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Accurate Determination of the Band-Gap Energy of the Rare-Earth Niobate Series
Authors:
Alka B. Garg,
David Vie,
Placida Rodriguez-Hernandez,
Alfonso Munoz,
Alfredo Segura,
Daniel Errandonea
Abstract:
In this work, we report diffuse reflectivity measurements in InNbO4, ScNbO4, YNbO4, and eight different rare-earth niobates. From a comparison with the established values of the band gap of InNbO4 and ScNbO4, we have found that the broadly used Tauc plot analysis leads to erroneous estimates of the band-gap energy of niobates. In contrast, accurate results are obtained considering excitonic contri…
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In this work, we report diffuse reflectivity measurements in InNbO4, ScNbO4, YNbO4, and eight different rare-earth niobates. From a comparison with the established values of the band gap of InNbO4 and ScNbO4, we have found that the broadly used Tauc plot analysis leads to erroneous estimates of the band-gap energy of niobates. In contrast, accurate results are obtained considering excitonic contributions using the Elliot-Toyozawa model. We have found that YNbO4 and the rare-earth niobates are wide band-gap materials. The band-gap energy is 3.25 eV for CeNbO4, 4.35 eV for LaNbO4, 4.5 eV for YNbO4, and 4.73 - 4.93 eV for SmNbO4, EuNbO4, GdNbO4, DyNbO4, HoNbO4, and YbNbO4. An explanation for the obtained results will be presented. The fact that the band-gap energy is nearly not affected by the rare-earth substitution from SmNbO4 to YbNbO4 and the circumstance that these are the compounds with the largest band gap are a consequence of the fact that the band structure near the Fermi level originates mainly from Nb 4d and O 2p orbitals. We hypothesize that YNbO4, CeVO4, and LaNbO4 have smaller band gaps because of the contribution from rare-earth atom 4d or 5f states to the states near the Fermi level.
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Submitted 24 January, 2024;
originally announced January 2024.
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Charge and spin gaps of the ionic Hubbard model with density-dependent hopping
Authors:
Oscar A. Moreno Segura,
Karen Hallberg,
Armando A. Aligia
Abstract:
We calculate the charge gap $ΔE_C$ and the spin gap $ΔE_S$ of the ionic Hubbard chain including electron-hole symmetric density-dependent hopping. The vanishing of $ΔE_C$ ($ΔE_S$) signals a quantum critical point (QCP) in the charge (spin) sector. Between both critical points, the system is a fully gapped spontaneously dimerized insulator (SDI). We focus our study in this region. Including alterna…
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We calculate the charge gap $ΔE_C$ and the spin gap $ΔE_S$ of the ionic Hubbard chain including electron-hole symmetric density-dependent hopping. The vanishing of $ΔE_C$ ($ΔE_S$) signals a quantum critical point (QCP) in the charge (spin) sector. Between both critical points, the system is a fully gapped spontaneously dimerized insulator (SDI). We focus our study in this region. Including alternation in the hopping, it is possible to perform an adiabatic Thouless pump of one charge per cycle, but with a velocity limited by the size of the gaps.
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Submitted 18 September, 2023;
originally announced September 2023.
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Structural, Vibrational, and Electronic Behavior of Two GaGeTe Polymorphs under compression
Authors:
Enrico Bandiello,
Samuel Gallego-Parra,
Akun Liang,
Juan Ángel Sans,
Vanesa Cuenca-Gotor,
Estelina Lora da Silva,
Rosario Vilaplana,
Plácida. Rodríguez-Hernández,
Alfonso Muñoz,
Daniel Diaz-Anichtchenko,
Catalin Popescu,
Frederico Gil Alabarse,
Carlos Rudamas,
Čestmír Drašar,
Alfredo Segura,
Daniel Errandonea,
Francisco Javier Manjón
Abstract:
GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $α$-GaGeTe ($R\bar{3}m$) and $β$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of these two polytypes at high pressure. Both polytypes show anisotropic compressibility and two phase transitions…
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GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $α$-GaGeTe ($R\bar{3}m$) and $β$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of the structural, vibrational, and electronic properties of these two polytypes at high pressure. Both polytypes show anisotropic compressibility and two phase transitions, above 7 and 15 GPa, respectively, as confirmed by XRD and Raman spectroscopy measurements. Although the nature of the high-pressure phases is not confirmed, comparison with other chalcogenides and total-energy calculations allow us to propose possible high-pressure phases for both polytypes with an increase in coordination for Ga and Ge atoms from 4 to 6. In particular, the simplification of the X-ray patterns for both polytypes above 15 GPa suggests a transition to a structure of relatively higher symmetry than the original one. This result is consistent with the rocksalt-like high-pressure phases observed in parent III-VI semiconductors, such as GaTe, GaSe, and InSe. Pressure-induced amorphization is observed upon pressure release. The electronic band structures of $α$-GaGeTe and $β$-GaGeTe and their pressure dependence also show similarities to III-VI semiconductors, thus suggesting that the germanene-like sublayer induces a semimetallic character in both GaGeTe polytypes. Above 3 GPa, both polytypes lose their topological features, due to the opening of the direct band gap, while the reduction of the interlayer space increases the thermal conductivity at high pressure.
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Submitted 3 July, 2023; v1 submitted 4 May, 2023;
originally announced May 2023.
