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Strain-Induced Antiferromagnetic-to-Altermagnetic Phase Transition and Topology in $(\mathrm{CrO}_2)_1/(\mathrm{TaO}_2)_2$ Superlattice
Authors:
Wanfei Shan,
Qun Yang,
Prineha Narang
Abstract:
Topological aspects in altermagnets have come into focus recently, and tuning the antiferromagnetic (AFM) state into an altermagnetic phase remains an active frontier. We realize both within a rutile superlattice here in this paper. With first principles calculation, we show that a uniaxial strain of only 0.5$\%$ along the c axis converts the $(\mathrm{CrO}_2)_1/(\mathrm{TaO}_2)_2$ rutile superlat…
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Topological aspects in altermagnets have come into focus recently, and tuning the antiferromagnetic (AFM) state into an altermagnetic phase remains an active frontier. We realize both within a rutile superlattice here in this paper. With first principles calculation, we show that a uniaxial strain of only 0.5$\%$ along the c axis converts the $(\mathrm{CrO}_2)_1/(\mathrm{TaO}_2)_2$ rutile superlattice from a trivial antiferromagnet into an altermagnet with topology accompanied by a weak SOC. The strain opens a spin-dependent band splitting of $\sim 1.1 eV$ and, despite the weak SOC together with in-plane magnetic moment orientation, generates an intrinsic anomalous Hall conductivity of order $10^3 S/cm$, comparable magnitude to that in ferromagnetic Weyl semimetals. Tiny SOC here with in-plane \(\text{Néel}\) orientation gaps out the Weyl nodal rings, giving rise to 16 Weyl points in the superlattice. Thus, we point out a simple route toward strain and field tunable, low-dissipation altermagnetic electronics.
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Submitted 25 September, 2025;
originally announced September 2025.
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Self-heating in SIS Mixers: Experimental Evidence and Theoretical Modeling
Authors:
Wenlei Shan,
Shohei Ezaki
Abstract:
This work investigates the relationship between self-heating and the characteristic features observed in the current-voltage characteristics (IVCs) of superconductor-insulator-superconductor (SIS) junctions. Finite-element analysis is employed to evaluate the steady-state temperature distribution around SIS junctions, explicitly accounting for the temperature dependence of the thermal conductiviti…
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This work investigates the relationship between self-heating and the characteristic features observed in the current-voltage characteristics (IVCs) of superconductor-insulator-superconductor (SIS) junctions. Finite-element analysis is employed to evaluate the steady-state temperature distribution around SIS junctions, explicitly accounting for the temperature dependence of the thermal conductivities of the constituent materials. This approach enables flexible estimation of self-heating under various practical conditions, such as different substrate materials, interfacial thermal resistances, and geometric layouts. A heating coefficient is extracted from the simulations and used as an input parameter for IVC modeling. Incorporating self-heating through temperature-dependent gap energy and quasiparticle broadening, the simulated IVCs reproduce bending features near the energy gap that agree with measured characteristics. Furthermore, when a weak link is present near an SIS junction, its critical current can be significantly reduced by junction heating, producing unexpected bends at the linear branch of measured IVCs. Conversely, such bends may serve as indicators that the junction temperature approaches the superconducting transition temperature.
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Submitted 3 September, 2025;
originally announced September 2025.
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Quantum Geometric Renormalization of the Hall Coefficient and Unconventional Hall Resistivity in ZrTe5
Authors:
Huimin Xie,
Bo Fu,
Huan-Wen Wang,
Wenyu Shan,
Shun-Qing Shen
Abstract:
The anomalous Hall effect (AHE), conventionally associated with time-reversal symmetry breaking in ferromagnetic materials, has recently been observed in nonmagnetic topological materials, raising questions about its origin. We unravel the unconventional Hall response in the nonmagnetic Dirac material ZrTe5, known for its massive Dirac bands and unique electronic and transport properties. Using th…
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The anomalous Hall effect (AHE), conventionally associated with time-reversal symmetry breaking in ferromagnetic materials, has recently been observed in nonmagnetic topological materials, raising questions about its origin. We unravel the unconventional Hall response in the nonmagnetic Dirac material ZrTe5, known for its massive Dirac bands and unique electronic and transport properties. Using the Kubo-Streda formula within the Landau level framework, we explore the interplay of quantum effects induced by the magnetic field (B) and disorder across the semiclassical and quantum regimes. In the semiclassical regime, the Hall resistivity remains linear in the magnetic field, but the Hall coefficient will be renormalized by the quantum geometric effects and electron-hole coherence, especially at low carrier densities where the disorder scattering dominates. In quantum limit, the Hall conductivity exhibits an unsaturating 1/B scaling. As a result, the transverse conductivity dominates transport in the ultra-quantum limit, and the Hall resistivity crosses over from B to B^{-1} dependence as the system transitions from the semiclassical regime to the quantum limit. This work elucidates the mechanisms underlying the unconventional Hall effect in ZrTe5 and provides insights into the AHE in other nonmagnetic Dirac materials as well.
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Submitted 21 August, 2025;
originally announced August 2025.
