Predictions and Measurements of Thermal Conductivity of Ceramic Materials at High Temperature
Authors:
Zherui Han,
Zixin Xiong,
William T. Riffe,
Hunter B. Schonfeld,
Mauricio Segovia,
Jiawei Song,
Haiyan Wang,
Xianfan Xu,
Patrick E. Hopkins,
Amy Marconnet,
Xiulin Ruan
Abstract:
The lattice thermal conductivity ($κ$) of two ceramic materials, cerium dioxide (CeO$_2$) and magnesium oxide (MgO), is computed up to 1500 K using first principles and the phonon Boltzmann Transport Equation (PBTE) and compared to time-domain thermoreflectance (TDTR) measurements up to 800 K. Phonon renormalization and the four-phonon effect, along with high temperature thermal expansion, are int…
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The lattice thermal conductivity ($κ$) of two ceramic materials, cerium dioxide (CeO$_2$) and magnesium oxide (MgO), is computed up to 1500 K using first principles and the phonon Boltzmann Transport Equation (PBTE) and compared to time-domain thermoreflectance (TDTR) measurements up to 800 K. Phonon renormalization and the four-phonon effect, along with high temperature thermal expansion, are integrated in our \textit{ab initio} molecular dynamics (AIMD) calculations. This is done by first relaxing structures and then fitting to a set of effective force constants employed in a temperature-dependent effective potential (TDEP) method. Both three-phonon and four-phonon scattering rates are computed based on these effective force constants. Our calculated thermal conductivities from the PBTE solver agree well with literature and our TDTR measurements. Other predicted thermal properties including thermal expansion, frequency shift, and phonon linewidth also compare well with available experimental data. Our results show that high temperature softens phonon frequency and reduces four-phonon scattering strength in both ceramics. Compared to MgO, we find that CeO$_2$ has weaker four-phonon effect and renormalization greatly reduces its four-phonon scattering rates.
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Submitted 18 May, 2023;
originally announced May 2023.
Thermoelectric Performance of 2D Tellurium with Accumulation Contacts
Authors:
Gang Qiu,
Shouyuan Huang,
Mauricio Segovia,
Prabhu K. Venuthurumilli,
Yixiu Wang,
Wenzhuo Wu,
Xianfan Xu,
Peide D. Ye
Abstract:
Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an outstanding thermoelectric material with high value of thermoelectric figure-of-merit ZT. In view of the recent progress in developing synthesis route of two-dimen…
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Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an outstanding thermoelectric material with high value of thermoelectric figure-of-merit ZT. In view of the recent progress in developing synthesis route of two-dimensional (2D) tellurium thin films as well as the growing trend of exploiting nanostructures as thermoelectric devices, here for the first time we report excellent thermoelectric performance of tellurium nanofilms, with room temperature power factor of 31.7 μWcm-1K-2 and ZT value of 0.63. To further enhance the efficiency of harvesting thermoelectric power in nanofilm devices, thermoelectrical current mapping was performed with a laser as a heating source, and we found high work function metals such as palladium can form rare accumulation-type metal-to-semiconductor contacts to 2D Te, which allows thermoelectrically generated carriers to be collected more efficiently. High-performance thermoelectric 2D Te devices have broad applications as energy harvesting devices or nanoscale Peltier coolers in microsystems.
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Submitted 26 December, 2018;
originally announced December 2018.
