explore the thermoelectric transport in this material.
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Submitted 23 January, 2021;
originally announced January 2021.
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First-principles electronic structure, phonon properties, lattice thermal conductivity and prediction of figure of merit of FeVSb half-Heusler
Authors:
Shivprasad S. Shastri,
Sudhir K. Pandey
Abstract:
In this work, we have studied the electronic structure of a promising thermoelectric half-Heusler FeVSb using FP-LAPW method and SCAN meta-GGA including spin-orbit coupling. Using the obtained electronic structure and transport calculations we try to address the experimental Seebeck coefficient $S$ of FeVSb samples. The good agreement between the experimental and calculated $S$ suggests the band g…
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In this work, we have studied the electronic structure of a promising thermoelectric half-Heusler FeVSb using FP-LAPW method and SCAN meta-GGA including spin-orbit coupling. Using the obtained electronic structure and transport calculations we try to address the experimental Seebeck coefficient $S$ of FeVSb samples. The good agreement between the experimental and calculated $S$ suggests the band gap could be $\sim$0.7 eV. This is supported by the obtained mBJ band gap of $\sim$0.7 eV. Further, we study and report the phonon dispersion, density of states and thermodynamic properties. The effect of long range Coulomb interactions on phonon frequencies are also included by non-analytical term correction. Under quasi-harmonic approximation, the thermal expansion behaviour upto 1200 K is calculated. Using the first-principles anharmonic phonon calculations, the lattice thermal conductivity $κ_{ph}$ of FeVSb is obtained under single-mode relaxation time approximation considering the phonon-phonon interaction. At 300 K, the calculated $κ_{ph}$ is $\sim$18.6 W$m^{-1}K^{-1}$ which is higher compared to experimental value. But, above 500 K the calculated $κ_{ph}$ is in good agreement with experiment. A prediction of figure of merit $ZT$ and efficiency for p-type and n-type FeVSb is made by finding out optimal carrier concentration. At 1200 K, a maximum $ZT$ of $\sim$0.66 and $\sim$0.44 is expected for p-type and n-type FeVSb, respectively. For p-type and n-type materials, maximum efficiency of $\sim$12.2 \% and $\sim$6.0 \% are estimated for hot and cold temperature of 1200 K and 300 K, respectively. A possibility of achieving n-type and p-type FeVSb by various elemental doping/vacancy is also discussed. Our study is expected to help in further exploring the thermoelectric material FeVSb.
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Submitted 26 August, 2020;
originally announced August 2020.
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Thermoelectric properties, efficiency and thermal expansion of ZrNiSn half-Heusler by first-principles calculations
Authors:
Shivprasad S. Shastri,
Sudhir K. Pandey
Abstract:
In this work, we try to understand the experimental thermoelectric (TE) properties of a ZrNiSn sample with DFT and semiclassical transport calculations using SCAN functional. SCAN and mBJ provide the same band gap $E_{g}$ of $\sim$0.54 eV. This $E_{g}$ is found to be inadequate to explain the experimental data. The better explanation of experimental Seebeck coefficient $S$ is done by considering…
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In this work, we try to understand the experimental thermoelectric (TE) properties of a ZrNiSn sample with DFT and semiclassical transport calculations using SCAN functional. SCAN and mBJ provide the same band gap $E_{g}$ of $\sim$0.54 eV. This $E_{g}$ is found to be inadequate to explain the experimental data. The better explanation of experimental Seebeck coefficient $S$ is done by considering $E_{g}$ of 0.18 eV which suggests the non-stoichiometry and/or disorder in the sample. Further improvement in the $S$ is done by the inclusion of temperature dependence on chemical potential. In order to look for the possible enhanced TE properties obtainable in ZrNiSn with $E_{g}$ of $\sim$0.54 eV, power factor and optimal carrier concentrations are calculated. The optimal electron and hole concentrations required to attain highest power factors are $\sim$7.6x10$^{19}$ cm$^{-3}$ and $\sim$1.5x10$^{21}$ cm$^{-3}$, respectively. The maximum figure of merit $ZT$ calculated at 1200 K for n-type and p-type ZrNiSn are $\sim$0.6 and $\sim$0.7, respectively. The % efficiency obtained for n-type ZrNiSn is $\sim$5.1 % while for p-type ZrNiSn is $\sim$6.1 %. The $ZT$ are expected to be further enhanced to $\sim$1.2 (n-type) and $\sim$1.4 (p-type) at 1200 K by doping with heavy elements for thermal conductivity reduction. The phonon properties are also studied by calculating dispersion, total and partial density of states. The calculated Debye temperature of 382 K is in good agreement with experimental value of 398 K. The thermal expansion behaviour in ZrNiSn is studied under quasi-harmonic approximation. The average linear thermal expansion coefficient $α_{ave}(T)$ of $\sim$7.8x10$^{-6}$ K$^{-1}$ calculated in our work is quite close to the experimental values.
