Showing 1–37 of 37 results for author: Schreiber, R

High yield, low disorder Si/SiGe heterostructures for spin qubit devices manufactured in a BiCMOS pilot line

Authors: Alberto Mistroni, Marco Lisker, Yuji Yamamoto, Wei-Chen Wen, Fabian Fidorra, Henriette Tetzner, Laura K. Diebel, Lino Visser, Spandan Anupam, Vincent Mourik, Lars R. Schreiber, Hendrik Bluhm, Dominique Bougeard, Marvin H. Zoellner, Giovanni Capellini, Felix Reichmann

Abstract: The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufacturing approach. To this end, both the gate stack and the Si/SiGe heterostructure must be of high quality, exhibiting uniformity across the wafer and consistent pe… ▽ More The prospect of achieving fault-tolerant quantum computing with semiconductor spin qubits in Si/SiGe heterostructures relies on the integration of a large number of identical devices, a feat achievable through a scalable (Bi)CMOS manufacturing approach. To this end, both the gate stack and the Si/SiGe heterostructure must be of high quality, exhibiting uniformity across the wafer and consistent performance across multiple fabrication runs. Here, we report a comprehensive investigation of Si/SiGe heterostructures and gate stacks, fabricated in an industry-standard 200 mm BiCMOS pilot line. We evaluate the homogeneity and reproducibility by probing the properties of the two-dimensional electron gas (2DEG) in the shallow silicon quantum well through magnetotransport characterization of Hall bar-shaped field-effect transistors at 1.5 K. Across all the probed wafers, we observe minimal variation of the 2DEG properties, with an average maximum mobility of $(4.25\pm0.17)\times 10^{5}$ cm$^{2}$/Vs and low percolation carrier density of $(5.9\pm0.18)\times 10^{10}$ cm$^{-2}$ evidencing low disorder potential in the quantum well. The observed narrow statistical distribution of the transport properties highlights the reproducibility and the stability of the fabrication process. Furthermore, wafer-scale characterization of a selected individual wafer evidenced the homogeneity of the device performances across the wafer area. Based on these findings, we conclude that our material and processes provide a suitable platform for the development of scalable, Si/SiGe-based quantum devices. △ Less

Submitted 17 June, 2025; originally announced June 2025.

Comments: 14 pages, 2 figures

A scalable, reproducible platform for molecular electronic technologies

Authors: Seham Helmi, Junjie Liu, Keith Andrews, Robert Schreiber, Jonathan Bath, Harry L Anderson, Andrew J Turberfield, Arzhang Ardavan

Abstract: Molecular electronics and other technologies whose components comprise individual molecules have been pursued for half a century because the molecular scale represents the limit of miniaturisation of objects whose structure is tuneable for function. Despite the promise, practical progress has been hindered by the lack of methodologies for directed assembly of arbitrary structures applicable at the… ▽ More Molecular electronics and other technologies whose components comprise individual molecules have been pursued for half a century because the molecular scale represents the limit of miniaturisation of objects whose structure is tuneable for function. Despite the promise, practical progress has been hindered by the lack of methodologies for directed assembly of arbitrary structures applicable at the molecular scale. DNA nanotechnology is an emerging framework that uses programmed synthetic oligomers to encode the design of self-assembling structures with atomic precision at the nanoscale. Here, we leverage DNA-directed self-assembly to construct single-molecule electrical transport devices in high yield, precisely positioning a metal-porphyrin between two 60 nm gold nanoparticles. Following deposition on SiO2 substrates, we image and establish electrical contact via established nanofabrication techniques. Each step of the process has a high probability of success and we demonstrate device yields dramatically better than is possible using conventional approaches. Our approach is inherently scalable and adaptable to devices incorporating multiple heterogenous functional molecular components, finally offering a realistic framework for the realisation of classical and quantum molecular technologies. △ Less

Submitted 18 March, 2025; v1 submitted 17 March, 2025; originally announced March 2025.

Breaking the mold: overcoming the time constraints of molecular dynamics on general-purpose hardware

Authors: Danny Perez, Aidan Thompson, Stan Moore, Tomas Oppelstrup, Ilya Sharapov, Kylee Santos, Amirali Sharifian, Delyan Z. Kalchev, Robert Schreiber, Scott Pakin, Edgar A. Leon, James H. Laros III, Michael James, Sivasankaran Rajamanickam

Abstract: The evolution of molecular dynamics (MD) simulations has been intimately linked to that of computing hardware. For decades following the creation of MD, simulations have improved with computing power along the three principal dimensions of accuracy, atom count (spatial scale), and duration (temporal scale). Since the mid-2000s, computer platforms have however failed to provide strong scaling for M… ▽ More The evolution of molecular dynamics (MD) simulations has been intimately linked to that of computing hardware. For decades following the creation of MD, simulations have improved with computing power along the three principal dimensions of accuracy, atom count (spatial scale), and duration (temporal scale). Since the mid-2000s, computer platforms have however failed to provide strong scaling for MD as scale-out CPU and GPU platforms that provide substantial increases to spatial scale do not lead to proportional increases in temporal scale. Important scientific problems therefore remained inaccessible to direct simulation, prompting the development of increasingly sophisticated algorithms that present significant complexity, accuracy, and efficiency challenges. While bespoke MD-only hardware solutions have provided a path to longer timescales for specific physical systems, their impact on the broader community has been mitigated by their limited adaptability to new methods and potentials. In this work, we show that a novel computing architecture, the Cerebras Wafer Scale Engine, completely alters the scaling path by delivering unprecedentedly high simulation rates up to 1.144M steps/second for 200,000 atoms whose interactions are described by an Embedded Atom Method potential. This enables direct simulations of the evolution of materials using general-purpose programmable hardware over millisecond timescales, dramatically increasing the space of direct MD simulations that can be carried out. △ Less

Submitted 15 November, 2024; originally announced November 2024.

