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Scanning X-ray diffraction microscopy of a 6 GHz surface acoustic wave
Authors:
M. Hanke,
N. Ashurbekov,
E. Zatterin,
M. E. Msall,
J. Hellemann,
P. V. Santos,
T. U. Schulli,
S. Ludwig
Abstract:
Surface acoustic waves at frequencies beyond a few GHz are promising components for quantum technology applications. Applying scanning X-ray diffraction microcopy we directly map the locally resolved components of the three-dimensional strain field generated by a standing surface acoustic wave on GaAs with wavelength $λ\simeq500\,$nm corresponding to frequencies near 6 GHz. We find that the lattic…
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Surface acoustic waves at frequencies beyond a few GHz are promising components for quantum technology applications. Applying scanning X-ray diffraction microcopy we directly map the locally resolved components of the three-dimensional strain field generated by a standing surface acoustic wave on GaAs with wavelength $λ\simeq500\,$nm corresponding to frequencies near 6 GHz. We find that the lattice distortions perpendicular to the surface are phase-shifted compared to those in propagation direction. Model calculations based on Rayleigh waves confirm our measurements. Our results represent a break through in providing a full characterization of a radio frequency surface acoustic wave beyond plain imaging.
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Submitted 28 September, 2022;
originally announced September 2022.
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Variable-wavelength quick scanning nano-focused X-ray microscopy for in situ strain and tilt mapping
Authors:
Marie-ingrid Richard,
Thomas W Cornelius,
Florian Lauraux,
Jean-Baptiste Molin,
Christoph Kirchlechner,
Steven J Leake,
Jérôme Carnis,
Tobias U Schülli,
Ludovic Thilly,
Olivier Thomas
Abstract:
Compression of micro-pillars is followed in situ by a quick nano-focused X-ray scanning microscopy technique combined with three-dimensional reciprocal space mapping. Compared to other attempts using 2 X-ray nanobeams, it avoids any motion or vibration that would lead to a destruction of the sample. The technique consists of scanning both the energy of the incident nano-focused X-ray beam and the…
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Compression of micro-pillars is followed in situ by a quick nano-focused X-ray scanning microscopy technique combined with three-dimensional reciprocal space mapping. Compared to other attempts using 2 X-ray nanobeams, it avoids any motion or vibration that would lead to a destruction of the sample. The technique consists of scanning both the energy of the incident nano-focused X-ray beam and the in-plane translations of the focusing optics along the X-ray beam. Here, we demonstrate the approach by imaging the strain and lattice orientation of Si micro-pillars and their pedestals during in situ compression. Varying the energy of the incident beam instead of rocking the sample and mapping the focusing optics instead of moving the sample supplies a vibration-free measurement of the reciprocal space maps without removal of the mechanical load. The maps of strain and lattice orientation are in good agreement with the ones recorded by ordinary rocking-curve scans. Variable-wavelength quick scanning X-ray microscopy opens the route for in situ strain and tilt mapping towards more diverse and complex materials environments, especially where sample manipulation is difficult.
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Submitted 27 June, 2022;
originally announced June 2022.
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Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy
Authors:
Carsten Richter,
Vladimir M. Kaganer,
Armelle Even,
Amélie Dussaigne,
Pierre Ferret,
Frédéric Barbier,
Yves-Matthieu Le Vaillant,
Tobias U. Schülli
Abstract:
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this wo…
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Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this work, we demonstrate a microscopic mapping of the full tensors of strain and lattice orientation by means of scanning X-ray diffraction microscopy. We develope a formalism to extract all components of strain and orientation from a set of scanning diffraction measurements and apply the technique to a patterned In$_x$Ga$_{1-x}$N double layer to study strain relaxation and indium incorporation phenomena. The contributions due to varying indium content and threading dislocations are separated and analyzed.
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Submitted 28 March, 2022;
originally announced March 2022.
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Imaging the Breathing of a Platinum Nanoparticle in Electrochemical Environment
Authors:
Clément Atlan,
Corentin Chatelier,
Maxime Dupraz,
Isaac Martens,
Arnaud Viola,
Ni Li,
Lu Gao,
Steven J. Leake,
Tobias U. Schülli,
Joël Eymery,
Frédéric Maillard,
Marie-Ingrid Richard
Abstract:
Surface strain is widely used in gas phase catalysis and electrocatalysis to control the binding energies of adsorbates on metal surfaces. However, $in$ $situ$ or $operando$ strain measurements are experimentally challenging, especially on nanomaterials. Here, we take advantage of the 4$^{th}$ generation Extremely Brilliant Source at the European Synchrotron Radiation Facility (ESRF-EBS, Grenoble,…
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Surface strain is widely used in gas phase catalysis and electrocatalysis to control the binding energies of adsorbates on metal surfaces. However, $in$ $situ$ or $operando$ strain measurements are experimentally challenging, especially on nanomaterials. Here, we take advantage of the 4$^{th}$ generation Extremely Brilliant Source at the European Synchrotron Radiation Facility (ESRF-EBS, Grenoble, France) to quantify the distribution of strain inside a Pt nanoparticle, and to determine its morphology in an electrochemical environment. Our results show for the first time evidence of heterogeneous and potential-dependent strain distribution between highly-coordinated ({100} and {111} facets) and under-coordinated atoms (edges and corners) as well as evidence of strain propagation from the surface to the bulk of the nanoparticle. These results provide dynamic structural insights to better simulate and design efficient nanocatalysts for energy storage and conversion applications.
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Submitted 2 February, 2023; v1 submitted 14 March, 2022;
originally announced March 2022.
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Surface morphology and magnetic anisotropy in (Ga,Mn)As
Authors:
S. Piano,
X. Marti,
A. W. Rushforth,
K. W. Edmonds,
R. P. Campion,
O. Caha,
T. U. Schulli,
V. Holy,
B. L. Gallagher
Abstract:
Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally ob…
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Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy.
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Submitted 15 November, 2011; v1 submitted 1 October, 2010;
originally announced October 2010.
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Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering
Authors:
A. Malachias,
T. U. Schulli,
G. Medeiros-Ribeiro,
M. Stoffel,
O. G. Schmidt,
T. H. Metzger,
R. Magalhaes-Paniago
Abstract:
X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limite…
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X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001). Our results provide evidence of atomically ordered SiGe domains in both islands and wetting layer. The modeling of x-ray profiles reveals the presence of antiphase boundaries separating the ordered domains in a limited region of the islands where the stoichiometry is close to Si0.5Ge0.5.
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Submitted 25 November, 2004;
originally announced November 2004.
