-
Effect of a hybrid transition moment on Stark-modulated photon echoes in Er$^{3+}$:Y$_2$SiO$_5$
Authors:
Rose L. Ahlefeldt,
Alexey Lyasota,
Jodie Smith,
Jinliang Ren,
Matthew J. Sellars
Abstract:
The 1538 nm ${}^4$I$_{15/2}$ - ${}^4$I$_{13/2}$ transition of Er$^{3+}$ has an unusual hybrid electric-magnetic dipole character, and signatures of the hybrid moment can be expected in coherent transient measurements. Here, we investigate the effect of the hybrid moment in both sites of Er$^{3+}$:Y$_2$SiO$_5$ on Stark-modulated photon echo measurements, showing that it results in a reduction of vi…
▽ More
The 1538 nm ${}^4$I$_{15/2}$ - ${}^4$I$_{13/2}$ transition of Er$^{3+}$ has an unusual hybrid electric-magnetic dipole character, and signatures of the hybrid moment can be expected in coherent transient measurements. Here, we investigate the effect of the hybrid moment in both sites of Er$^{3+}$:Y$_2$SiO$_5$ on Stark-modulated photon echo measurements, showing that it results in a reduction of visibility of the modulated signal as well as phase and polarization shifts. We interpret these effects using a simple optical Bloch equation model, showing that site 1 has a strongly mixed moment and site 2 is predominantly magnetic dipole. We discuss the implications of the hybrid moment for quantum information applications of quantum memories. We also use the echo measurements to extract the Stark shift of the optical transition along three orthogonal directions, finding values between 10.50 and 11.93 kHz/(V/cm) for site 1 and 1.61 and 15.35 kHz/(V/cm) for site 2. We observe a modification of the Zeeman shift by the electric field in both sites and discuss how this may be used to electrically control Er$^{3+}$ spin qubits.
△ Less
Submitted 21 June, 2023;
originally announced June 2023.
-
Negative refractive index in dielectric crystals containing stoichiometric rare-earth ions
Authors:
Matthew C. Berrington,
Henrik M. Rønnow,
Matthew J. Sellars,
Rose L. Ahlefeldt
Abstract:
We investigate the prospect of achieving negative permittivity and permeability at optical frequencies in a dielectric crystal containing stoichiometric rare-earth ions. We derive the necessary transition linewidth, ion density and electric and magnetic oscillator strengths using a simplified model of non-interacting dipoles. We identify Erbium crystals in a magnetically ordered phase as the most…
▽ More
We investigate the prospect of achieving negative permittivity and permeability at optical frequencies in a dielectric crystal containing stoichiometric rare-earth ions. We derive the necessary transition linewidth, ion density and electric and magnetic oscillator strengths using a simplified model of non-interacting dipoles. We identify Erbium crystals in a magnetically ordered phase as the most promising material to meet these conditions, and describe initial optical measurements of two potential candidates, \ercl{} and ${}^7$\lierf{}, which display linewidths of 3~GHz and 250~MHz, respectively. The properties of ${}^7$\lierf{} satisfied our criterion for negative permeability.
△ Less
Submitted 5 May, 2022;
originally announced May 2022.