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Submitted 13 November, 2019;
originally announced November 2019.
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Two functionals approach in DFT for the prediction of thermoelectric properties of Fe$_{2}$ScX (X = P, As, Sb) full Heusler compounds
Authors:
Shivprasad S. Shastri,
Sudhir K. Pandey
Abstract:
In the quest of new thermoelectric (TE) materials with high power factors, full-Heusler compounds having flat band are found to be promising candidates. In this direction, Fe$_{2}$ScX (X=P,As,Sb) compounds are investigated using mBJ for the band gap and SCAN to describe the electronic bands and phonon properties for TE applications. The band gaps obtained from mBJ are 0.81 eV, 0.69 eV and 0.60 eV…
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In the quest of new thermoelectric (TE) materials with high power factors, full-Heusler compounds having flat band are found to be promising candidates. In this direction, Fe$_{2}$ScX (X=P,As,Sb) compounds are investigated using mBJ for the band gap and SCAN to describe the electronic bands and phonon properties for TE applications. The band gaps obtained from mBJ are 0.81 eV, 0.69 eV and 0.60 eV for Fe$_{2}$ScX compounds, respectively. The phonon dispersion, phonon density of states (DOS) and partial DOS are calculated. The phonon contributions to specific heat are obtained as a function of temperature under harmonic approximation. The electronic band structutre calculated from mBJ and SCAN functionals are qualitatively compared. The TE parameters are calculated for both hole and electron dopings under semiclassical theory. We use simple, but reasonable method to estimate phonon relaxation time ($τ_{ph}$). Using the specific heat, estimated $τ_{ph}$ and slopes (phase velocity) of acoustic branches in the linear region, lattice thermal conductivity ($κ_{ph}$) at 300 K is calculated for three compounds. The obtained values of $κ_{ph}$ with constant $τ_{ph}$ are 18.2, 13.6 and 10.3 $Wm^{-1}K^{-1}$, respectively. Finally, the temperature dependent figure of merit $ZT$ values are calculated for optimal carrier concentrations in the doping range considered, to evaluate the materials for TE application. The $ZT$ values for n-type Fe$_{2}$ScX, in 900-1200 K, are 0.34-0.43, 0.40-0.48 and 0.45-0.52, respectively. While, the p-type Fe$_{2}$ScX have $ZT$ of 0.25-0.34, 0.20-0.28 and 0.18-0.26, respectively in the same temperature range. The $ZT$ values suggest that, Fe$_{2}$ScX compounds can be promising materials in high temperature power generation application on successful synthesis and further $κ_{ph}$ reduction by methods like nanostructuring.
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Submitted 8 April, 2019;
originally announced April 2019.
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High-energy coherent X-ray diffraction microscopy of polycrystal grains: first steps towards a multi-scale approach
Authors:
Siddharth Maddali,
Jun-Sang Park,
Hemant Sharma,
Sarvjit Shastri,
Peter Kenesei,
Jonathan Almer,
Ross Harder,
Matthew J. Highland,
Youssef S. G. Nashed,
Stephan O. Hruszkewycz
Abstract:
We present proof-of-concept imaging measurements of a polycrystalline material that integrate the elements of conventional high-energy X-ray diffraction microscopy with coherent diffraction imaging techniques, and that can enable in-situ strain-sensitive imaging of lattice structure in ensembles of deeply embedded crystals over five decades of length scale upon full realization. Such multi-scale i…
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We present proof-of-concept imaging measurements of a polycrystalline material that integrate the elements of conventional high-energy X-ray diffraction microscopy with coherent diffraction imaging techniques, and that can enable in-situ strain-sensitive imaging of lattice structure in ensembles of deeply embedded crystals over five decades of length scale upon full realization. Such multi-scale imaging capabilities are critical to addressing important questions in a variety of research areas such as materials science and engineering, chemistry, and solid state physics. Towards this eventual goal, the following key aspects are demonstrated: 1) high-energy Bragg coherent diffraction imaging (HE-BCDI) of sub-micron-scale crystallites at 52 keV at current third-generation synchrotron light sources, 2) HE-BCDI performed in conjunction with far-field high-energy diffraction microscopy (ff-HEDM) on the grains of a polycrystalline sample in an smoothly integrated manner, and 3) the orientation information of an ensemble of grains obtained via ff-HEDM used to perform complementary HE-BCDI on multiple Bragg reflections of a single targeted grain. These steps lay the foundation for integration of HE-BCDI, which typically provides a spatial resolution tens of nanometers, into a broad suite of well-established HEDM methods, extending HEDM beyond the few-micrometer resolution bound and into the nanoscale, and positioning the approach to take full advantage of the orders-of-magnitude improvement of X-ray coherence expected at fourth generation light sources presently being built and commissioned worldwide.
