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Quantum dot transistors based on CVD-grown graphene nano islands
Authors:
Takumi Seo,
Motoya Shinozaki,
Akiko Tada,
Yuta Kera,
Shunsuke Yashima,
Kosuke Noro,
Takeshi Kumasaka,
Azusa Utsumi,
Takashi Matsumoto,
Yoshiyuki Kobayashi,
Tomohiro Otsuka
Abstract:
Graphene nanoislands (GNIs) are one of the promising building blocks for quantum devices owing to their unique potential. However, direct electrical measurements of GNIs have been challenging due to the requirement of metal catalysts in typical synthesis methods. In this study, we demonstrate electrical transport measurements of GNIs by using microwave plasma chemical vapor deposition, which is a…
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Graphene nanoislands (GNIs) are one of the promising building blocks for quantum devices owing to their unique potential. However, direct electrical measurements of GNIs have been challenging due to the requirement of metal catalysts in typical synthesis methods. In this study, we demonstrate electrical transport measurements of GNIs by using microwave plasma chemical vapor deposition, which is a catalyst-free method to deposit graphene directly on SiO$_2$ substrates. This approach enables the fabrication of metal electrodes on GNIs, allowing us to measure their quantum transport properties. At low temperatures, one of our devices shows clear Coulomb diamonds with twofold degeneracy, indicating the formation of quantum dots and the vanishing of valley degeneracy. The charge state of the GNI is also modulated by a local side gate, and the tunneling coupling between leads and quantum dots is modulated by changing contact area and metal materials. These results provide device design guidelines toward GNI-based quantum devices for next-generation computing.
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Submitted 9 June, 2025;
originally announced June 2025.
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RFSoC-based radio-frequency reflectometry in gate-defined bilayer graphene quantum devices
Authors:
Motoya Shinozaki,
Tomoya Johmen,
Aruto Hosaka,
Takumi Seo,
Shunsuke Yashima,
Akitomi Shirachi,
Kosuke Noro,
Shoichi Sato,
Takashi Kumasaka,
Tsuyoshi Yoshida,
Tomohiro Otsuka
Abstract:
Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for scaling up these devices. Here, radio-frequency system-on-chip (RFSoC) technology is exepcted for a promising approach that combines scalability with flexibility.…
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Quantum computers require both scalability and high performance for practical applications. While semiconductor quantum dots are promising candidates for quantum bits, the complexity of measurement setups poses an important challenge for scaling up these devices. Here, radio-frequency system-on-chip (RFSoC) technology is exepcted for a promising approach that combines scalability with flexibility. In this paper, we demonstrate RF reflectometry in gate-defined bilayer graphene quantum devices using RFSoC-based measurement architecture. By controlling the confinement strength through gate voltages, we achieve both Fabry-Pérot interferometer and quantum dot operations in a single device. Although impedance matching conditions currently limit the measurement sensitivity, we identify pathways for optimization through tunnel barrier engineering and resonator design. These results represent a step toward integrating high-bandwidth measurements with scalable quantum devices.
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Submitted 21 February, 2025;
originally announced February 2025.
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Graphene-enabled, directed nanomaterial placement from solution for large-scale device integration
Authors:
Michael Engel,
Damon B. Farmer,
Jaione Tirapu Azpiroz,
Jung-Woo T. Seo,
Joohoon Kang,
Phaedon Avouris,
Mark C. Hersam,
Ralph Krupke,
Mathias Steiner
Abstract:
Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface functionalization have a drawback where undesired chemical modifications can occur and deteriorate the deposited material. The application of electric-…
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Controlled placement of nanomaterials at predefined locations with nanoscale precision remains among the most challenging problems that inhibit their large-scale integration in the field of semiconductor process technology. Methods based on surface functionalization have a drawback where undesired chemical modifications can occur and deteriorate the deposited material. The application of electric-field assisted placement techniques eliminates the element of chemical treatment; however, it requires an incorporation of conductive placement electrodes that limit the performance, scaling, and density of integrated electronic devices. Here, we report a method for electric-field assisted placement of solution-processed nanomaterials by using large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, then are removed without residue once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas larger than 1mm2. In order to demonstrate the broad applicability, we have assembled representative zero-, one-, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. This graphene-based placement technique affords nanoscale resolution at wafer scale, and could enable mass manufacturing of nanoelectronics and optoelectronics involving a wide range of nanomaterials prepared via solution-based approaches.
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Submitted 21 February, 2018;
originally announced February 2018.
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Large-area, low-voltage, anti-ambipolar heterojunctions from solution-processed semiconductors
Authors:
Deep Jariwala,
Vinod K. Sangwan,
Jung-Woo Ted Seo,
Weichao Xu,
Jeremy Smith,
Chris H. Kim,
Lincoln J. Lauhon,
Tobin J. Marks,
Mark C. Hersam
Abstract:
The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials prese…
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The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit anti-ambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.
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Submitted 13 December, 2014;
originally announced December 2014.
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High-frequency performance of scaled carbon nanotube array field-effect transistors
Authors:
Mathias Steiner,
Michael Engel,
Yu-Ming Lin,
Yanqing Wu,
Keith Jenkins,
Damon B. Farmer,
Jefford J. Humes,
Nathan L. Yoder,
Jung-Woo T. Seo,
Alexander A. Green,
Mark C. Hersam,
Ralph Krupke,
Phaedon Avouris
Abstract:
We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15…
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We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.
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Submitted 3 August, 2012;
originally announced August 2012.