Journal ref: Journal of Chemical Physics 2025, 162(7), 072501

Industrially fabricated single-electron quantum dots in Si/Si-Ge heterostructures

Authors: Till Huckemann, Pascal Muster, Wolfram Langheinrich, Varvara Brackmann, Michael Friedrich, Nikola D. Komerički, Laura K. Diebel, Verena Stieß, Dominique Bougeard, Yuji Yamamoto, Felix Reichmann, Marvin H. Zöllner, Claus Dahl, Lars R. Schreiber, Hendrik Bluhm

Abstract: This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal budget. The devices exhibit state-of-the-art charge sensing, charge noise and valley splitting characteristics, showing that industrial fabrication is not harming the… ▽ More This paper reports the compatibility of heterostructure-based spin qubit devices with industrial CMOS technology. It features Si/Si-Ge quantum dot devices fabricated using Infineon's 200 mm production line within a restricted thermal budget. The devices exhibit state-of-the-art charge sensing, charge noise and valley splitting characteristics, showing that industrial fabrication is not harming the heterostructure quality. These measured parameters are all correlated to spin qubit coherence and qubit gate fidelity. We describe the single electron device layout, design and its fabrication process using electron beam lithography. The incorporated standard 90 nm back-end of line flow for gate-layer independent contacting and wiring can be scaled up to multiple wiring layers for scalable quantum computing architectures. In addition, we present millikelvin characterization results. Our work exemplifies the potential of industrial fabrication methods to harness the inherent CMOS-compatibility of the Si/Si-Ge material system, despite being restricted to a reduced thermal budget. It paves the way for advanced quantum processor architectures with high yield and device quality. △ Less

Submitted 1 April, 2025; v1 submitted 22 October, 2024; originally announced October 2024.

Comments: This work has been submitted to the IEEE for possible publication. 4 pages, 3 figures

Long distance spin shuttling enabled by few-parameter velocity optimization

Authors: Alessandro David, Akshay Menon Pazhedath, Lars R. Schreiber, Tommaso Calarco, Hendrik Bluhm, Felix Motzoi

Abstract: Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley degrees of freedom and well disorder dictate a slow shutting speed which seems to limit errors to above correction thresholds if not mitigated. We increase the precision of this prediction, showing that typical errors for… ▽ More Spin qubit shuttling via moving conveyor-mode quantum dots in Si/SiGe offers a promising route to scalable miniaturized quantum computing. Recent modeling of dephasing via valley degrees of freedom and well disorder dictate a slow shutting speed which seems to limit errors to above correction thresholds if not mitigated. We increase the precision of this prediction, showing that typical errors for 10 $μ$m shuttling at constant speed results in O(1) error, using fast, automatically differentiable numerics and including improved disorder modeling and potential noise ranges. However, remarkably, we show that these errors can be brought to well below fault-tolerant thresholds using trajectory shaping with very simple parametrization with as few as 4 Fourier components, well within the means for experimental in-situ realization, and without the need for targeting or knowing the location of valley near degeneracies. △ Less

Submitted 11 September, 2024; originally announced September 2024.

Comments: 13 pages, 7 figures

Optimizing ToF-SIMS Depth Profiles of Semiconductor Heterostructures

Authors: Jan Tröger, Reinhard Kersting, Birgit Hagenhoff, Dominique Bougeard, Nikolay V. Abrosimov, Jan Klos, Lars R. Schreiber, Hartmut Bracht

Abstract: The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced p… ▽ More The continuous technological development of electronic devices and the introduction of new materials leads to ever greater demands on the fabrication of semiconductor heterostructures and their characterization. This work focuses on optimizing Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) depth profiles of semiconductor heterostructures aiming at a minimization of measurement-induced profile broadening. As model system, a state-of-the-art Molecular Beam Epitaxy (MBE) grown multilayer homostructure consisting of $^{\textit{nat}}$Si/$^{28}$Si bilayers with only 2 nm in thickness is investigated while varying the most relevant sputter parameters. Atomic concentration-depth profiles are determined and an error function based description model is used to quantify layer thicknesses as well as profile broadening. The optimization process leads to an excellent resolution of the multilayer homostructure. The results of this optimization guide to a ToF-SIMS analysis of another MBE grown heterostructure consisting of a strained and highly purified $^{28}$Si layer sandwiched between two Si$_{0.7}$Ge$_{0.3}$ layers. The sandwiched $^{28}$Si layer represents a quantum well that has proven to be an excellent host for the implementation of electron-spin qubits. △ Less

Submitted 25 July, 2024; originally announced July 2024.

Comments: 10 pages, 10 figures

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells

Authors: Jan Klos, Jan Tröger, Jens Keutgen, Merritt P. Losert, Helge Riemann, Nikolay V. Abrosimov, Joachim Knoch, Hartmut Bracht, Susan N. Coppersmith, Mark Friesen, Oana Cojocaru-Mirédin, Lars R. Schreiber, Dominique Bougeard

Abstract: Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing… ▽ More Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Comments: 18 pages, 7 figures

Journal ref: Adv. Sci. 2407442 (2024)

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder

Authors: Merritt P. Losert, Max Oberländer, Julian D. Teske, Mats Volmer, Lars R. Schreiber, Hendrik Bluhm, S. N. Coppersmith, Mark Friesen

Abstract: Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with va… ▽ More Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with valley splitting dominated by alloy disorder, one can expect to encounter pockets of low valley splitting, given a long-enough shuttling path. At such locations, inter-valley tunneling leads to dephasing of the spin wavefunction, substantially reducing the shuttling fidelity. We show how to mitigate this problem by modifying the heterostructure composition, or by varying the vertical electric field, the shuttling velocity, the shape and size of the dot, or the shuttling path. We further show that combinations of these strategies can reduce the shuttling infidelity by several orders of magnitude, putting shuttling fidelities sufficient for error correction within reach. △ Less

Submitted 3 October, 2024; v1 submitted 2 May, 2024; originally announced May 2024.

