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Multifunctional 2d infrared photodetectors enabled by asymmetric singular metasurfaces
Authors:
Valentin Semkin,
Aleksandr Shabanov,
Kirill Kapralov,
Mikhail Kashchenko,
Alexander Sobolev,
Ilya Mazurenko,
Vladislav Myltsev,
Egor Nikulin,
Alexander Chernov,
Ekaterina Kameneva,
Alexey Bocharov,
Dmitry Svintsov
Abstract:
Two-dimensional materials offering ultrafast photoresponse suffer from low intrinsic absorbance, especially in the mid-infrared wavelength range. Challenges in 2d material doping further complicate the creation of light-sensitive $p-n$ junctions. Here, we experimentally demonstrate a graphene-based infrared detector with simultaneously enhanced absorption and strong structural asymmetry enabling z…
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Two-dimensional materials offering ultrafast photoresponse suffer from low intrinsic absorbance, especially in the mid-infrared wavelength range. Challenges in 2d material doping further complicate the creation of light-sensitive $p-n$ junctions. Here, we experimentally demonstrate a graphene-based infrared detector with simultaneously enhanced absorption and strong structural asymmetry enabling zero-bias photocurrent. A key element for those properties is an asymmetric singular metasurface (ASMS) atop graphene with keen metal wedges providing singular enhancement of local absorbance. The ASMS geometry predefines extra device functionalities. The structures with connected metallic wedges demonstrate polarization ratios up to 200 in a broad range of carrier densities at a wavelength of 8.6 $μ$m. The structures with isolated wedges display gate-controlled switching between polarization-discerning and polarization-stable photoresponse, a highly desirable yet scarce property for polarized imaging.
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Submitted 6 May, 2025; v1 submitted 10 November, 2024;
originally announced November 2024.
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Zero-bias photodetection in 2d materials via geometric design of contacts
Authors:
Valentin A. Semkin,
Aleksandr V. Shabanov,
Dmitry A. Mylnikov,
Mikhail A. Kashchenko,
Ivan K. Domaratskiy,
Sergey S. Zhukov,
Dmitry A. Svintsov
Abstract:
Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ doping being a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in 2d material flakes exploiting the geometrical non-equivalence of source and drain contacts. As a p…
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Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ doping being a technologically complex process. Here, we propose an alternative approach to achieve zero-bias photocurrent in 2d material flakes exploiting the geometrical non-equivalence of source and drain contacts. As a prototypical example, we equip a square-shaped flake of PdSe$_2$ with mutually orthogonal metal leads. Upon uniform illumination with linearly-polarized light, the device demonstrates non-zero photocurrent which flips its sign upon 90$^\circ$ polarization rotation. The origin of zero-bias photocurrent lies in polarization-dependent lightning-rod effect. It enhances the electromagnetic field at one contact from the orthogonal pair, and selectively activates the internal photoeffect at the respective metal-PdSe$_2$ Schottky junction. The proposed technology of contact engineering can be extended to arbitrary 2d materials and detection of both polarized and natural light.
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Submitted 29 March, 2023;
originally announced March 2023.
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Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
Authors:
Dmitry Mylnikov,
Elena I. Titova,
Mikhail A. Kashchenko,
Ilya V. Safonov,
Sergey S. Zhukov,
Valentin A. Semkin,
Kostya S. Novoselov,
Denis A. Bandurin,
Dmitry A. Svintsov
Abstract:
Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gappe…
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Photoconductivity of novel materials is the key property of interest for design of photodetectors, optical modulators, and switches. Despite the photoconductivity of most novel 2d materials has been studied both theoretically and experimentally, the same is not true for 2d p-n junctions that are necessary blocks of most electronic devices. Here, we study the sub-terahertz photocoductivity of gapped bilayer graphene with electrically-induced p-n junctions. We find a strong positive contribution from junctions to resistance, temperature resistance coefficient and photo-resistivity at cryogenic temperatures T ~ 20 K. The contribution to these quantities from junctions exceeds strongly the bulk values at uniform channel doping even at small band gaps ~ 10 meV. We further show that positive junction photoresistance is a hallmark of interband tunneling, and not of intra-band thermionic conduction. Our results point to the possibility of creating various interband tunneling devices based on bilayer graphene, including steep-switching transistors and selective sensors.
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Submitted 8 December, 2022;
originally announced December 2022.
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Polarization-resolving graphene-based mid-infrared detector
Authors:
Valentin Semkin,
Dmitry Mylnikov,
Elena Titova,
Sergey Zhukov,
Dmitry Svintsov
Abstract:
The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable external polarizers. Here, we experimentally demonstrate the feasibility to resolve the polarization of mid-infrared light with a single chemical-vapor-deposited gr…
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The ability to resolve the polarization of light with on-chip devices represents an urgent problem in optoelectronics. The detectors with polarization resolution demonstrated so far mostly require multiple oriented detectors or movable external polarizers. Here, we experimentally demonstrate the feasibility to resolve the polarization of mid-infrared light with a single chemical-vapor-deposited graphene-channel device with dissimilar metal contacts. This possibility stems from an unusual dependence of photoresponse at graphene-metal junctions on gate voltage and polarization angle. Namely, there exist certain gate voltages providing the polarization-insensitive signal; operation at these voltages can be used for power calibration of the detector. At other gate voltages, the detector features very strong polarization sensitivity, with the ratio of signals for two orthogonal polarizations reaching ~10. Operation at these voltages can provide information about polarization angles, after the power calibration. We show that such unusual gate- and polarization-dependence of photosignal can appear upon competition of isotropic and anisotropic photovoltage generation pathways and discuss the possible physical candidates.
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Submitted 23 March, 2022;
originally announced March 2022.
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Bandwidth-controlled Mott transition in $κ-(BEDT-TTF)_2 Cu [N(CN)_2] Br_x Cl_{1-x}$ I. Optical studies of localized charge excitations
Authors:
Daniel Faltermeier,
Jakob Barz,
Michael Dumm,
Natalia Drichko,
Martin Dressel,
Boris Petrov,
Victor Semkin,
Rema Vlasova,
Cécile Meziere,
Patrick Batail
Abstract:
Infrared reflection measurements of the half-filled two-dimensional organic conductors $κ$-(BEDT-TTF)$_2$Cu[N(CN)$_{2}$]Br$_{x}$Cl$_{1-x}$ were performed as a function of temperature ($5 {\rm K}<T<300$ K) and Br-substitution ($x=0%$, 40%, 73%, 85%, and 90%) in order to study the metal-insulator transition. We can distinguish absorption processes due to itinerant and localized charge carriers. Th…
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Infrared reflection measurements of the half-filled two-dimensional organic conductors $κ$-(BEDT-TTF)$_2$Cu[N(CN)$_{2}$]Br$_{x}$Cl$_{1-x}$ were performed as a function of temperature ($5 {\rm K}<T<300$ K) and Br-substitution ($x=0%$, 40%, 73%, 85%, and 90%) in order to study the metal-insulator transition. We can distinguish absorption processes due to itinerant and localized charge carriers. The broad mid-infrared absorption has two contributions: transitions between the two Hubbard bands and intradimer excitations from the charges localized on the (BEDT-TTF)$_2$ dimer. Since the latter couple to intramolecular vibrations of BEDT-TTF, the analysis of both electronic and vibrational features provides a tool to disentangle these contributions and to follow their temperature and electronic-correlations dependence. Calculations based on the cluster model support our interpretation.
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Submitted 13 March, 2007; v1 submitted 3 August, 2006;
originally announced August 2006.
