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Single-Particle-Picture Breakdown in laterally weakly confining GaAs Quantum Dots
Authors:
Daniel Huber,
Barbara Ursula Lehner,
Diana Csontosová,
Marcus Reindl,
Simon Schuler,
Saimon Filipe Covre da Silva,
Petr Klenovský,
Armando Rastelli
Abstract:
We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic field-dependent $μ$-photoluminescence measurements, which allow us to identify different excited states of the quantum dot system. Besides that, we present a comprehen…
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We present a detailed investigation of different excitonic states weakly confined in single GaAs/AlGaAs quantum dots obtained by the Al droplet-etching method. For our analysis we make use of temperature-, polarization- and magnetic field-dependent $μ$-photoluminescence measurements, which allow us to identify different excited states of the quantum dot system. Besides that, we present a comprehensive analysis of g-factors and diamagnetic coefficients of charged and neutral excitonic states in Voigt and Faraday configuration. Supported by theoretical calculations by the Configuration interaction method, we show that the widely used single-particle Zeeman Hamiltonian cannot be used to extract reliable values of the g-factors of the constituent particles from excitonic transition measurements.
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Submitted 11 September, 2019;
originally announced September 2019.
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Graphene photodetector integrated on a photonic crystal defect waveguide
Authors:
Simone Schuler,
Daniel Schall,
Daniel Neumaier,
Benedikt Schwarz,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Mueller
Abstract:
We present a graphene photodetector for telecom applications based on a silicon photonic crystal defect waveguide. The photonic structure is used to confine the propagating light in a narrow region in the graphene layer to enhance light-matter interaction. Additionally, it is utilized as split-gate electrode to create a pn-junction in the vicinity of the optical absorption region. The photonic cry…
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We present a graphene photodetector for telecom applications based on a silicon photonic crystal defect waveguide. The photonic structure is used to confine the propagating light in a narrow region in the graphene layer to enhance light-matter interaction. Additionally, it is utilized as split-gate electrode to create a pn-junction in the vicinity of the optical absorption region. The photonic crystal defect waveguide allows for optimal photo-thermoelectric conversion of the occurring temperature profile in graphene into a photovoltage due to additional silicon slabs on both sides of the waveguide, enhancing the device response as compared to a conventional slot waveguide design. A photoresponsivity of 4.7 V/W and a (setup-limited) electrical bandwidth of 18 GHz are achieved. Under a moderate bias of 0.4 V we obtain a photoconductive responsivity of 0.17 A/W.
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Submitted 7 March, 2019;
originally announced March 2019.
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Thermal light emission from monolayer MoS2
Authors:
Lukas Dobusch,
Simone Schuler,
Vasili Perebeinos,
Thomas Mueller
Abstract:
Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic devices. In recent years, several concepts for light emission from two-dimensional (2D) materials have been demonstrated. Most of these concepts are based on th…
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Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic devices. In recent years, several concepts for light emission from two-dimensional (2D) materials have been demonstrated. Most of these concepts are based on the recombination of electrons and holes in a pn-junction, either along the lateral direction using split-gate geometries in combination with monolayer TMDs, or by precisely stacking different 2D semiconductors on top of each other, in order to fabricate vertical van der Waals heterostructures, working as light-emitting diodes (LEDs). Further, EL was also observed along the channel of ionic liquid gated field-effect transistors (FETs) under ambipolar carrier injection. Another mechanism, which has been studied extensively in carbon nanotubes (CNTs) and more recently also in graphene, is thermal light emission as a result of Joule heating. Although the resulting efficiencies are smaller than that of LEDs based on ambipolar electron-hole injection, these experiments provide valuable insights into microscopic processes, such as electron-phonon and phonon-phonon interactions, and the behavior of low-dimensional materials under strong bias in general.
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Submitted 7 March, 2019;
originally announced March 2019.
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Controlled generation of a pn-junction in a waveguide integrated graphene photodetector
Authors:
Simone Schuler,
Daniel Schall,
Daniel Neumaier,
Lukas Dobusch,
Ole Bethge,
Benedikt Schwarz,
Michael Krall,
Thomas Mueller
Abstract:
With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene pn-junctions has not yet been translated into high-performance…
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With its electrically tunable light absorption and ultrafast photoresponse, graphene is a promising candidate for high-speed chip-integrated photonics. The generation mechanisms of photosignals in graphene photodetectors have been studied extensively in the past years. However, the knowledge about efficient light conversion at graphene pn-junctions has not yet been translated into high-performance devices. Here, we present a graphene photodetector integrated on a silicon slot-waveguide, acting as a dual-gate to create a pn-junction in the optical absorption region of the device. While at zero bias the photo-thermoelectric effect is the dominant conversion process, an additional photoconductive contribution is identified in a biased configuration. Extrinsic responsivities of 35 mA/W, or 3.5 V/W, at zero bias and 76 mA/W at 300 mV bias voltage are achieved. The device exhibits a 3 dB-bandwidth of 65 GHz, which is the highest value reported for a graphene-based photodetector.
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Submitted 18 October, 2016;
originally announced October 2016.
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Measurement of Stochastic Entropy Production
Authors:
C. Tietz,
S. Schuler,
T. Speck,
U. Seifert,
J. Wrachtrup
Abstract:
Using fluorescence spectroscopy we directly measure entropy production of a single two-level system realized experimentally as an optically driven defect center in diamond. We exploit a recent suggestion to define entropy on the level of a single stochastic trajectory (Seifert, Phys. Rev. Lett. {\bf 95}, 040602 (2005)). Entropy production can then be split into one of the system itself and one o…
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Using fluorescence spectroscopy we directly measure entropy production of a single two-level system realized experimentally as an optically driven defect center in diamond. We exploit a recent suggestion to define entropy on the level of a single stochastic trajectory (Seifert, Phys. Rev. Lett. {\bf 95}, 040602 (2005)). Entropy production can then be split into one of the system itself and one of the surrounding medium. We demonstrate that the total entropy production obeys various exact relations for finite time trajectories.
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Submitted 17 July, 2006;
originally announced July 2006.
