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Anharmonic Fluctuations Govern the Band Gap of Halide Perovskites
Authors:
Stefan A. Seidl,
Xiangzhou Zhu,
Guy Reuveni,
Sigalit Aharon,
Christian Gehrmann,
Sebastián Caicedo-Dávila,
Omer Yaffe,
David A. Egger
Abstract:
We determine the impact of anharmonic thermal vibrations on the fundamental band gap of CsPbBr$_3$, a prototypical model system for the broader class of halide perovskite semiconductors. Through first-principles molecular dynamics and stochastic calculations, we find that anharmonic fluctuations are a key effect in the electronic structure of these materials. We present experimental and theoretica…
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We determine the impact of anharmonic thermal vibrations on the fundamental band gap of CsPbBr$_3$, a prototypical model system for the broader class of halide perovskite semiconductors. Through first-principles molecular dynamics and stochastic calculations, we find that anharmonic fluctuations are a key effect in the electronic structure of these materials. We present experimental and theoretical evidence that important characteristics, such as a mildly changing band-gap value across a temperature range that includes phase-transitions, cannot be explained by harmonic phonons thermally perturbing an average crystal structure and symmetry. Instead, the thermal characteristics of the electronic structure are microscopically connected to anharmonic vibrational contributions to the band gap that reach a fairly large magnitude of 450 meV at 425 K.
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Submitted 7 August, 2023; v1 submitted 2 March, 2023;
originally announced March 2023.
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Optical detection of single electron spin resonance in a quantum dot
Authors:
Martin Kroner,
Kathrina M. Weiss,
Benjamin Biedermann,
Stefan Seidl,
Stefan Manus,
Alexander Holleitner,
Antonio Badolato,
Pierre M. Petroff,
Brian D. Gerardot,
Richard J. Warburton,
Khaled Karrai
Abstract:
We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pumping of the spin with a coherent laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few micro-T. In one case, the spin resonance behaves…
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We demonstrate optically detected spin resonance of a single electron confined to a self-assembled quantum dot. The dot is rendered dark by resonant optical pumping of the spin with a coherent laser. Contrast is restored by applying a radio frequency (rf) magnetic field at the spin resonance. The scheme is sensitive even to rf fields of just a few micro-T. In one case, the spin resonance behaves exactly as a driven 3-level quantum system (a lambda-system) with weak damping. In another, the dot exhibits remarkably strong (67% signal recovery) and narrow (0.34 MHz) spin resonances with fluctuating resonant positions, evidence of unusual dynamic processes of non-Markovian character.
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Submitted 25 October, 2007;
originally announced October 2007.
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Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems
Authors:
W. Weber,
S. Seidl,
S. N. Danilov,
W. Prettl,
V. V. Bel'kov,
L. E. Golub,
E. L. Ivchenko,
Z. D. Kvon,
Hyun-Ick Cho,
Jung-Hee Lee,
S. D. Ganichev
Abstract:
The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurren…
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The magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurrents based on spin-related phenomena are discussed. Properties of the magneto-gyrotropic and spin-galvanic effects specific for hexagonal heterostructures are analyzed.
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Submitted 27 September, 2007;
originally announced September 2007.
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Contrast in transmission spectroscopy of a single quantum dot
Authors:
B. D. Gerardot,
S. Seidl,
P. A. Dalgarno,
M. Kroner,
K. Karrai,
A. Badolato,
P. M. Petroff,
R. J. Warburton
Abstract:
We perform transmission spectroscopy on single quantum dots and examine the effects of a resident carriers spin, the incident laser spot size, polarization, and power on the experimental contrast. We demonstrate a factor of 4 improvement in the maximum contrast by using a solid immersion lens to decrease the spot area. This increase yields a maximum signal to noise ratio of 2000 Hz-1/2, which wi…
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We perform transmission spectroscopy on single quantum dots and examine the effects of a resident carriers spin, the incident laser spot size, polarization, and power on the experimental contrast. We demonstrate a factor of 4 improvement in the maximum contrast by using a solid immersion lens to decrease the spot area. This increase yields a maximum signal to noise ratio of 2000 Hz-1/2, which will allow for MHz detection frequencies. We anticipate that this improvement will allow further investigation of spectral fluctuation and open up the feasibility for an all-optical read-out of an electron spin in a quantum dot.
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Submitted 25 January, 2007;
originally announced January 2007.
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Manipulating exciton fine-structure in quantum dots with a lateral electric field
Authors:
B. D. Gerardot,
S. Seidl,
P. A. Dalgarno,
R. J. Warburton,
D. Granados,
J. M. Garcia,
K. Kowalik,
O. Krebs,
K. Karrai,
A. Badolato,
P. M. Petroff
Abstract:
The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. We show that the lateral electric field strongly affects the exciton fine structure splitting due to active…
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The fine structure of the neutral exciton in a single self assembled InGaAs quantum dot is investigated under the effect of a lateral electric field. Stark shifts up to 1.5 meV, an increase in linewidth, and a decrease in photoluminescence intensity were observed due to the electric field. We show that the lateral electric field strongly affects the exciton fine structure splitting due to active manipulation of the single particle wave-functions. Remarkably, the splitting can be tuned over large values and through zero.
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Submitted 31 August, 2006;
originally announced August 2006.