Comments: 23 pages, 12 figures

Journal ref: PRX Quantum 5, 040322 (2024)

Noise reduction by bias cooling in gated Si/SixGe1-x quantum dots

Authors: Julian Ferrero, Thomas Koch, Sonja Vogel, Daniel Schroller, Viktor Adam, Ran Xue, Inga Seidler, Lars R. Schreiber, Hendrik Bluhm, Wolfgang Wernsdorfer

Abstract: Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the c… ▽ More Silicon-Germanium heterostructures are a promising quantum circuit platform, but crucial aspects as the long-term charge dynamics and cooldown-to-cooldown variations are still widely unexplored quantitatively. In this letter we present the results of an extensive bias cooling study performed on gated silicon-germanium quantum dots with an Al2O3-dielectric. Over 80 cooldowns were performed in the course of our investigations. The performance of the devices is assessed by low-frequency charge noise measurements in the band of 200 micro Hertz to 10 milli Hertz. We measure the total noise power as a function of the applied voltage during cooldown in four different devices and find a minimum in noise at 0.7V bias cooling voltage for all observed samples. We manage to decrease the total noise power median by a factor of 6 and compute a reduced tunneling current density using Schrödinger-Poisson simulations. Furthermore, we show the variation in noise from the same device in the course of eleven different cooldowns performed under the nominally same conditions. △ Less

Submitted 8 May, 2024; v1 submitted 30 April, 2024; originally announced May 2024.

Comments: 11 pages, 8 figures, silicon, SiGe, heterostructure, bias cooling, experiment, simulation

Mapping of valley-splitting by conveyor-mode spin-coherent electron shuttling

Authors: Mats Volmer, Tom Struck, Arnau Sala, Bingjie Chen, Max Oberländer, Tobias Offermann, Ran Xue, Lino Visser, Jhih-Sian Tu, Stefan Trellenkamp, Łukasz Cywiński, Hendrik Bluhm, Lars R. Schreiber

Abstract: In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method fo… ▽ More In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with high spatial and energy resolution are lacking. Leveraging the spatial control granted by conveyor-mode spin-coherent electron shuttling, we introduce a method for two-dimensional mapping of the local valley splitting by detecting magnetic field dependent anticrossings of ground and excited valley states using entangled electron spin-pairs as a probe. The method has sub-μeV energy accuracy and a nanometer lateral resolution. The histogram of valley splittings spanning a large area of 210 nm by 18 nm matches well with statistics obtained by the established but time-consuming magnetospectroscopy method. For the specific heterostructure, we find a nearly Gaussian distribution of valley splittings and a correlation length similar to the quantum dot size. Our mapping method may become a valuable tool for engineering Si/SiGe heterostructures for scalable quantum computing. △ Less

Submitted 29 December, 2023; originally announced December 2023.

Comments: 17 pages, 11 Figures

Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

Authors: Malte Neul, Isabelle V. Sprave, Laura K. Diebel, Lukas G. Zinkl, Florian Fuchs, Yuji Yamamoto, Christian Vedder, Dominique Bougeard, Lars R. Schreiber

Abstract: Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructu… ▽ More Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Comments: 11 pages, 8 figures

Spin-EPR-pair separation by conveyor-mode single electron shuttling in Si/SiGe

Authors: Tom Struck, Mats Volmer, Lino Visser, Tobias Offermann, Ran Xue, Jhih-Sian Tu, Stefan Trellenkamp, Łukasz Cywiński, Hendrik Bluhm, Lars R. Schreiber

Abstract: Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttl… ▽ More Long-ranged coherent qubit coupling is a missing function block for scaling up spin qubit based quantum computing solutions. Spin-coherent conveyor-mode electron-shuttling could enable spin quantum-chips with scalable and sparse qubit-architecture. Its key feature is the operation by only few easily tuneable input terminals and compatibility with industrial gate-fabrication. Single electron shuttling in conveyor-mode in a 420 nm long quantum bus has been demonstrated previously. Here we investigate the spin coherence during conveyor-mode shuttling by separation and rejoining an Einstein-Podolsky-Rosen (EPR) spin-pair. Compared to previous work we boost the shuttle velocity by a factor of 10000. We observe a rising spin-qubit dephasing time with the longer shuttle distances due to motional narrowing and estimate the spin-shuttle infidelity due to dephasing to be 0.7 % for a total shuttle distance of nominal 560 nm. Shuttling several loops up to an accumulated distance of 3.36 $μ$m, spin-entanglement of the EPR pair is still detectable, giving good perspective for our approach of a shuttle-based scalable quantum computing architecture in silicon. △ Less

Submitted 10 July, 2023; originally announced July 2023.

Journal ref: Nat. Commun. 15, 1325 (2024)

Si/SiGe QuBus for single electron information-processing devices with memory and micron-scale connectivity function

Authors: Ran Xue, Max Beer, Inga Seidler, Simon Humpohl, Jhih-Sian Tu, Stefan Trellenkamp, Tom Struck, Hendrik Bluhm, Lars R. Schreiber

Abstract: The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We… ▽ More The connectivity within single carrier information-processing devices requires transport and storage of single charge quanta. Our all-electrical Si/SiGe shuttle device, called quantum bus (QuBus), spans a length of 10 $\mathrmμ$m and is operated by only six simply-tunable voltage pulses. It operates in conveyor-mode, i.e. the electron is adiabatically transported while confined to a moving QD. We introduce a characterization method, called shuttle-tomography, to benchmark the potential imperfections and local shuttle-fidelity of the QuBus. The fidelity of the single-electron shuttle across the full device and back (a total distance of 19 $\mathrmμ$m) is $(99.7 \pm 0.3)\,\%$. Using the QuBus, we position and detect up to 34 electrons and initialize a register of 34 quantum dots with arbitrarily chosen patterns of zero and single-electrons. The simple operation signals, compatibility with industry fabrication and low spin-environment-interaction in $^{28}$Si/SiGe, promises spin-conserving transport of spin qubits for quantum connectivity in quantum computing architectures. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: 11 pages, 6 figures

Journal ref: Nat Commun 15, 2296 (2024)

The SpinBus Architecture: Scaling Spin Qubits with Electron Shuttling

Authors: Matthias Künne, Alexander Willmes, Max Oberländer, Christian Gorjaew, Julian D. Teske, Harsh Bhardwaj, Max Beer, Eugen Kammerloher, René Otten, Inga Seidler, Ran Xue, Lars R. Schreiber, Hendrik Bluhm

