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The ampere and the electrical units in the quantum era
Authors:
W. Poirier,
S. Djordjevic,
F. Schopfer,
O. Thévenot
Abstract:
By fixing two fundamental constants from quantum mechanics, the Planck constant $h$ and the elementary charge $e$, the revised Système International (SI) of units endorses explicitly quantum mechanics. This evolution also highlights the importance of this theory which underpins the most accurate realization of the units. From 20 May 2019, the new definitions of the kilogram and of the ampere, base…
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By fixing two fundamental constants from quantum mechanics, the Planck constant $h$ and the elementary charge $e$, the revised Système International (SI) of units endorses explicitly quantum mechanics. This evolution also highlights the importance of this theory which underpins the most accurate realization of the units. From 20 May 2019, the new definitions of the kilogram and of the ampere, based on fixed values of $h$ and $e$ respectively, will particularly impact the electrical metrology. The Josephson effect (JE) and the quantum Hall effect (QHE), used to maintain voltage and resistance standards with unprecedented reproducibility since 1990, will henceforth provide realizations of the volt and the ohm without the uncertainties inherited from the older electromechanical definitions. More broadly, the revised SI will sustain the exploitation of quantum effects to realize electrical units, to the benefit of end-users. Here, we review the state-of-the-art of these standards and discuss further applications and perspectives.
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Submitted 24 October, 2019;
originally announced October 2019.
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Practical quantum realization of the ampere from the electron charge
Authors:
J. Brun-Picard,
S. Djordjevic,
D. Leprat,
F. Schopfer,
W. Poirier
Abstract:
One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former definition based on Ampère's force law will allow one to fully benefit from quantum physics to realize the ampere. However, a quantum realization of the ampere from \emph{e}, accurate to within $10^{-8}$ in relative value…
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One major change of the future revision of the International System of Units (SI) is a new definition of the ampere based on the elementary charge \emph{e}. Replacing the former definition based on Ampère's force law will allow one to fully benefit from quantum physics to realize the ampere. However, a quantum realization of the ampere from \emph{e}, accurate to within $10^{-8}$ in relative value and fulfilling traceability needs, is still missing despite many efforts have been spent for the development of single-electron tunneling devices. Starting again with Ohm's law, applied here in a quantum circuit combining the quantum Hall resistance and Josephson voltage standards with a superconducting cryogenic amplifier, we report on a practical and universal programmable quantum current generator. We demonstrate that currents generated in the milliampere range are quantized in terms of $ef_\mathrm{J}$ ($f_\mathrm{J}$ is the Josephson frequency) with a measurement uncertainty of $10^{-8}$. This new quantum current source, able to deliver such accurate currents down to the microampere range, can greatly improve the current measurement traceability, as demonstrated with the calibrations of digital ammeters. Beyond, it opens the way to further developments in metrology and in fundamental physics, such as a quantum multimeter or new accurate comparisons to single electron pumps.
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Submitted 13 December, 2016; v1 submitted 13 June, 2016;
originally announced June 2016.
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Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology
Authors:
R. Ribeiro-Palau,
F. Lafont,
J. Brun-Picard,
D. Kazazis,
A. Michon,
F. Cheynis,
O. Couturaud,
C. Consejo,
B. Jouault,
W. Poirier,
F. Schopfer
Abstract:
The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in…
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The quantum Hall effect (QHE) theoretically provides a universal standard of electrical resistance in terms of the Planck constant $h$ and the electron charge $e$. In graphene, the spacing between the lowest discrete energy levels occupied by the charge carriers under magnetic field is exceptionally large. This is promising for a quantum Hall resistance standard more practical in graphene than in the GaAs/AlGaAs devices currently used in national metrology institutes. Here, we demonstrate that large QHE devices, made of high quality graphene grown by propane/hydrogen chemical vapour deposition on SiC substrates, can surpass state-of-the-art GaAs/AlGaAs devices by considerable margins in their required operational conditions. In particular, in the device presented here, the Hall resistance is accurately quantized within $1\times 10^{-9}$ over a 10-T wide range of magnetic field with a remarkable lower bound at 3.5 T, temperatures as high as 10 K, or measurement currents as high as 0.5 mA. These significantly enlarged and relaxed operational conditions, with a very convenient compromise of 5 T, 5.1 K and 50 $μ$A, set the superiority of graphene for this application and for the new generation of versatile and user-friendly quantum standards, compatible with a broader industrial use. We also measured an agreement of the quantized Hall resistance in graphene and GaAs/AlGaAs with an ultimate relative uncertainty of $8.2\times 10^{-11}$. This supports the universality of the QHE and its theoretical relation to $h$ and $e$, essential for the application in metrology, particularly in view of the forthcoming Système International d'unités (SI) based on fundamental constants of physics, including the redefinition of the kilogram in terms of $h$.