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Stress-Tuned Optical Transitions in Layered 1T-MX2 (M= Hf, Zr, Sn; X= S, Se) Crystals
Authors:
Miłosz Rybak,
Tomasz Woźniak,
Magdalena Birowska,
Filip Dybała,
Alfredo Segura,
Konrad J. Kapcia,
Paweł Scharoch,
Robert Kudrawiec
Abstract:
Optical measurements under externally applied stresses allow us to study the materials' electronic structure by comparing the pressure evolution of optical peaks obtained from experiments and theoretical calculations. We examine the stress-induced changes in electronic structure for the thermodynamically stable 1T polytype of selected MX2 compounds (M=Hf, Zr, Sn; X=S, Se), using the density functi…
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Optical measurements under externally applied stresses allow us to study the materials' electronic structure by comparing the pressure evolution of optical peaks obtained from experiments and theoretical calculations. We examine the stress-induced changes in electronic structure for the thermodynamically stable 1T polytype of selected MX2 compounds (M=Hf, Zr, Sn; X=S, Se), using the density functional theory. We demonstrate that considered 1T-MX2 materials are semiconducting with indirect character of the band gap, irrespective to the employed pressure as predicted using modified Becke-Johnson potential. We determine energies of direct interband transitions between bands extrema and in band-nesting regions close to Fermi level. Generally, the studied transitions are optically active, exhibiting in-plane polarization of light. Finally, we quantify their energy trends under external hydrostatic, uniaxial, and biaxial stresses by determining the linear pressure coefficients. Generally, negative pressure coefficients are obtained implying the narrowing of the band gap. The semiconducting-to-metal transition are predicted under hydrostatic pressure. We discuss these trends in terms of orbital composition of involved electronic bands. In addition, we demonstrate that the measured pressure coefficients of HfS2 and HfSe2 absorption edges are in perfect agreement with our predictions. Comprehensive and easy-to-interpret tables containing the optical features are provided to form the basis for assignation of optical peaks in future measurements.
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Submitted 21 October, 2022;
originally announced October 2022.
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Characterization and decomposition of the natural van der Waals heterostructure SnSb2Te4 under compression
Authors:
Juan A. Sans,
Rosario Vilaplana,
E. Lora Da Silva,
Catalin Popescu,
Vanesa P. Cuenca-Gotor,
Adrián Andrada-Chacón,
Javier Sánchez-Benitez,
Oscar Gomis,
André L. J. Pereira,
Plácida Rodríguez-Hernández,
Alfonso Muñoz,
Dominik Daisenberger,
Braulio García-Domene,
Alfredo Segura,
Daniel Errandonea,
Ravhi S. Kumar,
Oliver Oeckler,
Julia Contreras-García,
Francisco J. Manjón
Abstract:
This joint experimental and theoretical study of the structural, vibrational and electrical properties of rhombohedral SnSb2Te4 at high pressure unveils the internal mechanisms of its compression. The equation of state and the internal polyhedral compressibility, the symmetry and behavior of the Raman-active modes and the electrical behavior of this topological insulator under compression have bee…
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This joint experimental and theoretical study of the structural, vibrational and electrical properties of rhombohedral SnSb2Te4 at high pressure unveils the internal mechanisms of its compression. The equation of state and the internal polyhedral compressibility, the symmetry and behavior of the Raman-active modes and the electrical behavior of this topological insulator under compression have been discussed and compared with the parent binary alpha-Sb2Te3 and SnTe compounds and with related ternary compounds. Our X-ray diffraction and Raman measurements together with theoretical calculations, which include topological electron density and electronic localization function analysis, evidence the presence of an isostructural phase transition around 2 GPa and a Fermi resonance around 3.5 GPa. The Raman spectrum of SnSb2Te4 shows vibrational modes that are forbidden in rocksalt SnTe; thus showing a novel way to experimentally observe the forbidden vibrational modes of some compounds. Additionally, since SnSb2Te4 is an incipient metal, like its parent binary compounds, we establish a new criterion to identify the recently proposed metavalent bonding in complex materials when different bond characters coexist in the system. Finally, SnSb2Te4 exhibits a pressure-induced decomposition into the high-pressure phases of its parent binary compounds above 7 GPa, which is supported by an analysis of their formation enthalpies. We have framed the behavior of SnSb2Te4 within the extended orbital radii map of BA2Te4 compounds, which paves the way to understand the pressure behavior and stability ranges of other layered van der Waals-type compounds with similar stoichiometry.
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Submitted 18 July, 2019;
originally announced July 2019.
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Two dimensional collective electron magnetotransport, oscillations and chaos in a semiconductor superlattice
Authors:
L. L. Bonilla,
M. Carretero,
A. Segura
Abstract:
When quantized, traces of classically chaotic single particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories…
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When quantized, traces of classically chaotic single particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario and it could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.
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Submitted 12 December, 2017;
originally announced December 2017.
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Phase segregation in Mg$_{x}$Zn$_{1-x}$O probed by optical absorption and photoluminescence at high pressure
Authors:
V. Marín-Borrás,
J. Ruiz-Fuertes,
A. Segura.,
V. Muñoz-Sanjosé
Abstract:
The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg co…
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The appearance of segregated wurtzite Mg$_x$Zn$_{1-x}$O with low Mg content in thin films with $x>0.3$ affected by phase separation, cannot be reliably probed with crystallographic techniques owing to its embedded nanocrystalline configuration. Here we show a high-pressure approach which exploits the distinctive behaviors under pressure of wurtzite Mg$_x$Zn$_{1-x}$O thin films with different Mg contents to unveil phase segregation for $x>0.3$. By using ambient conditions photoluminescence (PL), and with optical absorption and PL under high pressure for $x=0.3$ we show that the appearance of a segregated wurtzite phase with a magnesium content of x $\sim$ 0.1 is inherent to the wurtzite and rock-salt phase separation. We also show that the presence of segregated wurtzite phase in oversaturated thin films phase is responsible for the low-energy absorption tail observed above $x=0.3$ in our Mg$_x$Zn$_{1-x}$O thin films. Our study has also allowed us to extend the concentration dependence of the pressure coefficient of the band gap from the previous limit of $x$ = 0.13 to $x \approx 0.3$ obtaining d$E_g$/d$P$ = 29 meV/GPa for wurtzite with $x \approx 0.3$ and 25 meV/GPa for the segregated $x\approx 0.09$ wurtzite phase.
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Submitted 14 September, 2017;
originally announced September 2017.
