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Machine-Learning Interatomic Potential for Twisted Hexagonal Boron Nitride: Accurate Structural Relaxation and Emergent Polarization
Authors:
Wilson Nieto Luna,
Robin Smeyers,
Cem Sevik,
Lucian Covaci,
Milorad V. Milošević
Abstract:
The emerging ferroelectric properties of two-dimensional (2D) heterostructures are at the forefront of science and prospective technology. In moiré bilayers, twisting or heterostructuring causes local atomic reconstruction, which even at picometer scale, can lead to pronounced ferroelectric polarization. Accurately determining this reconstruction utilizing ab initio methods is unfeasible for the r…
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The emerging ferroelectric properties of two-dimensional (2D) heterostructures are at the forefront of science and prospective technology. In moiré bilayers, twisting or heterostructuring causes local atomic reconstruction, which even at picometer scale, can lead to pronounced ferroelectric polarization. Accurately determining this reconstruction utilizing ab initio methods is unfeasible for the relevant system sizes, but modern machine-learning interatomic potentials offer a viable solution. Here, we present the Gaussian Approximation Potential for twisted hexagonal boron nitride (hBN) layers validated against ab initio datasets. This approach enables the precise analysis of their structural properties, which is particularly relevant at small twist angles. We couple the structural information to a tight-binding model based on accurate interatomic positioning, and determine the twist-dependent polarization, yielding results that closely align with previous experimental findings - even at room temperature. This methodology enables further studies that are unattainable otherwise and is transferable to other 2D materials of interest.
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Submitted 14 March, 2025;
originally announced March 2025.
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State- and momentum-dependent nonlinear Stark effect of interlayer excitons in bilayer WSe$_2$
Authors:
Cem Sevik,
Engin Torun,
Milorad V. Milosevic,
Fulvio Paleari
Abstract:
Interlayer excitons in van der Waals heterostructures offer rich collective phases, prospective optoelectronic applications, and versatile tunability, where control by electronic means is particularly relevant and practical. Here, in the case of bilayer WSe$_2$, we reveal how layer localization of excitons governs their response to an external electric field. Using Many-Body Perturbation Theory, w…
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Interlayer excitons in van der Waals heterostructures offer rich collective phases, prospective optoelectronic applications, and versatile tunability, where control by electronic means is particularly relevant and practical. Here, in the case of bilayer WSe$_2$, we reveal how layer localization of excitons governs their response to an external electric field. Using Many-Body Perturbation Theory, we calculate the exciton dispersion for different stacking symmetries under applied electric field and/or strain, in order to map the landscape of competing low-energy excitons in four distinct finite-momentum valleys. While intralayer excitons are not affected by the electric field, some interlayer ones exhibit a nonlinear Stark shift that becomes linear after a critical threshold. The degree of nonlinearity is a direct measure of the layer hybridization of the electronic subcomponents of the exciton. Our findings explain the peculiar Stark-shift regimes observed in recent experiments, the nature of (anti)symmetric spectral shifts around zero field, and the sensitivity of dipolar excitons to external perturbations, all highly relevant to their further applications in excitonic condensates, optoelectronics devices and quantum emitters.
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Submitted 19 February, 2025;
originally announced February 2025.
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Theory of a two-dimensional anharmonic piezoelectric crystal resonator
Authors:
Karl H. Michel,
Cem Sevik,
Milorad V. Milosevic
Abstract:
We developed a lattice dynamical theory of an atomically-thin compressional piezoelectric resonator. Acoustic and optical dynamic displacement response functions are derived and account for frequency-dependent electromechanical coupling. The dynamic susceptibilities for the direct and the converse piezoelectric effects are found equal. The mechanical resonant behavior of longitudinal in-plane disp…
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We developed a lattice dynamical theory of an atomically-thin compressional piezoelectric resonator. Acoustic and optical dynamic displacement response functions are derived and account for frequency-dependent electromechanical coupling. The dynamic susceptibilities for the direct and the converse piezoelectric effects are found equal. The mechanical resonant behavior of longitudinal in-plane displacement waves is investigated as a function of the lateral crystal size and of temperature in the classical and in the quantum regime. In the former case the quality factor of the resonator is inversely proportional to temperature and to crystal size. Below a cross-over temperature the quantum zero-point fluctuations become dominant and put an upper limit on the quality factor which is size independent. As experimentally relevant examples, the theory is applied on two-dimensional hexagonal boron nitride and molybdenum disulfide.
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Submitted 4 October, 2024;
originally announced October 2024.
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Enhanced superconductivity of hydrogenated $β_{12}$ borophene
Authors:
Božidar N. Šoškić,
Jonas Bekaert,
Cem Sevik,
Milorad V. Milošević
Abstract:
Borophene stands out among elemental two-dimensional materials due to its extraordinary physical properties, including structural polymorphism, strong anisotropy, metallicity, and the potential for phonon-mediated superconductivity. However, confirming superconductivity in borophene experimentally has been evasive to date, mainly due to the detrimental effects of metallic substrates and its suscep…
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Borophene stands out among elemental two-dimensional materials due to its extraordinary physical properties, including structural polymorphism, strong anisotropy, metallicity, and the potential for phonon-mediated superconductivity. However, confirming superconductivity in borophene experimentally has been evasive to date, mainly due to the detrimental effects of metallic substrates and its susceptibility to oxidation. In this study, we present an \textit{ab initio} analysis of superconductivity in the experimentally synthesized hydrogenated $β_{12}$ borophene, which has been proven to be less prone to oxidation. Our findings demonstrate that hydrogenation significantly enhances both the stability and superconducting properties of $β_{12}$ borophene. Furthermore, we reveal that tensile strain and hole doping, achievable through various experimental methods, significantly enhance the critical temperature, reaching up to 29 K. These findings not only promote further fundamental research on superconducting borophene and its heterostructures, but also position hydrogenated borophene as a versatile platform for low-dimensional superconducting electronics.