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Robust superzone gap opening in incommensurate antiferromagnetic semimetal EuAg$_4$Sb$_2$ under in-plane magnetic field
Authors:
J. Green,
Arpit Arora,
Madalynn Marshall,
Wanfei Shan,
Péter Udvarhelyi,
Zachary Morgan,
Prineha Narang,
Huibo Cao,
Ni Ni
Abstract:
The interplay between magnetism and charge transport in semimetals has emerged as a fertile ground for discovering novel electronic phenomena. A notable example is the recent discovery of electronic commensuration arising from a spin moiré superlattice (SMS), realized as double-q spin modulation in the antiferromagnetic semimetal EuAg$_4$Sb$_2$. Here, we investigate the in-plane magnetic-field tun…
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The interplay between magnetism and charge transport in semimetals has emerged as a fertile ground for discovering novel electronic phenomena. A notable example is the recent discovery of electronic commensuration arising from a spin moiré superlattice (SMS), realized as double-q spin modulation in the antiferromagnetic semimetal EuAg$_4$Sb$_2$. Here, we investigate the in-plane magnetic-field tunability of the SMS using neutron scattering, magnetic and transport measurements. We reveal an incommensurate noncollinear cycloidal magnetic ground state. Temperature-field phase diagrams constructed with field tilting uncover multiple spin-reoriented phases, suggesting the critical role of in-plane field components in driving magnetic transitions. Despite substantial spin reorientation of the double-q phase, we observe a persistent gap opening, evidenced by strong suppression in both Hall and longitudinal conductivities. Model calculations attribute this robustness to the stability of SMS under tilting fields. Our results establish EuAg$_4$Sb$_2$ as a tunable platform for exploring spin-texture-driven superzone gap opening in electronic states.
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Submitted 17 May, 2025;
originally announced May 2025.
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Nonreciprocal phonon dichroism induced by Fermi pocket anisotropy in two-dimensional Dirac materials
Authors:
Wen-Yu Shan
Abstract:
Electrons in two-dimensional (2D) Dirac materials carry local band geometric quantities, such as the Berry curvature and orbital magnetic moments, which, combined with electron-phonon coupling, may affect the phonon dynamics in an unusual way. Here, we propose intrinsic nonreciprocal linear and circular phonon dichroism in magnetic 2D Dirac materials, which originate from nonlocal band geometric q…
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Electrons in two-dimensional (2D) Dirac materials carry local band geometric quantities, such as the Berry curvature and orbital magnetic moments, which, combined with electron-phonon coupling, may affect the phonon dynamics in an unusual way. Here, we propose intrinsic nonreciprocal linear and circular phonon dichroism in magnetic 2D Dirac materials, which originate from nonlocal band geometric quantities of electrons and reduce to pure Fermi-surface properties for acoustic phonons. We find that to acquire the nonreciprocity, the Fermi pocket anisotropy rather than the chirality of electrons is crucial. Two possible mechanisms of Fermi pocket anisotropy are suggested: (i) trigonal warping and out-of-plane magnetization or (ii) Rashba spin-orbit interaction and in-plane magnetization. As a concrete example, we predict appreciable and tunable nonreciprocal phonon dichroism in 2H-MoTe 2 on a EuO substrate. Our finding points to a different route towards electrical control of phonon nonreciprocity for acoustoelectronics applications based on 2D quantum materials.
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Submitted 7 September, 2023;
originally announced September 2023.
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Magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulators
Authors:
Wan-Qing Zhu,
Wen-Yu Shan
Abstract:
Control and detection of antiferromagnetic topological materials are challenging since the total magnetization vanishes. Here we investigate the magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulator MnBi$_2$Te$_4$. We find that by breaking the combined mirror symmetries with either perpendicular electric field or external magnetic moment, Kerr and Faraday effects occur. U…
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Control and detection of antiferromagnetic topological materials are challenging since the total magnetization vanishes. Here we investigate the magneto-optical Kerr and Faraday effects in bilayer antiferromagnetic insulator MnBi$_2$Te$_4$. We find that by breaking the combined mirror symmetries with either perpendicular electric field or external magnetic moment, Kerr and Faraday effects occur. Under perpendicular electric field, antiferromagnetic topological insulators (AFMTI) show sharp peaks at the interband transition threshold, whereas trivial insulators show small adjacent positive and negative peaks. Gate voltage and Fermi energy can be tuned to reveal the differences between AFMTI and trivial insulators. We find that AFMTI with large antiferromagnetic order can be proposed as a pure magneto-optical rotator due to sizable Kerr (Faraday) angles and vanishing ellipticity. Under external magnetic moment, AFMTI and trivial insulators are significantly different in the magnitude of Kerr and Faraday angles and ellipticity. For the qualitative behaviors, AFMTI shows distinct features of Kerr and Faraday angles when the spin configurations of the system change. These phenomena provide new possibilities to optically detect and manipulate the layered topological antiferromagnets.
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Submitted 31 July, 2023;
originally announced July 2023.
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Anomalous circular phonon dichroism in transition metal dichalcogenides
Authors:
Wen-Yu Shan
Abstract:
A magnetic field can generally induce circular phonon dichroism based on the formation of Landau levels of electrons. Here, we study the magnetization-induced circular phonon dichroism in transition metal dichalcogenides, without forming Landau levels. We find that, instead of the conventional deformation potential coupling, pseudogauge-type electron-phonon coupling plays an essential role in the…
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A magnetic field can generally induce circular phonon dichroism based on the formation of Landau levels of electrons. Here, we study the magnetization-induced circular phonon dichroism in transition metal dichalcogenides, without forming Landau levels. We find that, instead of the conventional deformation potential coupling, pseudogauge-type electron-phonon coupling plays an essential role in the emergence of the phenomenon. As a concrete example, a large dichroism signal is obtained in monolayer MoTe2 on a EuO substrate, even without considering Rashba spin-orbit coupling. Due to the two-dimensional spin-valley-coupled band structure, MoTe2 shows a reciprocal and nonreciprocal absorption of circularly polarized acoustic phonons upon reversing the direction of phonon propagation and magnetization, respectively. By varying the gate voltage, a tunable circular phonon dichroism can be realized, which paves a way toward different physics and applications of two-dimensional acoustoelectronics.
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Submitted 2 January, 2023;
originally announced January 2023.