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Optical and structural study of the pressure-induced phase transition of CdWO$_4$
Authors:
J. Ruiz-Fuertes,
A. Friedrich,
D. Errandonea,
A. Segura,
W. Morgenroth,
P. Rodriguez-Hernandez,
A. Muñoz,
Y. Meng
Abstract:
The optical absorption of CdWO$_4$ is reported at high pressures up to 23 GPa. The onset of a phase transition was detected at 19.5 GPa, in good agreement with a previous Raman spectroscopy study. The crystal structure of the high-pressure phase of CdWO$_4$ was solved at 22 GPa employing single-crystal synchrotron x-ray diffraction. The symmetry changes from space group $P$2/$c$ in the low-pressur…
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The optical absorption of CdWO$_4$ is reported at high pressures up to 23 GPa. The onset of a phase transition was detected at 19.5 GPa, in good agreement with a previous Raman spectroscopy study. The crystal structure of the high-pressure phase of CdWO$_4$ was solved at 22 GPa employing single-crystal synchrotron x-ray diffraction. The symmetry changes from space group $P$2/$c$ in the low-pressure wolframite phase to $P2_1/c$ in the high-pressure post-wolframite phase accompanied by a doubling of the unit-cell volume. The octahedral oxygen coordination of the tungsten and cadmium ions is increased to [7]-fold and [6+1]-fold, respectively, at the phase transition. The compressibility of the low-pressure phase of CdWO$_4$ has been reevaluated with powder x-ray diffraction up to 15 GPa finding a bulk modulus of $B_0$ = 123 GPa. The direct band gap of the low-pressure phase increases with compression up to 16.9 GPa at 12 meV/GPa. At this point an indirect band gap crosses the direct band gap and decreases at -2 meV/GPa up to 19.5 GPa where the phase transition starts. At the phase transition the band gap collapses by 0.7 eV and another direct band gap decreases at -50 meV/GPa up to the maximum measured pressure. The structural stability of the post-wolframite structure is confirmed by \textit{ab initio} calculations finding the post-wolframite-type phase to be more stable than the wolframite at 18 GPa. Lattice dynamic calculations based on space group $P2_1/c$ explain well the Raman-active modes previously measured in the high-pressure post-wolframite phase. The pressure-induced band gap crossing in the wolframite phase as well as the pressure dependence of the direct band gap in the high-pressure phase are further discussed with respect to the calculations.
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Submitted 30 May, 2017;
originally announced May 2017.
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Monazite-type SrCrO4 under compression
Authors:
J. Gleissner,
D. Errandonea,
A. Segura,
J. Pellicer-Porres,
M. A. Hakeem,
J. Proctor,
S. V. Raju,
R. S. Kumar,
P. Rodriguez-Hernandez,
A. Munoz,
S. Lopez-Moreno,
M. Bettinelli
Abstract:
We report a high-pressure study of monoclinic monazite-type SrCrO4 up to 26 GPa. Therein we combined x-ray diffraction, Raman and optical-absorption measurements with ab initio calculations, to find a pressure-induced structural phase transition of SrCrO4 near 8-9 GPa. Evidence of a second phase transition was observed at 10-13 GPa. The crystal structures of the high-pressure phases were assigned…
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We report a high-pressure study of monoclinic monazite-type SrCrO4 up to 26 GPa. Therein we combined x-ray diffraction, Raman and optical-absorption measurements with ab initio calculations, to find a pressure-induced structural phase transition of SrCrO4 near 8-9 GPa. Evidence of a second phase transition was observed at 10-13 GPa. The crystal structures of the high-pressure phases were assigned to the tetragonal scheelite-type and monoclinic AgMnO4-type structures. Both transitions produce drastic changes in the electronic band gap and phonon spectrum of SrCrO4. We determined the pressure evolution of the band gap for the low-pressure and high-pressure phases as well as the frequencies and pressure dependences of the Raman-active modes. In all three phases most Raman modes harden under compression; however the presence of low-frequency modes which gradually soften is also detected. In monazite-type SrCrO4, the band gap blue-shifts under compression, but the transition to the scheelite phase causes an abrupt decrease of the band gap in SrCrO4. Calculations showed good agreement with experiments and were used to better understand the experimental results. From x-ray diffraction studies and calculations we determined the pressure dependence of the unit-cell parameters of the different phases and their ambient-temperature equations of state. The results are compared with the high-pressure behavior of other monazites, in particular PbCrO4. A comparison of the high-pressure behavior of the electronic properties of SrCrO4 (SrWO4) and PbCrO4 (PbWO4) will also be made. Finally, the possible occurrence of a third structural phase transition is discussed.
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Submitted 30 October, 2017; v1 submitted 21 October, 2016;
originally announced October 2016.
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Helium ordered trapping in arsenolite under compression: Synthesis of He2As4O6
Authors:
Juan Angel Sans,
Francisco Javier Manjón,
Catalin Popescu,
Vanesa Paula Cuenca-Gotor,
Oscar Gomis,
Alfonso Muñoz,
Plácida Rodríguez-Hernández,
Julio Pellicer-Porres,
Andre Luis de Jesus Pereira,
David Santamaría-Pérez,
Alfredo Segura
Abstract:
The compression of arsenolite (cubic As2O3) has been studied from a joint experimental and theoretical point of view. Experimental X-ray diffraction and Raman scattering measurements of this molecular solid at high pressures with different pressure-transmitting media have been interpreted with the help of ab initio calculations. Our results confirm arsenolite as one of the softest minerals in abse…
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The compression of arsenolite (cubic As2O3) has been studied from a joint experimental and theoretical point of view. Experimental X-ray diffraction and Raman scattering measurements of this molecular solid at high pressures with different pressure-transmitting media have been interpreted with the help of ab initio calculations. Our results confirm arsenolite as one of the softest minerals in absence of hydrogen bonding and provide evidence for helium trapping above 3 GPa between adamantane-type As4O6 cages, thus leading to a new compound with stoichiometry He2As4O6. Helium trapping alters all properties of arsenolite. In particular, pressure-induced amorphization, which occurs in pure arsenolite above 15 GPa, is impeded when He is trapped between the As4O6 cages; thus resulting in a mechanical stability of He2As4O6 beyond 30 GPa. Our work paves the way for the modification of the properties of other molecular solids by compression depending on their ability to trap relatively small atomic or molecular species and form new compounds. Furthermore, our work suggests that compression of molecular solids with noble gases as helium could result in unexpected results compared to other pressure-transmitting media.
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Submitted 14 February, 2015;
originally announced February 2015.
