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In-Situ Growth and Ionic Switching Behavior of Single-Crystalline Silver Iodide Nanoflakes
Authors:
Amir Parsi,
Abdulsalam Aji Suleiman,
Doruk Pehlivanoğlu,
Hafiz Muhammad Shakir,
Emine Yeğin,
T. Serkan Kasırga
Abstract:
Silver iodide (AgI) is a prototypical superionic conductor, undergoing a first-order phase transition at 147 Celsius that enables rapid ionic transport through its lattice, making it attractive for solid-state ionic devices. However, due to the presence of mobile Ag ions, controlled chemical vapor deposition (CVD) synthesis of high-quality AgI single crystals has remained largely unexplored. Here,…
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Silver iodide (AgI) is a prototypical superionic conductor, undergoing a first-order phase transition at 147 Celsius that enables rapid ionic transport through its lattice, making it attractive for solid-state ionic devices. However, due to the presence of mobile Ag ions, controlled chemical vapor deposition (CVD) synthesis of high-quality AgI single crystals has remained largely unexplored. Here, we present the controllable synthesis of thin, single-crystalline β-AgI nanoflakes using a home-built CVD setup with real-time optical observation capability, offering insights into their nucleation and growth dynamics. We evaluate the material's environmental stability through temperature-dependent photodegradation and Ag nanoparticle formation induced by electron beam irradiation. Electrical measurements on two-terminal devices with silver contacts demonstrate a remarkable six-order-of-magnitude resistance drop in lateral configurations at elevated temperatures, indicative of switchable ionic conductivity. Additionally, vertical device architectures exhibit clear memristive (resistive switching) characteristics, likely due to the formation of conductive filaments. Our work addresses the key synthesis challenges and highlights the unique electrical properties of thin AgI single crystals, suggesting its potential for innovative devices in unconventional computing, data storage, and advanced neuromorphic systems.
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Submitted 2 May, 2025;
originally announced May 2025.
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Photoluminescence enhancement at the vertical van der Waals semiconductor-metal heterostructures
Authors:
Hafiz Muhammad Shakir,
Abdulsalam Aji Suleiman,
Kübra Nur Kalkan,
Amir Parsi,
Uğur Başçı,
Mehmet Atıf Durmuş,
Ahmet Osman Ölçer,
Hilal Korkut,
Cem Sevik,
İbrahim Sarpkaya,
Talip Serkan Kasırga
Abstract:
Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical doping, and plasmonic engineering can in…
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Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical doping, and plasmonic engineering can inhibit nonradiative decay channels and enhance PL. Here, we show a more straightforward approach that allows PL enhancement. An engineered vertical van der Waals (vdW) metal-monolayer semiconductor junction (MSJ) results in PL enhancement of more than an order of magnitude at technologically relevant excitation powers. Such MSJ can be constructed by vertically stacking metals with suitable work function either above or below a monolayer semiconducting TMDC. Our experiments reveal that the underlying PL enhancement mechanism is to be the suppressed exciton quenching due to the absence of metal-induced gap states and weak Fermi level pinning, thanks to the vdW gapped interface between the metal and the TMDC. Our time-resolved PL measurements further indicate that reduced exciton-exciton annihilation, even at high generation rates, contributes to the observed PL enhancement. The PL intensity is further increased by the proximity of surface plasmons in the metal with the TMDC layer. Our findings shed light on the interaction at vdW metal-semiconductor interfaces and offer a path to improving the optoelectronic performance of semiconducting TMDCs.
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Submitted 31 May, 2024;
originally announced May 2024.
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High Current Density Vertical Tunneling Transistors from Graphene/Highly-Doped Silicon Heterostructures
Authors:
Yuan Liu,
Jiming Sheng,
Hao Wu,
Qiyuan He,
Hung-Chieh Cheng,
Muhammad Imran Shakir,
Yu Huang,
Xiangfeng Duan
Abstract:
Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus on junctions between graphene and lightly-doped silicon, where a Schottky barrier is believed to dominate the carrier transport process. Here we report a system…
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Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus on junctions between graphene and lightly-doped silicon, where a Schottky barrier is believed to dominate the carrier transport process. Here we report a systematic investigation of carrier transport across the heterojunctions formed between graphene and highly-doped silicon. By varying the silicon doping level and the measurement temperature, we show that the carrier transport across the graphene/p++-Si heterojunction is dominated by tunneling effect through the native oxide. We further demonstrate that the tunneling current can be effectively modulated by the external gate electrical field, resulting in a vertical tunneling transistor. Benefited from the large density of states of highly doped silicon, our tunneling transistors can deliver a current density over 20 A/cm2, about two orders of magnitude higher than previous graphene/insulator/graphene tunneling transistor at the same on/off ratio.
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Submitted 28 December, 2015;
originally announced December 2015.
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Remarkable enhancement in crystalline perfection, Second Harmonic Generation Efficiency, Optical Transparency and laser damage threshold in KDP crystals by L-threonine doping
Authors:
S. K. Kushwaha,
Mohd. Shakir,
K. K. Maurya,
A. L. Shah,
M. A. Wahab,
G. Bhagavannarayana
Abstract:
Effect of L-threonine (LT) doping on crystalline perfection, second harmonic generation (SHG) efficiency, optical transparency and laser damage threshold (LDT) in potassium dihydrogen phosphate (KDP) crystals grown by slow evaporation solution technique (SEST) has been investigated. The influence of doping on growth rate and morphology of the grown crystals has also been studied. Powder X-ray diff…
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Effect of L-threonine (LT) doping on crystalline perfection, second harmonic generation (SHG) efficiency, optical transparency and laser damage threshold (LDT) in potassium dihydrogen phosphate (KDP) crystals grown by slow evaporation solution technique (SEST) has been investigated. The influence of doping on growth rate and morphology of the grown crystals has also been studied. Powder X-ray diffraction data confirms the crystal structure of KDP and shows a systematic variation in intensity of diffraction peaks in correlation with morphology due to varying LT concentration. No extra phase formation was observed which is further confirmed by Fourier Transform (FT) Raman studies. High-resolution X-ray diffraction curves indicate that crystalline perfection has been improved to a great extent at low concentrations with a maximum perfection at 1 mol% doping. At higher concentrations (5 to 10 mol%), it is slightly reduced due to excess incorporation of dopants at the interstitial sites of the crystalline matrix. LDT has been increased considerably with increase in doping concentration, whereas SHG efficiency was found to be maximum at 1 mol% in correlation with crystalline. The optical transparency for doped crystals has been increased as compared to that of pure KDP with a maximum value at 1 mol% doping.
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Submitted 19 March, 2014;
originally announced March 2014.