Abstract: Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduc… ▽ More Quantum processor architectures must enable scaling to large qubit numbers while providing two-dimensional qubit connectivity and exquisite operation fidelities. For microwave-controlled semiconductor spin qubits, dense arrays have made considerable progress, but are still limited in size by wiring fan-out and exhibit significant crosstalk between qubits. To overcome these limitations, we introduce the SpinBus architecture, which uses electron shuttling to connect qubits and features low operating frequencies and enhanced qubit coherence. Device simulations for all relevant operations in the Si/SiGe platform validate the feasibility with established semiconductor patterning technology and operation fidelities exceeding 99.9 %. Control using room temperature instruments can plausibly support at least 144 qubits, but much larger numbers are conceivable with cryogenic control circuits. Building on the theoretical feasibility of high-fidelity spin-coherent electron shuttling as key enabling factor, the SpinBus architecture may be the basis for a spin-based quantum processor that meets the scalability requirements for practical quantum computing. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: 15 pages, 9 figures

Journal ref: Nat Commun 15, 4977 (2024)

Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices

Authors: C. Corley-Wiciak, M. H. Zoellner, I. Zaitsev, K. Anand, E. Zatterin, Y. Yamamoto, A. A. Corley-Wiciak, F. Reichmann, W. Langheinrich, L. R. Schreiber, C. L. Manganelli, M. Virgilio, C. Richter, G. Capellini

Abstract: The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-in… ▽ More The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations of the strain tensor components in the range of $2 - 8 \times 10^{-4}$ with ~60 nm lateral resolution. We have evaluated that these strain fluctuations are reflected into local modulations of the potential of the conduction band minimum larger than 2 meV, which is close to the orbital energy of an electrostatic quantum dot. We observe that the sign of the strain modulations at a given depth of the quantum well layer depends on the lateral dimensions of the electrodes. Since our work explores the impact of device geometry on the strain-induced energy landscape, it enables further optimization of the design of scaled CMOS-processed quantum devices. △ Less

Submitted 18 April, 2023; originally announced April 2023.

Comments: 16 pages, 6 figures

Journal ref: Phys. Rev. Applied 20, 024056, 2023

Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications

Authors: Inga Seidler, Malte Neul, Eugen Kammerloher, Matthias Künne, Andreas Schmidbauer, Laura Diebel, Arne Ludwig, Julian Ritzmann, Andreas D. Wieck, Dominique Bougeard, Hendrik Bluhm, Lars R. Schreiber

Abstract: Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for elect… ▽ More Gate-layouts of spin qubit devices are commonly adapted from previous successful devices. As qubit numbers and the device complexity increase, modelling new device layouts and optimizing for yield and performance becomes necessary. Simulation tools from advanced semiconductor industry need to be adapted for smaller structure sizes and electron numbers. Here, we present a general approach for electrostatically modelling new spin qubit device layouts, considering gate voltages, heterostructures, reservoirs and an applied source-drain bias. Exemplified by a specific potential, we study the influence of each parameter. We verify our model by indirectly probing the potential landscape of two design implementations through transport measurements. We use the simulations to identify critical design areas and optimize for robustness with regard to influence and resolution limits of the fabrication process. △ Less

Submitted 23 March, 2023; originally announced March 2023.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 20, 044058 (2023)

Blueprint of a scalable spin qubit shuttle device for coherent mid-range qubit transfer in disordered Si/SiGe/SiO$_2$

Authors: Veit Langrock, Jan A. Krzywda, Niels Focke, Inga Seidler, Lars R. Schreiber, Łukasz Cywiński

Abstract: Silicon spin qubits stand out due to their very long coherence times, compatibility with industrial fabrication, and prospect to integrate classical control electronics. To achieve a truly scalable architecture, a coherent mid-range link that moves the electrons between qubit registers has been suggested to solve the signal fan-out problem. Here, we present a blueprint of such a $\approx 10\,μ$m l… ▽ More Silicon spin qubits stand out due to their very long coherence times, compatibility with industrial fabrication, and prospect to integrate classical control electronics. To achieve a truly scalable architecture, a coherent mid-range link that moves the electrons between qubit registers has been suggested to solve the signal fan-out problem. Here, we present a blueprint of such a $\approx 10\,μ$m long link, called a spin qubit shuttle, which is based on connecting an array of gates into a small number of sets. To control these sets, only a few voltage control lines are needed and the number of these sets and thus the number of required control signals is independent of the length of this link. We discuss two different operation modes for the spin qubit shuttle: A qubit conveyor, i.e. a potential minimum that smoothly moves laterally, and a bucket brigade, in which the electron is transported through a series of tunnel-coupled quantum dots by adiabatic passage. We find the former approach more promising considering a realistic Si/SiGe device including potential disorder from the charged defects at the Si/SiO$_2$ layer, as well as typical charge noise. Focusing on the qubit transfer fidelity in the conveyor shuttling mode, we discuss in detail motional narrowing, the interplay between orbital and valley excitation and relaxation in presence of $g$-factors that depend on orbital and valley state of the electron, and effects from spin-hotspots. We find that a transfer fidelity of 99.9 \% is feasible in Si/SiGe at a speed of $\sim$10 m/s, if the average valley splitting and its inhomogeneity stay within realistic bounds. Operation at low global magnetic field $\approx 20$ mT and material engineering towards high valley splitting is favourable for reaching high fidelities of transfer. △ Less

Submitted 12 April, 2023; v1 submitted 23 February, 2022; originally announced February 2022.