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Tuning the band gap of PbCrO4 through high-pressure: Evidence of wide-to-narrow semiconductor transitions
Authors:
D. Errandonea,
E. Bandiello,
A. Segura,
J. J. Hamlin,
M. B. Maple,
P. Rodriguez-Hernandez,
A. Munoz
Abstract:
The electronic transport properties and optical properties of lead(II) chromate (PbCrO4) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, as…
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The electronic transport properties and optical properties of lead(II) chromate (PbCrO4) have been studied at high pressure by means of resistivity, Hall-effect, and optical-absorption measurements. Band-structure first-principle calculations have been also performed. We found that the low-pressure phase is a direct band-gap semiconductor (Eg = 2.3 eV) that shows a high resistivity. At 3.5 GPa, associated to a structural phase transition, a band-gap collapse takes place, becoming Eg = 1.8 eV. At the same pressure the resistivity suddenly decreases due to an increase of the carrier concentration. In the HP phase, PbCrO4 behaves as an n-type semiconductor, with a donor level probably associated to the formation of oxygen vacancies. At 15 GPa a second phase transition occurs to a phase with Eg = 1.2 eV. In this phase, the resistivity increases as pressure does probably due to the self-compensation of donor levels and the augmentation of the scattering of electrons with ionized impurities. In the three phases the band gap red shifts under compression. At 20 GPa, Eg reaches a value of 0.8 eV, behaving PbCrO4 as a narrow-gap semiconductor.
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Submitted 10 February, 2014;
originally announced February 2014.
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Pbca-type In2O3: the lost pressure-induced post-corundum phase
Authors:
Braulio García-Domene,
Juan A. Sans,
Óscar Gomis,
Francisco J. Manjón,
Henry M. Ortiz,
Daniel Errandonea,
David Santamaría-Pérez,
Domingo Martínez-García,
Rosario Vilaplana,
André L. J. Pereira,
Ángel Morales-García,
Plácida Rodríguez-Hernández,
Alfonso Muñoz,
Catalin Popescu,
Alfredo Segura
Abstract:
Contradictory results of high-pressure studies in cubic bixbyite-type indium oxide (c-In2O3) at room temperature (RT) have motivated us to perform high-pressure powder x-ray diffraction and Raman scattering measurements in this material. On increasing pressure c-In2O3 undergoes a transition to the Rh2O3-II structure. On decreasing pressure Rh2O3-II-type In2O3 undergoes a transition to a previously…
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Contradictory results of high-pressure studies in cubic bixbyite-type indium oxide (c-In2O3) at room temperature (RT) have motivated us to perform high-pressure powder x-ray diffraction and Raman scattering measurements in this material. On increasing pressure c-In2O3 undergoes a transition to the Rh2O3-II structure. On decreasing pressure Rh2O3-II-type In2O3 undergoes a transition to a previously unknown phase which is isostructural to Rh2O3-III. On further decrease of pressure, another phase transition to corundum-type In2O3, which is metastable at room conditions, is observed. Recompression of metastable corundum-type In2O3 shows that the Rh2O3-III phase is the post-corundum phase. Our results are supported by theoretical ab initio calculations which show that the Rh2O3-III phase could be present in other sesquioxides, thus leading to a revision of the pressure-temperature phase diagrams of sesquioxides.
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Submitted 26 November, 2013;
originally announced November 2013.
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Anomalous high-pressure Jahn-Teller behavior in CuWO4
Authors:
J. Ruiz-Fuertes,
A. Segura,
F. Rodriguez,
D. Errandonea,
M. N. Sanz-Ortiz
Abstract:
High-pressure optical-absorption measurements performed in CuWO4 up to 20 GPa provide experimental evidence of the persistence of the Jahn-Teller (JT) distortion in the whole pressure range both in the low-pressure triclinic and in the highpressure monoclinic phase. The electron-lattice coupling associated with the eg(Exe) and t2g(Txe) orbitals of Cu2+ in CuWO4 are obtained from correlations betwe…
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High-pressure optical-absorption measurements performed in CuWO4 up to 20 GPa provide experimental evidence of the persistence of the Jahn-Teller (JT) distortion in the whole pressure range both in the low-pressure triclinic and in the highpressure monoclinic phase. The electron-lattice coupling associated with the eg(Exe) and t2g(Txe) orbitals of Cu2+ in CuWO4 are obtained from correlations between the JT distortion of the CuO6 octahedron and the associated structure of Cu2+ d-electronic levels. This distortion and its associated JT energy (EJT) decrease upon compression in both phases. However, both the distortion and associated EJT increase sharply at the phase transition pressure (PT = 9.9 GPa) and we estimate that the JT distortion persists for a wide pressure range not being suppressed up to 37 GPa. These results shed light on the transition mechanism of multiferroic CuWO4 suggesting that the pressureinduced structural phase transition is a way to minimize the distortive effects associated with the toughness of the JT distortion.
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Submitted 9 March, 2012;
originally announced March 2012.
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The electronic structure of zircon-type orthovanadates: Effects of high-pressure and cation substitution
Authors:
V. Panchal,
D. Errandonea,
A. Segura,
P. Rodriguez-Hernandez,
A. Munoz,
S. Lopez-Moreno,
M. Bettinelli
Abstract:
The electronic structure of four ternary-metal oxides containing isolated vanadate ions is studied. Zircon-type YVO4, YbVO4, LuVO4, and NdVO4 are investigated by high-pressure optical-absorption measurements up to 20 GPa. First-principles calculations based on density-functional theory were also performed to analyze the electronic band structure as a function of pressure. The electronic structure…
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The electronic structure of four ternary-metal oxides containing isolated vanadate ions is studied. Zircon-type YVO4, YbVO4, LuVO4, and NdVO4 are investigated by high-pressure optical-absorption measurements up to 20 GPa. First-principles calculations based on density-functional theory were also performed to analyze the electronic band structure as a function of pressure. The electronic structure near the Fermi level originates largely from molecular orbitals of the vanadate ion, but cation substitution influence these electronic states. The studied ortovanadates, with the exception of NdVO4, undergo a zircon-scheelite structural phase transition that causes a collapse of the band-gap energy. The pressure coefficient dEg/dP show positive values for the zircon phase and negative values for the scheelite phase. NdVO4 undergoes a zircon-monazite-scheelite structural sequence with two associated band-gap collapses.
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Submitted 25 January, 2012;
originally announced January 2012.