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Submitted 17 April, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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Effect of density functionals on the vibrational and thermodynamic properties of Fe$_{2}$VAl and Fe$_{2}$TiSn compounds
Authors:
Shivprasad S. Shastri,
Sudhir K. Pandey
Abstract:
First-principles phonon calculations along with Kohn-Sham density functional theory (DFT) is an essential tool to study the lattice dynamics, thermodynamical properties and phase-transitions of materials. The two full-Heusler compounds Fe$_{2}$VAl and Fe$_{2}$TiSn are studied for lattice vibration dependent properties using finite displacement method and supercell approach. For the investigation,…
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First-principles phonon calculations along with Kohn-Sham density functional theory (DFT) is an essential tool to study the lattice dynamics, thermodynamical properties and phase-transitions of materials. The two full-Heusler compounds Fe$_{2}$VAl and Fe$_{2}$TiSn are studied for lattice vibration dependent properties using finite displacement method and supercell approach. For the investigation, four density functionals viz., LDA, PBE, PBEsol and meta-GGA SCAN are employed. Using these functionals, phonon dispersion, phonon density of states (DOS), partial density of states (PDOS) thermal propertis and zero-point energy are calculated at equilibrum lattice parameters under harmonic approximation. For the two compounds the Debye temperatures are calculated from the obtained phonon DOS which are $\sim$660 K and $\sim$540 K, respectively. The obtained results from different functionals are compared among each other. The overall phonon energy in the dispersion is found to be $\sim$15 meV higher in Fe$_{2}$VAl than the Fe$_{2}$TiSn compounds. For the two compounds PBE is yielding the lowest phonon frequencies while LDA or SCAN functional is giving the highest. The same pattern is observed in phonon DOS plots of two compounds. The zero-point energy calculated is the highest from SCAN (21.04 and 16.95 J) and the lowest from PBE functionals (20.09 and 16.02 J) obeying the same trend as frequency for both compounds. A general prediction of nature of lattice thermal conductivity is made based on the velocities of acoustic phonons which is in agreement with the qualitative behavior of reported experimental thermal conductivity of two compounds. Phonon spectra obtained from PBE and SCAN have similar general features while those from LDA and PBEsol have resembling features for Fe$_{2}$VAl, while this trend is not observed for the compound Fe$_{2}$TiSn.
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Submitted 15 June, 2018; v1 submitted 22 January, 2018;
originally announced January 2018.
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Theoretical Study of Thermopower Behavior of LaFeO$_{3}$ Compound in High Temperature Region
Authors:
Saurabh Singh,
Shivprasad S. Shastri,
Sudhir K. Pandey
Abstract:
The electronic structure and thermopower ($α$) behavior of LaFeO$_{3}$ compound were investigated by combining the ab-initio electronic structures and Boltzmann transport calculations. LSDA plus Hubbard U (U = 5 eV) calculation on G-type anti-ferromagnetic (AFM) configuration gives an energy gap of $\sim$2 eV, which is very close to the experimentally reported energy gap. The calculated values of…
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The electronic structure and thermopower ($α$) behavior of LaFeO$_{3}$ compound were investigated by combining the ab-initio electronic structures and Boltzmann transport calculations. LSDA plus Hubbard U (U = 5 eV) calculation on G-type anti-ferromagnetic (AFM) configuration gives an energy gap of $\sim$2 eV, which is very close to the experimentally reported energy gap. The calculated values of effective mass of holes (m$^{*}$$_{h}$) in valance band (VB) are found $\sim$4 times that of the effective mass of electrons (m$^{*}$$_{e}$) in conduction band (CB). The large effective masses of holes are responsible for the large and positive thermopower exhibited by this compound. The calculated values of $α$ using BoltzTraP code are found to be large and positive in the 300-1200 K temperature range, which is in agreement with the experimentally reported data.