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Submitted 24 April, 2015;
originally announced April 2015.
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Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
Authors:
F. Lafont,
R. Ribeiro-Palau,
D. Kazazis,
A. Michon,
O. Couturaud,
C. Consejo,
T. Chassagne,
M. Zielinski,
M. Portail,
B. Jouault,
F. Schopfer,
W. Poirier
Abstract:
Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device mad…
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Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within $10^{-9}$ in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by sublimation of Si, under higher magnetic fields. Here, we report on a device made of graphene grown by chemical vapour deposition on SiC which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron density devices.
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Submitted 20 April, 2015; v1 submitted 14 July, 2014;
originally announced July 2014.
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Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
Authors:
F. Lafont,
R. Ribeiro-Palau,
Z. Han,
A. Cresti,
A. Delvallée,
A. W. Cummings,
S. Roche,
V. Bouchiat,
S. Ducourtieux,
F. Schopfer,
W. Poirier
Abstract:
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and magnetic field dependence of the longitudinal conductivity exhibits unexpectedly smooth power law behaviors, which are incompatible with a description in…
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We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. The temperature and magnetic field dependence of the longitudinal conductivity exhibits unexpectedly smooth power law behaviors, which are incompatible with a description in terms of variable range hopping or thermal activation, but rather suggest the existence of extended or poorly localized states at energies between Landau levels. Such states could be caused by the high density of line defects (grain boundaries and wrinkles) that cross the Hall bars, as revealed by structural characterizations. Numerical calculations confirm that quasi-one-dimensional extended non-chiral states can form along such line defects and short-circuit the Hall bar chiral edge states.
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Submitted 6 October, 2014; v1 submitted 9 April, 2014;
originally announced April 2014.
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High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
Authors:
E. Pallecchi,
F. Lafont,
V. Cavaliere,
F. Schopfer,
D. Mailly,
W. Poirier,
A. Ouerghi
Abstract:
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases…
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We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm^2/Vs to > 11 000 cm^2/Vs at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10^12 cm^-2 to less than 10^12 cm^-2. For a typical large (30x280 um^2) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level fillings factors of nu = 2, 6, 10, 14.. 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at nu=2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mOhm, for measurement currents as high as 250 uA. This is very promising in the view of an application in metrology.
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Submitted 20 March, 2014;
originally announced March 2014.
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A programmable quantum current standard from the Josephson and the quantum Hall effects
Authors:
W. Poirier,
F. Lafont,
S. Djordjevic,
F. Schopfer,
L. Devoille
Abstract:
We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable…
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We propose a way to realize a programmable quantum current standard (PQCS) from the Josephson voltage standard and the quantum Hall resistance standard (QHR) exploiting the multiple connection technique provided by the quantum Hall effect (QHE) and the exactness of the cryogenic current comparator. The PQCS could lead to breakthroughs in electrical metrology like the realization of a programmable quantum current source, a quantum ampere-meter and a simplified closure of the Quantum Metrological Triangle. Moreover, very accurate universality tests of the QHE could be performed by comparing PQCS based on different QHRs.
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Submitted 30 January, 2014; v1 submitted 11 October, 2013;
originally announced October 2013.
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Quantum resistance standard accuracy close to the zero-dissipation state
Authors:
Félicien Schopfer,
Wilfrid Poirier
Abstract:
We report on a comparison of four GaAs/AlGaAs-based quantum resistance standards using an original technique adapted from the well-known Wheatstone bridge. This work shows that the quantized Hall resistance at Landau level filling factor $ν=2$ can be reproducible with a relative uncertainty of $32\times 10^{-12}$ in the dissipationless limit of the quantum Hall effect regime. In the presence of a…
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We report on a comparison of four GaAs/AlGaAs-based quantum resistance standards using an original technique adapted from the well-known Wheatstone bridge. This work shows that the quantized Hall resistance at Landau level filling factor $ν=2$ can be reproducible with a relative uncertainty of $32\times 10^{-12}$ in the dissipationless limit of the quantum Hall effect regime. In the presence of a very small dissipation characterized by a mean macroscopic longitudinal resistivity $\bar{R_{xx}(B)}$ of a few $μΩ$, the discrepancy $ΔR_{\mathrm{H}}(B)$ measured on the Hall plateau between quantum Hall resistors turns out to follow the so-called resistivity rule $\bar{R_{xx}(B)}=αB\times d(ΔR_{\mathrm{H}}(B))/dB$. While the dissipation increases with the measurement current value, the coefficient $α$ stays constant in the range investigated ($40-120 \mathrm{μA}$). This result enlightens the impact of the dissipation emergence in the two-dimensional electron gas on the Hall resistance quantization, which is of major interest for the resistance metrology. The quantum Hall effect is used to realize a universal resistance standard only linked to the electron charge \emph{e} and the Planck's constant \emph{h} and it is known to play a central role in the upcoming revised \emph{Système International} of units. There are therefore fundamental and practical benefits in testing the reproducibility property of the quantum Hall effect with better and better accuracy.
