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Physical interpretation of large Lorentz violation via Weyl semimetals
Authors:
Alan Kostelecky,
Ralf Lehnert,
Marco Schreck,
Babak Seradjeh
Abstract:
The physical intepretation of effective field theories of fundamental interactions incorporating large Lorentz violation is a long-standing challenge, known as the concordance problem. In condensed-matter physics, certain Weyl semimetals with emergent Lorentz invariance exhibit large Lorentz violation, thereby offering prospective laboratory analogues for exploration of this issue. We take advanta…
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The physical intepretation of effective field theories of fundamental interactions incorporating large Lorentz violation is a long-standing challenge, known as the concordance problem. In condensed-matter physics, certain Weyl semimetals with emergent Lorentz invariance exhibit large Lorentz violation, thereby offering prospective laboratory analogues for exploration of this issue. We take advantage of the mathematical equivalence between the descriptions of large Lorentz violation in fundamental and condensed-matter physics to investigate the primary aspects of the concordance problem, which arise when the coefficients for Lorentz violation are large or the observer frame is highly boosted. Using thermodynamic arguments, we present a physical solution to the concordance problem and explore some implications.
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Submitted 23 December, 2024;
originally announced December 2024.
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Nonminimal planar electrodynamics modified by higher-derivative terms
Authors:
Letícia Lisboa-Santos,
João A. A. S. Reis,
Marco Schreck,
Manoel M. Ferreira
Abstract:
We consider a (2+1)-dimensional modified electrodynamics endowed with terms that are either Lorentz-invariant or Lorentz-violating and involve an ever increasing number of derivatives. Our construction relies on U(1) gauge invariance and the Abelian Chern-Simons term poses the starting point. The structure of the nonminimal Standard-Model Extension (SME) in (3+1) spacetime dimensions serves as an…
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We consider a (2+1)-dimensional modified electrodynamics endowed with terms that are either Lorentz-invariant or Lorentz-violating and involve an ever increasing number of derivatives. Our construction relies on U(1) gauge invariance and the Abelian Chern-Simons term poses the starting point. The structure of the nonminimal Standard-Model Extension (SME) in (3+1) spacetime dimensions serves as an inspiration for our pursuit. For elaborate studies and applications we particularly focus on the second term of the operator series in the general framework, which is the first contribution with additional derivatives. The latter forms the essential ingredient for several models of modified planar electrodynamics to be examined. The propagators of the models constitute the foundation for us deriving the physical propagating modes as well as for drawing conclusions on unitarity in the quantum regime. We are also interested in identifying parameter regions of sub- and superluminal mode propagation and determine classical solutions of the field equations for the planar models introduced. Moreover, a duality between an extended Chern-Simons theory and a subset of the fermion sector coefficients in the nonminimal SME is pointed out, as well. Finally, the integer quantum Hall effect is chosen as a testbed to demonstrate the applicability of our findings to real physical systems. Predictions on momentum- and direction-dependent corrections of the Hall resistivity are made at the level of effective field theory, which could be tested in experiments. Thus, the (2+1)-dimensional models proposed are potentially applicable to model electromagnetic phenomena in certain planar condensed-matter systems.
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Submitted 28 September, 2023;
originally announced September 2023.
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Lorentz violation in Dirac and Weyl semimetals
Authors:
Alan Kostelecky,
Ralf Lehnert,
Navin McGinnis,
Marco Schreck,
Babak Seradjeh
Abstract:
We propose a correspondence between the description of emergent Lorentz symmetry in condensed-matter systems and the established general effective field theory for Lorentz violation in fundamental theories of spacetime and matter. This correspondence has potential implications in both directions. We illustrate the proposal by investigating its consequences for the spectral and transport properties…
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We propose a correspondence between the description of emergent Lorentz symmetry in condensed-matter systems and the established general effective field theory for Lorentz violation in fundamental theories of spacetime and matter. This correspondence has potential implications in both directions. We illustrate the proposal by investigating its consequences for the spectral and transport properties of Dirac and Weyl semimetals. Particular realizations of this framework give rise to Dirac nodal spectra with nodal lines and rings. We demonstrate a bulk-boundary correspondence between bulk topological invariants and drumhead surface states of these Dirac nodal semimetals. We calculate their transport coefficients in leading-order perturbation theory, thereby characterizing the unconventional electromagnetic response due to small deviations from emergent Lorentz invariance. Some prospective future applications of the correspondence are outlined.