Comments: The final version. 25 pages of main text, 5 pages of appendices

Journal ref: PRX Quantum 4, 020305 (2023)

Triggering phase-coherent spin packets by pulsed electrical spin injection across an Fe/GaAs Schottky barrier

Authors: L. R. Schreiber, C. Schwark, G. Güntherodt, M. Lepsa, C. Adelmann, C. J. Palmstrøm, X. Lou, P. A. Crowell, B. Beschoten

Abstract: The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin… ▽ More The precise control of spins in semiconductor spintronic devices requires electrical means for generating spin packets with a well-defined initial phase. We demonstrate a pulsed electrical scheme that triggers the spin ensemble phase in a similar way as circularly-polarized optical pulses are generating phase coherent spin packets. Here, we use fast current pulses to initialize phase coherent spin packets, which are injected across an Fe/GaAs Schottky barrier into $n$-GaAs. By means of time-resolved Faraday rotation, we demonstrate phase coherence by the observation of multiple Larmor precession cycles for current pulse widths down to 500 ps at 17 K. We show that the current pulses are broadened by the charging and discharging time of the Schottky barrier. At high frequencies, the observable spin coherence is limited only by the finite band width of the current pulses, which is on the order of 2 GHz. These results therefore demonstrate that all-electrical injection and phase control of electron spin packets at microwave frequencies is possible in metallic-ferromagnet/semiconductor heterostructures. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 104, 195202 (2021)

Conveyor-mode single-electron shuttling in Si/SiGe for a scalable quantum computing architecture

Authors: Inga Seidler, Tom Struck, Ran Xue, Niels Focke, Stefan Trellenkamp, Hendrik Bluhm, Lars R. Schreiber

Abstract: Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single el… ▽ More Small spin-qubit registers defined by single electrons confined in Si/SiGe quantum dots operate successfully and connecting these would permit scalable quantum computation. Shuttling the qubit carrying electrons between registers is a natural choice for high-fidelity coherent links provided the overhead of control signals stays moderate. Our proof-of-principle demonstrates shuttling of a single electron by a propagating wave-potential in an electrostatically defined 420 nm long Si/SiGe quantum-channel. This conveyor-mode shuttling approach requires independent from its length only four sinusoidal control signals. We discuss the tuning of the signal parameters, detect the smoothness of the electron motion enabling the mapping of potential disorder and observe a high single-electron shuttling fidelity of $99.42\pm0.02\,\%$ including a reversal of direction. Our shuttling device can be readily embedded in industrial fabrication of Si/SiGe qubit chips and paves the way to solving the signal-fanout problem for a fully scalable semiconductor quantum-computing architecture. △ Less

Submitted 2 August, 2021; originally announced August 2021.

Comments: 9 pages, 5 figures

Sensing dot with high output swing for scalable baseband readout of spin qubits

Authors: Eugen Kammerloher, Andreas Schmidbauer, Laura Diebel, Inga Seidler, Malte Neul, Matthias Künne, Arne Ludwig, Julian Ritzmann, Andreas Wieck, Dominique Bougeard, Lars R. Schreiber, Hendrik Bluhm

Abstract: A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significant… ▽ More A crucial requirement for quantum computing, in particular for scalable quantum computing and error correction, is a fast and high-fidelity qubit readout. For semiconductor based qubits, one limiting factor for local low-power signal amplification, is the output swing of the charge sensor. We demonstrate GaAs and Si/SiGe asymmetric sensing dots (ASDs) specifically designed to provide a significantly improved response compared to conventional charge sensing dots. Our ASD design features a strongly decoupled drain reservoir from the sensor dot, which mitigates negative feedback effects found in conventional sensors. This results in a boosted output swing of $3\,\text{mV}$, which exceeds the response in the conventional regime of our device by more than ten times. The enhanced output signal paves the way for employing very low-power readout amplifiers in close proximity to the qubit. △ Less

Submitted 4 May, 2023; v1 submitted 28 July, 2021; originally announced July 2021.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Appl. 22, 024044 (2024)

How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation

Authors: Frank Volmer, Inga Seidler, Timo Bisswanger, Jhih-Sian Tu, Lars R. Schreiber, Christoph Stampfer, Bernd Beschoten

Abstract: We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in mo… ▽ More We discuss how the emission of electrons and ions during electron-beam-induced physical vapor deposition can cause problems in micro- and nanofabrication processes. After giving a short overview of different types of radiation emitted from an electron-beam (e-beam) evaporator and how the amount of radiation depends on different deposition parameters and conditions, we highlight two phenomena in more detail: First, we discuss an unintentional shadow evaporation beneath the undercut of a resist layer caused by the one part of the metal vapor which got ionized by electron-impact ionization. These ions first lead to an unintentional build-up of charges on the sample, which in turn results in an electrostatic deflection of subsequently incoming ionized metal atoms towards the undercut of the resist. Second, we show how low-energy secondary electrons during the metallization process can cause cross-linking, blisters, and bubbles in the respective resist layer used for defining micro- and nanostructures in an e-beam lithography process. After the metal deposition, the cross-linked resist may lead to significant problems in the lift-off process and causes leftover residues on the device. We provide a troubleshooting guide on how to minimize these effects, which e.g. includes the correct alignment of the e-beam, the avoidance of contaminations in the crucible and, most importantly, the installation of deflector electrodes within the evaporation chamber. △ Less

Submitted 15 February, 2021; v1 submitted 13 October, 2020; originally announced October 2020.

Comments: 13 pages, 7 figures

Journal ref: J. Phys. D: Appl. Phys. 54, 225304 (2021)

Low-frequency spin qubit detuning noise in highly purified $^{28}$Si/SiGe

Authors: Tom Struck, Arne Hollmann, Floyd Schauer, Olexiy Fedorets, Andreas Schmidbauer, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Łukasz Cywiński, Dominique Bougeard, Lars R. Schreiber

Abstract: The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin e… ▽ More The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin echo decay time $T_2^{\text{echo}}=128\,μ$s. The power spectral density (PSD) of the charge noise explains both the observed transition of a $1/f^2$- to a $1/f$-dependence of the detuning noise PSD as well as the observation of a decreasing time-ensemble spin dephasing time from $T_2^* \approx 20\,μ$s with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few $^{73}$Ge nuclei overlapping with the quantum dot in the barrier do not limit $T_2^*$, as their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field is the key to further improve the qubit fidelity. △ Less

Submitted 25 September, 2019; originally announced September 2019.