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Submitted 9 August, 2024;
originally announced August 2024.
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Strain-tunable magnetic and magnonic states in Ni-dihalide monolayers
Authors:
Ali Ghojavand,
Maarten Soenen,
Nafise Rezaei,
Mojtaba Alaei,
Cem Sevik,
Milorad V. Milošević
Abstract:
Monolayer NiI$_2$ garners large research interest due to its multiferroic behavior stemming from the interplay between its non-collinear magnetic order and the spin-orbit coupling. This prompts an investigation into the stability of the magnetic order in NiI$_2$ and similar materials under external stimuli. In this work, we report the effect of biaxial and uniaxial strain on the magnetic ground st…
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Monolayer NiI$_2$ garners large research interest due to its multiferroic behavior stemming from the interplay between its non-collinear magnetic order and the spin-orbit coupling. This prompts an investigation into the stability of the magnetic order in NiI$_2$ and similar materials under external stimuli. In this work, we report the effect of biaxial and uniaxial strain on the magnetic ground state, the critical temperature, and the magnonic properties of the NiX$_2$ (X = I, Br, Cl) monolayers. For all three materials, we reveal intricate strain-dependent phase diagrams, including ferromagnetic, helimagnetic, and skyrmionic phases. Moreover, we discuss the necessity of considering the biquadratic exchange interaction in the latter analysis. We reveal that the biquadratic exchange significantly alters both the magnetic ground state and the critical temperature of the magnetic order, and we demonstrate that its importance becomes even more explicit when monolayer Ni-dihalides are strained. Finally, we calculate the magnonic dispersion for the predicted magnetic states, showing that the skyrmionic phase functions as a magnonic crystal, and demonstrate the presence of strain-tunable soft magnon modes at finite wavevectors in the helimagnetic phase.
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Submitted 14 November, 2024; v1 submitted 29 July, 2024;
originally announced July 2024.
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Photoluminescence enhancement at the vertical van der Waals semiconductor-metal heterostructures
Authors:
Hafiz Muhammad Shakir,
Abdulsalam Aji Suleiman,
Kübra Nur Kalkan,
Amir Parsi,
Uğur Başçı,
Mehmet Atıf Durmuş,
Ahmet Osman Ölçer,
Hilal Korkut,
Cem Sevik,
İbrahim Sarpkaya,
Talip Serkan Kasırga
Abstract:
Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical doping, and plasmonic engineering can in…
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Excitons in monolayer transition metal dichalcogenides (TMDCs) offer intriguing new possibilities for optoelectronics with no analogues in bulk semiconductors. Yet, intrinsic defects in TMDCs limit the radiative exciton recombination pathways. As a result, the photoluminescence (PL) quantum yield (QY) is limited. Methods like superacid treatment, electrical doping, and plasmonic engineering can inhibit nonradiative decay channels and enhance PL. Here, we show a more straightforward approach that allows PL enhancement. An engineered vertical van der Waals (vdW) metal-monolayer semiconductor junction (MSJ) results in PL enhancement of more than an order of magnitude at technologically relevant excitation powers. Such MSJ can be constructed by vertically stacking metals with suitable work function either above or below a monolayer semiconducting TMDC. Our experiments reveal that the underlying PL enhancement mechanism is to be the suppressed exciton quenching due to the absence of metal-induced gap states and weak Fermi level pinning, thanks to the vdW gapped interface between the metal and the TMDC. Our time-resolved PL measurements further indicate that reduced exciton-exciton annihilation, even at high generation rates, contributes to the observed PL enhancement. The PL intensity is further increased by the proximity of surface plasmons in the metal with the TMDC layer. Our findings shed light on the interaction at vdW metal-semiconductor interfaces and offer a path to improving the optoelectronic performance of semiconducting TMDCs.
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Submitted 31 May, 2024;
originally announced May 2024.
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First-principles exploration of superconductivity in intercalated bilayer borophene phases
Authors:
Božidar N. Šoškić,
Jonas Bekaert,
Cem Sevik,
Željko Šljivančanin,
Milorad V. Milošević
Abstract:
We explore the emergence of phonon-mediated superconductivity in bilayer borophenes by controlled intercalation with elements from the groups of alkali, alkaline-earth, and transition metals, using systematic first-principles and Eliashberg calculations. We show that the superconducting properties are primarily governed by the interplay between the out-of-plane ($p_{z}$) boron states and the parti…
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We explore the emergence of phonon-mediated superconductivity in bilayer borophenes by controlled intercalation with elements from the groups of alkali, alkaline-earth, and transition metals, using systematic first-principles and Eliashberg calculations. We show that the superconducting properties are primarily governed by the interplay between the out-of-plane ($p_{z}$) boron states and the partially occupied in-plane ($s+p_{x,y}$) bonding states at the Fermi level. Our Eliashberg calculations indicate that intercalation with alkaline-earth elements leads to the highest superconducting critical temperatures ($T_{c}$). Specifically, Be in $δ_{4}$, Mg in $χ_{3}$, and Ca in the kagome bilayer borophene demonstrate superior performance with $T_{c}$ reaching up to 58~K. Our study therefore reveals that intercalated bilayer borophene phases are not only more resilient to chemical deterioration, but also harbor enhanced $T_{c}$ values compared to their monolayer counterparts, underscoring their substantial potential for the development of boron-based two-dimensional superconductors.