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Submitted 28 December, 2021;
originally announced December 2021.
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Effects of CPT-odd terms of dimensions three and five on electromagnetic propagation in continuous matter
Authors:
Pedro D. S. Silva,
Letícia Lisboa-Santos,
Manoel M. Ferreira Jr.,
Marco Schreck
Abstract:
In this work we study how CPT-odd Maxwell-Carroll-Field-Jackiw (MCFJ) electrodynamics as well as a dimension-5 extension of it affect the optical activity of continuous media. The starting point is dimension-3 MCFJ electrodynamics in matter whose modified Maxwell equations, permittivity tensor, and dispersion relations are recapitulated. Corresponding refractive indices are achieved in terms of th…
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In this work we study how CPT-odd Maxwell-Carroll-Field-Jackiw (MCFJ) electrodynamics as well as a dimension-5 extension of it affect the optical activity of continuous media. The starting point is dimension-3 MCFJ electrodynamics in matter whose modified Maxwell equations, permittivity tensor, and dispersion relations are recapitulated. Corresponding refractive indices are achieved in terms of the frequency and the vector-valued background field. For a purely timelike background, the refractive indices are real. Their associated propagation modes are circularly polarized and exhibit birefringence. For a purely spacelike background, one refractive index is always real and the other can be complex. The circularly polarized propagating modes may exhibit birefringence and dichroism (associated with absorption). Subsequently, we examine a dimension-five MCFJ-type electrodynamics, previously scrutinized in the literature, in a continuous medium. Following the same procedure, we find the refractive indices from a sixth-order dispersion equation. For a purely timelike background, three distinct refractive indices are obtained, one of them being real and two being complex. They are associated with two circularly polarized propagating modes that exhibit birefringence or dichroism, depending on the frequency range. Scenarios of propagation and absorption analogous to those found in dispersive dielectrics are also observed for spacelike background configurations. We conclude by comparing the dimension-three and five results and by emphasizing the richer phenomenology of the propagating modes in the higher-derivative model. Our results are applicable in the realm of Weyl semimetals.
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Submitted 4 November, 2021; v1 submitted 10 September, 2021;
originally announced September 2021.
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Magnetic-conductivity effects on electromagnetic propagation in dispersive matter
Authors:
Pedro D. S. Silva,
Manoel M. Ferreira Jr.,
Marco Schreck,
Luis F. Urrutia
Abstract:
The Chiral Magnetic Effect (CME) has been investigated as a new transport phenomenon in condensed matter. Such an effect appears in systems with chiral fermions and involves an electric current generated by a magnetic field by means of an "exotic" magnetic conductivity. This effect can also be connected with extensions of the usual Ohm's law either in magnetohydrodynamics or in Lorentz-violating s…
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The Chiral Magnetic Effect (CME) has been investigated as a new transport phenomenon in condensed matter. Such an effect appears in systems with chiral fermions and involves an electric current generated by a magnetic field by means of an "exotic" magnetic conductivity. This effect can also be connected with extensions of the usual Ohm's law either in magnetohydrodynamics or in Lorentz-violating scenarios. In this work, we study the classical propagation of electromagnetic waves in isotropic dispersive matter subject to a generalized Ohm's law. The latter involves currents linear in the magnetic field and implies scenarios inducing parity violation. We pay special attention to the case of a vanishing electric conductivity. For a diagonal magnetic conductivity, which includes the CME, the refractive index is modified such that it implies birefringence. For a nondiagonal magnetic conductivity, modified refractive indices exhibiting imaginary parts occur ascribing a conducting behavior to a usual dielectric medium. Our findings provide new insight into typical material properties associated with a magnetic conductivity.