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Optical Coherent Injection of Carrier and Current in Twisted Bilayer graphene
Authors:
Ze Zheng,
Ying Song,
Yu Wei Shan,
Wei Xin,
Jin Luo Cheng
Abstract:
We theoretically investigate optical injection processes, including one- and two-photon carrier injection and two-color coherent current injection, in twisted bilayer graphene with moderate angles. The electronic states are described by a continuum model, and the spectra of injection coefficients are numerically calculated for different chemical potentials and twist angles, where the transitions b…
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We theoretically investigate optical injection processes, including one- and two-photon carrier injection and two-color coherent current injection, in twisted bilayer graphene with moderate angles. The electronic states are described by a continuum model, and the spectra of injection coefficients are numerically calculated for different chemical potentials and twist angles, where the transitions between different bands are understood by the electron energy resolved injection coefficients. The comparison with the injection in monolayer graphene shows the significance of the interlayer coupling in the injection processes. For undoped twisted bilayer graphene, all spectra of injection coefficients can be divided into three energy regimes, which vary with the twist angle. For very low photon energies in the linear dispersion regime, the injection is similar to graphene with a renormalized Fermi velocity determined by the twist angle; for very high photon energies where the interlayer coupling is negligible, the injection is the same as that of graphene; and in the middle regime around the transition energy of the Van Hove singularity, the injection shows fruitful fine structures. Furthermore, the two-photon carrier injection diverges for the photon energy in the middle regime due to the existence of double resonant transitions.
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Submitted 17 November, 2021;
originally announced November 2021.
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Fano resonance enabled infrared nano-imaging of local strain in bilayer graphene
Authors:
Jing Du,
Bosai Lyu,
Wanfei Shan,
Jiajun Chen,
Xianliang Zhou,
Jingxu Xie,
Aolin Deng,
Cheng Hu,
Qi Liang,
Guibai Xie,
Xiaojun Li,
Weidong Luo,
Zhiwen Shi
Abstract:
Detection of local strain at the nanometer scale with high sensitivity remains challenging. Here we report near-field infrared nano-imaging of local strains in bilayer graphene through probing strain-induced shifts of phonon frequency. As a non-polar crystal, intrinsic bilayer graphene possesses little infrared response at its transverse optical (TO) phonon frequency. The reported optical detectio…
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Detection of local strain at the nanometer scale with high sensitivity remains challenging. Here we report near-field infrared nano-imaging of local strains in bilayer graphene through probing strain-induced shifts of phonon frequency. As a non-polar crystal, intrinsic bilayer graphene possesses little infrared response at its transverse optical (TO) phonon frequency. The reported optical detection of local strain is enabled by applying a vertical electrical field that breaks the symmetry of the two graphene layers and introduces finite electrical dipole moment to graphene phonon. The activated phonon further interacts with continuum electronic transitions, and generates a strong Fano resonance. The resulted Fano resonance features a very sharp near-field infrared scattering peak, which leads to an extraordinary sensitivity of ~0.002% for the strain detection. Our studies demonstrate the first nano-scale near-field Fano resonance, provide a new way to probe local strains with high sensitivity in non-polar crystals, and open exciting possibilities for studying strain-induced rich phenomena.
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Submitted 19 April, 2021;
originally announced April 2021.
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Impact of novel electron-phonon coupling mechanisms on valley physics in two-dimensional materials
Authors:
Wen-Yu Shan
Abstract:
We systematically study the impact of various electron-acoustic-phonon coupling mechanisms on valley physics in two-dimensional materials. In the static strain limit, we find that Dirac cone tilt and deformation potential have analogous valley Hall response since they fall into the same universality class of pseudospin structure. However, such argument fails for the coupling mechanism with positio…
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We systematically study the impact of various electron-acoustic-phonon coupling mechanisms on valley physics in two-dimensional materials. In the static strain limit, we find that Dirac cone tilt and deformation potential have analogous valley Hall response since they fall into the same universality class of pseudospin structure. However, such argument fails for the coupling mechanism with position-dependent Fermi velocity. For the isotropic case, a significant valley Hall effect occurs near charge neutrality similar to the bond-length change, whereas for the anisotropic case, the geometric valley transport is suppressed, akin to the deformation potential. Gap opening mechanism by nonuniform strain is found to totally inhibit the valley Hall transport, even if the dynamics of strains are introduced. By varying gate voltage, a tunable phonon-assisted valley Hall response can be realized, which paves a way toward rich phenomena and new functionalities of valley acoustoelectronics.
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Submitted 16 December, 2020;
originally announced December 2020.
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Microstructure Design of Low-Melting-Point Alloy (LMPA)/ Polymer Composites for Dynamic Dry Adhesion Tuning in Soft Gripping
Authors:
Yaopengxiao Xu,
Pei-En Chen,
Wenxiang Xu,
Yi Ren,
Wanliang Shan,
Yang Jiao
Abstract:
Tunable dry adhesion is a crucial mechanism in compliant manipulation. The gripping force, mainly originated from the van der Waals force between the adhesive composite and the object to be gripped, can be controlled by reversibly varying the physical properties (e.g., stiffness) of the composite via external stimuli. The maximal gripping force Fmax and its tunability depend on, among other factor…
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Tunable dry adhesion is a crucial mechanism in compliant manipulation. The gripping force, mainly originated from the van der Waals force between the adhesive composite and the object to be gripped, can be controlled by reversibly varying the physical properties (e.g., stiffness) of the composite via external stimuli. The maximal gripping force Fmax and its tunability depend on, among other factors, the stress distribution on the gripping interface and its fracture dynamics (during detaching), which in turn are determined by the composite microstructure. Here, we present a computational framework for the modeling and design of a class of binary smart composites containing a porous low-melting-point alloy (LMPA) phase and a polymer phase, in order to achieve desirable dynamically tunable dry adhesion. In particular, we employ spatial correlation functions to quantify, model and represent the complex bi-continuous microstructure of the composites, from which a wide spectrum of realistic virtual 3D composite microstructures can be generated using stochastic optimization. A recently developed volume-compensated lattice-particle (VCLP) method is then employed to model the dynamic interfacial fracture process to compute Fmax for different composite microstructures. We focus on the interface defect tuning (IDT) mechanism for dry adhesion tuning enabled by the composite, in which the thermal expansion of the LMPA phase due to Joule heating initializes small cracks on the adhesion interface, subsequently causing the detachment of the gripper from the object due to interfacial fracture. We find that for an optimal microstructure among the ones studied here, a 10-fold dynamic tuning of Fmax before and after the thermal expansion of the LMPA phase can be achieved. Our computational results can provide valuable guidance for experimental fabrication of the LMPA-polymer composites.