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Submitted 20 July, 2024; v1 submitted 12 December, 2023;
originally announced December 2023.
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Goodenough-Kanamori-Anderson high-temperature ferromagnetism in tetragonal transition-metal xenes
Authors:
U. Yorulmaz,
D. Šabani,
C. Sevik,
M. V. Milošević
Abstract:
Seminal Goodenough-Kanamori-Anderson (GKA) rules provide the inceptive understanding of the superexchange interaction of two magnetic metal ions bridged with an anion, and suggest fostered ferromagnetic interaction for orthogonal bridging bonds. However, there are no examples of two-dimensional (2D) materials with structure that optimizes the GKA arguments towards enhanced ferromagnetism and its c…
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Seminal Goodenough-Kanamori-Anderson (GKA) rules provide the inceptive understanding of the superexchange interaction of two magnetic metal ions bridged with an anion, and suggest fostered ferromagnetic interaction for orthogonal bridging bonds. However, there are no examples of two-dimensional (2D) materials with structure that optimizes the GKA arguments towards enhanced ferromagnetism and its critical temperature. Here we reveal that an ideally planar GKA ferromagnetism is indeed stable in selected tetragonal transition-metal xenes (tTMXs), with Curie temperature above 300~K found in CrC and MnC. We provide the general orbitally-resolved analysis of magnetic interactions that supports the claims and sheds light at the mechanisms dominating the magnetic exchange process in these structures. With recent advent of epitaxially-grown tetragonal 2D materials, our findings earmark tTMXs for facilitated spintronic and magnonic applications, or as a desirable magnetic constituent of functional 2D heterostructures.
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Submitted 27 September, 2023;
originally announced September 2023.
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Intrinsic control of interlayer exciton generation rate in van der Waals materials via Janus layers
Authors:
Engin Torun,
Fulvio Paleari,
Milorad V. Milosevic,
Ludger Wirtz,
Cem Sevik
Abstract:
We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation efficiency. We investigate different MoS$_2$@Janus layer combinations using first-principles methods including electron-hole interactions (excitons) and exciton-pho…
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We demonstrate the possibility of engineering the optical properties of transition metal dichalcogenide heterobilayers when one of the constitutive layers has a Janus structure. This has important consequences for the charge separation efficiency. We investigate different MoS$_2$@Janus layer combinations using first-principles methods including electron-hole interactions (excitons) and exciton-phonon coupling. The direction of the intrinsic electric field from the Janus layer modifies the electronic band alignments and, consequently, the energy separation between interlayer exciton states -- which usually have a very low oscillator strength and hence are almost dark in absorption -- and bright in-plane excitons. We find that in-plane lattice vibrations strongly couple the two states, so that exciton-phonon scattering may be a viable generation mechanism for interlayer excitons upon light absorption. In particular, in the case of MoS$_2$@WSSe, the energy separation of the low-lying interlayer exciton from the in-plane exciton is resonant with the transverse optical phonon modes (40 meV). We thus identify this heterobilayer as a prime candidate for efficient electron-hole pair generation with efficient charge carrier separation.
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Submitted 11 December, 2022;
originally announced December 2022.
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Surface termination dependence of electronic and optical properties in Ti$_2$CO$_2$ MXene monolayers
Authors:
Zafer Kandemir,
Engin Torun,
Fulvio Paleari,
Celal Yelgel,
Cem Sevik
Abstract:
Two-dimensional (2D) MXenes are a rapid growing family of 2D materials with rich physical and chemical properties where their surface termination plays an essential role. Among the various 2D MXenes, functionalization of the Ti$_{n}$C$_{n-1}$ phase with oxygen (O) atoms makes them attractive for optoelectronic applications due to their optical gap residing in the infrared or visible region. In thi…
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Two-dimensional (2D) MXenes are a rapid growing family of 2D materials with rich physical and chemical properties where their surface termination plays an essential role. Among the various 2D MXenes, functionalization of the Ti$_{n}$C$_{n-1}$ phase with oxygen (O) atoms makes them attractive for optoelectronic applications due to their optical gap residing in the infrared or visible region. In this manuscript, we theoretically investigate the electronic and optical properties of four different O-atom-functionalized Ti$_{n}$C$_{n-1}$ MXene monolayers using state-of-the-art, first-principles techniques. In particular, we calculate the quasiparticle corrections on top of density functional theory (DFT) at the GW level and the exciton-dominated optical spectra by solving the Bethe-Salpeter equation (BSE) also at finite momentum. We find that all but one of the monolayer models are indirect band gap semiconductors where quasiparticle corrections are very important ($\sim 1$ eV). The optical spectra are instead dominated by direct and indirect excitons with large binding energies (between $0.5$ and $1$ eV). Most direct excitons lie above $1.5$ eV, while the indirect ones are below: therefore, we conclude that Ti$_{n}$C$_{n-1}$ should display strong absorption in the visible region, but phonon-assisted emission in the infrared. Our work thus reveals the potential usage of surface terminations to tune the optical and electronic properties of Ti$_{n}$C$_{n-1}$ MXene monolayers, while emphasizing the pivotal role of many-body effects beyond DFT to obtain accurate prediction for these systems.
