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Topological phase in oxidized zigzag stanene nanoribbons
Authors:
M. Modarresi,
W. B. Kuang,
T. P. Kaloni,
M. R. Roknabadi,
G. Schreckenbach
Abstract:
First-principles and semi-empirical tight binding calculations were performed to understand the adsorption of oxygen on the surface of two dimensional (2D) and zigzag stanene nano-ribbons. The intrinsic spin-orbit interaction is considered in the Kane-Mele tight binding model. The adsorption of an oxygen atom or molecule on the 2D stanene opens an electronic energy band gap. We investigate the hel…
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First-principles and semi-empirical tight binding calculations were performed to understand the adsorption of oxygen on the surface of two dimensional (2D) and zigzag stanene nano-ribbons. The intrinsic spin-orbit interaction is considered in the Kane-Mele tight binding model. The adsorption of an oxygen atom or molecule on the 2D stanene opens an electronic energy band gap. We investigate the helical edge states and topological phase in the pure zigzag stanene nano-ribbons. The adsorption of oxygen atoms on the zigzag stanene nano-ribbons deforms the helical edge states at the Fermi level which causes topological (non-trivial) to trivial phase transition. The structural stability of the systems is checked by performing $Γ$-point phonon calculations. The adsorption of an oxygen atom or molecule on the 2D staneneSpecific arrangements of adsorbed oxygen atoms on the surface of zigzag stanene nano-ribbons conserve the topological phase which has potential applications in future nano-electronic devices.
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Submitted 26 October, 2016;
originally announced October 2016.
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Band gap modulation in polythiophene and polypyrrole-based systems
Authors:
T. P. Kaloni,
G. Schreckenbach,
M. S. Freund
Abstract:
In this paper, the structural and electronic properties of polythiophene and polyprrrole-based systems have been investigated using first-principles calculations both in periodic and oligomer forms. Of particular interest is the band gap modulation through substitutions and bilayer formation. Specifically, S has been substituted by Se and Te in polythiophene, leading to polyseleophene and polytell…
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In this paper, the structural and electronic properties of polythiophene and polyprrrole-based systems have been investigated using first-principles calculations both in periodic and oligomer forms. Of particular interest is the band gap modulation through substitutions and bilayer formation. Specifically, S has been substituted by Se and Te in polythiophene, leading to polyseleophene and polytellurophene, respectively, and N has been substituted by P and As in polypyrrole. The values obtained of the binding energy suggest that all the systems studied can be realized experimentally. Stacking (bilayer formation) of pure polythiophene, polypyrrole and their derivatives leads to linear suppression of the band gap or HOMO-LUMO gap as a function of the stacking. Mixed bilayers, including one formed from polythiophene on top of polypyrrole, have also been considered. Overall, a wide range of band gaps can be achieved through substitutions and stacking. Hybrid (B3LYP) calculations also suggest the same trend in the band gap as PBE calculations. Trends in the binding energy are similar for both periodic and molecular calculations. In addition, the $Γ$-point phonon calculation are performed in order to check the stability of selected systems.
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Submitted 26 October, 2016;
originally announced October 2016.
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Materials properties of out-of-plane heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$
Authors:
Bin Amin,
Thaneshwor P. Kaloni,
Georg Schreckenbach,
Michael S. Freund
Abstract:
Based on first-principles calculations, the materials properties (structural, electronic, vibrational, and optical properties) of out-of-plane heterostructures formed from the transiti on metal dichalcogenides, specifically MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ were investigated. The heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ are found to be direct and ind irect band gap semiconductors,…
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Based on first-principles calculations, the materials properties (structural, electronic, vibrational, and optical properties) of out-of-plane heterostructures formed from the transiti on metal dichalcogenides, specifically MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ were investigated. The heterostructures of MoS$_2$-WSe$_2$ and WS$_2$-MoSe$_2$ are found to be direct and ind irect band gap semiconductors, respectively. However, a direct band gap in the WS$_2$-MoSe$_2$ heterostructure can be achieved by applying compressive strain. Furthermore, the excitoni c peaks in both monolayer and bilayer heterostructures are calculated to understand the optical behavior of these systems. The suppression of the optical spectrum with respect to the c orresponding monolayers is due to interlayer charge transfer. The stability of the systems under study is confirmed by performing phonon spectrum calculations.
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Submitted 29 January, 2016;
originally announced February 2016.
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Current developments in silicene and germanene
Authors:
T. P. Kaloni,
G. Schreckenbach,
M. S. Freund,
U. Schwingenschlögl
Abstract:
Exploration of the unusual properties of the two-dimensional materials silicene and germanene is a very active research field in recent years. This article therefore reviews the latest developments, focusing both on the fundamental materials properties and on possible applications.
Exploration of the unusual properties of the two-dimensional materials silicene and germanene is a very active research field in recent years. This article therefore reviews the latest developments, focusing both on the fundamental materials properties and on possible applications.