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Submitted 18 February, 2020;
originally announced February 2020.
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Strain-Fluctuation-Induced Near-Quantization of Valley Hall Conductivity in Graphene Systems
Authors:
Wen-Yu Shan,
Di Xiao
Abstract:
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley Hall conductivity in the band transport regime, which originates from an enhanced side jump of a Dirac electron when it scatters off the gauge potential. By assumi…
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We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley Hall conductivity in the band transport regime, which originates from an enhanced side jump of a Dirac electron when it scatters off the gauge potential. By assuming a small residue charge density our theory reproduces qualitatively the temperature- and gap-dependence of the observed valley Hall effect at the charge neutral point. Our study suggests that the valley Hall effect in graphene systems represents a new paradigm for the anomalous Hall physics where gauge disorder plays an important role.
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Submitted 15 May, 2019;
originally announced May 2019.
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Transition between globule and stretch states of a self-attracting chain in the repulsive active particle bath
Authors:
Yi-qi Xia,
Wen-jie Shan,
Wen-de Tian,
Kang Chen,
Yu-qiang Ma
Abstract:
Folding and unfolding of biopolymers are often manipulated in experiment by tuning pH, temperature, single-molecule force or shear field. Here we carry out Brownian dynamics simulations to explore the behavior of a single self-attracting chain in the suspension of self-propelling particles (SPPs). As the propelling force increases, globule-stretch (G-S) transition of the chain happens due to the e…
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Folding and unfolding of biopolymers are often manipulated in experiment by tuning pH, temperature, single-molecule force or shear field. Here we carry out Brownian dynamics simulations to explore the behavior of a single self-attracting chain in the suspension of self-propelling particles (SPPs). As the propelling force increases, globule-stretch (G-S) transition of the chain happens due to the enhanced disturbance from SPPs. Two distinct mechanisms of the transition in the limits of low and high rotational diffusion rates of SPPs have been observed: shear effect at low rate and collision-induced melting at high rate. The G-S and S-G (stretch-globule) curves form hysteresis loop at low rate, while they merge at high rate. Besides, we find two competing effects result in the non-monotonic dependence of the G-S transition on the SPP density at low rate. Our results suggest an alternative approach to manipulating the folding and unfolding of (bio)polymers by utilizing active agents.
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Submitted 30 May, 2018;
originally announced May 2018.
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Optical Selection Rule of Excitons in Gapped Chiral Fermion Systems
Authors:
Xiaoou Zhang,
Wen-Yu Shan,
Di Xiao
Abstract:
We show that the exciton optical selection rule in gapped chiral fermion systems is governed by their winding number $w$, a topological quantity of the Bloch bands. Specifically, in a $C_N$-invariant chiral fermion system, the angular momentum of bright exciton states is given by $w \pm 1 + nN$ with $n$ being an integer. We demonstrate our theory by proposing two chiral fermion systems capable of…
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We show that the exciton optical selection rule in gapped chiral fermion systems is governed by their winding number $w$, a topological quantity of the Bloch bands. Specifically, in a $C_N$-invariant chiral fermion system, the angular momentum of bright exciton states is given by $w \pm 1 + nN$ with $n$ being an integer. We demonstrate our theory by proposing two chiral fermion systems capable of hosting dark $s$-like excitons: gapped surface states of a topological crystalline insulator with $C_4$ rotational symmetry and biased $3R$-stacked MoS$_2$ bilayers. In the latter case, we show that gating can be used to tune the $s$-like excitons from bright to dark by changing the winding number. Our theory thus provides a pathway to electrical control of optical transitions in two-dimensional material.
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Submitted 16 February, 2018; v1 submitted 25 September, 2017;
originally announced September 2017.
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Multiple Hot-Carrier Collection in Photo-Excited Graphene Moire Superlattices
Authors:
Sanfeng Wu,
Lei Wang,
You Lai,
Wen-Yu Shan,
Grant Aivazian,
Xian Zhang,
Takashi Taniguchi,
Kenji Watanabe,
Di Xiao,
Cory Dean,
James Hone,
Zhiqiang Li,
Xiaodong Xu
Abstract:
In conventional light harvesting devices, the absorption of a single photon only excites one electron, which sets the standard limit of power-conversion efficiency, such as the Shockley-Queisser limit. In principle, generating and harnessing multiple carriers per absorbed photon can improve the efficiency and possibly overcome this limit. Here, we report the observation of multiple hot carrier col…
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In conventional light harvesting devices, the absorption of a single photon only excites one electron, which sets the standard limit of power-conversion efficiency, such as the Shockley-Queisser limit. In principle, generating and harnessing multiple carriers per absorbed photon can improve the efficiency and possibly overcome this limit. Here, we report the observation of multiple hot carrier collection in graphene-boron-nitride Moire superlattice structures. A record-high zero-bias photoresponsivity of 0.3 ampere per watt, equivalently, an external quantum efficiency exceeding 50 percent, is achieved utilizing graphene photo-Nernst effect, which demonstrates a collection of at least 5 carriers per absorbed photon. We reveal that this effect arises from the enhanced Nernst coefficient through Lifshtiz transition at low energy Van Hove singularities, which is an emergent phenomenon due to the formation of Moire minibands. Our observation points to a new means for extremely efficient and flexible optoelectronics based on van der Waals heterostructures.
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Submitted 15 March, 2016;
originally announced March 2016.