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Submitted 21 September, 2022;
originally announced September 2022.
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Superconductivity in functionalized niobium-carbide MXenes
Authors:
Cem Sevik,
Jonas Bekaert,
Milorad V. Milosevic
Abstract:
We show the effect of Cl and S functionalization on the superconducting properties of layered (bulk) and monolayer niobium carbide (Nb$_2$C) MXene crystals, based on first-principles calculations combined with Eliashberg theory. For the bulk layered Nb$_2$CCl$_2$, the calculated superconducting transition temperature ($T_c$) is in very good agreement with the recently measured value of 6 K. We sho…
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We show the effect of Cl and S functionalization on the superconducting properties of layered (bulk) and monolayer niobium carbide (Nb$_2$C) MXene crystals, based on first-principles calculations combined with Eliashberg theory. For the bulk layered Nb$_2$CCl$_2$, the calculated superconducting transition temperature ($T_c$) is in very good agreement with the recently measured value of 6 K. We show that $T_c$ is enhanced to 10 K for monolayer Nb$_2$CCl$_2$, due to an increase in the density of states at the Fermi level, and the corresponding electron-phonon coupling. We further demonstrate a feasible gate-induced enhancement of $T_c$ up to 40 K for both bulk-layered and monolayer Nb$_2$CCl$_2$ crystals. For the S-functionalized cases our calculations reveal the importance of phonon softening in understanding their superconducting properties. Finally, we predict that Nb$_3$C$_2$S$_2$ in bulk-layered and monolayer form is potentially superconducting, with a $T_c$ around 30 K. Considering that Nb$_2$C is not superconducting in pristine form, our findings promote functionalization as a pathway towards robust superconductivity in MXenes.
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Submitted 29 August, 2022;
originally announced August 2022.
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Enhancing superconductivity in MXenes through hydrogenation
Authors:
Jonas Bekaert,
Cem Sevik,
Milorad V. Milosevic
Abstract:
Two-dimensional transition metal carbides and nitrides (MXenes) are an emerging class of atomically-thin superconductors, whose characteristics are highly prone to tailoring by surface functionalization. Here we explore the use of hydrogen adatoms to enhance phonon-mediated superconductivity in MXenes, based on first-principles calculations combined with Eliashberg theory. We first demonstrate the…
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Two-dimensional transition metal carbides and nitrides (MXenes) are an emerging class of atomically-thin superconductors, whose characteristics are highly prone to tailoring by surface functionalization. Here we explore the use of hydrogen adatoms to enhance phonon-mediated superconductivity in MXenes, based on first-principles calculations combined with Eliashberg theory. We first demonstrate the stability of three different structural models of hydrogenated Mo- and W-based MXenes. Particularly high critical temperatures of over 30 K are obtained for hydrogenated Mo$_2$N and W$_2$N. Several mechanisms responsible for the enhanced electron-phonon coupling are uncovered, namely (i) hydrogen-induced changes in the phonon spectrum of the host MXene, (ii) emerging hydrogen-based phonon modes, and (iii) charge transfer from hydrogen to the MXene layer, boosting the density of states at the Fermi level. Finally, we demonstrate that hydrogen adatoms are moreover able to induce superconductivity in MXenes that are not superconducting in pristine form, such as Nb$_2$C.
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Submitted 8 April, 2022;
originally announced April 2022.
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High-temperature multigap superconductivity in two-dimensional metal-borides
Authors:
Cem Sevik,
Mikhail Petrov,
Jonas Bekaert,
Milorad V. Milošević
Abstract:
Using first-principles calculations in combination with the Eliashberg formalism, we systematically investigated phonon-mediated superconductivity in two-dimensional (2D) metal-boride crystals, consisting of a boron honeycomb network doped by diverse metal elements. Such 2D metal-boride compounds, named MBenes, are chemically exfoliable from single-crystalline layered ternary borides (MAB phases).…
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Using first-principles calculations in combination with the Eliashberg formalism, we systematically investigated phonon-mediated superconductivity in two-dimensional (2D) metal-boride crystals, consisting of a boron honeycomb network doped by diverse metal elements. Such 2D metal-boride compounds, named MBenes, are chemically exfoliable from single-crystalline layered ternary borides (MAB phases). First, we identified the MBene layers with potential for superconductivity via isotropic Eliashberg calculations, considering a wide range of metal elements, with focus on alkaline earth and transition metals. Subsequently, we performed a detailed analysis of the prominent superconducting MBenes by solving the anisotropic Eliashberg equations. The obtained high critical temperatures (up to 72 K), as well as the rich multigap superconducting behavior, recommend these crystals for further use in multifunctional 2D heterostructures and superconducting device applications.
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Submitted 8 December, 2021;
originally announced December 2021.