Journal ref: npj Quantum Information 6, 40 (2020)

Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot

Authors: Arne Hollmann, Tom Struck, Veit Langrock, Andreas Schmidbauer, Floyd Schauer, Tim Leonhardt, Kentarou Sawano, Helge Riemann, Nikolay V. Abrosimov, Dominique Bougeard, Lars R. Schreiber

Abstract: Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown… ▽ More Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown $^{28}$Si/SiGe. The valley splitting is monotonically and reproducibly tunable up to 15 % by gate voltages, originating from a 6 nm lateral displacement of the quantum dot. We observe static spin relaxation times $T_1>1$ s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, $T_1$ is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking. △ Less

Submitted 30 March, 2020; v1 submitted 9 July, 2019; originally announced July 2019.

Comments: 8 pages,4 figures

Journal ref: Phys. Rev. Applied 13, 034068 (2020)

Circular Dichroism of Chiral Molecules in DNA- Assembled Plasmonic Hotspots

Authors: Luisa M. Kneer, Eva-Maria Roller, Lucas V. Besteiro, Robert Schreiber, Alexander O. Govorov, Tim Liedl

Abstract: The chiral state of a molecule plays a crucial role in molecular recognition and biochemical reactions. Because of this and owing to the fact that most modern drugs are chiral, the sensitive and reliable detection of the chirality of molecules is of great interest to drug development. The majority of naturally occurring biomolecules exhibit circular dichroism (CD) in the UV-range. Theoretical stud… ▽ More The chiral state of a molecule plays a crucial role in molecular recognition and biochemical reactions. Because of this and owing to the fact that most modern drugs are chiral, the sensitive and reliable detection of the chirality of molecules is of great interest to drug development. The majority of naturally occurring biomolecules exhibit circular dichroism (CD) in the UV-range. Theoretical studies and several experiments have demonstrated that this UV-CD can be transferred into the plasmonic frequency domain when metal surfaces and chiral biomolecules are in close proximity. Here, we demonstrate that the CD transfer effect can be drastically enhanced by placing chiral molecules, here double-stranded DNA, inside a plasmonic hotspot. By using different particle types (gold, silver, spheres and rods) and by exploiting the versatility of DNA origami we were able to systematically study the impact of varying particle distances on the CD transfer efficiency and to demonstrate CD transfer over the whole optical spectrum down to the near infrared. For this purpose, nanorods were also placed upright on our DNA origami sheets, this way forming strong optical antennas. Theoretical models, demonstrating the intricate relationships between molecular chirality and achiral electric fields, support our experimental findings. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Journal ref: ACS Nano 2018, 12, 9, 9110-9115

Transfer of a quantum state from a photonic qubit to a gate-defined quantum dot

Authors: Benjamin Joecker, Pascal Cerfontaine, Federica Haupt, Lars R. Schreiber, Beata E. Kardynał, Hendrik Bluhm

Abstract: Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the state of a photonic qubit to a single-spin and to a two-spin qubit hosted in gate-defined quantum dots (GDQD). Both protocols are based on using a localized ex… ▽ More Interconnecting well-functioning, scalable stationary qubits and photonic qubits could substantially advance quantum communication applications and serve to link future quantum processors. Here, we present two protocols for transferring the state of a photonic qubit to a single-spin and to a two-spin qubit hosted in gate-defined quantum dots (GDQD). Both protocols are based on using a localized exciton as intermediary between the photonic and the spin qubit. We use effective Hamiltonian models to describe the hybrid systems formed by the the exciton and the GDQDs and apply simple but realistic noise models to analyze the viability of the proposed protocols. Using realistic parameters, we find that the protocols can be completed with a success probability ranging between 85-97%. △ Less

Submitted 16 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. B 99, 205415 (2019)

Calculation of tunnel-couplings in open gate-defined disordered quantum dot systems

Authors: Jan Klos, Fabian Hassler, Pascal Cerfontaine, Hendrik Bluhm, Lars R. Schreiber

Abstract: Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initialization bandwidth for energy-resolved spin-to-charge conversion and is essential to tune single-electron transistors commonly used as charge detecto… ▽ More Quantum computation based on semiconductor electron-spin qubits requires high control of tunnel-couplings, both across quantum dots and between the quantum dot and the reservoir. The tunnel-coupling to the reservoir sets the qubit detection and initialization bandwidth for energy-resolved spin-to-charge conversion and is essential to tune single-electron transistors commonly used as charge detectors. Potential disorder and the increasing complexity of the two-dimensional gate-defined quantum computing devices sets high demands on the gate design and the voltage tuning of the tunnel barriers. We present a Green's formalism approach for the calculation of tunnel-couplings between a quantum dot and a reservoir. Our method takes into account in full detail the two-dimensional electrostatic potential of the quantum dot, the tunnel barrier and reservoir. A Markov approximation is only employed far away from the tunnel barrier region where the density of states is sufficiently large. We calculate the tunnel-coupling including potential disorder effects, which become increasingly important for large-scale silicon-based spin-qubit devices. Studying the tunnel-couplings of a single-electron transistor in Si/SiGe as a showcase, we find that charged defects are the dominant source of disorder leading to variations in the tunnel-coupling of four orders of magnitude. △ Less

Submitted 4 May, 2018; originally announced May 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. B 98, 155320 (2018)

Interfacing spin qubits in quantum dots and donors - hot, dense and coherent

Authors: L. M. K. Vandersypen, H. Bluhm, J. S. Clarke, A. S. Dzurak, R. Ishihara, A. Morello, D. J. Reilly, L. R. Schreiber, M. Veldhorst

Abstract: Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circ… ▽ More Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual DC, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long spin coherence times, and the rich options for integration with classical electronics based on the same technology. △ Less

Submitted 18 December, 2016; originally announced December 2016.

Comments: 13 pages, 4 figures

Journal ref: npj Quantum Information 3, 34 (2017)

Dynamics of spin-flip photon-assisted tunneling

Authors: F. R. Braakman, J. Danon, L. R. Schreiber, W. Wegscheider, L. M. K. Vandersypen

Abstract: We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under the present conditions. We are able to extract the resulting effective `spin-flip tunneling' energy,… ▽ More We present time-resolved measurements of spin-flip photon-assisted tunneling and spin-flip relaxation in a doubly occupied double quantum dot. The photon-assisted excitation rate as a function of magnetic field indicates that spin-orbit coupling is the dominant mechanism behind the spin-flip under the present conditions. We are able to extract the resulting effective `spin-flip tunneling' energy, which is found to be three orders of magnitude smaller than the regular spin-conserving tunneling energy. We also measure the relaxation and dephasing times of a qubit formed out of two two-electron states with different spin and charge configurations. △ Less

Submitted 5 January, 2014; originally announced January 2014.