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Submitted 23 August, 2013; v1 submitted 22 January, 2013;
originally announced January 2013.
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Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
Authors:
E. Pallecchi,
M. Ridene,
D. Kazazis,
C. Mathieu,
F. Schopfer,
W. Poirier,
D. Mailly,
A. Ouerghi
Abstract:
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we…
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In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we show that a doping of $10^{13}\textrm{cm}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required.
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Submitted 12 July, 2012; v1 submitted 15 March, 2012;
originally announced March 2012.
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Quantum Hall effect in exfoliated graphene affected by charged impurities: metrological measurements
Authors:
J. Guignard,
D. Leprat,
D. C. Glattli,
F. Schopfer,
W. Poirier
Abstract:
Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$μ\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene transferred on $\textrm{Si/SiO}_{2}$ substrate. From the charge carrier density dependence of the conductivity and from the measurement of the quantum corrections at lo…
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Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$μ\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene transferred on $\textrm{Si/SiO}_{2}$ substrate. From the charge carrier density dependence of the conductivity and from the measurement of the quantum corrections at low magnetic field, we deduce that transport properties in these devices are mainly governed by the Coulomb interaction of carriers with a large concentration of charged impurities. In the QHE regime, at high magnetic field and low temperature ($T<1.3 \textrm{K}$), the Hall resistance is measured by comparison with a GaAs based quantum resistance standard using a cryogenic current comparator. In the low dissipation limit, it is found quantized within 5 parts in $10^{7}$ (one standard deviation, $1 σ$) at the expected rational fractions of the von Klitzing constant, respectively $R_{\mathrm{K}}/2$ and $R_{\mathrm{K}}/4$ in the ML and BL devices. These results constitute the most accurate QHE quantization tests to date in monolayer and bilayer exfoliated graphene. It turns out that a main limitation to the quantization accuracy, which is found well above the $10^{-9}$ accuracy usually achieved in GaAs, is the low value of the QHE breakdown current being no more than $1 μ\mathrm{A}$. The current dependence of the longitudinal conductivity investigated in the BL Hall bar shows that dissipation occurs through quasi-elastic inter-Landau level scattering, assisted by large local electric fields. We propose that charged impurities are responsible for an enhancement of such inter-Landau level transition rate and cause small breakdown currents.
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Submitted 23 August, 2013; v1 submitted 21 October, 2011;
originally announced October 2011.
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Dimensional crossover in quantum networks: from macroscopic to mesoscopic Physics
Authors:
Félicien Schopfer,
François Mallet,
Dominique Mailly,
Christophe Texier,
Gilles Montambaux,
Christopher Bäuerle,
Laurent Saminadayar
Abstract:
We report on magnetoconductance measurements of metallic networks of various sizes ranging from 10 to $10^{6}$ plaquettes, with anisotropic aspect ratio. Both Altshuler-Aronov-Spivak (AAS) $h/2e$ periodic oscillations and Aharonov-Bohm (AB) $h/e$ periodic oscillations are observed for all networks. For large samples, the amplitude of both oscillations results from the incoherent superposition of…
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We report on magnetoconductance measurements of metallic networks of various sizes ranging from 10 to $10^{6}$ plaquettes, with anisotropic aspect ratio. Both Altshuler-Aronov-Spivak (AAS) $h/2e$ periodic oscillations and Aharonov-Bohm (AB) $h/e$ periodic oscillations are observed for all networks. For large samples, the amplitude of both oscillations results from the incoherent superposition of contributions of phase coherent regions. When the transverse size becomes smaller than the phase coherent length $L_φ$, one enters a new regime which is phase coherent (mesoscopic) along one direction and macroscopic along the other, leading to a new size dependence of the quantum oscillations.
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Submitted 5 November, 2006;
originally announced November 2006.