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Hot electron relaxation in normal state of iron pnictides: memory function approach
Authors:
Luxmi Rani,
Cem Sevik
Abstract:
This study leads to the investigation of the non-equilibrium electron relaxation in the normal state of iron pnictides. Here we consider the relaxation of electrons due to their coupling with magnons and phonons in the metallic state of iron pnictides using the memory function approach. In the present model, electrons live at a higher temperature than that of the phonon and magnon baths, mimicking…
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This study leads to the investigation of the non-equilibrium electron relaxation in the normal state of iron pnictides. Here we consider the relaxation of electrons due to their coupling with magnons and phonons in the metallic state of iron pnictides using the memory function approach. In the present model, electrons live at a higher temperature than that of the phonon and magnon baths, mimicking a non-equilibrium steady state situation. Further we analyze theoretically the generalized Drude scattering rate within the framework of Two Temperature Model and study the full frequency and temperature behavior for it. In zero frequency regime, the rate of electron-magnon scattering and electron-phonon scattering shows a linear temperature dependence at higher temperature values greater than Bloch-Grüneisen temperature. Whereas at lower temperature values, $T\llΘ_{BG}$, corresponding scattering rates follow the temperature behavior as ($1/τ_{e-p} \varpropto T^3$) and ($1/τ_{e-m} \varpropto T^{3/2}$), respectively. In the AC regime, we compute that $1/τ\propto ω^2$ for $ω\llω_{BG}$ and for the values greater than the Bloch-Grüneisen frequency, it is $ω$-independent. Also, in lower frequency and zero temperature limit, we have observed the different frequency scale of electron-magnon and electron-phonon scattering i.e ($1/τ\propto ω^{3/2}$) and ($1/τ\propto ω^{3}$). These results can be viewed with the pump-probe experimental setting for the normal state of iron pnictides.
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Submitted 23 December, 2020;
originally announced December 2020.
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First-principles discovery of stable two-dimensional materials with high-level piezoelectric response
Authors:
Tuğbey Kocabaş,
Deniz Çakır,
Cem Sevik
Abstract:
The rational design of two-dimensional piezoelectric materials has recently garnered great interest due to their increasing use in technological applications, including sensor technology, actuating devices, energy harvesting, and medical applications. Several materials possessing high piezoelectric response have been reported so far, but a high-throughput first-principles approach to estimate the…
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The rational design of two-dimensional piezoelectric materials has recently garnered great interest due to their increasing use in technological applications, including sensor technology, actuating devices, energy harvesting, and medical applications. Several materials possessing high piezoelectric response have been reported so far, but a high-throughput first-principles approach to estimate the piezoelectric potential of layered materials has not been performed yet. In this study, we systematically investigated the piezoelectric ($e_{11}$, $d_{11}$) and elastic (C$_{11}$ and C$_{12}$) properties of 128 thermodynamically stable two-dimensional (2D) semiconductor materials by employing first-principle methods. Our high-throughput approach demonstrates that the materials containing Group-\textrm{V} elements produce significantly high piezoelectric strain constants, $d_{11}$ $>$ 40 pmV$^{-1}$, and 49 of the materials considered have the $e_{11}$ coefficient higher than MoS$_{2}$ insomuch as BrSSb has one of the largest $d_{11}$ with a value of 373.0 pmV$^{-1}$. Moreover, we established a simple empirical model in order to estimate the $d_{11}$ coefficients by utilizing the relative ionic motion in the unit cell and the polarizability of the individual elements in the compounds.
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Submitted 9 September, 2020; v1 submitted 13 February, 2020;
originally announced February 2020.
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Assessment on Thermal Transport Properties of Group-III Nitrides: A Classical Molecular Dynamics Study with Transferable Tersoff Type Inter-atomic Potentials
Authors:
Yenal Karaaslan,
Haluk Yapicioglu,
Cem Sevik
Abstract:
In this study, by means of classical molecular dynamics simulations, we investigated the thermal transport properties of hexagonal single-layer, zinc-blend and wurtzite phases of BN, AlN, and GaN crystals, which are very promising for the application and design of high-quality electronic devices. With this in mind, we generated fully transferable Tersoff-type empirical inter-atomic potential param…
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In this study, by means of classical molecular dynamics simulations, we investigated the thermal transport properties of hexagonal single-layer, zinc-blend and wurtzite phases of BN, AlN, and GaN crystals, which are very promising for the application and design of high-quality electronic devices. With this in mind, we generated fully transferable Tersoff-type empirical inter-atomic potential parameter sets by utilizing an optimization procedure based on particle swarm optimization. The predicted thermal properties as well as the structural, mechanical and vibrational properties of all materials are in very good agreement with existing experimental and first-principles data. The impact of isotopes on thermal transport is also investigated and between $\sim$10 and 50\% reduction in phonon thermal transport with random isotope distribution is observed in BN and GaN crystals. Our investigation distinctly shows that the generated parameter sets are fully transferable and very useful in exploring the thermal properties of systems containing these nitrides.
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Submitted 31 January, 2020;
originally announced January 2020.
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Electronic structures of iMAX phases and their two-dimensional derivatives: A family of piezoelectric materials
Authors:
Mohammad Khazaei,
Vei Wang,
Cem Sevik,
Ahmad Ranjbar,
Masao Arai,
Seiji Yunoki
Abstract:
Recently, a group of MAX phases, (Mo$_{2/3}$Y$_{1/3}$)$_2$AlC, (Mo$_{2/3}$Sc$_{1/3}$)$_2$AlC, (W$_{2/3}$Sc$_{1/3}$)$_2$AlC, (W$_{2/3}$Y$_{1/3}$)$_2$AlC, and (V$_{2/3}$Zr$_{1/3}$)$_2$AlC, with in-plane ordered double transition metals, named iMAX phases, have been synthesized. Experimentally, some of these MAX phases can be chemically exfoliated into two-dimensional (2D) single- or multilayered tra…
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Recently, a group of MAX phases, (Mo$_{2/3}$Y$_{1/3}$)$_2$AlC, (Mo$_{2/3}$Sc$_{1/3}$)$_2$AlC, (W$_{2/3}$Sc$_{1/3}$)$_2$AlC, (W$_{2/3}$Y$_{1/3}$)$_2$AlC, and (V$_{2/3}$Zr$_{1/3}$)$_2$AlC, with in-plane ordered double transition metals, named iMAX phases, have been synthesized. Experimentally, some of these MAX phases can be chemically exfoliated into two-dimensional (2D) single- or multilayered transition metal carbides, so-called MXenes. Accordingly, the 2D nanostructures derived from iMAX phases are named iMXenes. Here, we investigate the structural stabilities and electronic structures of the experimentally discovered iMAX phases and their possible iMXene derivatives. We show that the iMAX phases and their pristine, F, or OH-terminated iMXenes are metallic. However, upon O termination, (Mo$_{2/3}$Y$_{1/3}$)$_2$C, (Mo$_{2/3}$Sc$_{1/3}$)$_2$C, (W$_{2/3}$Y$_{1/3}$)$_2$C, and (W$_{2/3}$Sc$_{1/3}$)$_2$C iMXenes turn into semiconductors. Owing to the absence of centrosymmetry, the semiconducting iMXenes may find applications in piezoelectricity. Our calculations reveal that the semiconducting iMXenes possess giant piezoelectric coefficients as large as 45$\times10^{-10}$~C/m.