-
Complete crystal field calculation of Zeeman-hyperfine splittings in europium
Authors:
Kieran M. Smith,
Michael F. Reid,
Matthew J. Sellars,
Rose L. Ahlefeldt
Abstract:
Computational crystal-field models have provided consistent models of both electronic and Zeeman-hyperfine structure for several rare earth ions. These techniques have not yet been applied to the Zeeman-hyperfine structure of Eu$^{3+}$ because modeling the structure of the $J=0$ singlet levels in Eu$^{3+}$ requires inclusion of the commonly omitted lattice electric quadrupole and nuclear Zeeman in…
▽ More
Computational crystal-field models have provided consistent models of both electronic and Zeeman-hyperfine structure for several rare earth ions. These techniques have not yet been applied to the Zeeman-hyperfine structure of Eu$^{3+}$ because modeling the structure of the $J=0$ singlet levels in Eu$^{3+}$ requires inclusion of the commonly omitted lattice electric quadrupole and nuclear Zeeman interactions. Here, we include these terms in a computational model to fit the crystal field levels and the Zeeman-hyperfine structure of the $^7F_0$ and $^5D_0$ states in three Eu$^{3+}$ sites: the C$_{4v}$ and C$_{3v}$ sites in CaF$_2$ and the C$_2$ site in EuCl$_3$.6H$_2$O. Close fits are obtained for all three sites which are used to resolve ambiguities in previously published parameters, including quantifying the anomalously large crystal-field-induced state mixing in the C$_{3v}$ site and determining the signs of Zeeman-hyperfine parameters in all three sites. We show that this model allows accurate prediction of properties for Eu$^{3+}$ important for quantum information applications of these ions, such as relative transition strengths. The model could be used to improve crystal field calculations for other non-Kramers singlet states. We also present a spin Hamiltonian formalism without the normal assumption of no $J$ mixing, suitable for other rare earth ion energy levels where this effect is important.
△ Less
Submitted 27 October, 2021; v1 submitted 8 October, 2021;
originally announced October 2021.
-
Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection
Authors:
Ian R. Berkman,
Alexey Lyasota,
Gabriele G. de Boo,
John G. Bartholomew,
Brett C. Johnson,
Jeffrey C. McCallum,
Bin-Bin Xu,
Shouyi Xie,
Rose L. Ahlefeldt,
Matthew J. Sellars,
Chunming Yin,
Sven Rogge
Abstract:
We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonanc…
▽ More
We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonances have been extracted, showing that 5% of the resonances are within 1 GHz of our electrically detected resonances and that the optical lifetimes range from 0.5 ms up to 1.5 ms. We observed inhomogeneous broadening of less than 400 MHz and an upper bound on the homogeneous linewidth of 1.4 MHz and 0.75 MHz for two separate resonances, which is a reduction of more than an order of magnitude observed to date. These narrow optical transition properties show that Er in Si is an excellent candidate for future quantum information and communication applications.
△ Less
Submitted 16 August, 2021;
originally announced August 2021.
-
High resolution spectroscopy of individual erbium ions in strong magnetic fields
Authors:
Gabriele G. de Boo,
Chunming Yin,
Miloš Rančić,
Brett C. Johnson,
Jeffrey C. McCallum,
Matthew Sellars,
Sven Rogge
Abstract:
In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneously. We demonstrate that this high spectral resolution technique can be exploited to observe interactions typically unresolvable in silicon using conventional spectroscopy techniques due to inhomogeneous broadening. In par…
▽ More
In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneously. We demonstrate that this high spectral resolution technique can be exploited to observe interactions typically unresolvable in silicon using conventional spectroscopy techniques due to inhomogeneous broadening. In particular, we resolve the Zeeman splitting of the 4I15/2 ground and 4I13/2 excited state separately and in strong magnetic fields we observe the anti-crossings between Zeeman components of different crystal field levels. We discuss the use of this electronic detection technique in identifying the symmetry and structure of erbium sites in silicon.
△ Less
Submitted 12 December, 2019;
originally announced December 2019.