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Submitted 29 September, 2017;
originally announced September 2017.
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A comparative study of different exchange-correlation functionals in understanding structural, electronic and thermoelectric properties of Fe$_{2}$VAl and Fe$_{2}$TiSn compounds
Authors:
Shivprasad S. Shastri,
Sudhir K. Pandey
Abstract:
Fe$_{2}$VAl and Fe$_{2}$TiSn are full Heusler compounds with non-magnetic ground state. The two compouds are good thermoelectric materials. PBE and LDA(PW92) are the two most commonly used density functionals to study the Heusler compounds. Along with these two well studied exchange-correlation functionals, recently developed PBEsol, mBJ and SCAN functionals are employed to study the two compounds…
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Fe$_{2}$VAl and Fe$_{2}$TiSn are full Heusler compounds with non-magnetic ground state. The two compouds are good thermoelectric materials. PBE and LDA(PW92) are the two most commonly used density functionals to study the Heusler compounds. Along with these two well studied exchange-correlation functionals, recently developed PBEsol, mBJ and SCAN functionals are employed to study the two compounds. Using the five functionals equilibrium lattice parameter and bulk modulus are calculated. Obtained values are compared with experimental reports wherever available. Electronic structure properties are studied by calculating dispersion curves, total and partial density of states. For Fe$_{2}$VAl, band gap of 0.22 eV is obtained from the mBJ potential which is in reasonable agreement with experimental value while, for Fe$_{2}$TiSn band gap of 0.68 eV is obtained. Fe$_{2}$VAl is predicted to be semimetallic with different values of negative gaps from LDA,PBEsol,PBE and SCAN functionals. Whereas, Fe$_{2}$TiSn is found to be semimetallic(semiconducting) from LDA,PBEsol(PBE,SCAN) functionals employed calculations. From the dispersion curve effective mass values are also computed to see the contribution to the Seebeck coefficient. In Fe$_{2}$TiSn, a flat band is present along the $Γ$-X direction with calculated value of effective mass $\sim$36 more than the mass of electron. The improvements or inadequacies among the functionals in explaining the properties of full Heusler alloys for thermoelectric application are thus observed through this study.
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Submitted 3 August, 2017;
originally announced August 2017.
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Polyhedral units and network connectivity in calcium aluminosilicate glasses from high-energy x-ray diffraction
Authors:
V. Petkov,
S. J. L. Billinge,
S. D. Shastri,
B. Himmel
Abstract:
Structure factors for Cax/2AlxSi1-xO2 glasses (x=0,0.25,0.5,0.67) extended to a wave vector of magnitude Q= 40 1/A have been obtained by high-energy x-ray diffraction. For the first time, it is possible to resolve the contributions of Si-O, Al-O and Ca-O coordination polyhedra to the experimental atomic pair distribution functions (PDF). It has been found that both Si and Al are four-fold coordi…
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Structure factors for Cax/2AlxSi1-xO2 glasses (x=0,0.25,0.5,0.67) extended to a wave vector of magnitude Q= 40 1/A have been obtained by high-energy x-ray diffraction. For the first time, it is possible to resolve the contributions of Si-O, Al-O and Ca-O coordination polyhedra to the experimental atomic pair distribution functions (PDF). It has been found that both Si and Al are four-fold coordinated and so participate in a continuous tetrahedral network at low values of x. The number of network breaking defects in the form of non-bridging oxygens (NBO's) increases slowly with x until x=0.5 (NBO's ~ 10% at x=0.5). By x=0.67 the network breaking defects become significant as evidenced by the significant drop in the average coordination number of Si. By contrast, Al-O tetrahedra remain free of NBO's and fully integrated in the Al/Si-O network for all values of x. Calcium maintains a rather uniform coordination sphere of approximately 5 oxygen atoms for all values of x. The results suggest that not only Si/Al-O tetrahedra but Ca-O polyhedra, too, play a role in determining the glassy structure.
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Submitted 29 July, 2000;
originally announced July 2000.