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Submitted 23 June, 2018; v1 submitted 20 June, 2018;
originally announced June 2018.
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Gate induced monolayer behavior in twisted bilayer black phosphorus
Authors:
Cem Sevik,
John R. Wallbank,
Oguz Gulseren,
Francois M. Peeters,
Deniz Cakır
Abstract:
Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic properties of bilayer black phosphorus with an interlayer twist angle of 90$^\circ$. These calculations are complemented with a simple $\vec{k}\cdot\vec{p}$ model whic…
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Optical and electronic properties of black phosphorus strongly depend on the number of layers and type of stacking. Using first-principles calculations within the framework of density functional theory, we investigate the electronic properties of bilayer black phosphorus with an interlayer twist angle of 90$^\circ$. These calculations are complemented with a simple $\vec{k}\cdot\vec{p}$ model which is able to capture most of the low energy features and is valid for arbitrary twist angles. The electronic spectrum of 90$^\circ$ twisted bilayer black phosphorus is found to be x-y isotropic in contrast to the monolayer. However x-y anisotropy, and a partial return to monolayer-like behavior, particularly in the valence band, can be induced by an external out-of-plane electric field. Moreover, the preferred hole effective mass can be rotated by 90$^\circ$ simply by changing the direction of the applied electric field. In particular, a +0.4 (-0.4) V/Å out-of-plane electric field results in a $\sim$60\% increase in the hole effective mass along the y (x) axis and enhances the $m^*_{y}/m^*_{x}$ ($m^*_{x}/m^*_{y}$) ratio as much as by a factor of 40. Our DFT and $\vec{k}\cdot\vec{p}$ simulations clearly indicate that the twist angle in combination with an appropriate gate voltage is a novel way to tune the electronic and optical properties of bilayer phosphorus and it gives us a new degree of freedom to engineer the properties of black phosphorus based devices.
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Submitted 6 September, 2017;
originally announced September 2017.
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Distinct Correlation between the Vibrational and Thermal Transport Properties of Group \textrm{VA} Monolayer Crystals
Authors:
Tugbey Kocabas,
Deniz Cakir,
Oguz Gulseren,
Feridun Ay,
Nihan K. Perkgoz,
Cem Sevik
Abstract:
The investigation of thermal transport properties of novel two dimensional materials is crucially important in order to assess their potential to be used in future technological applications, such as thermoelectric power generation. In this respect, lattice thermal transport properties of monolayer structures of the group \textrm{VA} elements (P, As, Sb, Bi, PAs, PSb, PBi, AsSb, AsBi, SbBi, P…
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The investigation of thermal transport properties of novel two dimensional materials is crucially important in order to assess their potential to be used in future technological applications, such as thermoelectric power generation. In this respect, lattice thermal transport properties of monolayer structures of the group \textrm{VA} elements (P, As, Sb, Bi, PAs, PSb, PBi, AsSb, AsBi, SbBi, P$_{3}$As$_{1}$, P$_{3}$Sb$_{1}$, P$_{1}$As$_{3}$, As$_{3}$Sb$_{1}$) with black phosphorus like puckered structure were systematically investigated by first principles calculations and an iterative solution of the Phonon Boltzmann transport equation. Phosphorene was found to have the highest lattice thermal conductivity, $κ$, due to its low average atomic mass and strong interatomic bonding character. As a matter of course, anisotropic $κ$ were obtained for all the considered materials, owing to anisotropy in phonon group velocities and scattering rates (relaxation times) calculated for these structures. However, the determined linear correlation between the anisotropy in $κ$ of P, As, and Sb is significant. The results corresponding to the studied compound structures clearly point out that thermal (electronic) conductivity of pristine monolayers might be suppressed (improved) by alloying them with the same group elements. For instance, the room temperature $κ$ of PBi along armchair direction was predicted as low as 1.5 Wm$^{-1}$K$^{-1}$, whereas that of P was predicted to be 21 Wm$^{-1}$K$^{-1}$. In spite of the apparent differences in structural and vibrational properties, we peculiarly revealed an intriguing correlation between the $κ$ of all the considered materials as $κ$=c$_{1}$ + c$_{2}$/$m^{2}$, in particular along zigzag direction.
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Submitted 19 December, 2017; v1 submitted 24 April, 2017;
originally announced April 2017.
