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Micro-Fracture Detection in Photovoltaic Cells with Hardware-Constrained Devices and Computer Vision
Authors:
Booy Vitas Faassen,
Jorge Serrano,
Paul D. Rosero-Montalvo
Abstract:
Solar energy is rapidly becoming a robust renewable energy source to conventional finite resources such as fossil fuels. It is harvested using interconnected photovoltaic panels, typically built with crystalline silicon cells, i.e. semiconducting materials that convert effectively the solar radiation into electricity. However, crystalline silicon is fragile and vulnerable to cracking over time or…
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Solar energy is rapidly becoming a robust renewable energy source to conventional finite resources such as fossil fuels. It is harvested using interconnected photovoltaic panels, typically built with crystalline silicon cells, i.e. semiconducting materials that convert effectively the solar radiation into electricity. However, crystalline silicon is fragile and vulnerable to cracking over time or in predictive maintenance tasks, which can lead to electric isolation of parts of the solar cell and even failure, thus affecting the panel performance and reducing electricity generation. This work aims to developing a system for detecting cell cracks in solar panels to anticipate and alaert of a potential failure of the photovoltaic system by using computer vision techniques. Three scenarios are defined where these techniques will bring value. In scenario A, images are taken manually and the system detecting failures in the solar cells is not subject to any computationa constraints. In scenario B, an Edge device is placed near the solar farm, able to make inferences. Finally, in scenario C, a small microcontroller is placed in a drone flying over the solar farm and making inferences about the solar cells' states. Three different architectures are found the most suitable solutions, one for each scenario, namely the InceptionV3 model, an EfficientNetB0 model shrunk into full integer quantization, and a customized CNN architechture built with VGG16 blocks.
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Submitted 8 March, 2024;
originally announced March 2024.
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Temperature dependence of the Raman spectrum of orthorhombic Bi2Se3
Authors:
Irene Mediavilla-Martinez,
Christian Kramberger,
Shabnam Dadgostar,
Juan Jimenez,
Paola Ayala,
Thomas Pichler,
Francisco J. Manjon,
Placida Rodriguez-Hernandez,
Alfonso Muñoz,
Nadezhda Serebryanaya,
Sergei Buga,
Jorge Serrano
Abstract:
Bismuth selenide, a benchmark topological insulator, grows in a trigonal structure at ambient conditions and exhibits a number of enticing properties related to the formation of Dirac surface states. Besides this polytype, a metastable orthorhombic modification with Pnma space group has been produced by electrodeposition and high-pressure high-temperature synthesis displaying upon Sb doping signif…
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Bismuth selenide, a benchmark topological insulator, grows in a trigonal structure at ambient conditions and exhibits a number of enticing properties related to the formation of Dirac surface states. Besides this polytype, a metastable orthorhombic modification with Pnma space group has been produced by electrodeposition and high-pressure high-temperature synthesis displaying upon Sb doping significant thermoelectric properties in the midtemperature range. However, very little experimental information is available on the fundamental properties of this polytype, such as, e.g., the electronic band gap and the lattice dynamics. We report here the temperature dependence of the Raman spectra of orthorhombic Bi2Se3 between 10 K and 300 K, which displays an anharmonic behavior of the optical phonons that can be modelled with a two-phonon decay channel. In order to analyze the data we performed ab initio calculations of the electronic bandstructure, the phonon frequencies at the center of the Brillouin zone, and the phonon dispersion relations along the main symmetry directions, examining the effect of spin-orbit coupling in both phonon and electronic energies. Lastly, we report here cathodoluminescence experiments at 83 K that set a lower limit to the electronic bandgap at 0.835 eV, pointing to an indirect nature, in agreement with our calculations. These results shed light to essential properties of orthorhombic Bi2Se3 for further understanding of the potential of this semiconductor for thermoelectrics and new applications.
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Submitted 4 March, 2025; v1 submitted 11 February, 2024;
originally announced February 2024.
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Lattice dynamics and phase stability of rhombohedral antimony under high pressure
Authors:
Arianna Minelli,
Sofia Michaela Souliou,
Tra Nguyen-Thanh,
Aldo Humberto Romero,
Jorge Serrano,
Wilfredo Ibarra Hernandez,
Matthieu J. Verstraete,
Vladimir Dmitriev,
Alexei Bosak
Abstract:
The high pressure lattice dynamics of rhombohedral antimony have been studied by a combination of diffuse scattering and inelastic x-ray scattering. The evolution of the phonon behavior as function of pressure was analyzed by means of two theoretical approaches: density functional perturbation theory and symmetry-based phenomenological phase transition analysis. This paper focuses on the first str…
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The high pressure lattice dynamics of rhombohedral antimony have been studied by a combination of diffuse scattering and inelastic x-ray scattering. The evolution of the phonon behavior as function of pressure was analyzed by means of two theoretical approaches: density functional perturbation theory and symmetry-based phenomenological phase transition analysis. This paper focuses on the first structural phase transition, SbI-SbIV, and the role of vibrations in leading the transition. The phonon dispersion exhibits complex behaviour as one approaches the structural transition, with the branches, corresponding to the two transitions happening at high pressure in the Va elements (A7-to-BCC and A7-to-PC) both showing softening.