-
Diamond nano-pillar arrays for quantum microscopy of neuronal signals
Authors:
Liam Hanlon,
Vini Gautam,
James D. A. Wood,
Prithvi Reddy,
Michael S. J. Barson,
Marika Niihori,
Alexander R. J. Silalahi,
Ben Corry,
Joerg Wrachtrup,
Matthew J. Sellars,
Vincent R. Daria,
Patrick Maletinsky,
Gregory J. Stuart,
Marcus W. Doherty
Abstract:
Modern neuroscience is currently limited in its capacity to perform long term, wide-field measurements of neuron electromagnetics with nanoscale resolution. Quantum microscopy using the nitrogen vacancy centre (NV) can provide a potential solution to this problem with electric and magnetic field sensing at nano-scale resolution and good biocompatibility. However, the performance of existing NV sen…
▽ More
Modern neuroscience is currently limited in its capacity to perform long term, wide-field measurements of neuron electromagnetics with nanoscale resolution. Quantum microscopy using the nitrogen vacancy centre (NV) can provide a potential solution to this problem with electric and magnetic field sensing at nano-scale resolution and good biocompatibility. However, the performance of existing NV sensing technology does not allow for studies of small mammalian neurons yet. In this paper, we propose a solution to this problem by engineering NV quantum sensors in diamond nanopillar arrays. The pillars improve light collection efficiency by guiding excitation/emission light, which improves sensitivity. More importantly, they also improve the size of the signal at the NV by removing screening charges as well as coordinating the neuron growth to the tips of the pillars where the NV is located. Here, we provide a growth study to demonstrate coordinated neuron growth as well as the first simulation of nano-scopic neuron electric and magnetic fields to assess the enhancement provided by the nanopillar geometry.
△ Less
Submitted 25 January, 2019;
originally announced January 2019.
-
NV- - N+ pair centre in 1b diamond
Authors:
Neil B. Manson,
Morgan Hedges,
Michael S,
J. Barson,
Rose Ahlefeldt,
Marcus W. Doherty,
Matthew J. Sellars,
Hiroshi Abe,
Takeshi Ohshima
Abstract:
The study establishes that the degree of optically induced spin polarization that can be achieved for NV$^- $in 1b diamond is limited by the concentration of single substitutional nitrogen, N$^0$ . The polarization of the individual NV centres in the diamond is dependent on the separation of the NV$^-$ and the nitrogen donor. When the NV$^-$ - N$^+$ pair separation is large the properties of the p…
▽ More
The study establishes that the degree of optically induced spin polarization that can be achieved for NV$^- $in 1b diamond is limited by the concentration of single substitutional nitrogen, N$^0$ . The polarization of the individual NV centres in the diamond is dependent on the separation of the NV$^-$ and the nitrogen donor. When the NV$^-$ - N$^+$ pair separation is large the properties of the pair will be as for single sites and a high degree of spin polarization attainable. When the separation decreases the emission is reduced, the lifetime shortened and the spin polarization downgraded. The deterioration occurs as a consequence of electron tunneling in the excited state from NV$^-$ to N$^+$ and results in an optical cycle that includes NV$^0$. The tunneling process is linear in optical excitation and more prevalent the closer the N$^+$ is to the NV$^-$ centre. However, the separation between the NV$^-$ and its donor N$^+$ can be effected by light through the excitation of NV$^-$ and/or ionization of N$^0$. The optical excitation that creates the spin polarization can also modify the sample properties and during excitation creates charge dynamics. The consequence is that the magnitude of spin polarization, the spin relaxation and coherence times T$_1$ and T$_2$ have a dependence on the nitrogen concentration and on the excitation wavelength. The adjacent N$^+$ gives an electric field that Stark shifts the NV$^-$ transitions and for an ensemble results in line broadening. It is observation of changes of these Stark induced effects that allow the variation in NV$^-$ - N$^+$ separation to be monitored. Spectroscopic measurements including that of the varying line widths are central to the study. They are made at low temperatures and include extensive measurements of the NV$^-$ optical transition at 637 nm, the infrared transition at 1042 nm and ODMR at 2.87 GHz.
△ Less
Submitted 16 October, 2018; v1 submitted 23 July, 2018;
originally announced July 2018.
-
Single rare-earth ions as atomic-scale probes in ultra-scaled transistors
Authors:
Qi Zhang,
Guangchong Hu,
Gabriele G. de Boo,
Milos Rancic,
Brett C. Johnson,
Jeffrey C. McCallum,
Jiangfeng Du,
Matthew J. Sellars,
Chunming Yin,
Sven Rogge
Abstract:
Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local…
▽ More
Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local electric field and strain. Here we study the spectral response of single erbium ions to applied electric field and strain in a silicon ultra-scaled transistor. Stark shifts induced by both the overall electric field and the local charge environment are observed. Further, changes in strain smaller than $3\times 10^{-6}$ are detected, which is around two orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for non-destructive 3D mapping of the local strain and electric field in the channel of ultra-scaled transistors, using the single erbium ions as ultra-sensitive atomic probes.
