Showing 1–4 of 4 results for author: Sergeev, A I

Probing the Interaction Between Topological and Rashba-like Surface States in MnBi$_2$Te$_4$ Through Sn Doping

Authors: A. V. Tarasov, D. A. Estyunin, A. G. Rybkin, A. S. Frolov, A. I. Sergeev, A. V. Eryzhenkov, V. V. Anferova, T. P. Estyunina, D. A. Glazkova, K. A. Kokh, V. A. Golyashov, O. E. Tereshchenko, S. Ideta, Y. Miyai, Y. Kumar, K. Shimada, A. M. Shikin

Abstract: The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory… ▽ More The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we investigate the interaction between topological and Rashba-like surface states (TSS and RSS) in Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ systems using density functional theory (DFT) calculations and high-resolution ARPES. Our findings reveal that increasing Sn concentration shifts RSS downward in energy, enhancing their influence on the electronic structure near the Fermi level. ARPES validates these predictions, capturing the evolution of RSS and their hybridization with TSS. Orbital analysis shows RSS are localized within the first three Te-Bi-Te trilayers, dominated by Bi $p$-orbitals, with evidence of the orbital Rashba effect enhancing spin-momentum locking. At higher Sn concentrations, RSS penetrate deeper into the crystal, driven by Sn $p$-orbital contributions. These results position Mn$_{1-x}$Sn$_x$Bi$_2$Te$_4$ as a tunable platform for tailoring electronic properties in spintronic and quantum technologies. △ Less

Submitted 24 December, 2024; originally announced December 2024.

Growth of bulk crystals of magnetic topological insulators under peritectic conditions

Authors: Anton I. Sergeev, Alexander S. Frolov, Nadezhda V. Vladimirova, Arseny A. Naumov, Maria Kirsanova, Mark A. Naumov, Vasily S. Stolyarov, Vladimir A. Golyashov, Oleg E. Tereshchenko, Ilya I. Klimovskikh, Marina E. Tamm, Lada V. Yashina

Abstract: Magnetic topological materials (MTIs) including MnBi$_2$Te$_4$ are of scientific interest due to the possibility to reveal the interplay between topological and magnetic orders. For these materials preparation issues are still challenging. In our paper we report new synthetic protocol using two-phase source in Bridgman-like growth procedure. We applied it to grow a number of TIs of GeAs$_2$Te$_4$… ▽ More Magnetic topological materials (MTIs) including MnBi$_2$Te$_4$ are of scientific interest due to the possibility to reveal the interplay between topological and magnetic orders. For these materials preparation issues are still challenging. In our paper we report new synthetic protocol using two-phase source in Bridgman-like growth procedure. We applied it to grow a number of TIs of GeAs$_2$Te$_4$ structural type including individual compounds MnBi$_2$Te$_4$, MnSb$_2$Te$_4$, GeBi$_2$Te$_4$, SnBi$_2$Te$_4$, PbBi$_2$Te$_4$ and several mixed crystals of whole range of compositions: Mn(Bi,Sb)$_2$Te$_4$, (Ge,Mn)Bi$_2$Te$_4$, new materials Mn(Bi,In)$_2$Te$_4$. The method developed can be used to obtain single crystals of any incongruently melted compounds with small region of primary crystallization from melt in the corresponding equilibrium phase diagrams. △ Less

Submitted 23 December, 2024; originally announced December 2024.

Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi$_2$Te$_4$-family materials

Authors: I. I. Klimovskikh, S. V. Eremeev, D. A. Estyunin, S. O. Filnov, K. Shimada, V. A. Golyashov, O. E. Tereshchenko, K. A. Kokh, A. S. Frolov, A. I. Sergeev, V. S. Stolyarov, V. Miksic Trontl, L. Petaccia, G. Di Santo, M. Tallarida, J. Dai, S. Blanco-Canosa, T. Valla, A. M. Shikin, E. V. Chulkov

Abstract: Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifi… ▽ More Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Magnetic Dirac semimetal state of (Mn,Ge)Bi$_2$Te$_4$

Authors: Alexander S. Frolov, Dmitry Yu. Usachov, Artem V. Tarasov, Alexander V. Fedorov, Kirill A. Bokai, Ilya Klimovskikh, Vasily S. Stolyarov, Anton I. Sergeev, Alexander N. Lavrov, Vladimir A. Golyashov, Oleg E. Tereshchenko, Giovanni Di Santo, Luca Petaccia, Oliver J. Clark, Jaime Sanchez-Barriga, Lada V. Yashina

Abstract: For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dep… ▽ More For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs. △ Less

Submitted 22 June, 2023; originally announced June 2023.