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RKKY interaction of magnetic impurities in Dirac and Weyl semimetals
Authors:
Hao-Ran Chang,
Jianhui Zhou,
Shi-Xiong Wang,
Wen-Yu Shan,
Di Xiao
Abstract:
We theoretically study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between magnetic impurities in both Dirac and Weyl semimetals (SMs). We find that the internode process, as well as the unique three-dimensional spin-momentum locking, has significant influences on the RKKY interaction, resulting in both a Heisenberg and an Ising term, and an additional Dzyaloshinsky-Moriya term if the inv…
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We theoretically study the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction between magnetic impurities in both Dirac and Weyl semimetals (SMs). We find that the internode process, as well as the unique three-dimensional spin-momentum locking, has significant influences on the RKKY interaction, resulting in both a Heisenberg and an Ising term, and an additional Dzyaloshinsky-Moriya term if the inversion symmetry is absent. These interactions can lead to rich spin textures and possible ferromagnetism in Dirac and time-reversal symmetry-invariant Weyl SMs. The effect of anisotropic Dirac and Weyl nodes on the RKKY interaction is also discussed. Our results provide an alternative scheme to engineer topological SMs and shed new light on the application of Dirac and Weyl SMs in spintronics.
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Submitted 7 December, 2015; v1 submitted 15 September, 2015;
originally announced September 2015.
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Berry phase modification to the energy spectrum of excitons
Authors:
Jianhui Zhou,
Wen-Yu Shan,
Wang Yao,
Di Xiao
Abstract:
By quantizing the semiclassical motion of excitons, we show that the Berry curvature can cause an energy splitting between exciton states with opposite angular momentum. This splitting is determined by the Berry curvature flux through the $\bm k$-space area spanned by the relative motion of the electron-hole pair in the exciton wave function. Using the gapped two-dimensional Dirac equation as a mo…
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By quantizing the semiclassical motion of excitons, we show that the Berry curvature can cause an energy splitting between exciton states with opposite angular momentum. This splitting is determined by the Berry curvature flux through the $\bm k$-space area spanned by the relative motion of the electron-hole pair in the exciton wave function. Using the gapped two-dimensional Dirac equation as a model, we show that this splitting can be understood as an effective spin-orbit coupling effect. In addition, there is also an energy shift caused by other "relativistic" terms. Our result reveals the limitation of the venerable hydrogenic model of excitons, and highlights the importance of the Berry curvature in the effective mass approximation.
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Submitted 21 September, 2015; v1 submitted 31 July, 2015;
originally announced July 2015.
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Josephson effects in the junction formed by \emph{DIII}-class topological and $s$-wave superconductors with an embedded quantum dot
Authors:
Zhen Gao,
Wan-Fei Shan,
Wei-Jiang Gong
Abstract:
We investigate the Josephson effects in the junction formed by \emph{DIII}-class topological and $s$-wave superconductors, by embedding a quantum dot in the junction. Three dot-superconductor coupling manners are considered, respectively. As a result, the Josephson current is found to oscillate in $2π$ period. Moreover, the presence of Majorana doublet in the \emph{DIII}-class superconductor rende…
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We investigate the Josephson effects in the junction formed by \emph{DIII}-class topological and $s$-wave superconductors, by embedding a quantum dot in the junction. Three dot-superconductor coupling manners are considered, respectively. As a result, the Josephson current is found to oscillate in $2π$ period. Moreover, the presence of Majorana doublet in the \emph{DIII}-class superconductor renders the current finite at the case of zero phase difference, with its sign determined by the fermion parity of such a jucntion. In addition, the dot-superconductor coupling plays a nontrivial role in adjusting the Josephson current. When the $s$-wave superconductor couples to the dot in the weak limit, the current direction will have an opportunity to reverse. The results in this work will be helpful for understanding the transport properties of the \emph{DIII}-class superconductor.
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Submitted 19 June, 2015; v1 submitted 16 June, 2015;
originally announced June 2015.
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Spin responses and effective Hamiltonian for the two dimensional electron gas at oxide interface {LaAlO}$_3$/{SrTiO}$_3$
Authors:
Jianhui Zhou,
Wen-Yu Shan,
Di Xiao
Abstract:
Strong Rashba spin-orbit coupling (SOC) of the two-dimensional electron gas (2DEG) at the oxide interface $\mathrm{LaAlO_{3}/SrTiO_{3}}$ underlies a variety of exotic physics, but its nature is still under debate. We derive an effective Hamiltonian for the 2DEG at the oxide interface $\mathrm{LaAlO_{3}/SrTiO_{3}}$ and find a different anisotropic Rashba SOC for the $d_{xz}$ and $d_{yz}$ orbitals.…
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Strong Rashba spin-orbit coupling (SOC) of the two-dimensional electron gas (2DEG) at the oxide interface $\mathrm{LaAlO_{3}/SrTiO_{3}}$ underlies a variety of exotic physics, but its nature is still under debate. We derive an effective Hamiltonian for the 2DEG at the oxide interface $\mathrm{LaAlO_{3}/SrTiO_{3}}$ and find a different anisotropic Rashba SOC for the $d_{xz}$ and $d_{yz}$ orbitals. This anisotropic Rashba SOC leads to anisotropic static spin susceptibilities and also distinctive behavior of the spin Hall conductivity. These unique spin responses may be used to determine the nature of the Rashba SOC experimentally and shed light on the orbital origin of the 2DEG.
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Submitted 9 June, 2015; v1 submitted 8 April, 2015;
originally announced April 2015.
