First-Principles Calculation of Spin-Relaxation Due to Alloy and Electron-Phonon Scattering in Strained GeSn
Authors:
Kevin Sewell,
Felipe Murphy-Armando
Abstract:
GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a direct band gap with increasing Sn content, which enhances optical properties, electron transport and we find also affects spin transport behaviour, which is cri…
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GeSn has emerged as a promising material for spintronics due to its long spin-lifetime, compatibility with silicon technology, high mobility and tunable electronic properties. Of particular interest is the transition from an indirect to a direct band gap with increasing Sn content, which enhances optical properties, electron transport and we find also affects spin transport behaviour, which is critical for spintronics applications. We use first-principles electronic-structure theory to determine the spin-flip electron-alloy scattering parameters in n-type GeSn alloys. We also calculate the previously undetermined intervalley electron spin-phonon scattering parameters between the $L$ and $Γ$ valleys. These parameters are used to determine the electron-alloy and electron-phonon scattering contributions to the n-type spin-relaxation of GeSn, as a function of alloy content and temperature. As in the case of phonon scattering, alloy scattering reduces the spin-relaxation time. However, switching the spin transport from the typical $L$ valley of Ge to the $Γ$ valley by sufficient addition of Sn, the relaxation time can be substantially increased. For unstrained, room temperature GeSn, we find a Sn concentration of at least $10\%$ is required to achieve a spin-relaxation time greater than Ge, with $17\%$ Sn needed to increase the spin-relaxation time from the nanosecond range to the microsecond range. At low temperatures (30K), adding $10\%$ Sn can increase the spin-relaxation time from $10^{-7}$s to 0.1s. Applying biaxial tensile strain to GeSn further increases the spin-relaxation time and at a lower Sn content than in unstrained GeSn.
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Submitted 15 May, 2025;
originally announced May 2025.
First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn
Authors:
Kevin Sewell,
Felipe Murphy-Armando
Abstract:
We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type electron mobility of GeSn at $300K$ and $15K$ using a first iteration of the Boltzmann transport equation in the relaxation time approximation. For unstrained…
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We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type electron mobility of GeSn at $300K$ and $15K$ using a first iteration of the Boltzmann transport equation in the relaxation time approximation. For unstrained GeSn, we find that a Sn concentration of at least $13.5\%$ is needed to achieve an electron mobility greater than that of Ge. Our results show that the mobility of GeSn can be over $25$ times higher than the mobility of Ge, or $10^5$ cm$^2$/(Vs). At $15K$, less than $6\%$ Sn incorporation into Ge quadruples its mobility, which suggests GeSn has potential applications as a high mobility 2D electron gas. Applying biaxial tensile strain to GeSn further increases the mobility and at a lower Sn content than in unstrained GeSn.
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Submitted 18 October, 2024;
originally announced October 2024.