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Submitted 19 December, 2015;
originally announced December 2015.
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Electrically Engineered Band Gap in Two-Dimensional Ge, Sn, and Pb: A First-Principles and Tight-Binding Approach
Authors:
Thaneshwor P. Kaloni,
Mohsen Modarresi,
Muhammad Tahir,
Mahmood Rezaee Roknabadi,
Georg Schreckenbach,
Michael S. Freund
Abstract:
First-principles calculations were performed to investigate the electronic structure of two-dimensional (2-D) Ge, Sn, and Pb without and with the presence of an external electric field in combination with spin-orbit coupling. Tight-binding calculations based on four orbitals per atom and an effective single orbital are presented to match with the results obtained from first-principles calculations…
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First-principles calculations were performed to investigate the electronic structure of two-dimensional (2-D) Ge, Sn, and Pb without and with the presence of an external electric field in combination with spin-orbit coupling. Tight-binding calculations based on four orbitals per atom and an effective single orbital are presented to match with the results obtained from first-principles calculations. In particular, the electronic band structure and the band splitting are investigated with both models. Moreover, the simple $k\cdot p$ model is also considered in order to understand the band splitting in the presence of an external electric field and spin-orbit coupling. A large splitting is obtained, which is expected to be useful for spintronic devices. The fair agreement between the first-principle, $k\cdot p$ model, and tight-binding approaches leads to a table of parameters for future tight-binding studies on hexagonal 2-D nanostructures. By using the tight binding parameters, the transport properties of typical 0-D triangular quantum dots between two semi-infinite electrodes in the presence of spin-orbit coupling are addressed.
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Submitted 17 April, 2015;
originally announced April 2015.
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The Structural and Electronic Properties of Pristine and Doped Polythiophene: Periodic Versus Molecular Calculations
Authors:
T. P. Kaloni,
G. Schreckenbach,
M. S. Freund
Abstract:
Based on density functional theory calculations, the structural and electronic properties of polythiophene in periodic and oligomer forms have been investigated. In particular, the effects of Li or Cl adsorption onto a monolayer and Li or Cl-intercalation into bulk or bilayer polythiophene are addressed using periodic calculations. The binding energy of Li or Cl adsorbed bulk or bilayer polythioph…
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Based on density functional theory calculations, the structural and electronic properties of polythiophene in periodic and oligomer forms have been investigated. In particular, the effects of Li or Cl adsorption onto a monolayer and Li or Cl-intercalation into bulk or bilayer polythiophene are addressed using periodic calculations. The binding energy of Li or Cl adsorbed bulk or bilayer polythiophene is significantly larger than for the monolayer. The trends in the binding energy as a function of adsorbent remain the same for both the periodic and molecular cases. The band gap or HOMO-LUMO gap and charge transfer are analysed. In addition, for the bulk or bilayer, different kinds of stacking have been considered. It is found that the parallel bulk or bilayer structure is energetically favorable compared to flipping the second layer by 180$^\circ$. This has been considered for both the periodic and oligomer forms. Moreover, for Li adsorption, polarons are found to be more stable than bipolarons, while the situation is opposite for Cl adsorption. The detailed analysis of the present study will be useful for understanding the structural properties and the tuneability of the electronic states, which is an important step to construct polythiophene based electronic devices.
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Submitted 16 January, 2015;
originally announced January 2015.
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Large Enhancement and Tunable Band Gap in Silicene by Small Organic Molecule Adsorption
Authors:
Thaneshwor P. Kaloni,
Georg Schreckenbach,
Michael S. Freund
Abstract:
Adsorption of eight organic molecules (acetone, acetonitrile, ammonia, benzene, methane, methanol, ethanol, and toluene) onto silicene has been investigated using van der Waals density functional theory calculations (DFT-D). The calculated values of the adsorption energies vary from $-0.11$ eV to $-0.95$ eV. Quantitatively, these values are higher than the corresponding adsorption energies of the…
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Adsorption of eight organic molecules (acetone, acetonitrile, ammonia, benzene, methane, methanol, ethanol, and toluene) onto silicene has been investigated using van der Waals density functional theory calculations (DFT-D). The calculated values of the adsorption energies vary from $-0.11$ eV to $-0.95$ eV. Quantitatively, these values are higher than the corresponding adsorption energies of the molecules adsorbed on graphene. In addition, electronic structure calculations have been performed. The obtained values of the band gap range from 0.006 eV to 0.35 eV for acetonitrile to acetone, respectively. Furthermore, the effective mass of the electron is estimated and found to be comparatively small, which is expected to result in high electron mobility. In addition, we study the effect of Li atoms doped in pristine and acetone adsorbed silicene. In particular, we focus on the variation of the adsorption energy with respect to the number of Li atoms in the systems. Our results suggest new approaches for the use of silicene molecular-based energy storage and conversion as well as electronic devices.
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Submitted 19 September, 2014; v1 submitted 18 September, 2014;
originally announced September 2014.