Report number: NBI CMT QDEV 2014

Journal ref: Phys. Rev. B 89, 075417 (2014)

Excitation of a Si/SiGe quantum dot using an on-chip microwave antenna

Authors: E. Kawakami, P. Scarlino, L. R. Schreiber, J. R. Prance, D. E. Savage, M. G. Lagally, M. A. Eriksson, L. M. K. Vandersypen

Abstract: We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by h… ▽ More We report transport measurements on a Si/SiGe quantum dot subject to microwave excitation via an on-chip antenna. The response shows signatures of photon-assisted tunneling and only a small effect on charge stability. We also explore the use of a d.c. current applied to the antenna for generating tunable, local magnetic field gradients and put bounds on the achievable field gradients, limited by heating of the reservoirs. △ Less

Submitted 10 January, 2013; originally announced January 2013.

Journal ref: Appl. Phys. Lett. 103, 132410 (2013)

Triggering and probing of phase-coherent spin packets by time-resolved spin transport across an Fe/GaAs Schottky barrier

Authors: L. R. Schreiber, C. Schwark, S. Richter, C. Weier, G. Güntherodt, C. Adelmann, C. J. Palmstrom, X. Lou, P. A. Crowell, B. Beschoten

Abstract: Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin… ▽ More Time-resolved electrical spin transport is used to generate and probe spin currents in GaAs electrically. We use high bandwidth current pulses to inject phase-coherent spin packets from Fe into n-GaAs. By means of time-resolved Faraday rotation we demonstrate that spins are injected with a clearly defined phase by the observation of multiple Larmor precession cycles. We furthermore show that spin precession of optically created spin packets in n-GaAs can be probed electrically by spin-polarized photo-current pulses. The injection and detection experiments are not direct reciprocals of each other. In particular, we find that interfacial spin accumulation generated by the photocurrent pulse plays a critical role in time-resolved electrical spin detection. △ Less

Submitted 19 April, 2012; originally announced April 2012.

Comments: 11 pages, 4 figures

Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

Authors: J. R. Prance, Zhan Shi, C. B. Simmons, D. E. Savage, M. G. Lagally, L. R. Schreiber, L. M. K. Vandersypen, Mark Friesen, Robert Joynt, S. N. Coppersmith, M. A. Eriksson

Abstract: We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three tripl… ▽ More We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T. △ Less

Submitted 2 November, 2011; v1 submitted 28 October, 2011; originally announced October 2011.

Comments: 4 pages, 3 figures, supplemental information. Typos fixed; updated to submitted version

Journal ref: Phys. Rev. Lett. 108, 046808 (2012)

Antiferromagnetic coupling across silicon regulated by tunneling currents

Authors: R. R. Gareev, M. Schmid, J. Vancea, C. Back, R. Schreiber, D. Buergler, C. M. Schneider, F. Stromberg, H. Wende

Abstract: We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for collector current correspon… ▽ More We report on the enhancement of antiferromagnetic coupling in epitaxial Fe/Si/Fe structures by voltage-driven spin-polarized tunneling currents. Using the ballistic electron magnetic microscopy we established that the hot-electron collector current reflects magnetization alignment and the magnetocurrent exceeds 200% at room temperature. The saturation magnetic field for collector current corresponding to parallel alignment of magnetizations rises up with the tunneling current, thus demonstrating stabilization of the antiparallel alignment and increasing antiferromagnetic coupling. We connect the enhancement of antiferromagnetic coupling with local dynamic spin torques mediated by tunneling electrons △ Less

Submitted 14 September, 2011; originally announced September 2011.

Comments: Submitted to the Applied Physics Letters Journal

DNA-based Self-Assembly of Chiral Plasmonic Nanostructures with Tailored Optical Response

Authors: Anton Kuzyk, Robert Schreiber, Zhiyuan Fan, Günther Pardatscher, Eva-Maria Roller, Alexander Högele, Friedrich C. Simmel, Alexander O. Govorov, Tim Liedl

Abstract: Surface plasmon resonances generated in metallic nanostructures can be utilized to tailor electromagnetic fields. The precise spatial arrangement of such structures can result in surprising optical properties that are not found in any naturally occurring material. Here, the designed activity emerges from collective effects of singular components equipped with limited individual functionality. Top-… ▽ More Surface plasmon resonances generated in metallic nanostructures can be utilized to tailor electromagnetic fields. The precise spatial arrangement of such structures can result in surprising optical properties that are not found in any naturally occurring material. Here, the designed activity emerges from collective effects of singular components equipped with limited individual functionality. Top-down fabrication of plasmonic materials with a predesigned optical response in the visible range by conventional lithographic methods has remained challenging due to their limited resolution, the complexity of scaling, and the difficulty to extend these techniques to three-dimensional architectures. Molecular self-assembly provides an alternative route to create such materials which is not bound by the above limitations. We demonstrate how the DNA origami method can be used to produce plasmonic materials with a tailored optical response at visible wavelengths. Harnessing the assembly power of 3D DNA origami, we arranged metal nanoparticles with a spatial accuracy of 2 nm into nanoscale helices. The helical structures assemble in solution in a massively parallel fashion and with near quantitative yields. As a designed optical response, we generated giant circular dichroism and optical rotary dispersion in the visible range that originates from the collective plasmon-plasmon interactions within the nanohelices. We also show that the optical response can be tuned through the visible spectrum by changing the composition of the metal nanoparticles. The observed effects are independent of the direction of the incident light and can be switched by design between left- and right-handed orientation. Our work demonstrates the production of complex bulk materials from precisely designed nanoscopic assemblies and highlights the potential of DNA self-assembly for the fabrication of plasmonic nanostructures. △ Less

Submitted 18 August, 2011; originally announced August 2011.

