Two-dimensional ReS2: Solution to the Unresolved Queries on Its Structure and Inter-layer Coupling Leading to Potential Optical Applications
Authors:
Janardhan Rao Gadde+,
Anasuya Karmakar+,
Tuhin Kumar Maji+,
Subhrajit Mukherjee,
Rajath Alexander,
Anjanashree M R Sharma,
Sarthak Das,
Anirban Mondal,
Kinshuk Dasgupta,
Akshay Naik,
Kausik Majumdar,
Ranjit Hawaldar,
K V Adarsh,
Samit Kumar Ray,
Debjani Karmakar
Abstract:
Over the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness dependent electronic properties and apparently contrasting experimental optical response. In this work, with elaborate first-principles investigations, using density functional theory (DFT) and time-dependent DFT (TDDFT), we identify the structure of ReS2, which is capable…
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Over the last few years, ReS2 has generated a myriad of unattended queries regarding its structure, the concomitant thickness dependent electronic properties and apparently contrasting experimental optical response. In this work, with elaborate first-principles investigations, using density functional theory (DFT) and time-dependent DFT (TDDFT), we identify the structure of ReS2, which is capable of reproducing and analyzing the layer-dependent optical response. The theoretical results are further validated by an in-depth structural, chemical, optical and optoelectronic analysis of the large-area ReS2 thin films, grown by chemical vapor deposition (CVD) process. Micro-Raman (MR), X-ray photoelectron spectroscopy (XPS), cross-sectional transmission electron microscopy (TEM) and energy-dispersive X-ray analysis (EDAX) have enabled the optimization of the uniform growth of the CVD films. The correlation between the layer-dependent optical and electronic properties of the excited states was established by static photoluminescence (PL) and transient absorption (TA) measurements. Sulfur vacancy-induced localized mid-gap states render a significantly long life-time of the excitons in these films. The ionic gel top-gated photo-detectors, fabricated from the as-prepared CVD films, exhibit a large photo-response of ~ 5 A/W and a remarkable detectivity of ~ 1011 Jones. The outcome of the present work will be useful to promote the application of vertically grown large-area films in the field of optics and opto-electronics.
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Submitted 1 May, 2021; v1 submitted 26 March, 2021;
originally announced March 2021.
Combinatorial Large-area MoS2/Anatase-TiO2 interface: A Pathway to Emergent Optical and Opto-electronic Functionalities
Authors:
Tuhin Kumar Maji,
J R Aswin,
Subhrajit Mukherjee,
Rajath Alexander,
Anirban Mondal,
Sarthak Das,
R. K. Sharma,
N. K. Chakraborty,
K. Dasgupta,
Anjanashree M R Sharma,
Ranjit Hawalder,
Manjiri Pandey,
Akshay Naik,
Kausik Majumdar,
Samir Kumar Pal,
K V Adarsh,
Samit Kumar Ray,
Debjani Karmakar
Abstract:
Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different t…
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Interface of transition metal dichalcogenide (TMDC) and high-k dielectric transition metal oxides (TMO) had triggerred umpteen discourses due to the indubitable impact of TMO in reducing the contact resistances and restraining the Fermi-level pinning for the metal-TMDC contacts. In the present work, we focus on the unresolved tumults of large-area TMDC/TMO interfaces, grown by adopting different techniques. Here, on a pulsed laser deposited (PLD) MoS2 thin film, a layer of TiO2 is grown by using both atomic layer deposition (ALD) and PLD. These two different techniques emanate TiO2 layers with different crystalline properties, thicknesses and interfacial morphologies, subsequently influencing the electronic and optical properties of the interfaces. In addition, they manifest a boost in the extent of p-type doping with increasing thickness of TiO2, as emerged after analyzing the core-level shifts of the X-ray photoelectron spectra (XPS). Density functional analysis of the MoS2/Anatase-TiO2 interfaces, for pristine and in presence of a wide range of interfacial defects, could explain the interdependence of doping and the terminating atomic-surface of TiO2 on MoS2. The optical properties of the interface, encompassing the photoluminescence, transient absorption and z-scan two-photon absorption indicate the presence of defect-induced localized mid-gap levels in MoS2/TiO2 (PLD), resulting quenched exciton signals. On the contrary, the relatively defect-free interface in MoS2/TiO2 (ALD) demonstrates a clear presence of both A and B excitons of MoS2. From the investigation of optical properties, we indicate that MoS2/TiO2 (PLD) interface may act as a promising saturable absorber. Moreover, MoS2/TiO2 (PLD) interface had resulted a better photo-transport. A potential application of MoS2/TiO2 (PLD) is demonstrated by the fabrication of a p-type photo-transistor with the ionic-gel top gate.
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Submitted 28 January, 2021;
originally announced January 2021.