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Gate-tunable Topological Valley Transport in Bilayer Graphene
Authors:
Mengqiao Sui,
Guorui Chen,
Liguo Ma,
Wenyu Shan,
Dai Tian,
Kenji Watanabe,
Takashi Taniguchi,
Xiaofeng Jin,
Wang Yao,
Di Xiao,
Yuanbo Zhang
Abstract:
Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, though the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contra…
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Valley pseudospin, the quantum degree of freedom characterizing the degenerate valleys in energy bands, is a distinct feature of two-dimensional Dirac materials. Similar to spin, the valley pseudospin is spanned by a time reversal pair of states, though the two valley pseudospin states transform to each other under spatial inversion. The breaking of inversion symmetry induces various valley-contrasted physical properties; for instance, valley-dependent topological transport is of both scientific and technological interests. Bilayer graphene (BLG) is a unique system whose intrinsic inversion symmetry can be controllably broken by a perpendicular electric field, offering a rare possibility for continuously tunable valley-topological transport. Here, we used a perpendicular gate electric field to break the inversion symmetry in BLG, and a giant nonlocal response was observed as a result of the topological transport of the valley pseudospin. We further showed that the valley transport is fully tunable by external gates, and that the nonlocal signal persists up to room temperature and over long distances. These observations challenge contemporary understanding of topological transport in a gapped system, and the robust topological transport may lead to future valleytronic applications.
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Submitted 19 January, 2015;
originally announced January 2015.
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Optical generation and detection of pure valley current in monolayer transition metal dichalcogenides
Authors:
Wen-Yu Shan,
Jianhui Zhou,
Di Xiao
Abstract:
We propose a practical scheme to generate a pure valley current in monolayer transition metal dichalcogenides by one-photon absorption of linearly polarized light. We show that the pure valley current can be detected by either photoluminescence measurements or the ultrafast pump-probe technique. Our method, together with the previously demonstrated generation of valley polarization, opens up the e…
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We propose a practical scheme to generate a pure valley current in monolayer transition metal dichalcogenides by one-photon absorption of linearly polarized light. We show that the pure valley current can be detected by either photoluminescence measurements or the ultrafast pump-probe technique. Our method, together with the previously demonstrated generation of valley polarization, opens up the exciting possibility of ultrafast optical-only manipulation of the valley index. The tilted field effect on the valley current in experiment is also discussed.
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Submitted 19 January, 2015;
originally announced January 2015.
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Influence of an embedded quantum dot on the Josephson effect in the topological superconducting junction with Majorana doublets
Authors:
Wei-Jiang Gong,
Zhen Gao,
Wan-Fei Shan,
Guang-Yu Yi
Abstract:
One Majorana doublet can be realized at each end of the time-reversal-invariant Majorana nanowires. We investigate the Josephson effect in the Majorana-doublet-presented junction modified by different inter-doublet coupling manners. It is found that when the Majorana doublets couple indirectly via a non-magnetic quantum dot, only the normal Josephson effects occur, and the fermion parity in the sy…
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One Majorana doublet can be realized at each end of the time-reversal-invariant Majorana nanowires. We investigate the Josephson effect in the Majorana-doublet-presented junction modified by different inter-doublet coupling manners. It is found that when the Majorana doublets couple indirectly via a non-magnetic quantum dot, only the normal Josephson effects occur, and the fermion parity in the system just affects the current direction and amplitude. However, in the odd-parity case, applying finite magnetic field on the quantum dot can induce the appearance of the fractional Josephson effect. Next, when the direct and indirect couplings between the Majorana doublets coexist, no fractional Josephson effect takes place, regardless of finite magnetic field on the quantum dot. Instead, the $π$-period current has an opportunity to appear in some special cases. All the results are clarified by analyzing the influence of the fermion occupation in the quantum dot on the parity conservation in the whole system. We ascertain that this work will be helpful for describing the dot-assisted Josephson effect between the Majorana doublets.
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Submitted 13 January, 2015; v1 submitted 11 January, 2015;
originally announced January 2015.
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Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
Authors:
Gui-Bin Liu,
Wen-Yu Shan,
Yugui Yao,
Wang Yao,
Di Xiao
Abstract:
We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly contributed by the $d_{z^{2}}$, $d_{xy}$, and $d_{x^{2}-y^{2}}$ orbitals of $M$ atoms, the TB model is constructed using these three orbitals based on the symm…
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We present a three-band tight-binding (TB) model for describing the low-energy physics in monolayers of group-VIB transition metal dichalcogenides $MX_2$ ($M$=Mo, W; $X$=S, Se, Te). As the conduction and valence band edges are predominantly contributed by the $d_{z^{2}}$, $d_{xy}$, and $d_{x^{2}-y^{2}}$ orbitals of $M$ atoms, the TB model is constructed using these three orbitals based on the symmetries of the monolayers. Parameters of the TB model are fitted from the first-principles energy bands for all $MX_2$ monolayers. The TB model involving only the nearest-neighbor $M$-$M$ hoppings is sufficient to capture the band-edge properties in the $\pm K$ valleys, including the energy dispersions as well as the Berry curvatures. The TB model involving up to the third-nearest-neighbor $M$-$M$ hoppings can well reproduce the energy bands in the entire Brillouin zone. Spin-orbit coupling in valence bands is well accounted for by including the on-site spin-orbit interactions of $M$ atoms. The conduction band also exhibits a small valley-dependent spin splitting which has an overall sign difference between Mo$X_{2}$ and W$X_{2}$. We discuss the origins of these corrections to the three-band model. The three-band TB model developed here is efficient to account for low-energy physics in $MX_2$ monolayers, and its simplicity can be particularly useful in the study of many-body physics and physics of edge states.
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Submitted 24 January, 2014; v1 submitted 26 May, 2013;
originally announced May 2013.
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Spin Hall effect in spin-valley coupled monolayer transition-metal dichalcogenides
Authors:
Wen-Yu Shan,
Hai-Zhou Lu,
Di Xiao
Abstract:
We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the si…
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We study both the intrinsic and extrinsic spin Hall effect in spin-valley coupled monolayers of transition metal dichalcogenides. We find that whereas the skew-scattering contribution is suppressed by the large band gap, the side-jump contribution is comparable to the intrinsic one with opposite sign in the presence of scalar and magnetic scattering. Intervalley scattering tends to suppress the side-jump contribution due to the loss of coherence. By tuning the ratio of intra- to intervalley scattering, the spin Hall conductivity shows a sign change in hole-doped samples. Multiband effect in other doping regime is considered, and it is found that the sign change exists in the heavily hole-doped regime, but not in the electron-doped regime.