Comments: 5 pages, 4 figures

Journal ref: Nature 483, 311-314 (2012)

Coupling molecular spin states by photon-assisted tunneling

Authors: L. R. Schreiber, F. R. Braakman, T. Meunier, V. Calado, J. Danon, J. M. Taylor, W. Wegscheider, L. M. K. Vandersypen

Abstract: Artificial molecules containing just one or two electrons provide a powerful platform for studies of orbital and spin quantum dynamics in nanoscale devices. A well-known example of these dynamics is tunneling of electrons between two coupled quantum dots triggered by microwave irradiation. So far, these tunneling processes have been treated as electric dipole-allowed spin-conserving events. Here w… ▽ More Artificial molecules containing just one or two electrons provide a powerful platform for studies of orbital and spin quantum dynamics in nanoscale devices. A well-known example of these dynamics is tunneling of electrons between two coupled quantum dots triggered by microwave irradiation. So far, these tunneling processes have been treated as electric dipole-allowed spin-conserving events. Here we report that microwaves can also excite tunneling transitions between states with different spin. In this work, the dominant mechanism responsible for violation of spin conservation is the spin-orbit interaction. These transitions make it possible to perform detailed microwave spectroscopy of the molecular spin states of an artificial hydrogen molecule and open up the possibility of realizing full quantum control of a two spin system via microwave excitation. △ Less

Submitted 27 October, 2010; originally announced October 2010.

Comments: 13 pages, 9 figures

Journal ref: Nat. Commun. 2:556 (2011)

Thickness dependence of linear and quadratic magneto-optical Kerr effect in ultrathin Fe(001) films

Authors: M. Buchmeier, R. Schreiber, D. E. Bürgler, C. M. Schneider

Abstract: Magneto-optical Kerr effect (MOKE) magnetometry is one of the most widely employed techniques for the characterization of ferromagnetic thin-film samples. Some information, such as coercive fields or anisotropy strengths can be obtained without any knowledge of the optical and magneto-optical (MO) properties of the material. On the other hand, a quantitative analysis, which requires a precise kn… ▽ More Magneto-optical Kerr effect (MOKE) magnetometry is one of the most widely employed techniques for the characterization of ferromagnetic thin-film samples. Some information, such as coercive fields or anisotropy strengths can be obtained without any knowledge of the optical and magneto-optical (MO) properties of the material. On the other hand, a quantitative analysis, which requires a precise knowledge of the material's index of refraction n and the MO coupling constants K and G is often desirable, for instance for the comparison of samples, which are different with respect to ferromagnetic layer thicknesses, substrates, or capping layers. While the values of the parameters n and the linear MO coupling parameter K reported by different authors usually vary considerably, the relevant quadratic MO coupling parameters G of Fe are completely unknown. Here, we report on measurements of the thickness dependence (0-60nm) of the linear and quadratic MOKE in epitaxial bcc-Fe(001) wedge-type samples performed at a commonly used laser wavelength of 670nm. By fitting the thickness dependence we are able to extract a complete set of parameters n, K, (G11 - G12), and G44 for the quantitative description of the MOKE of bcc-Fe(001). We find sizable different n, K, and G parameters for films thinner than about 10nm as compared to thicker films, which is indicative of a thickness dependence of the electronic properties or of surface contributions to the MOKE. The effect size of the quadratic MOKE is found to be about a third of the record values recently reported for Co2FeSi. △ Less

Submitted 7 May, 2008; v1 submitted 11 March, 2008; originally announced March 2008.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 79, 064402 (2009)

Cut Size Statistics of Graph Bisection Heuristics

Authors: G. R. Schreiber, O. C. Martin

Abstract: We investigate the statistical properties of cut sizes generated by heuristic algorithms which solve approximately the graph bisection problem. On an ensemble of sparse random graphs, we find empirically that the distribution of the cut sizes found by ``local'' algorithms becomes peaked as the number of vertices in the graphs becomes large. Evidence is given that this distribution tends towards… ▽ More We investigate the statistical properties of cut sizes generated by heuristic algorithms which solve approximately the graph bisection problem. On an ensemble of sparse random graphs, we find empirically that the distribution of the cut sizes found by ``local'' algorithms becomes peaked as the number of vertices in the graphs becomes large. Evidence is given that this distribution tends towards a Gaussian whose mean and variance scales linearly with the number of vertices of the graphs. Given the distribution of cut sizes associated with each heuristic, we provide a ranking procedure which takes into account both the quality of the solutions and the speed of the algorithms. This procedure is demonstrated for a selection of local graph bisection heuristics. △ Less

Submitted 3 April, 1998; originally announced April 1998.

Comments: 17 pages, 5 figures, submitted to SIAM Journal on Optimization also available at http://ipnweb.in2p3.fr/~martino

Journal ref: SIAM Journal on Optimization, vol 10(1), p231-251 (1999)

Frustrated Blume-Emery-Griffiths model

Authors: G. R. Schreiber

Abstract: A generalised integer S Ising spin glass model is analysed using the replica formalism. The bilinear couplings are assumed to have a Gaussian distribution with ferromagnetic mean <J_ij> = Jo. Incorporation of a quadrupolar interaction term and a chemical potential leads to a richer phase diagram with transitions of first and second order. The first order transition may be interpreted as a phase… ▽ More A generalised integer S Ising spin glass model is analysed using the replica formalism. The bilinear couplings are assumed to have a Gaussian distribution with ferromagnetic mean <J_ij> = Jo. Incorporation of a quadrupolar interaction term and a chemical potential leads to a richer phase diagram with transitions of first and second order. The first order transition may be interpreted as a phase separation, and contrary to what has been argued previously, it persists in the presence of disorder. Finally, the stability of the replica symmetric solution with respect to fluctuations in replica space is analysed, and the transition lines are obtained both analytically and numerically. △ Less

Submitted 16 January, 1999; v1 submitted 20 December, 1996; originally announced December 1996.

Comments: 16 pages, 11 figures

Report number: Saclay-Preprint T96-128

Journal ref: Eur. Phys. J. B 9, 479-490 (1999)