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Submitted 2 October, 2020; v1 submitted 2 June, 2020;
originally announced June 2020.
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Towards wafer-scale diamond nano- and quantum technologies
Authors:
Richard Nelz,
Johannes Görlitz,
Dennis Herrmann,
Abdallah Slablab,
Michel Challier,
Mariusz Radtke,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Elke Neu
Abstract:
We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure…
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We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to $100 mm$ it offers the opportunity to up-scale diamond-based device fabrication.
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Submitted 22 October, 2018;
originally announced October 2018.
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Efficient creation of dipolar coupled nitrogen-vacancy spin qubits in diamond
Authors:
Ingmar Jakobi,
Seyed Ali Momenzadeh,
Felipe Fávaro de Oliveira,
Julia Michl,
Florestan Ziem,
Matthias Schreck,
Philipp Neumann,
Andrej Denisenko,
Jörg Wrachtrup
Abstract:
Coherently coupled pairs or multimers of nitrogen-vacancy defect electron spins in diamond have many promising applications especially in quantum information processing (QIP) but also in nanoscale sensing applications. Scalable registers of spin qubits are essential to the progress of QIP. Ion implantation is the only known technique able to produce defect pairs close enough to allow spin coupling…
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Coherently coupled pairs or multimers of nitrogen-vacancy defect electron spins in diamond have many promising applications especially in quantum information processing (QIP) but also in nanoscale sensing applications. Scalable registers of spin qubits are essential to the progress of QIP. Ion implantation is the only known technique able to produce defect pairs close enough to allow spin coupling via dipolar interaction. Although several competing methods have been proposed to increase the resulting resolution of ion implantation, the reliable creation of working registers is still to be demonstrated. The current limitation are residual radiation-induced defects, resulting in degraded qubit performance as trade-off for positioning accuracy. Here we present an optimized estimation of nanomask implantation parameters that are most likely to produce interacting qubits under standard conditions. We apply our findings to a well-established technique, namely masks written in electron-beam lithography, to create coupled defect pairs with a reasonable probability. Furthermore, we investigate the scaling behavior and necessary improvements to efficiently engineer interacting spin architectures.
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Submitted 4 October, 2016;
originally announced October 2016.
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Localization of narrowband single photon emitters in nanodiamonds
Authors:
Kerem Bray,
Russell Sandstrom,
Christopher Elbadawi,
Martin Fischer,
Matthias Schreck,
Olga Shimoni,
Charlene Lobo,
Milos Toth,
Igor Aharonovich
Abstract:
Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bio-imaging. However, current understanding of the origin of these emitters is extremely limited. In this work we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds. In particul…
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Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bio-imaging. However, current understanding of the origin of these emitters is extremely limited. In this work we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds. In particular, we show that nanocrystals with defects such as twin boundaries and secondary nucleation sites exhibit narrowband emission that is absent from pristine individual nanocrystals grown under the same conditions. Critically, we prove that the narrowband emission lines vanish when extended defects are removed deterministically using highly localized electron beam induced etching. Our results enhance the current understanding of single photon emitters in diamond, and are directly relevant to fabrication of novel quantum optics devices and sensors.
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Submitted 18 January, 2016;
originally announced January 2016.
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Site selective growth of heteroepitaxial diamond nanoislands containing single SiV centers
Authors:
Carsten Arend,
Patrick Appel,
Jonas Nils Becker,
Marcel Schmidt,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher,
Patrick Maletinsky,
Elke Neu
Abstract:
We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned ar…
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We demonstrate the controlled preparation of heteroepitaxial diamond nano- and microstructures on silicon wafer based iridium films as hosts for single color centers. Our approach uses electron beam lithography followed by reactive ion etching to pattern the carbon layer formed by bias enhanced nucleation on the iridium surface. In the subsequent chemical vapor deposition process, the patterned areas evolve into regular arrays of (001) oriented diamond nano-islands with diameters of <500nm and a height of approx. 60 nm. In the islands, we identify single SiV color centers with narrow zero phonon lines down to 1 nm at room temperature.