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Piezoelectricity in two-dimensional materials: a comparative study between lattice dynamics and ab-initio calculations
Authors:
K. H. Michel,
D. Cakır,
C. Sevik,
F. M. Peeters
Abstract:
Elastic constant C_{11} and piezoelectric stress constant e_{1,11} of two-dimensional (2D) dielectric materials comprising h-BN, 2H MoS2 and other transition metal dichalcogenides (TMDCs) and -dioxides (TMDOs) are calculated using lattice dynamical theory. The results are compared with corresponding quantities obtained by ab-initio calculations. We identify the difference between clamped-ion and r…
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Elastic constant C_{11} and piezoelectric stress constant e_{1,11} of two-dimensional (2D) dielectric materials comprising h-BN, 2H MoS2 and other transition metal dichalcogenides (TMDCs) and -dioxides (TMDOs) are calculated using lattice dynamical theory. The results are compared with corresponding quantities obtained by ab-initio calculations. We identify the difference between clamped-ion and relaxed-ion contributions with the dependence on inner strains which are due to the relative displacements of the ions in the unit cell. Lattice dynamics allows to express the inner strains contributions in terms of microscopic quantities such as effective ionic charges and optoacoustical couplings, which allows us to clarify differences in the piezoelectric behavior between h- BN versus MoS2. Trends in the different microscopic quantities as functions of atomic composition are discussed.
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Submitted 21 February, 2017;
originally announced March 2017.
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Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb
Authors:
Aslı Çakan,
Cem Sevik,
Ceyhun Bulutay
Abstract:
The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results…
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The properties of a semiconductor get drastically modified when the crystal point group symmetry is broken under an arbitrary strain. We investigate the family of semiconductors consisting of GaAs, GaSb, InAs and InSb, considering their electronic band structure and deformation potentials subject to various strains based on hybrid density functional theory. Guided by these first-principles results, we develop strain-compliant local pseudopotentials for use in the empirical pseudopotential method (EPM). We demonstrate that the newly proposed empirical pseudopotentials perform well close to band edges and under anisotropic crystal deformations. Using EPM, we explore the heavy hole-light hole mixing characteristics under different stress directions which may be useful in manipulating their transport properties and optical selection rules. The very low 5 Ry cutoff targeted in the generated pseudopotentials paves the way for large-scale EPM-based electronic structure computations involving these lattice mismatched constituents.
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Submitted 22 May, 2016;
originally announced May 2016.
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Remarkable effect of stacking on the electronic and optical properties of few layer black phosphorus
Authors:
Deniz Cakir,
Cem Sevik,
Francois M. Peeters
Abstract:
The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density functional theory. We find that inclusion of many body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic a…
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The effect of the number of stacking layers and the type of stacking on the electronic and optical properties of bilayer and trilayer black phosphorus are investigated by using first principles calcula- tions within the framework of density functional theory. We find that inclusion of many body effects (i.e., electron-electron and electron-hole interactions) modifies strongly both the electronic and opti- cal properties of black phosphorus. While trilayer black phosphorus with a particular stacking type is found to be a metal by using semilocal functionals, it is predicted to have an electronic band gap of 0.82 eV when many-body effects are taken into account within the G0W0 scheme. Though different stacking types result in similar energetics, the size of the band gap and the optical response of bilayer and trilayer phosphorene is very sensitive to the number of layers and the stacking type. Regardless of the number of layers and the type of stacking, bilayer and trilayer black phosphorus are direct band gap semiconductors whose band gaps vary within a range of 0.3 eV. Stacking arrangments different from the ground state structure in both bilayer and trilayer black phosphorus significantly modify valence bands along the zigzag direction and results in larger hole effective masses. The optical gap of bilayer (trilayer) black phosphorus varies by 0.4 (0.6) eV when changing the stacking type. Due to strong interlayer interaction, some stackings obstruct the observation of the optical excitation of bound excitons within the quasi-particle band gap. In other stackings, the binding energy of bound excitons hardly changes with the type of stacking and is found to be 0.44 (0.30) eV for bilayer (trilayer) phosphorous.
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Submitted 15 June, 2015;
originally announced June 2015.
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Assessment of the Thermal Conductivity of BN-C Nanostructures
Authors:
Alper Kinaci,
Justin B. Haskins,
Cem Sevik,
Tahir Cagin
Abstract:
Chemical and structural diversity present in hexagonal boron nitride ((h-BN) and graphene hybrid nanostructures provide new avenues for tuning various properties for their technological applications. In this paper we investigate the variation of thermal conductivity ($κ$) of hybrid graphene/h-BN nanostructures: stripe superlattices and BN (graphene) dots embedded in graphene (BN) are investigated…
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Chemical and structural diversity present in hexagonal boron nitride ((h-BN) and graphene hybrid nanostructures provide new avenues for tuning various properties for their technological applications. In this paper we investigate the variation of thermal conductivity ($κ$) of hybrid graphene/h-BN nanostructures: stripe superlattices and BN (graphene) dots embedded in graphene (BN) are investigated using equilibrium molecular dynamics. To simulate these systems, we have parameterized a Tersoff type interaction potential to reproduce the ab initio energetics of the B-C and N-C bonds for studying the various interfaces that emerge in these hybrid nanostructures. We demonstrate that both the details of the interface, including energetic stability and shape, as well as the spacing of the interfaces in the material exert strong control on the thermal conductivity of these systems. For stripe superlattices, we find that zigzag configured interfaces produce a higher $κ$ in the direction parallel to the interface than the armchair configuration, while the perpendicular conductivity is less prone to the details of the interface and is limited by the $κ$ of h-BN. Additionally, the embedded dot structures, having mixed zigzag and armchair interfaces, affects the thermal transport properties more strongly than superlattices. Though dot radius appears to have little effect on the magnitude of reduction, we find that dot concentration (50% yielding the greatest reduction) and composition (embedded graphene dots showing larger reduction that h-BN dot) have a significant effect.
