Intrinsic Negative Magnetoresistance in Layered AFM Semimetals: the Case of EuSn$_2$As$_2$
Authors:
K. S. Pervakov,
A. V. Sadakov,
O. A. Sobolevskiy,
V. A. Vlasenko,
V. P. Martovitsky,
E. A. Sedov,
E. I. Maltsev,
N. Perez,
L. Veyrat,
P. D. Grigoriev,
N. S. Pavlov,
I. A. Nekrasov,
O. E. Tereshchenko,
V. A. Golyashov,
V. M. Pudalov
Abstract:
Here, by applying a comprehensive approach including magnetic, transport measurements, ARPES band structure measurements, DFT calculations, and analytical theory consideration, we unveil the puzzling origin of the negative isotropic magnetoresistance in the highly anisotropic semimetals, particularly, Eu$_2$Sn$_2$As$_2$ with AFM ordering of Eu atoms. The isotropic magnetoresistance developing alon…
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Here, by applying a comprehensive approach including magnetic, transport measurements, ARPES band structure measurements, DFT calculations, and analytical theory consideration, we unveil the puzzling origin of the negative isotropic magnetoresistance in the highly anisotropic semimetals, particularly, Eu$_2$Sn$_2$As$_2$ with AFM ordering of Eu atoms. The isotropic magnetoresistance developing along with the magnetization changes up to the complete spin polarization field was reported previously in several experimental studies, though its theoretical explanation was missing up to date. Recently, we proposed a novel theoretical mechanism to describe the observed magnetoresistance in layered AFM compounds by exchange splitting of the electron energy levels and by confining the electron wave functions with different spin projection in the vicinity of the respective magnetic layer. In this paper, we present more detailed experimental studies of the negative magnetoresistance with several samples of EuSn$_2$As$_2$ in order to identify its sample-independent features including temperature dependence. We also substantiate the proposed theory by comparing it with magnetotransport data, with ARPES measurements of the energy band structure, and DFT energy spectrum calculations.
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Submitted 6 November, 2024;
originally announced November 2024.
Quantum size phenomena in single-crystalline bismuth nanostructures
Authors:
Egor A. Sedov,
Kari-Pekka Riikonen,
Konstantin Yu. Arutyunov
Abstract:
Size-dependent quantization of energy spectrum of conducting electrons in solids leads to oscillating dependence of electronic properties on corresponding dimension(s). In conventional metals with typical energy Fermi EF~1 eV and the charge carrier's effective masses m* of the order of free electron mass m0, the quantum size phenomena provide noticeable impact only at nanometer scales. Here we exp…
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Size-dependent quantization of energy spectrum of conducting electrons in solids leads to oscillating dependence of electronic properties on corresponding dimension(s). In conventional metals with typical energy Fermi EF~1 eV and the charge carrier's effective masses m* of the order of free electron mass m0, the quantum size phenomena provide noticeable impact only at nanometer scales. Here we experimentally demonstrate that in single-crystalline semimetal bismuth nanostructures the electronic conductivity non-monotonously decreases with reduction of the effective diameter. In samples grown along the particular crystallographic orientation the electronic conductivity abruptly increases at scales of about 50 nm due to metal-to-insulator transition mediated by the quantum confinement effect. The experimental findings are in reasonable agreement with theory predictions. The quantum-size phenomena should be taken into consideration to optimize operation of the next generation of ultra-small quantum nanoelectronic circuits.
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Submitted 20 November, 2016;
originally announced November 2016.