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A combined high-pressure experimental and theoretical study of the electronic band-structure of scheelite-type AWO4 (A = Ca, Sr, Ba, Pb) compounds
Authors:
R. Lacomba-Perales,
D. Errandonea,
A. Segura,
J. Ruiz-Fuertes,
P. Rodriguez-Hernandez,
S. Radescu,
J. Lopez-Solano,
A. Mujica,
A. Munoz
Abstract:
The optical-absorption edge of single crystals of CaWO4, SrWO4, BaWO4, and PbWO4 has been measured under high pressure up to ~20 GPa at room temperature. From the measurements we have obtained the evolution of the band-gap energy with pressure. We found a low-pressure range (up to 7-10 GPa) where alkaline-earth tungstates present a very small Eg pressure dependence (-2.1 < dEg/dP < 8.9 meV/GPa). I…
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The optical-absorption edge of single crystals of CaWO4, SrWO4, BaWO4, and PbWO4 has been measured under high pressure up to ~20 GPa at room temperature. From the measurements we have obtained the evolution of the band-gap energy with pressure. We found a low-pressure range (up to 7-10 GPa) where alkaline-earth tungstates present a very small Eg pressure dependence (-2.1 < dEg/dP < 8.9 meV/GPa). In contrast, in the same pressure range, PbWO4 has a pressure coefficient of -62 meV/GPa. The high-pressure range is characterized in the four compounds by an abrupt decrease of Eg followed by changes in dEg/dP. The band-gap collapse is larger than 1.2 eV in BaWO4. We also calculated the electronic-band structures and their pressure evolution. Calculations allow us to interpret experiments considering the different electronic configuration of divalent metals. Changes in the pressure evolution of Eg are correlated with the occurrence of pressure-induced phase transitions. The band structures for the low- and high-pressure phases are also reported. No metallization of any of the compounds is detected in experiments nor is predicted by calculations.
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Submitted 15 July, 2011;
originally announced July 2011.
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High-pressure study of substrate material ScAlMgO4
Authors:
D. Errandonea,
R. S. Kumar,
J. Ruiz-Fuertes,
A. Segura,
E. Haussuehl
Abstract:
We report on the structural properties of ScAlMgO4 studied under quasi-hydrostatic pressure using synchrotron high-pressure x-ray diffraction up to 40 GPa. We also report on single-crystal studies of ScAlMgO4 performed at 300 K and 100 K. We found that the low-pressure phase remains stable up to 24 GPa. At 28 GPa, we detected a reversible phase transformation. The high-pressure phase is assigned t…
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We report on the structural properties of ScAlMgO4 studied under quasi-hydrostatic pressure using synchrotron high-pressure x-ray diffraction up to 40 GPa. We also report on single-crystal studies of ScAlMgO4 performed at 300 K and 100 K. We found that the low-pressure phase remains stable up to 24 GPa. At 28 GPa, we detected a reversible phase transformation. The high-pressure phase is assigned to a monoclinic distortion of the low-pressure phase. No additional phase transition is observed up to 40 GPa. In addition, the equation of state, compressibility tensor, and thermal expansion coefficients of ScAlMgO4 are determined. The bulk modulus of ScAlMgO4 is found to be 143(8) GPa, with a strong compressibility anisotropy. For the trigonal low-pressure phase, the compressibility along the c-axis is twice than perpendicular one. A perfect lattice match with ZnO is retained under pressure in the pressure range of stability of wurtzite ZnO.
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Submitted 18 May, 2011;
originally announced May 2011.
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High-pressure x-ray diffraction and ab initio study of Ni2Mo3N, Pd2Mo3N, Pt2Mo3N, Co3Mo3N, and Fe3Mo3N: Two families of ultra-incompressible bimetallic interstitial nitrides
Authors:
D. Errandonea,
Ch. Ferrer-Roca,
D. Martinez-Garcia,
A. Segura,
O. Gomis,
A. Munoz,
P. Rodriguez-Hernandez,
J. Lopez-Solano,
S. Alconchel,
F. Sapina
Abstract:
We have studied by means of high-pressure x-ray diffraction the structural stability of Ni2Mo3N, Co3Mo3N, and Fe3Mo3N. We also report ab initio computing modeling of the high-pressure properties of these compounds, Pd2Mo3N, and Pt2Mo3N. We have found that the nitrides remain stable in the ambient-pressure cubic structure at least up to 50 GPa and determined their equation of state. All of them hav…
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We have studied by means of high-pressure x-ray diffraction the structural stability of Ni2Mo3N, Co3Mo3N, and Fe3Mo3N. We also report ab initio computing modeling of the high-pressure properties of these compounds, Pd2Mo3N, and Pt2Mo3N. We have found that the nitrides remain stable in the ambient-pressure cubic structure at least up to 50 GPa and determined their equation of state. All of them have a bulk modulus larger than 300 GPa. Single-crystal elastic constants have been calculated in order to quantify the stiffness of the investigated nitrides. We found that they should have a Vickers hardness similar to that of cubic spinel nitrides like gamma-Si3N4
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Submitted 11 November, 2010;
originally announced November 2010.
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Hall-effect and resistivity measurements in CdTe and ZnTe at high pressure: Electronic structure of impurities in the zincblende phase and the semi-metallic or metallic character of the high-pressure phases
Authors:
D. Errandonea,
A. Segura,
D. Martinez-Garcia,
V. Munoz
Abstract:
We carried out high-pressure resistivity and Hall-effect measurements in single crystals of CdTe and ZnTe up to 12 GPa. Slight changes of transport parameters in the zincblende phase of CdTe are consitent with the shallow character of donor impurities. Drastic changes in all the transport parameters of CdTe were found around 4 GPa, i.e. close to the onset of the cinnabar to rock-salt transition. I…
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We carried out high-pressure resistivity and Hall-effect measurements in single crystals of CdTe and ZnTe up to 12 GPa. Slight changes of transport parameters in the zincblende phase of CdTe are consitent with the shallow character of donor impurities. Drastic changes in all the transport parameters of CdTe were found around 4 GPa, i.e. close to the onset of the cinnabar to rock-salt transition. In particular, the carrier concentration increases by more than five orders of magnitude. Additionally, an abrupt decrease of the resistivity was detected around 10 GPa. These results are discussed in comparison with optical, thermoelectric, and x-ray diffraction experiments. The metallic character of the Cmcm phase of CdTe is confirmed and a semi-metallic character is determined for the rock-salt phase. In zincblende ZnTe, the increase of the hole concentration by more than two orders of magnitude is proposed to be due to a deep-to-shallow transformation of the acceptor levels. Between 9 and 11 GPa, transport parameters are consistent with the semiconducting character of cinnabar ZnTe. A two orders of magnitude decrease of the resistivity and a carrier-type inversion occurs at 11 GPa, in agreement with the onset of the transition to the Cmcm phase of ZnTe. A metallic character for this phase is deduced.