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Submitted 6 May, 2019;
originally announced May 2019.
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Non-adiabatic Kohn Anomaly in Heavily Boron-doped Diamond
Authors:
Fabio Caruso,
Moritz Hoesch,
Philipp Achatz,
Jorge Serrano,
Michael Krisch,
Etienne Bustarret,
Feliciano Giustino
Abstract:
We report evidence of a non-adiabatic Kohn anomaly in boron-doped diamond, using a joint theoretical and experimental analysis of the phonon dispersion relations. We demonstrate that standard calculations of phonons using density functional perturbation theory are unable to reproduce the dispersion relations of the high-energy phonons measured by high-resolution inelastic x-ray scattering. On the…
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We report evidence of a non-adiabatic Kohn anomaly in boron-doped diamond, using a joint theoretical and experimental analysis of the phonon dispersion relations. We demonstrate that standard calculations of phonons using density functional perturbation theory are unable to reproduce the dispersion relations of the high-energy phonons measured by high-resolution inelastic x-ray scattering. On the contrary, by taking into account non-adiabatic effects within a many-body field-theoretic framework, we obtain excellent agreement with our experimental data. This result indicates a breakdown of the Born-Oppenheimer approximation in the phonon dispersion relations of boron-doped diamond.
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Submitted 7 June, 2017;
originally announced June 2017.
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Element-Resolved Corrosion Analysis of Stainless-Type Glass-Forming Steels
Authors:
M. J. Duarte,
J. Klemm,
S. O. Klemm,
K. J. J. Mayrhofer,
M. Stratmann,
S. Borodin,
A. H. Romero,
M. Madinehe,
D. Crespo,
J. Serrano,
S. S. A. Gerstl,
P. P. Choi,
D. Raabe,
F. U. Renner
Abstract:
Ultrathin passive films effectively prevent the chemical attack of stainless steel grades in corrosive environments; their stability critically depends on the interplay between structure and chemistry of the constituents Fe-Cr-Mo. In particular, nanoscale inhomogeneities along the surface can have a tremendous impact on material failure, but are yet barely understood. Addressing a stainless-type g…
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Ultrathin passive films effectively prevent the chemical attack of stainless steel grades in corrosive environments; their stability critically depends on the interplay between structure and chemistry of the constituents Fe-Cr-Mo. In particular, nanoscale inhomogeneities along the surface can have a tremendous impact on material failure, but are yet barely understood. Addressing a stainless-type glass-forming Fe50Cr15Mo14C15B6 alloy and utilizing a combination of complementary high-resolution analytical techniques, we relate near-atomistic insight into different gradual nanostructures with time- and element-resolved dissolution behavior. The progressive elemental segregation on the nanoscale is followed in its influence on the concomitant degree of passivity. A detrimental transition from Cr-controlled passivity to Mo-controlled breakdown is dissected atom-by-atom demonstrating the importance of nanoscale knowledge for understanding corrosion.
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Submitted 13 February, 2014;
originally announced February 2014.
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Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride
Authors:
S. Galambosi,
L. Wirtz,
J. A. Soininen,
J. Serrano,
A. Marini,
K. Watanabe,
T. Taniguchi,
S. Huotari,
A. Rubio,
K. Hämäläinen
Abstract:
We demonstrate that the valence energy-loss function of hexagonal boron nitride (hBN) displays a strong anisotropy in shape, excitation energy and dispersion for momentum transfer q parallel or perpendicular to the hBN layers. This is manifested by e.g. an energy shift of 0.7 eV that cannot be captured by single-particle approaches and is a demonstration of a strong anisotropy in the two-body el…
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We demonstrate that the valence energy-loss function of hexagonal boron nitride (hBN) displays a strong anisotropy in shape, excitation energy and dispersion for momentum transfer q parallel or perpendicular to the hBN layers. This is manifested by e.g. an energy shift of 0.7 eV that cannot be captured by single-particle approaches and is a demonstration of a strong anisotropy in the two-body electron-hole interaction. Furthermore, for in-plane directions of q we observe a splitting of the -plasmon in the M direction that is absent in the K direction and this can be traced back to band-structure effects.