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Submitted 9 February, 2016; v1 submitted 11 November, 2015;
originally announced November 2015.
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Production yield of rare-earth ions implanted into an optical crystal
Authors:
Thomas Kornher,
Kangwei Xia,
Roman Kolesov,
Nadezhda Kukharchyk,
Rolf Reuter,
Petr Siyushev,
Rainer Stöhr,
Matthias Schreck,
Hans-Werner Becker,
Bruno Villa,
Andreas D. Wieck,
Jörg Wrachtrup
Abstract:
Rare-earth ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both, implanted samples and single centers was used. With a tailored annealing pr…
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Rare-earth ions doped into desired locations of optical crystals might enable a range of novel integrated photonic devices for quantum applications. With this aim, we have investigated the production yield of cerium and praseodymium by means of ion implantation. As a measure, the collected fluorescence intensity from both, implanted samples and single centers was used. With a tailored annealing procedure for cerium, a yield up to 53% was estimated. Praseodymium yield amounts up to 91%.
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Submitted 17 October, 2015; v1 submitted 12 October, 2015;
originally announced October 2015.
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Graphene-Silicon Layered Structures on Single-crystalline Ir(111) Thin Films
Authors:
Yande Que,
Yong Zhang,
Yeliang Wang,
Li Huang,
Wenyan Xu,
Jing Tao,
Lijun Wu,
Yimei Zhu,
Kisslinger Kim,
Michael Weinl,
Matthias Schreck,
Chengmin Shen,
Shixuan Du,
Yunqi Liu,
H. -J. Gao
Abstract:
Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with an yttria-stabilized zirconia buffer layer via intercalation approach. Such hetero-layered structures are compatible with current Si-based microelectronic tech…
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Single-crystalline transition metal films are ideal playing fields for the epitaxial growth of graphene and graphene-base materials. Graphene-silicon layered structures were successfully constructed on Ir(111) thin film on Si substrate with an yttria-stabilized zirconia buffer layer via intercalation approach. Such hetero-layered structures are compatible with current Si-based microelectronic technique, showing high promise for applications in future micro- and nano-electronic devices.
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Submitted 1 March, 2015;
originally announced March 2015.
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Optical signatures of silicon-vacancy spins in diamond
Authors:
Tina Muller,
Christian Hepp,
Benjamin Pingault,
Elke Neu,
Stefan Gsell,
Matthias Schreck,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Christoph Becher,
Mete Atature
Abstract:
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of t…
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Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to include different materials for their nanofabrication opportunities, and novel colour centres to realize more efficient spin-photon quantum interfaces. Of these, the silicon-vacancy centre stands out with ultrabright single photon emission predominantly into the desirable zero-phonon line. The challenge for utilizing this centre is to realise the hitherto elusive optical access to its electronic spin. Here, we report spin-tagged resonance fluorescence from the negatively charged silicon-vacancy centre. In low-strain bulk diamond spin-selective excitation under finite magnetic field reveals a spin-state purity approaching unity in the excited state. We also investigate the effect of strain on the centres in nanodiamonds and discuss how spin selectivity in the excited state remains accessible in this regime.
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Submitted 10 December, 2013;
originally announced December 2013.
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Low temperature investigations of single silicon vacancy colour centres in diamond
Authors:
Elke Neu,
Christian Hepp,
Michael Hauschild,
Stefan Gsell,
Martin Fischer,
Hadwig Sternschulte,
Doris Steinmueller-Nethl,
Matthias Schreck,
Christoph Becher
Abstract:
We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. Th…
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We study single silicon vacancy (SiV) centres in chemical vapour deposition (CVD) nanodiamonds on iridium as well as an ensemble of SiV centres in a high quality, low stress CVD diamond film by using temperature dependent luminescence spectroscopy in the temperature range 5-295 K. We investigate in detail the temperature dependent fine structure of the zero-phonon-line (ZPL) of the SiV centres. The ZPL transition is affected by inhomogeneous as well as temperature dependent homogeneous broadening and blue shifts by about 20 cm-1 upon cooling from room temperature to 5 K. We employ excitation power dependent g(2) measurements to explore the temperature dependent internal population dynamics of single SiV centres and infer almost temperature independent dynamics.