△ Less
Submitted 5 March, 2018;
originally announced March 2018.
-
Ultra-narrow optical inhomogeneous linewidth in a stoichiometric rare earth crystal
Authors:
R. L. Ahlefeldt,
M. R. Hush,
M. J. Sellars
Abstract:
We have obtained a low optical inhomogeneous linewidth of 25 MHz in the stoichiometric rare earth crystal EuCl3 .6H2 O by isotopically purifying the crystal in 35 Cl. With this linewidth, an important limit for stoichiometric rare earth crystals is surpassed: the hyperfine structure of 153Eu is spectrally resolved, allowing the whole population of 153Eu3+ ions to be prepared in the same hyperfine…
▽ More
We have obtained a low optical inhomogeneous linewidth of 25 MHz in the stoichiometric rare earth crystal EuCl3 .6H2 O by isotopically purifying the crystal in 35 Cl. With this linewidth, an important limit for stoichiometric rare earth crystals is surpassed: the hyperfine structure of 153Eu is spectrally resolved, allowing the whole population of 153Eu3+ ions to be prepared in the same hyperfine state using hole burning techniques. This material also has a very high optical density and can have long coherence times when deuterated. This combination of properties offers new prospects for quantum information applications. We consider two of these, quantum memories and quantum many body studies. We detail the improvements in the performance of current memory protocols possible in these high optical depth crystals, and how certain memory protocols, such as off-resonant Raman memories, can be implemented for the first time in a solid state system. We explain how the strong excitation-induced interactions observed in this material resemble those seen in Rydberg systems, and describe how these interactions can lead to quantum many-body states that could be observed using standard optical spectroscopy techniques.
△ Less
Submitted 25 July, 2016; v1 submitted 19 January, 2016;
originally announced January 2016.
-
Towards a room-temperature spin quantum bus in diamond via optical spin injection, transport and detection
Authors:
Marcus W. Doherty,
Carlos A. Meriles,
Audrius Alkauskas,
Helmut Fedder,
Matthew J. Sellars,
Neil B. Manson
Abstract:
Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy (NV) center in diamond has been used to realize small-scale quantum information processing (QIP) and quantum sensing under ambient conditions. A major barrier in the development of large-scale QIP in diamond is the connection of NV spin registers by a quantum bus at room temperature. Given that diamond…
▽ More
Diamond is a proven solid-state platform for spin-based quantum technology. The nitrogen-vacancy (NV) center in diamond has been used to realize small-scale quantum information processing (QIP) and quantum sensing under ambient conditions. A major barrier in the development of large-scale QIP in diamond is the connection of NV spin registers by a quantum bus at room temperature. Given that diamond is expected to be an ideal spin transport material, the coherent transport of spin directly between the spin registers offers a potential solution. Yet, there has been no demonstration of spin transport in diamond due to difficulties in achieving spin injection and detection via conventional methods. Here, we exploit detailed knowledge of the paramagnetic defects in diamond to identify novel mechanisms to achieve spin injection, transport and detection in diamond at room temperature. Having identified these mechanisms, we explore how they may be combined to realise an on-chip spin quantum bus.
△ Less
Submitted 27 November, 2015;
originally announced November 2015.