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Absorption and photoluminescence spectroscopy on a single self-assembled charge-tunable quantum dot
Authors:
S. Seidl,
M. Kroner,
P. A. Dalgarno,
A. Högele,
J. M. Smith,
M. Ediger,
B. D. Gerardot,
J. M. Garcia,
P. M. Petroff,
K. Karrai,
R. J. Warburton
Abstract:
We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single self-assembled quantum dot in a charge-tunable device. The transition from neutral to charged exciton in the PL occurs at a more negative voltage than the corresponding transition in absorption. We have developed a model of the Coulomb blockade to account for this observation. At large negative bias,…
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We have performed detailed photoluminescence (PL) and absorption spectroscopy on the same single self-assembled quantum dot in a charge-tunable device. The transition from neutral to charged exciton in the PL occurs at a more negative voltage than the corresponding transition in absorption. We have developed a model of the Coulomb blockade to account for this observation. At large negative bias, the absorption broadens as a result of electron and hole tunneling. We observe resonant features in this regime whenever the quantum dot hole level is resonant with two-dimensional hole states located at the capping layer-blocking barrier interface in our structure.
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Submitted 27 October, 2005;
originally announced October 2005.
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Absorptive and dispersive optical responses of excitons in a single quantum dot
Authors:
B. Alén,
A. Högele,
M. Kroner,
S. Seidl,
K. Karrai,
R. J. Warburton,
A. Badolato,
G. Medeiros-Ribeiro,
P. M. Petroff
Abstract:
We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance of an optical exciton transition in single self-assembled InAs and InGaAs quantum dots. The interference between the narrow-band laser field and the weak elect…
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We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance of an optical exciton transition in single self-assembled InAs and InGaAs quantum dots. The interference between the narrow-band laser field and the weak electromagnetic field coherently scattered by the quantum dot is detected with a cryogenic Fabry-Perot setup by combined differential transmission and reflectivity measurements.
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Submitted 3 December, 2007; v1 submitted 5 September, 2005;
originally announced September 2005.
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Voltage-controlled electron-hole interaction in a single quantum dot
Authors:
A. Högele,
S. Seidl,
M. Kroner,
K. Karrai,
M. Atatüre,
J. Dreiser,
A. Imamoglu,
R. J. Warburton,
B. D. Gerardot,
P. M. Petroff
Abstract:
The ground state of neutral and negatively charged excitons confined to a single self-assembled InGaAs quantum dot is probed in a direct absorption experiment by high resolution laser spectroscopy. We show how the anisotropic electron-hole exchange interaction depends on the exciton charge and demonstrate how the interaction can be switched on and off with a small dc voltage. Furthermore, we rep…
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The ground state of neutral and negatively charged excitons confined to a single self-assembled InGaAs quantum dot is probed in a direct absorption experiment by high resolution laser spectroscopy. We show how the anisotropic electron-hole exchange interaction depends on the exciton charge and demonstrate how the interaction can be switched on and off with a small dc voltage. Furthermore, we report polarization sensitive analysis of the excitonic interband transition in a single quantum dot as a function of charge with and without magnetic field.
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Submitted 6 September, 2005; v1 submitted 27 October, 2004;
originally announced October 2004.
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Spin-selective optical absorption of singly charged excitons in a quantum dot
Authors:
A. Högele,
M. Kroner,
S. Seidl,
K. Karrai,
M. Atatüre,
J. Dreiser,
A. Imamoğlu,
R. J. Warburton,
A. Badolato,
B. D. Gerardot,
P. M. Petroff
Abstract:
We investigate high resolution laser absorption spectroscopy of a single InGaAs/GaAs self-assembled quantum dot embedded in a field-effect structure. We show experimentally that the interband optical absorption to the lower Zeeman branch of the singly charged exciton is strongly inhibited due to spin (Pauli) blockade of the optical transition. At high magnetic fields the optical absorption to th…
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We investigate high resolution laser absorption spectroscopy of a single InGaAs/GaAs self-assembled quantum dot embedded in a field-effect structure. We show experimentally that the interband optical absorption to the lower Zeeman branch of the singly charged exciton is strongly inhibited due to spin (Pauli) blockade of the optical transition. At high magnetic fields the optical absorption to the upper Zeeman branch dominates the absorption spectrum. We find however that the spin blockade is not complete and a 10% leakage remains at high magnetic fields. Applying a gate voltage to empty the dot of its resident electron turns off the spin blockade. This effect is observed at 1.5 K and up to 9 Tesla.
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Submitted 6 September, 2005; v1 submitted 20 October, 2004;
originally announced October 2004.
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Voltage-Controlled Optics of a Quantum Dot
Authors:
A. Högele,
S. Seidl,
M. Kroner,
K. Karrai,
R. J. Warburton,
B. D. Gerardot,
P. M. Petroff
Abstract:
We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with $\sim 2$ $μ$eV linewidth. The splitting into two linearly polarized components arises through an exchange interaction within the exciton. The exchange interactio…
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We show how the optical properties of a single semiconductor quantum dot can be controlled with a small dc voltage applied to a gate electrode. We find that the transmission spectrum of the neutral exciton exhibits two narrow lines with $\sim 2$ $μ$eV linewidth. The splitting into two linearly polarized components arises through an exchange interaction within the exciton. The exchange interaction can be turned off by choosing a gate voltage where the dot is occupied with an additional electron. Saturation spectroscopy demonstrates that the neutral exciton behaves as a two-level system. Our experiments show that the remaining problem for manipulating excitonic quantum states in this system is spectral fluctuation on a $μ$eV energy scale.
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Submitted 25 November, 2004; v1 submitted 4 August, 2004;
originally announced August 2004.