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Submitted 19 September, 2013; v1 submitted 24 May, 2013;
originally announced May 2013.
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Spin-orbit scattering in quantum diffusion of massive Dirac fermions
Authors:
Wen-Yu Shan,
Hai-Zhou Lu,
Shun-Qing Shen
Abstract:
Effect of spin-orbit scattering on quantum diffusive transport of two-dimensional massive Dirac fermions is studied by the diagrammatic technique. The quantum diffusion of massive Dirac fermions can be viewed as a singlet Cooperon in the massless limit and a triplet Cooperon in the large-mass limit. The spin-orbit scattering behaves like random magnetic fields only to the triplet Cooperon, and sup…
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Effect of spin-orbit scattering on quantum diffusive transport of two-dimensional massive Dirac fermions is studied by the diagrammatic technique. The quantum diffusion of massive Dirac fermions can be viewed as a singlet Cooperon in the massless limit and a triplet Cooperon in the large-mass limit. The spin-orbit scattering behaves like random magnetic fields only to the triplet Cooperon, and suppresses the weak localization of Dirac fermions in the large-mass regime. This behavior suggests an experiment to detect the weak localization of bulk subbands in topological insulator thin films, in which a narrowing of the cusp of the negative magnetoconductivity is expected after doping heavy-element impurities. Finally, a detailed comparison between the conventional two-dimensional electrons and Dirac fermions is presented for impurities of orthogonal, symplectic, and unitary symmetries.
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Submitted 22 March, 2012;
originally announced March 2012.
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Z2 invariant protected bound states in topological insulators
Authors:
Wen-Yu Shan,
Jie Lu,
Hai-Zhou Lu,
Shun-Qing Shen
Abstract:
We present an exact solution of a modifed Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies may induce bound states in the band gap of topological insulators. They arise due to the Z_2 classification of time-reversal invariant insulators, thus are also topologically-protected like the edge states in the quantum spin Hall effect and the surf…
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We present an exact solution of a modifed Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies may induce bound states in the band gap of topological insulators. They arise due to the Z_2 classification of time-reversal invariant insulators, thus are also topologically-protected like the edge states in the quantum spin Hall effect and the surface states in three-dimensional topological insulators. Coexistence of the in-gap bound states and the edge or surface states in topological insulators suggests that imperfections may affect transport properties of topological insulators via additional bound states near the system boundary.
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Submitted 7 October, 2010; v1 submitted 4 October, 2010;
originally announced October 2010.
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Topological insulator and the Dirac equation
Authors:
Shun-Qing Shen,
Wen-Yu Shan,
Hai-Zhou Lu
Abstract:
We present a general description of topological insulators from the point of view of Dirac equations. The Z_{2} index for the Dirac equation is always zero, and thus the Dirac equation is topologically trivial. After the quadratic B term in momentum is introduced to correct the mass term m or the band gap of the Dirac equation, the Z_{2} index is modified as 1 for mB>0 and 0 for mB<0. For a fixed…
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We present a general description of topological insulators from the point of view of Dirac equations. The Z_{2} index for the Dirac equation is always zero, and thus the Dirac equation is topologically trivial. After the quadratic B term in momentum is introduced to correct the mass term m or the band gap of the Dirac equation, the Z_{2} index is modified as 1 for mB>0 and 0 for mB<0. For a fixed B there exists a topological quantum phase transition from a topologically trivial system to a non-trivial one system when the sign of mass m changes. A series of solutions near the boundary in the modified Dirac equation are obtained, which is characteristic of topological insulator. From the solutions of the bound states and the Z_{2} index we establish a relation between the Dirac equation and topological insulators.
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Submitted 18 June, 2012; v1 submitted 28 September, 2010;
originally announced September 2010.
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Surface and Edge States in Topological Semi-metals
Authors:
Rui-Lin Chu,
Wen-Yu Shan,
Jie Lu,
Shun-Qing Shen
Abstract:
We study the topologically non-trivial semi-metals by means of the 6-band Kane model. Existence of surface states is explicitly demonstrated by calculating the LDOS on the material surface. In the strain free condition, surface states are divided into two parts in the energy spectrum, one part is in the direct gap, the other part including the crossing point of surface state Dirac cone is submerge…
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We study the topologically non-trivial semi-metals by means of the 6-band Kane model. Existence of surface states is explicitly demonstrated by calculating the LDOS on the material surface. In the strain free condition, surface states are divided into two parts in the energy spectrum, one part is in the direct gap, the other part including the crossing point of surface state Dirac cone is submerged in the valence band. We also show how uni-axial strain induces an insulating band gap and raises the crossing point from the valence band into the band gap, making the system a true topological insulator. We predict existence of helical edge states and spin Hall effect in the thin film topological semi-metals, which could be tested with future experiment. Disorder is found to significantly enhance the spin Hall effect in the valence band of the thin films.
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Submitted 14 January, 2011; v1 submitted 22 September, 2010;
originally announced September 2010.