-
The observation of photon echoes from evanescently coupled rare-earth ions in a planar waveguide
Authors:
Sara Marzban,
John G. Bartholomew,
Stephen Madden,
Khu Vu,
Matthew J. Sellars
Abstract:
We report the measurement of the inhomogeneous linewidth, homogeneous linewidth and spin state lifetime of Pr3+ ions in a novel waveguide architecture. The TeO2 slab waveguide deposited on a bulk Pr3+:Y2SiO5 crystal allows the 3H4 - 1D2 transition of Pr3+ ions to be probed by the optical evanescent field that extends into the substrate. The 2 GHz inhomogeneous linewidth, the optical coherence time…
▽ More
We report the measurement of the inhomogeneous linewidth, homogeneous linewidth and spin state lifetime of Pr3+ ions in a novel waveguide architecture. The TeO2 slab waveguide deposited on a bulk Pr3+:Y2SiO5 crystal allows the 3H4 - 1D2 transition of Pr3+ ions to be probed by the optical evanescent field that extends into the substrate. The 2 GHz inhomogeneous linewidth, the optical coherence time of 70 +- 5 us, and the spin state lifetime of 9.8 +- 0.3 s indicate that the properties of ions interacting with the waveguide mode are consistent with those of bulk ions. This result establishes the foundation for large, integrated and high performance rare-earth-ion quantum systems based on a waveguide platform.
△ Less
Submitted 1 March, 2015;
originally announced March 2015.
-
A method for assigning satellite lines to crystallographic sites in rare earth crystals
Authors:
Rose L. Ahlefeldt,
Neil B. Manson,
Wayne D. Hutchison,
Matthew J. Sellars
Abstract:
We describe an experimental technique for associating the satellite lines in a rare earth optical spectrum caused by a defect with the rare earth ions in crystal sites around that defect. This method involves measuring the hyperfine splitting caused by a magnetic dipole-dipole interaction between host ions and a magnetic defect. The method was applied to Ce3+:EuCl3.6H2O to assign 13 of the outermo…
▽ More
We describe an experimental technique for associating the satellite lines in a rare earth optical spectrum caused by a defect with the rare earth ions in crystal sites around that defect. This method involves measuring the hyperfine splitting caused by a magnetic dipole-dipole interaction between host ions and a magnetic defect. The method was applied to Ce3+:EuCl3.6H2O to assign 13 of the outermost 22 satellite lines to sites. The assignments show that the optical shift of a satellite line is loosely dependent on the distance to the dopant. The interaction between host and dopant ions is purely dipole-dipole at distances greater than 7 Angstroms, with an additional contribution, likely superexchange, at distances less than 7 Angstroms.
△ Less
Submitted 5 July, 2013; v1 submitted 2 July, 2013;
originally announced July 2013.
-
Optical addressing of an individual erbium ion in silicon
Authors:
Chunming Yin,
Milos Rancic,
Gabriele G. de Boo,
Nikolas Stavrias,
Jeffrey C. McCallum,
Matthew J. Sellars,
Sven Rogge
Abstract:
The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond u…
▽ More
The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond using optical readout. A spin readout fidelity of about 90% has been demonstrated with both electrical readout and optical readout, however, the thermal limitations of the electrical readout and the poor photon collection efficiency of the optical readout hinder achieving the high fidelity required for quantum information applications. Here we demonstrate a hybrid approach using optical excitation to change the charge state of the defect centre in a silicon-based SET, conditional on its spin state, and then detecting this change electrically. The optical frequency addressing in high spectral resolution conquers the thermal broadening limitation of the previous electrical readout and charge sensing avoids the difficulties of efficient photon collection. This is done with erbium in silicon and has the potential to enable new architectures for quantum information processing devices and to dramatically increase the range of defect centres that can be exploited. Further, the efficient electrical detection of the optical excitation of single sites in silicon is a major step in developing an interconnect between silicon and optical based quantum computing technologies.
△ Less
Submitted 9 April, 2013; v1 submitted 8 April, 2013;
originally announced April 2013.
