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Neutral-dangling bond depletion in a-SiN films caused by magnetic rare-earth elements
Authors:
M. S. Sercheli,
C. Rettori,
A. R. Zanatta
Abstract:
Amorphous silicon-nitrogen thin films doped with rare-earth elements (a-SiN:RE; RE = Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu) have been prepared by co-sputtering and studied by means of electron spin resonance (ESR). It was found that the neutral dangling-bond density [D0] of a-SiN films decreases with the presence of magnetic REs and the drop of [D0] approximately scales with the spin…
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Amorphous silicon-nitrogen thin films doped with rare-earth elements (a-SiN:RE; RE = Y, La, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er, Yb, and Lu) have been prepared by co-sputtering and studied by means of electron spin resonance (ESR). It was found that the neutral dangling-bond density [D0] of a-SiN films decreases with the presence of magnetic REs and the drop of [D0] approximately scales with the spin and/or the de Gennes factor of each rare-earth element. These results suggest that a strong exchange-like interaction, H=J(RE-D0)S(RE).S(D0), between the spin of the magnetic REs and D0 may be responsible for this behaviour, similarly to the decrease of Tc in RE-doped superconductors.
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Submitted 10 September, 2002;
originally announced September 2002.
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Magnetic Properties of a-Si films doped with rare-earth elements
Authors:
M. S. Sercheli,
C. Rettori,
A. R. Zanatta
Abstract:
Amorphous silicon films doped with Y, La, Gd, Er, and Lu rare-earth elements (a-Si:RE) have been prepared by co-sputtering and studied by means of electron spin resonance (ESR), dc-magnetization, ion beam analysis, optical transmission, and Raman spectroscopy. For comparison the magnetic properties of laser-crystallized and hydrogenated a-Si:RE films were also studied. It was found that the rare…
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Amorphous silicon films doped with Y, La, Gd, Er, and Lu rare-earth elements (a-Si:RE) have been prepared by co-sputtering and studied by means of electron spin resonance (ESR), dc-magnetization, ion beam analysis, optical transmission, and Raman spectroscopy. For comparison the magnetic properties of laser-crystallized and hydrogenated a-Si:RE films were also studied. It was found that the rare-earth species are incorporated in the a-Si:RE films in the RE3+ form and that the RE-doping depletes the neutral dangling bonds (D0) density. The reduction of D0 density is significantly larger for the magnetic REs (Gd3+ and Er3+) than for the non-magnetic ones (Y3+, La3+, Lu3+). These results are interpreted in terms of a strong exchange-like interaction, J RE-DB SRE SDB, between the spin of the magnetic REs and that of the D0. All our Gd-doped Si films showed basically the same broad ESR Gd3+ resonance (DHpp ~ 850 Oe) at g ~ 2.01, suggesting the formation of a rather stable RE-Si complex in these films.
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Submitted 10 September, 2002;
originally announced September 2002.
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Unconventional Metallic Magnetism in LaCrSb{3}
Authors:
E. Granado,
H. Martinho,
M. S. Sercheli,
P. G. Pagliuso,
D. D. Jackson,
M. Torelli,
J. W. Lynn,
C. Rettori,
Z. Fisk,
S. B. Oseroff
Abstract:
Neutron-diffraction measurements in LaCrSb{3} show a coexistence of ferromagnetic and antiferromagnetic sublattices below Tc=126 K, with ordered moments of 1.65(4) and 0.49(4) Bohr magnetons per formula unit, respectively (T=10 K), and a spin reorientation transition at ~95 K. No clear peak or step was observed in the specific heat at Tc. Coexisting localized and itinerant spins are suggested.
Neutron-diffraction measurements in LaCrSb{3} show a coexistence of ferromagnetic and antiferromagnetic sublattices below Tc=126 K, with ordered moments of 1.65(4) and 0.49(4) Bohr magnetons per formula unit, respectively (T=10 K), and a spin reorientation transition at ~95 K. No clear peak or step was observed in the specific heat at Tc. Coexisting localized and itinerant spins are suggested.
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Submitted 26 July, 2002;
originally announced July 2002.
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Evidence for internal field in graphite: A conduction electron spin resonance study
Authors:
M. S. Sercheli,
Y. Kopelevich,
R. Ricardo da Silva,
J. H. S. Torres,
C. Rettori
Abstract:
We report conduction electron spin resonance measurements performed on highly oriented pyrolitic graphite samples between 10 K and 300 K using S (f = 4 GHz), X (f = 9.4 GHz), and Q (f = 34.4 GHz) microwave bands for the external dc-magnetic field applied parallel (H || c) and perpendicular (H perp c) to the sample hexagonal c-axis. The results obtained in the H || c geometry are interpreted in t…
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We report conduction electron spin resonance measurements performed on highly oriented pyrolitic graphite samples between 10 K and 300 K using S (f = 4 GHz), X (f = 9.4 GHz), and Q (f = 34.4 GHz) microwave bands for the external dc-magnetic field applied parallel (H || c) and perpendicular (H perp c) to the sample hexagonal c-axis. The results obtained in the H || c geometry are interpreted in terms of the presence of an effective internal ferromagnetic-like field Heff-int(T,H) that increases as the temperature decreases and the applied dc-magnetic field increases. We associate the occurrence of the Heff-int(T,H) with the field-induced metal-insulator transition in graphite and discuss its origin in the light of relevant theoretical models.
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Submitted 12 June, 2001;
originally announced June 2001.