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Effective continuous model for surface states and thin films of three dimensional topological insulators
Authors:
Wen-Yu Shan,
Hai-Zhou Lu,
Shun-Qing Shen
Abstract:
Two-dimensional effective continuous models are derived for the surface states and thin films of the three-dimensional topological insulator (3DTI). Starting from an effective model for 3DTI based on the first principles calculation [Zhang \emph{et al}, Nat. Phys. 5, 438 (2009)], we present solutions for both the surface states in a semi-infinite boundary condition and in the thin film with fini…
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Two-dimensional effective continuous models are derived for the surface states and thin films of the three-dimensional topological insulator (3DTI). Starting from an effective model for 3DTI based on the first principles calculation [Zhang \emph{et al}, Nat. Phys. 5, 438 (2009)], we present solutions for both the surface states in a semi-infinite boundary condition and in the thin film with finite thickness. An effective continuous model was derived for surface states and the thin film 3DTI. The coupling between opposite topological surfaces and structure inversion asymmetry (SIA) give rise to gapped Dirac hyperbolas with Rashba-like splittings in energy spectrum. Besides, the SIA leads to asymmetric distributions of wavefunctions along the film growth direction, making some branches in the energy spectra much harder than others to be probed by light. These features agree well with the recent angle-resolved photoemission spectra of Bi$_{2}$Se $_{3}$ films grown on SiC substrate [Zhang et al, arXiv: 0911.3706]. More importantly, we use the effective model to fit the experimental data and determine the model parameters. The result indicates that the thin film Bi$_{2}$Se$_{3}$ lies in quantum spin Hall region based on the calculation of the Chern number and the $Z_{2}$ invariant. In addition, strong SIA always intends to destroy the quantum spin Hall state.
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Submitted 19 March, 2010; v1 submitted 4 January, 2010;
originally announced January 2010.
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Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
Authors:
Yi Zhang,
Ke He,
Cui-Zu Chang,
Can-Li Song,
Lili Wang,
Xi Chen,
Jinfeng Jia,
Zhong Fang,
Xi Dai,
Wen-Yu Shan,
Shun-Qing Shen,
Qian Niu,
Xiaoliang Qi,
Shou-Cheng Zhang,
Xucun Ma,
Qi-Kun Xue
Abstract:
Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work, thickness dependent band structure of molecular beam epitaxy grown ultrathin films of Bi2Se3 is investigated by in situ angle-resolved photoemission spectroscopy. An…
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Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work, thickness dependent band structure of molecular beam epitaxy grown ultrathin films of Bi2Se3 is investigated by in situ angle-resolved photoemission spectroscopy. An energy gap is observed for the first time in the topologically protected metallic surface states of bulk Bi2Se3 below the thickness of six quintuple layers, due to the coupling between the surface states from two opposite surfaces of the Bi2Se3 film. The gapped surface states exhibit sizable Rashba-type spin-orbit splitting, due to breaking of structural inversion symmetry induced by SiC substrate. The spin-splitting can be controlled by tuning the potential difference between the two surfaces.
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Submitted 10 August, 2010; v1 submitted 19 November, 2009;
originally announced November 2009.
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Massive Dirac fermions and spin physics in an ultrathin film of topological insulator
Authors:
Hai-Zhou Lu,
Wen-Yu Shan,
Wang Yao,
Qian Niu,
Shun-Qing Shen
Abstract:
We study transport and optical properties of the surface states which lie in the bulk energy gap of a thin-film topological insulator. When the film thickness is comparable with the surface state decay length into the bulk, the tunneling between the top and bottom surfaces opens an energy gap and form two degenerate massive Dirac hyperbolas. Spin dependent physics emerges in the surface bands wh…
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We study transport and optical properties of the surface states which lie in the bulk energy gap of a thin-film topological insulator. When the film thickness is comparable with the surface state decay length into the bulk, the tunneling between the top and bottom surfaces opens an energy gap and form two degenerate massive Dirac hyperbolas. Spin dependent physics emerges in the surface bands which are vastly different from the bulk behavior. These include the surface spin Hall effects, spin dependent orbital magnetic moment, and spin dependent optical transition selection rule which allows optical spin injection. We show a topological quantum phase transition where the Chern number of the surface bands changes when varying the thickness of the thin film.
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Submitted 10 February, 2010; v1 submitted 21 August, 2009;
originally announced August 2009.
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A Quantum Spin Hall Round Disk as a Spin Rotator and Filter
Authors:
Zhan-Feng Jiang,
Wen-Yu Shan
Abstract:
We study theoretically the spin transport of a Quantum Spin Hall round disk. When an electron traverses the disk in virtue of the edge states, its spin's in-plane component can be rotated by a magnetic flux through the disk. The spin rotation occurs due to the interference of two helical edge states with opposite spins, which is regarded as the Aharonov-Bohm effect in the spin space and a manife…
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We study theoretically the spin transport of a Quantum Spin Hall round disk. When an electron traverses the disk in virtue of the edge states, its spin's in-plane component can be rotated by a magnetic flux through the disk. The spin rotation occurs due to the interference of two helical edge states with opposite spins, which is regarded as the Aharonov-Bohm effect in the spin space and a manifestation of the Berry phase. Besides, the disk has a spin filter effect on the tunneling current when we apply an appropriate magnetic field and gate voltage on it. The spin polarization ratio can reach 100% when the couplings between the disk and leads are weak.
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Submitted 6 August, 2009;
originally announced August 2009.
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Effect of Native Defects on Optical Properties of InxGa1-xN Alloys
Authors:
S. X. Li,
E. E. Haller,
K. M. Yu,
W. Walukiewicz,
J. W. Ager III,
J. Wu,
W. Shan,
Hai Lu,
William J. Schaff
Abstract:
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optic…
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The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model.
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Submitted 4 August, 2005;
originally announced August 2005.
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Diluted II-VI Oxide Semiconductors with Multiple Band Gaps
Authors:
K. M. Yu,
W. Walukiewicz,
J. Wu,
W. Shan,
J. W. Beeman,
M. A. Scarpulla,
O. D. Dubon,
P. Becla
Abstract:
We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. When only 1.…
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We report the realization of a new multi-band-gap semiconductor. The highly mismatched alloy Zn1-yMnyOxTe1-x has been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. When only 1.3% of Te atoms is replaced with oxygen in a Zn0.88Mn0.12Te crystal (with band gap of 2.32 eV) the resulting band structure consists of two direct band gaps with interband transitions at ~1.77 eV and 2.7 eV. This remarkable modification of the band structure is well described by the band anticrossing model in which the interactions between the oxygen-derived band and the conduction band are considered. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.
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Submitted 19 September, 2003;
originally announced September 2003.