-
Time-averaging within the excited state of the nitrogen-vacancy centre in diamond
Authors:
L J Rogers,
R L McMurtrie,
S Armstrong,
M J Sellars,
N B Manson
Abstract:
The emission intensity of diamond samples containing nitrogen-vacancy centres are measured as a function of magnetic field along a <111> direction for various temperatures. At low temperatures the responses are sample and stress dependent and can be modeled in terms of the previous understanding of the 3E excited state fine structure which is strain dependent. At room temperature the responses a…
▽ More
The emission intensity of diamond samples containing nitrogen-vacancy centres are measured as a function of magnetic field along a <111> direction for various temperatures. At low temperatures the responses are sample and stress dependent and can be modeled in terms of the previous understanding of the 3E excited state fine structure which is strain dependent. At room temperature the responses are largely sample and stress independent, and modeling involves invoking a strain independent excited state with a single zero field splitting of 1.42 GHz. The change in behaviour is attributed to a temperature dependent averaging process over the components of the excited state orbital doublet. It decouples orbit and spin and at high temperature the spin levels become independent of any orbit splitting. Thus the models can be reconciled and the parameters for low and high temperatures are shown to be consistent.
△ Less
Submitted 16 February, 2009; v1 submitted 12 February, 2009;
originally announced February 2009.
-
New infrared emission of the NV centre in diamond: Zeeman and uniaxial stress studies
Authors:
L. J. Rogers,
S. Armstrong,
M. J. Sellars,
N. B. Manson
Abstract:
An emission band in the infrared is shown to be associated with a transition within the negative nitrogen-vacancy center in diamond. The band has a zero-phonon line at 1046 nm, and uniaxial stress and magnetic field measurements indicate that the emission is associated with a transition between 1E and 1A1 singlet levels. Inter-system crossing to these singlets causes the spin polarisation that m…
▽ More
An emission band in the infrared is shown to be associated with a transition within the negative nitrogen-vacancy center in diamond. The band has a zero-phonon line at 1046 nm, and uniaxial stress and magnetic field measurements indicate that the emission is associated with a transition between 1E and 1A1 singlet levels. Inter-system crossing to these singlets causes the spin polarisation that makes the NV- centre attractive for quantum information processing, and the infrared emission band provides a new avenue for using the centre in such applications.
△ Less
Submitted 5 June, 2008;
originally announced June 2008.
-
The nitrogen-vacancy center in diamond re-visited
Authors:
N. B. Manson,
J. P. Harrison,
M. J. Sellars
Abstract:
Symmetry considerations are used in presenting a model of the electronic structure and the associated dynamics of the nitrogen-vacancy center in diamond. The model accounts for the occurrence of optically induced spin polarization, for the change of emission level with spin polarization and for new measurements of transient emission. The rate constants given are in variance to those reported pre…
▽ More
Symmetry considerations are used in presenting a model of the electronic structure and the associated dynamics of the nitrogen-vacancy center in diamond. The model accounts for the occurrence of optically induced spin polarization, for the change of emission level with spin polarization and for new measurements of transient emission. The rate constants given are in variance to those reported previously.
△ Less
Submitted 5 June, 2006; v1 submitted 16 January, 2006;
originally announced January 2006.
-
Phase-dependent decoherence of optical transitions in Pr3+:LaF3 in the presence of a driving field
Authors:
G. J. Pryde,
M. J. Sellars,
N. B. Manson
Abstract:
The decoherence times of orthogonally phased components of the optical transition dipole moment in a two-level system have been observed to differ by an order of magnitude. This phase anisotropy is observed in coherent transient experiments where an optical driving field is present during extended periods of decoherence. The decoherence time of the component of the dipole moment in phase with th…
▽ More
The decoherence times of orthogonally phased components of the optical transition dipole moment in a two-level system have been observed to differ by an order of magnitude. This phase anisotropy is observed in coherent transient experiments where an optical driving field is present during extended periods of decoherence. The decoherence time of the component of the dipole moment in phase with the driving field is extended compared to T_2, obtained from two-pulse photon echoes, in analogy with the spin locking technique of NMR.
△ Less
Submitted 25 February, 2004; v1 submitted 8 December, 2003;
originally announced December 2003.