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Submitted 6 May, 2010;
originally announced May 2010.
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Phonon surface mapping of graphite: disentangling quasi--degenerate phonon dispersions
Authors:
A. Grüneis,
J. Serrano,
A. Bosak,
M. Lazzeri,
S. L. Molodtsov,
L. Wirtz,
C. Attaccalite,
M. Krisch,
A. Rubio,
F. Mauri,
T. Pichler
Abstract:
The two-dimensional mapping of the phonon dispersions around the $K$ point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and longitudinal phonon branches at $K$. We observe an almost degeneracy of the three TO, LA and LO derived phonon branches and a strong phonon trigonal warping. Correlati…
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The two-dimensional mapping of the phonon dispersions around the $K$ point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and longitudinal phonon branches at $K$. We observe an almost degeneracy of the three TO, LA and LO derived phonon branches and a strong phonon trigonal warping. Correlation effects renormalize the Kohn anomaly of the TO mode, which exhibits a trigonal warping effect opposite to that of the electronic band structure. We determined the electron--phonon coupling constant to be 166$\rm(eV/Å)^2$ in excellent agreement to $GW$ calculations. These results are fundamental for understanding angle-resolved photoemission, double--resonance Raman and transport measurements of graphene based systems.
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Submitted 21 April, 2009;
originally announced April 2009.
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Lattice Properties of PbX (X = S, Se, Te): Experimental Studies and ab initio Calculations Including Spin-Orbit Effects
Authors:
A. H. Romero,
M. Cardona,
R. K. Kremer,
R. Lauck,
G. Siegle,
J. Serrano,
X. C. Gonze
Abstract:
During the past five years the low temperature heat capacity of simple semiconductors and insulators has received renewed attention. Of particular interest has been its dependence on isotopic masses and the effect of spin- orbit coupling in ab initio calculations. Here we concentrate on the lead chalcogenides PbS, PbSe and PbTe. These materials, with rock salt structure, have different natural i…
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During the past five years the low temperature heat capacity of simple semiconductors and insulators has received renewed attention. Of particular interest has been its dependence on isotopic masses and the effect of spin- orbit coupling in ab initio calculations. Here we concentrate on the lead chalcogenides PbS, PbSe and PbTe. These materials, with rock salt structure, have different natural isotopes for both cations and anions, a fact that allows a systematic experimental and theoretical study of isotopic effects e.g. on the specific heat. Also, the large spin-orbit splitting of the 6p electrons of Pb and the 5p of Te allows, using a computer code which includes spin-orbit interaction, an investigation of the effect of this interaction on the phonon dispersion relations and the temperature dependence of the specific heat and on the lattice parameter. It is shown that agreement between measurements and calculations significantly improves when spin-orbit interaction is included.
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Submitted 22 August, 2008;
originally announced August 2008.
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Temperature-dependent Raman scattering of natural and isotopically substituted PbS
Authors:
P. G. Etchegoin,
M. Cardona,
R. Lauck,
R. J. H. Clark,
J. Serrano,
A. H. Romero
Abstract:
Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this material because of the forbidden nature of its first order scattering and its opacity to visible lasers. Nevertheless, useful vibrational spectra from two-phonon…
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Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this material because of the forbidden nature of its first order scattering and its opacity to visible lasers. Nevertheless, useful vibrational spectra from two-phonon processes are obtained with red lasers, probably because of a resonance in the concomitant electronic transitions. Here we report temperature dependent spectra, covering the 10-300 K range, for two samples with different sulfur isotopic compositions. The results are analyzed by comparison with ab initio calculations of the lattice dynamics of PbS and the corresponding densities of one and two-phonon states. Emphasis is placed on the analysis of the two phonon band centered at ~430 cm-1.
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Submitted 2 September, 2007;
originally announced September 2007.