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Submitted 17 August, 2012;
originally announced August 2012.
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Auger recombination and carrier multiplication in embedded silicon and germanium nanocrystals
Authors:
C. Sevik,
C. Bulutay
Abstract:
For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave functions. Our results in support of recent experimental data offer new predictions. We extract simple Auger constants valid for NCs. We show that both Si and Ge NCs…
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For Si and Ge nanocrystals (NCs) embedded in wide band-gap matrices, Auger recombination (AR) and carrier multiplication (CM) lifetimes are computed exactly in a three-dimensional real space grid using empirical pseudopotential wave functions. Our results in support of recent experimental data offer new predictions. We extract simple Auger constants valid for NCs. We show that both Si and Ge NCs can benefit from photovoltaic efficiency improvement via CM due to the fact that under an optical excitation exceeding twice the band gap energy, the electrons gain lion's share from the total excess energy and can cause a CM. We predict that CM becomes especially efficient for hot electrons with an excess energy of about 1 eV above the CM threshold.
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Submitted 16 April, 2008; v1 submitted 10 September, 2007;
originally announced September 2007.
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Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4
Authors:
C. Sevik,
C. Bulutay
Abstract:
An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO_{2}, GeO_{2}, Al_{2}O_{3}, Si_{3}N_{4}, and Ge_{3}N_{4}. Their important polymorphs are considered which are for SiO_{2}: $α$-quartz, $α$- and $β$-cristobalite and stishovite, for GeO_{2}: $α$-quartz, and rutile, for Al_{2}O_{3}: $α$-phase, for Si_{3}N_{4} and Ge_{3}N_{4}: $α$- and $β$-phase…
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An extensive theoretical study is performed for wide bandgap crystalline oxides and nitrides, namely, SiO_{2}, GeO_{2}, Al_{2}O_{3}, Si_{3}N_{4}, and Ge_{3}N_{4}. Their important polymorphs are considered which are for SiO_{2}: $α$-quartz, $α$- and $β$-cristobalite and stishovite, for GeO_{2}: $α$-quartz, and rutile, for Al_{2}O_{3}: $α$-phase, for Si_{3}N_{4} and Ge_{3}N_{4}: $α$- and $β$-phases. This work constitutes a comprehensive account of both electronic structure and the elastic properties of these important insulating oxides and nitrides obtained with high accuracy based on density functional theory within the local density approximation. Two different norm-conserving \textit{ab initio} pseudopotentials have been tested which agree in all respects with the only exception arising for the elastic properties of rutile GeO_{2}. The agreement with experimental values, when available, are seen to be highly satisfactory. The uniformity and the well convergence of this approach enables an unbiased assessment of important physical parameters within each material and among different insulating oxide and nitrides. The computed static electric susceptibilities are observed to display a strong correlation with their mass densities. There is a marked discrepancy between the considered oxides and nitrides with the latter having sudden increase of density of states away from the respective band edges. This is expected to give rise to excessive carrier scattering which can practically preclude bulk impact ionization process in Si_{3}N_{4} and Ge_{3}N_{4}.
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Submitted 23 July, 2007; v1 submitted 6 October, 2006;
originally announced October 2006.
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High-dielectric constant and wide band gap inverse silver oxide phases of the ordered ternary alloys of SiO$_{2}$, GeO$_{2}$ and SnO$_{2}$
Authors:
C. Sevik,
C. Bulutay
Abstract:
High-dielectric constant and wide band gap oxides have important technological applications. The crystalline oxide polymorphs having lattice constant compatibility to silicon are particularly desirable. One recently reported candidate is the inverse silver oxide phase of SiO$_2$. First-principles study of this system together with its isovalent equivalents GeO$_{2}$, SnO$_{2}$ as well as their t…
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High-dielectric constant and wide band gap oxides have important technological applications. The crystalline oxide polymorphs having lattice constant compatibility to silicon are particularly desirable. One recently reported candidate is the inverse silver oxide phase of SiO$_2$. First-principles study of this system together with its isovalent equivalents GeO$_{2}$, SnO$_{2}$ as well as their ternary alloys are performed. Within the framework of density functional theory both generalized gradient approximation and local density approximation (LDA) are employed to obtain their structural properties, elastic constants and the electronic band structures. To check the stability of these materials, phonon dispersion curves are computed which indicate that GeO$_{2}$ and SnO$_{2}$ have negative phonon branches whereas their ternary alloys Si$_{0.5}$Ge$_{0.5}$O$_{2}$, Si$_{0.5}$Sn$_{0.5}$O$_{2}$, and Ge$_{0.5}$Sn$_{0.5}$O$_{2}$ are all stable within LDA possessing dielectric constants ranging between 10 to 20. Furthermore, the lattice constant of Si$_{0.5}$Ge$_{0.5}$O$_{2}$ is virtually identical to the Si(100) surface. The $GW$ band gaps of the stable materials are computed which restore the wide band gap values in addition to their high dielectric constants.
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Submitted 1 December, 2006; v1 submitted 14 July, 2006;
originally announced July 2006.