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Submitted 22 September, 2010;
originally announced September 2010.
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High-pressure structural phase transitions in CuWO4
Authors:
J. Ruiz-Fuertes,
D. Errandonea,
R. Lacomba-Perales,
A. Segura,
J. Gonzalez,
F. Rodriguez,
F. J. Manjon,
S. Ray,
P. Rodriguez-Hernandez,
A. Munoz,
Zh. Zhu,
C. Y. Tu
Abstract:
We study the effects of pressure on the structural, vibrational, and magnetic behavior of cuproscheelite. We performed powder x-ray diffraction and Raman spectroscopy experiments up to 27 GPa as well as ab initio total-energy and lattice-dynamics calculations. Experiments provide evidence that a structural phase transition takes place at 10 GPa from the low-pressure triclinic phase (P-1) to a mono…
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We study the effects of pressure on the structural, vibrational, and magnetic behavior of cuproscheelite. We performed powder x-ray diffraction and Raman spectroscopy experiments up to 27 GPa as well as ab initio total-energy and lattice-dynamics calculations. Experiments provide evidence that a structural phase transition takes place at 10 GPa from the low-pressure triclinic phase (P-1) to a monoclinic wolframite-type structure (P2/c). Calculations confirmed this finding and indicate that the phase transformation involves a change in the magnetic order. In addition, the equation of state for the triclinic phase is determined: V0 = 132.8(2) A3, B0 = 139 (6) GPa and = 4. Furthermore, experiments under different stress conditions show that non-hydrostatic stresses induce a second phase transition at 17 GPa and reduce the compressibility of CuWO4, B0 = 171(6) GPa. The pressure dependence of all Raman modes of the triclinic and high-pressure phases is also reported and discussed.
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Submitted 3 May, 2010;
originally announced May 2010.
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High-pressure phase transitions and compressibility of wolframite-type tungstates
Authors:
J. Ruiz-Fuertes,
S. Lopez-Moreno,
D. Errandonea,
J. Pellicer-Porres,
R. Lacomba-Perales,
A. Segura,
P. Rodriguez-Hernandez,
A. Munoz,
A. H. Romero,
J. Gonzalez
Abstract:
This paper reports an investigation on the phase diagram and compressibility of wolframite-type tungstates by means of x-ray powder diffraction and absorption in a diamond-anvil cell and ab initio calculations. The diffraction experiments show that monoclinic wolframite-type MgWO4 suffers at least two phase transitions, the first one being to a triclinic polymorph with a structure similar to tha…
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This paper reports an investigation on the phase diagram and compressibility of wolframite-type tungstates by means of x-ray powder diffraction and absorption in a diamond-anvil cell and ab initio calculations. The diffraction experiments show that monoclinic wolframite-type MgWO4 suffers at least two phase transitions, the first one being to a triclinic polymorph with a structure similar to that of CuWO4 and FeMoO4-II. The onset of each transition is detected at 17.1 and 31 GPa. In ZnWO4 the onset of the monoclinic-triclinic transition has been also found at 15.1 GPa. These findings are supported by density-functional theory calculations, which predict the occurrence of additional transitions upon further compression. Calculations have been also performed for wolframite-type MnWO4, which is found to have an antiferromagnetic configuration. In addition, x-ray absorption and diffraction experiments as well as calculations reveal details of the local-atomic compression in the studied compounds. In particular, below the transition pressure the ZnO6 and equivalent polyhedra tend to become more regular, whereas the WO6 octahedra remain almost unchanged. Fitting the pressure-volume data we obtained the equation of state for the low-pressure phase of MgWO4 and ZnWO4. These and previous results on MnWO4 and CdWO4 are compared with the calculations, being the compressibility of wolframite-type tungstates systematically discussed. Finally Raman spectroscopy measurements and lattice dynamics calculations are presented for MgWO4.
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Submitted 30 November, 2009;
originally announced November 2009.
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High-pressure structural investigation of several zircon-type orthovanadates
Authors:
D. Errandonea,
R. Lacomba-Perales,
J. Ruiz-Fuertes,
A. Segura,
S. N. Achary,
A. K. Tyagi
Abstract:
Room temperature angle-dispersive x-ray diffraction measurements on zircon-type EuVO4, LuVO4, and ScVO4 were performed up to 27 GPa. In the three compounds we found evidence of a pressure-induced structural phase transformation from zircon to a scheelite-type structure. The onset of the transition is near 8 GPa, but the transition is sluggish and the low- and high-pressure phases coexist in a pr…
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Room temperature angle-dispersive x-ray diffraction measurements on zircon-type EuVO4, LuVO4, and ScVO4 were performed up to 27 GPa. In the three compounds we found evidence of a pressure-induced structural phase transformation from zircon to a scheelite-type structure. The onset of the transition is near 8 GPa, but the transition is sluggish and the low- and high-pressure phases coexist in a pressure range of about 10 GPa. In EuVO4 and LuVO4 a second transition to a M-fergusonite-type phase was found near 21 GPa. The equations of state for the zircon and scheelite phases are also determined. Among the three studied compounds, we found that ScVO4 is less compressible than EuVO4 and LuVO4, being the most incompressible orthovanadate studied to date. The sequence of structural transitions and compressibilities are discussed in comparison with other zircon-type oxides.
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Submitted 8 May, 2009;
originally announced May 2009.