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Heat Capacity of PbS: Isotope Effects
Authors:
M. Cardona,
R. K. Kremer,
R. Lauck,
G. Siegle,
J. Serrano,
A. H. Romero
Abstract:
In recent years, the availability of highly pure stable isotopes has made possible the investigation of the dependence of the physical properties of crystals, in particular semiconductors, on their isotopic composition. Following the investigation of the specific heat ($C_p$, $C_v$) of monatomic crystals such as diamond, silicon, and germanium, similar investigations have been undertaken for the…
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In recent years, the availability of highly pure stable isotopes has made possible the investigation of the dependence of the physical properties of crystals, in particular semiconductors, on their isotopic composition. Following the investigation of the specific heat ($C_p$, $C_v$) of monatomic crystals such as diamond, silicon, and germanium, similar investigations have been undertaken for the tetrahedral diatomic systems ZnO and GaN (wurtzite structure), for which the effect of the mass of the cation differs from that of the anion. In this article we present measurements for a semiconductor with rock salt structure, namely lead sulfide. Because of the large difference in the atomic mass of both constituents ($M_{\rm Pb}$= 207.21 and ($M_{\rm S}$=32.06 a.m.u., for the natural isotopic abundance) the effects of varying the cation and that of the anion mass are very different for this canonical semiconductor. We compare the measured temperature dependence of $C_p \approx C_v$, and the corresponding derivatives with respect to ($M_{\rm Pb}$ and $M_{\rm S}$), with \textit{\textit{ab initio}} calculations based on the lattice dynamics obtained from the local density approximation (LDA) electronic band structure. Quantitative deviations between theory and experiment are attributed to the absence of spin-orbit interaction in the ABINIT program used for the electronic band structure calculations.
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Submitted 12 May, 2007;
originally announced May 2007.
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Electron-phonon renormalization of the absorption edge of the cuprous halides
Authors:
J. Serrano,
Ch. Schweitzer,
C. T. Lin,
K. Reimann,
M. Cardona,
D. Froehlich
Abstract:
Compared to most tetrahedral semiconductors, the temperature dependence of the absorption edges of the cuprous halides (CuCl, CuBr, CuI) is very small. CuCl and CuBr show a small increase of the gap $E_0$ with increasing temperature, with a change in the slope of $E_0$ vs. $T$ at around 150 K: above this temperature, the variation of $E_0$ with $T$ becomes even smaller. This unusual behavior has…
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Compared to most tetrahedral semiconductors, the temperature dependence of the absorption edges of the cuprous halides (CuCl, CuBr, CuI) is very small. CuCl and CuBr show a small increase of the gap $E_0$ with increasing temperature, with a change in the slope of $E_0$ vs. $T$ at around 150 K: above this temperature, the variation of $E_0$ with $T$ becomes even smaller. This unusual behavior has been clarified for CuCl by measurements of the low temperature gap vs. the isotopic masses of both constituents, yielding an anomalous negative shift with increasing copper mass. Here we report the isotope effects of Cu and Br on the gap of CuBr, and that of Cu on the gap of CuI. The measured isotope effects allow us to understand the corresponding temperature dependences, which we also report, to our knowledge for the first time, in the case of CuI. These results enable us to develop a more quantitative understanding of the phenomena mentioned for the three halides, and to interpret other anomalies reported for the temperature dependence of the absorption gap in copper and silver chalcogenides; similarities to the behavior observed for the copper chalcopyrites are also pointed out.
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Submitted 25 September, 2001;
originally announced September 2001.
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Disorder-induced phonon self-energy of semiconductors with binary isotopic composition
Authors:
F. Widulle,
J. Serrano,
M. Cardona
Abstract:
Self-energy effects of Raman phonons in isotopically disordered semiconductors are deduced by perturbation theory and compared to experimental data. In contrast to the acoustic frequency region, higher-order terms contribute significantly to the self-energy at optical phonon frequencies. The asymmetric dependence of the self-energy of a binary isotope system $m_{1-x} M_x$ on the concentration of…
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Self-energy effects of Raman phonons in isotopically disordered semiconductors are deduced by perturbation theory and compared to experimental data. In contrast to the acoustic frequency region, higher-order terms contribute significantly to the self-energy at optical phonon frequencies. The asymmetric dependence of the self-energy of a binary isotope system $m_{1-x} M_x$ on the concentration of the heavier isotope mass x can be explained by taking into account second- and third-order perturbation terms. For elemental semiconductors, the maximum of the self-energy occurs at concentrations with $0.5<x<0.7$, depending on the strength of the third-order term. Reasonable approximations are imposed that allow us to derive explicit expressions for the ratio of successive perturbation terms of the real and the imaginary part of the self-energy. This basic theoretical approach is compatible with Raman spectroscopic results on diamond and silicon, with calculations based on the coherent potential approximation, and with theoretical results obtained using {\it ab initio} electronic theory. The extension of the formalism to binary compounds, by taking into account the eigenvectors at the individual sublattices, is straightforward. In this manner, we interpret recent experimental results on the disorder-induced broadening of the TO (folded) modes of SiC with a $^{13}{\rm C}$-enriched carbon sublattice. \cite{Rohmfeld00,Rohmfeld01}
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Submitted 5 July, 2001;
originally announced July 2001.