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Experimental Test of the Numerical Renormalization Group Theory for Inelastic Scattering from Magnetic Impurities
Authors:
Christopher Bauerle,
Francois Mallet,
Felicien Schopfer,
Dominique Mailly,
Georg Eska,
Laurent Saminadayar
Abstract:
We present measurements of the phase coherence time \tauphi in quasi one-dimensional Au/Fe Kondo wires and compare the temperature dependence of \tauphi with a recent theory of inelastic scattering from magnetic impurities (Phys. Rev. Lett. 93, 107204 (2004)). A very good agreement is obtained for temperatures down to 0.2 $T_K$. Below the Kondo temperature $T_K$, the inverse of the phase coheren…
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We present measurements of the phase coherence time \tauphi in quasi one-dimensional Au/Fe Kondo wires and compare the temperature dependence of \tauphi with a recent theory of inelastic scattering from magnetic impurities (Phys. Rev. Lett. 93, 107204 (2004)). A very good agreement is obtained for temperatures down to 0.2 $T_K$. Below the Kondo temperature $T_K$, the inverse of the phase coherence time varies linearly with temperature over almost one decade in temperature.
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Submitted 9 January, 2006;
originally announced January 2006.
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Observation of $h/e$ conductance oscillations in disordered metallic $T_3$ network
Authors:
F. Schopfer,
F. Mallet,
C. Naud,
G. Faini,
D. Mailly,
L. Saminadayar,
C. Bäuerle
Abstract:
We report on magnetotransport measurements performed on a large metallic two-dimensional $\mathcal{T}_{3}$ network. Superimposed on the conventional Altshuler-Aronov-Spivak (AAS) oscillations of period $h/2e$, we observe clear $h/e$ oscillations in magnetic fields up to $8 T$. Different interpretations of this phenomenon are proposed.
We report on magnetotransport measurements performed on a large metallic two-dimensional $\mathcal{T}_{3}$ network. Superimposed on the conventional Altshuler-Aronov-Spivak (AAS) oscillations of period $h/2e$, we observe clear $h/e$ oscillations in magnetic fields up to $8 T$. Different interpretations of this phenomenon are proposed.
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Submitted 8 July, 2004;
originally announced July 2004.
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Electron Coherence in Mesoscopic Kondo Wires
Authors:
F. Schopfer,
C. Bäuerle,
W. Rabaud,
L. Saminadayar
Abstract:
We present measurements of the magnetoresistance of long and narrow quasi one-dimensional gold wires containing magnetic iron impurities. The electron phase coherence time extracted from the weak antilocalisation shows a pronounced plateau in a temperature region of 300 mK - 800 mK, associated with the phase breaking due to the Kondo effect. Below the Kondo temperature, the phase coherence time…
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We present measurements of the magnetoresistance of long and narrow quasi one-dimensional gold wires containing magnetic iron impurities. The electron phase coherence time extracted from the weak antilocalisation shows a pronounced plateau in a temperature region of 300 mK - 800 mK, associated with the phase breaking due to the Kondo effect. Below the Kondo temperature, the phase coherence time increases, as expected in the framework of Kondo physics. At much lower temperatures, the phase coherence time saturates again, in contradiction with standard Fermi liquid theory. In the same temperature regime, the resistivity curve displays a characteristic maximum at zero magnetic field, associated with the formation of a spin glass state. We argue that the interactions between the magnetic moments are responsible for the low temperature saturation of the phase coherence time.
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Submitted 11 June, 2003;
originally announced June 2003.
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Anomalous temperature dependence of the dephasing time in mesoscopic Kondo wires
Authors:
Félicien Schopfer,
Christopher Bäuerle,
Wilfried Rabaud,
Laurent Saminadayar
Abstract:
We present measurements of the magnetoconductance of long and narrow quasi one-dimensional gold wires containing magnetic iron impurities in a temperature range extending from $15 $mK to $4.2 $K. The dephasing rate extracted from the weak antilocalisation shows a pronounced plateau in a temperature region of $300 $mK - $800 $mK, associated with the phase breaking due to the Kondo effect. Below t…
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We present measurements of the magnetoconductance of long and narrow quasi one-dimensional gold wires containing magnetic iron impurities in a temperature range extending from $15 $mK to $4.2 $K. The dephasing rate extracted from the weak antilocalisation shows a pronounced plateau in a temperature region of $300 $mK - $800 $mK, associated with the phase breaking due to the Kondo effect. Below the Kondo temperature the dephasing rate decreases linearly with temperature, in contradiction with standard Fermi-liquid theory. Our data suggest that the formation of a spin glass due to the interactions between the magnetic moments are responsible for the observed anomalous temperature dependence.
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Submitted 17 December, 2002;
originally announced December 2002.