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Submitted 4 March, 2013; v1 submitted 11 October, 2012;
originally announced October 2012.
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Electronic transitions of single silicon vacancy centers in the near-infrared spectral region
Authors:
Elke Neu,
Roland Albrecht,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher
Abstract:
Photoluminescence (PL) spectra of single silicon vacancy (SiV) centers frequently feature very narrow room temperature PL lines in the near-infrared (NIR) spectral region, mostly between 820 nm and 840 nm, in addition to the well known zero-phonon-line (ZPL) at approx. 738 nm [E. Neu et al., Phys. Rev. B 84, 205211 (2011)]. We here exemplarily prove for a single SiV center that this NIR PL is due…
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Photoluminescence (PL) spectra of single silicon vacancy (SiV) centers frequently feature very narrow room temperature PL lines in the near-infrared (NIR) spectral region, mostly between 820 nm and 840 nm, in addition to the well known zero-phonon-line (ZPL) at approx. 738 nm [E. Neu et al., Phys. Rev. B 84, 205211 (2011)]. We here exemplarily prove for a single SiV center that this NIR PL is due to an additional purely electronic transition (ZPL). For the NIR line at 822.7 nm, we find a room temperature linewidth of 1.4 nm (2.6 meV). The line saturates at similar excitation power as the ZPL. ZPL and NIR line exhibit identical polarization properties. Cross-correlation measurements between the ZPL and the NIR line reveal anti-correlated emission and prove that the lines originate from a single SiV center, furthermore indicating a fast switching between the transitions (0.7 ns). g(2) auto-correlation measurements exclude that the NIR line is a vibronic sideband or that it arises due to a transition from/to a meta-stable (shelving) state.
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Submitted 11 June, 2012; v1 submitted 23 April, 2012;
originally announced April 2012.
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Reentrant superconductivity in superconductor/ferromagnetic-alloy bilayers
Authors:
V. I. Zdravkov,
J. Kehrle,
G. Obermeier,
S. Gsell,
M. Schreck,
C. M üller,
H. A. Krug von Nidda,
J. Lindner,
J. Moosburger-Will,
E. Nold,
R. Morari,
V. V. Ryazanov,
A. S. Sidorenko,
S. Horn,
R. Tidecks,
L. R. Tagirov
Abstract:
We studied the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) like state establishing due to the proximity effect in superconducting Nb/Cu41Ni59 bilayers. Using a special wedge-type deposition technique, series of 20-35 samples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few nanometers, the composition of the alloy, and the quality of interfaces were controll…
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We studied the Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) like state establishing due to the proximity effect in superconducting Nb/Cu41Ni59 bilayers. Using a special wedge-type deposition technique, series of 20-35 samples could be fabricated by magnetron sputtering during one run. The layer thickness of only a few nanometers, the composition of the alloy, and the quality of interfaces were controlled by Rutherford backscattering spectrometry, high resolution transmission electron microscopy, and Auger spectroscopy. The magnetic properties of the ferromagnetic alloy layer were characterized with superconducting quantum interference device (SQUID) magnetometry. These studies yield precise information about the thickness, and demonstrate the homogeneity of the alloy composition and magnetic properties along the sample series. The dependencies of the critical temperature on the Nb and Cu41Ni59 layer thickness, Tc(dS) and Tc(dF), were investigated for constant thickness dF of the magnetic alloy layer and dS of the superconducting layer, respectively. All types of non-monotonic behaviors of Tc versus dF predicted by the theory could be realized experimentally: from reentrant superconducting behavior with a broad extinction region to a slight suppression of superconductivity with a shallow minimum. Even a double extinction of superconductivity was observed, giving evidence for the multiple reentrant behavior predicted by theory. All critical temperature curves were fitted with suitable sets of parameters. Then, Tc(dF) diagrams of a hypothetical F/S/F spin-switch core structure were calculated using these parameters. Finally, superconducting spin-switch fabrication issues are discussed in detail in view of the achieved results.