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Optical absorption of divalent metal tungstates: Correlation between the band-gap energy and the cation ionic radius
Authors:
R. Lacomba-Perales,
J. Ruiz-Fuertes,
D. Errandonea,
D. Martinez-Garcia,
A. Segura
Abstract:
We have carried out optical-absorption and reflectance measurements at room temperature in single crystals of AWO4 tungstates (A = Ba, Ca, Cd, Cu, Pb, Sr, and Zn). From the experimental results their band-gap energy has been determined to be 5.26 eV (BaWO4), 5.08 eV (SrWO4), 4.94 eV (CaWO4), 4.15 eV (CdWO4), 3.9-4.4 eV (ZnWO4), 3.8-4.2 eV (PbWO4), and 2.3 eV (CuWO4). The results are discussed in…
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We have carried out optical-absorption and reflectance measurements at room temperature in single crystals of AWO4 tungstates (A = Ba, Ca, Cd, Cu, Pb, Sr, and Zn). From the experimental results their band-gap energy has been determined to be 5.26 eV (BaWO4), 5.08 eV (SrWO4), 4.94 eV (CaWO4), 4.15 eV (CdWO4), 3.9-4.4 eV (ZnWO4), 3.8-4.2 eV (PbWO4), and 2.3 eV (CuWO4). The results are discussed in terms of the electronic structure of the studied tungstates. It has been found that those compounds where only the s electron states of the A2+ cation hybridize with the O 2p and W 5d states (e.g BaWO4) have larger band-gap energies than those where also p, d, and f states of the A2+ cation contribute to the top of the valence band and the bottom of the conduction band (e.g. PbWO4). The results are of importance in view of the large discrepancies existent in prevoiusly published data.
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Submitted 14 July, 2008;
originally announced July 2008.
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High-pressure effects on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels
Authors:
J. Ruiz-Fuertes,
D. Errandonea,
F. J. Manjon,
D. Martinez-Garcia,
A. Segura,
V. V. Ursaki,
I. M. Tiginyanu
Abstract:
The effect of pressure on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature is investigated up to 20 GPa. The pressure dependence of their band-gaps has been analyzed using the Urbach rule. We have found that, within the pressure-range of stability of the low-pressure spinel phase, the band-gap of CdIn2S4 and MgIn2S4 exhibits a linear blue-shift with pr…
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The effect of pressure on the optical-absorption edge of CdIn2S4, MgIn2S4, and MnIn2S4 thiospinels at room temperature is investigated up to 20 GPa. The pressure dependence of their band-gaps has been analyzed using the Urbach rule. We have found that, within the pressure-range of stability of the low-pressure spinel phase, the band-gap of CdIn2S4 and MgIn2S4 exhibits a linear blue-shift with pressure, whereas the band-gap of MnIn2S4 exhibits a pronounced non-linear shift. In addition, an abrupt decrease of the band-gap energies occurs in the three compounds at pressures of 10 GPa, 8.5 GPa, and 7.2 GPa, respectively. Beyond these pressures, the optical-absorption edge red-shifts upon compression for the three studied thiospinels. All these results are discussed in terms of the electronic structure of each compound and their reported structural changes.
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Submitted 23 November, 2007;
originally announced November 2007.
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Effects of high pressure on the optical absorption spectrum of scintillating PbWO4 crystals
Authors:
D. Errandonea,
D. Martinez-Garcia,
R. Lacomba-Perales,
J. Ruiz-Fuertes,
A. Segura
Abstract:
The pressure behavior of the absorption edge of PbWO4 was studied up to 15.3 GPa. It red-shifts at -71 meV/GPa below 6.1 GPa, but at 6.3 GPa the band-gap collapses from 3.5 eV to 2.75 eV. From 6.3 GPa to 11.1 GPa, the absorption edge moves with a pressure coefficient of -98 meV/GPa, undergoing additional changes at 12.2 GPa. The results are discussed in terms of the electronic structure of PbWO4…
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The pressure behavior of the absorption edge of PbWO4 was studied up to 15.3 GPa. It red-shifts at -71 meV/GPa below 6.1 GPa, but at 6.3 GPa the band-gap collapses from 3.5 eV to 2.75 eV. From 6.3 GPa to 11.1 GPa, the absorption edge moves with a pressure coefficient of -98 meV/GPa, undergoing additional changes at 12.2 GPa. The results are discussed in terms of the electronic structure of PbWO4 which attribute the behavior of the band-gap to changes in the local atomic structure. The changes observed at 6.3 GPa and 12.2 GPa are attributed to phase transitions.
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Submitted 6 September, 2006; v1 submitted 26 May, 2006;
originally announced May 2006.
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Determination of the high-pressure crystal structure of BaWO4 and PbWO4
Authors:
D. Errandonea,
J. Pellicer-Porres,
F. J. Manjon,
2 A. Segura,
Ch. Ferrer-Roca,
R. S. Kumar,
O. Tschauner,
J. Lopez-Solano,
P. Rodriguez-Hernandez,
S. Radescu,
A. Mujica,
A. Munoz,
G. Aquilanti
Abstract:
We report the results of both angle-dispersive x-ray diffraction and x-ray absorption near-edge structure studies in BaWO4 and PbWO4 at pressures of up to 56 GPa and 24 GPa, respectively. BaWO4 is found to undergo a pressure-driven phase transition at 7.1 GPa from the tetragonal scheelite structure (which is stable under normal conditions) to the monoclinic fergusonite structure whereas the same…
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We report the results of both angle-dispersive x-ray diffraction and x-ray absorption near-edge structure studies in BaWO4 and PbWO4 at pressures of up to 56 GPa and 24 GPa, respectively. BaWO4 is found to undergo a pressure-driven phase transition at 7.1 GPa from the tetragonal scheelite structure (which is stable under normal conditions) to the monoclinic fergusonite structure whereas the same transition takes place in PbWO4 at 9 GPa. We observe a second transition to another monoclinic structure which we identify as that of the isostructural phases BaWO4-II and PbWO4-III (space group P21/n). We have also performed ab initio total energy calculations which support the stability of this structure at high pressures in both compounds. The theoretical calculations further find that upon increase of pressure the scheelite phases become locally unstable and transform displacively into the fergusonite structure. The fergusonite structure is however metastable and can only occur if the transition to the P21/n phases were kinetically inhibited. Our experiments in BaWO4 indicate that it becomes amorphous beyond 47 GPa.
