In-Situ Growth and Ionic Switching Behavior of Single-Crystalline Silver Iodide Nanoflakes
Authors:
Amir Parsi,
Abdulsalam Aji Suleiman,
Doruk Pehlivanoğlu,
Hafiz Muhammad Shakir,
Emine Yeğin,
T. Serkan Kasırga
Abstract:
Silver iodide (AgI) is a prototypical superionic conductor, undergoing a first-order phase transition at 147 Celsius that enables rapid ionic transport through its lattice, making it attractive for solid-state ionic devices. However, due to the presence of mobile Ag ions, controlled chemical vapor deposition (CVD) synthesis of high-quality AgI single crystals has remained largely unexplored. Here,…
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Silver iodide (AgI) is a prototypical superionic conductor, undergoing a first-order phase transition at 147 Celsius that enables rapid ionic transport through its lattice, making it attractive for solid-state ionic devices. However, due to the presence of mobile Ag ions, controlled chemical vapor deposition (CVD) synthesis of high-quality AgI single crystals has remained largely unexplored. Here, we present the controllable synthesis of thin, single-crystalline β-AgI nanoflakes using a home-built CVD setup with real-time optical observation capability, offering insights into their nucleation and growth dynamics. We evaluate the material's environmental stability through temperature-dependent photodegradation and Ag nanoparticle formation induced by electron beam irradiation. Electrical measurements on two-terminal devices with silver contacts demonstrate a remarkable six-order-of-magnitude resistance drop in lateral configurations at elevated temperatures, indicative of switchable ionic conductivity. Additionally, vertical device architectures exhibit clear memristive (resistive switching) characteristics, likely due to the formation of conductive filaments. Our work addresses the key synthesis challenges and highlights the unique electrical properties of thin AgI single crystals, suggesting its potential for innovative devices in unconventional computing, data storage, and advanced neuromorphic systems.
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Submitted 2 May, 2025;
originally announced May 2025.
Photoluminescence enhancement at the vertical van der Waals semiconductor-metal heterostructures
Authors:
Hafiz Muhammad Shakir,
Abdulsalam Aji Suleiman,
Kübra Nur Kalkan,
Amir Parsi,
Uğur Başçı,
Mehmet Atıf Durmuş,
Ahmet Osman Ölçer,
Hilal Korkut,
Cem Sevik,
İbrahim Sarpkaya,
Talip Serkan Kasırga
Abstract:
Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical doping, and plasmonic engineering can in…
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Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical doping, and plasmonic engineering can inhibit nonradiative decay channels and enhance PL. Here, we show a more straightforward approach that allows PL enhancement. An engineered vertical van der Waals (vdW) metal-monolayer semiconductor junction (MSJ) results in PL enhancement of more than an order of magnitude at technologically relevant excitation powers. Such MSJ can be constructed by vertically stacking metals with suitable work function either above or below a monolayer semiconducting TMDC. Our experiments reveal that the underlying PL enhancement mechanism is to be the suppressed exciton quenching due to the absence of metal-induced gap states and weak Fermi level pinning, thanks to the vdW gapped interface between the metal and the TMDC. Our time-resolved PL measurements further indicate that reduced exciton-exciton annihilation, even at high generation rates, contributes to the observed PL enhancement. The PL intensity is further increased by the proximity of surface plasmons in the metal with the TMDC layer. Our findings shed light on the interaction at vdW metal-semiconductor interfaces and offer a path to improving the optoelectronic performance of semiconducting TMDCs.
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Submitted 31 May, 2024;
originally announced May 2024.