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Submitted 13 September, 2011;
originally announced September 2011.
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Fluorescence and polarization spectroscopy of single silicon vacancy centers in heteroepitaxial nanodiamonds on iridium
Authors:
Elke Neu,
Martin Fischer,
Stefan Gsell,
Matthias Schreck,
Christoph Becher
Abstract:
We introduce an advanced material system for the production and spectroscopy of single silicon vacancy (SiV) color centers in diamond. We use microwave plasma chemical vapor deposition to synthesize heteroepitaxial nanodiamonds of approx. 160 nm in lateral size with a thickness of approx. 75 nm. These oriented 'nanoislands' combine the enhanced fluorescence extraction from subwavelength sized nano…
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We introduce an advanced material system for the production and spectroscopy of single silicon vacancy (SiV) color centers in diamond. We use microwave plasma chemical vapor deposition to synthesize heteroepitaxial nanodiamonds of approx. 160 nm in lateral size with a thickness of approx. 75 nm. These oriented 'nanoislands' combine the enhanced fluorescence extraction from subwavelength sized nanodiamonds with defined crystal orientation. The investigated SiV centers display narrow zero-phonon-lines down to 0.7 nm in the wavelength range 730-750 nm. We investigate in detail the phonon-coupling and vibronic sidebands of single SiV centers, revealing significant inhomogeneous effects. Polarization measurements reveal polarized luminescence and preferential absorption of linearly polarized light.
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Submitted 24 October, 2011; v1 submitted 18 August, 2011;
originally announced August 2011.
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Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium
Authors:
Elke Neu,
David Steinmetz,
Janine Riedrich-Moeller,
Stefan Gsell,
Martin Fischer,
Matthias Schreck,
Christoph Becher
Abstract:
We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcp…
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We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV-centres the brightest diamond based single photon sources to date. We measure for the first time the fine structure of a single SiV-centre thus confirming the atomic composition of the investigated colour centres.
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Submitted 26 November, 2010; v1 submitted 27 August, 2010;
originally announced August 2010.
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Re-entrant superconductivity in Nb/Cu(1-x)Ni(x) bilayers
Authors:
V. Zdravkov,
A. Sidorenko,
G. Obermeier,
S. Gsell,
M. Schreck,
C. Müller,
S. Horn,
R. Tidecks,
L. R. Tagirov
Abstract:
We report on the first observation of a pronounced re-entrant superconductivity phenomenon in superconductor/ferromagnetic layered systems. The results were obtained using a superconductor/ferromagnetic-alloy bilayer of Nb/Cu(1-x)Ni(x). The superconducting transition temperature T_{c} drops sharply with increasing thickness d_{CuNi} of the ferromagnetic layer, until complete suppression of super…
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We report on the first observation of a pronounced re-entrant superconductivity phenomenon in superconductor/ferromagnetic layered systems. The results were obtained using a superconductor/ferromagnetic-alloy bilayer of Nb/Cu(1-x)Ni(x). The superconducting transition temperature T_{c} drops sharply with increasing thickness d_{CuNi} of the ferromagnetic layer, until complete suppression of superconductivity is observed at d_{CuNi}= 4 nm. Increasing the Cu(1-x)Ni(x) layer thickness further, superconductivity reappears at d_{CuNi}=13 nm. Our experiments give evidence for the pairing function oscillations associated with a realization of the quasi-one dimensional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) like state in the ferromagnetic layer.
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Submitted 19 February, 2006;
originally announced February 2006.