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Submitted 2 June, 2006; v1 submitted 27 February, 2006;
originally announced February 2006.
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High-pressure structural study of the scheelite tungstates CaWO4 and SrWO4
Authors:
D. Errandonea,
J. Pellicer-Porres,
F. J. Manjon,
A. Segura,
Ch. Ferrer,
R. S. Kumar,
O. Tschauner,
P. Rodriguez-Hernandez,
J. Lopez-Solano,
S. Radescu,
A. Mujica,
A. Munoz,
G. Aquilanti
Abstract:
Angle-dispersive x-ray diffraction (ADXRD) and x-ray absorption near edge structure (XANES) measurements have been performed in the AWO4 tungstates CaWO4 and SrWO4 under high pressure up to approximately 20 GPa. Similar phase transitions and phase transition pressures have been observed for both tungstates using the two techniques in the studied pressure range. Both materials are found to underg…
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Angle-dispersive x-ray diffraction (ADXRD) and x-ray absorption near edge structure (XANES) measurements have been performed in the AWO4 tungstates CaWO4 and SrWO4 under high pressure up to approximately 20 GPa. Similar phase transitions and phase transition pressures have been observed for both tungstates using the two techniques in the studied pressure range. Both materials are found to undergo a pressure-induced scheelite-to-fergusonite phase transition under sufficiently hydrostatic conditions. Our results are compared to those found previously in the literature and supported by ab initio total energy calculations. From the total energy calculations we have also predicted a second phase transition from the fergusonite structure to a new structure identified as Cmca. Finally, a linear relationship between the charge density in the AO8 polyhedra of ABO4 scheelite-related structures and the bulk modulus is discussed and used to predict the bulk modulus of other materials, like zircon.
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Submitted 17 November, 2005; v1 submitted 6 April, 2005;
originally announced April 2005.
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Angle-resolved photoemission study and first principles calculation of the electronic structure of GaTe
Authors:
J. F. Sanchez-Royo,
J. Pellicer-Porres,
A. Segura,
V. Munoz-Sanjose,
G. Tobias,
P. Ordejon,
E. Canadell,
Y. Huttel
Abstract:
The electronic band structure of GaTe has been calculated by numerical atomic orbitals density-functional theory, in the local density approximation. In addition, the valence-band dispersion along various directions of the GaTe Brillouin zone has been determined experimentally by angle-resolved photoelectron spectroscopy. Along these directions, the calculated valence-band structure is in good c…
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The electronic band structure of GaTe has been calculated by numerical atomic orbitals density-functional theory, in the local density approximation. In addition, the valence-band dispersion along various directions of the GaTe Brillouin zone has been determined experimentally by angle-resolved photoelectron spectroscopy. Along these directions, the calculated valence-band structure is in good concordance with the valence-band dispersion obtained by these measurements. It has been established that GaTe is a direct-gap semiconductor with the band gap located at the Z point, that is, at Brillouin zone border in the direction perpendicular to the layers. The valence-band maximum shows a marked \textit{p}-like behavior, with a pronounced anion contribution. The conduction band minimum arises from states with a comparable \textit{s}- \textit{p}-cation and \textit{p}-anion orbital contribution. Spin-orbit interaction appears to specially alter dispersion and binding energy of states of the topmost valence bands lying at $Γ$. By spin-orbit, it is favored hybridization of the topmost \textit{p}$_z$-valence band with deeper and flatter \textit{p$_x$}-\textit{p$_y$} bands and the valence-band minimum at $Γ$ is raised towards the Fermi level since it appears to be determined by the shifted up \textit{p$_x$}-\textit{p$_y$} bands.
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Submitted 2 October, 2001;
originally announced October 2001.
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Investigation of acceptor levels and hole scattering mechanisms in p-gallium selenide by means of transport measurements under pressure
Authors:
Daniel Errandonea,
J. F. Sánchez-Royo,
A. Segura,
A. Chevy,
L. Roa
Abstract:
The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole concentration is interpreted through a carrier statistics equation with a single (nitrogen) or double (tin) acceptor whose ionization energies decrease under pressure…
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The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditions up to 4 GPa. The pressure dependence of the hole concentration is interpreted through a carrier statistics equation with a single (nitrogen) or double (tin) acceptor whose ionization energies decrease under pressure due to the dielectric constant increase. The pressure effect on the hole mobility is also accounted for by considering the pressure dependencies of both the phonon frequencies and the hole-phonon coupling constants involved in the scattering rates.
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Submitted 28 October, 1997;
originally announced October 1997.
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Investigation of conduction band structure, electron scattering mechanisms and phase transitions in indium selenide by means of transport measurements under pressure
Authors:
D. Errandonea,
A. Segura,
J. F. Sánchez-Royo,
V. Muñoz,
P. Grima,
A. Chevy,
C. Ulrich
Abstract:
In this work we report on Hall effect, resistivity and thermopower measurements in n-type indium selenide at room temperature under either hydrostatic and quasi-hydrostatic pressure. Up to 40 kbar (= 4 GPa), the decrease of carrier concentration as the pressure increases is explained through the existence of a subsidiary minimum in the conduction band. This minimum shifts towards lower energies…
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In this work we report on Hall effect, resistivity and thermopower measurements in n-type indium selenide at room temperature under either hydrostatic and quasi-hydrostatic pressure. Up to 40 kbar (= 4 GPa), the decrease of carrier concentration as the pressure increases is explained through the existence of a subsidiary minimum in the conduction band. This minimum shifts towards lower energies under pressure, with a pressure coefficient of about -105 meV/GPa, and its related impurity level traps electrons as it reaches the band gap and approaches the Fermi level. The pressure value at which the electron trapping starts is shown to depend on the electron concentration at ambient pressure and the dimensionality of the electron gas. At low pressures the electron mobility increases under pressure for both 3D and 2D electrons, the increase rate being higher for 2D electrons, which is shown to be coherent with previous scattering mechanisms models. The phase transition from the semiconductor layered phase to the metallic sodium cloride phase is observed as a drop in resistivity around 105 kbar, but above 40 kbar a sharp nonreversible increase of the carrier concentration is observed, which is attributed to the formation of donor defects as precursors of the phase transition.
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Submitted 23 December, 1996;
originally announced December 1996.
