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Imaging the Acceptor Wave Function Anisotropy in Silicon
Authors:
Manuel Siegl,
Julian Zanon,
Joseph Sink,
Adonai Rodrigues da Cruz,
Holly Hedgeland,
Neil J. Curson,
Michael E. Flatté,
Steven R. Schofield
Abstract:
We present the first scanning tunneling microscopy (STM) images of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square ring-like features in STM images and originate from near-surface defects introduced by high-energy bismuth implantation into a silicon (001) wafer. Scanning tunneling spectroscopy confirms the formation of a p-type surface. Effective-mass and tigh…
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We present the first scanning tunneling microscopy (STM) images of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square ring-like features in STM images and originate from near-surface defects introduced by high-energy bismuth implantation into a silicon (001) wafer. Scanning tunneling spectroscopy confirms the formation of a p-type surface. Effective-mass and tight-binding calculations provide an excellent description of the observed square ring-like features, confirming their acceptor character and attributing their symmetry to the light- and heavy-hole band degeneracy in silicon. Detailed understanding of the energetic and spatial properties of acceptor wave functions in silicon is essential for engineering large-scale acceptor-based quantum devices.
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Submitted 19 May, 2025;
originally announced May 2025.
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Element-specific, non-destructive profiling of layered heterostructures
Authors:
Nicolò D'Anna,
Jamie Bragg,
Elizabeth Skoropata,
Nazareth Ortiz Hernández,
Aidan G. McConnell,
Maël Clémence,
Hiroki Ueda,
Procopios C. Constantinou,
Kieran Spruce,
Taylor J. Z. Stock,
Sarah Fearn,
Steven R. Schofield,
Neil J. Curson,
Dario Ferreira Sanchez,
Daniel Grolimund,
Urs Staub,
Guy Matmon,
Simon Gerber,
Gabriel Aeppli
Abstract:
Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high…
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Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high energy X-ray photoemission spectroscopy, and secondary ion mass spectrometry. However, profiling thin layers with nm or sub-nm thickness, e.g. atomically thin dopant layers ($δ$-layers), of impurities required for modulation doping and spin-based quantum and classical information technologies is more challenging.
Here, we present theory and experiment showing how resonant-contrast X-ray reflectometry meets this challenge. The technique takes advantage of the change in the scattering factor of atoms as their core level resonances are scanned by varying the X-ray energy. We demonstrate the capability of the resulting element-selective, non-destructive profilometry for single arsenic $δ$-layers within silicon, and show that the sub-nm electronic thickness of the $δ$-layers corresponds to sub-nm chemical thickness. In combination with X-ray fluorescence imaging, this enables non-destructive three-dimensional characterization of nano-structured quantum devices. Due to the strong resonances at soft X-ray wavelengths, the technique is also ideally suited to characterize layered quantum materials, such as cuprates or the topical infinite-layer nickelates.
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Submitted 2 October, 2024; v1 submitted 30 September, 2024;
originally announced October 2024.
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Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication
Authors:
Taylor J. Z. Stock,
Oliver Warschkow,
Procopios C. Constantinou,
David R. Bowler,
Steven R. Schofield,
Neil J. Curson
Abstract:
Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulato…
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Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulators and universal solid-state quantum computers. In this work, we report precise and repeatable, substitutional incorporation of single arsenic atoms into a silicon lattice. We employ a combination of scanning tunnelling microscopy hydrogen resist lithography and a detailed statistical exploration of the chemistry of arsine on the hydrogen terminated silicon (001) surface, to show that single arsenic dopants can be deterministically placed within four silicon lattice sites and incorporated with 97$\pm$2% yield. These findings bring us closer to the ultimate frontier in semiconductor technology: the deterministic assembly of atomically precise dopant and qubit arrays at arbitrarily large scales.
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Submitted 9 November, 2023;
originally announced November 2023.
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Resistless EUV lithography: photon-induced oxide patterning on silicon
Authors:
Li-Ting Tseng,
Prajith Karadan,
Dimitrios Kazazis,
Procopios C. Constantinou,
Taylor J. Z. Stock,
Neil J. Curson,
Steven R. Schofield,
Matthias Muntwiler,
Gabriel Aeppli,
Yasin Ekinci
Abstract:
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons ca…
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In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially H-terminated Si surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the H-desorption in scanning tunneling microscopy-based lithography. We achieve SiO2/Si gratings with 75 nm half-pitch and 31 nm height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nm-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.
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Submitted 2 October, 2023;
originally announced October 2023.
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Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
Authors:
Procopios Constantinou,
Taylor J. Z. Stock,
Eleanor Crane,
Alexander Kölker,
Marcel van Loon,
Juerong Li,
Sarah Fearn,
Henric Bornemann,
Nicolò D'Anna,
Andrew J. Fisher,
Vladimir N. Strocov,
Gabriel Aeppli,
Neil J. Curson,
Steven R. Schofield
Abstract:
Two-dimensional dopant layers ($δ$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron…
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Two-dimensional dopant layers ($δ$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron spectral function that can be measured by angle-resolved photoemission spectroscopy (ARPES). Here, buried 2DEL $δ$-layers in silicon are measured with soft X-ray (SX) ARPES to obtain detailed information about their filled conduction bands and extract device-relevant properties. This study takes advantage of the larger probing depth and photon energy range of SX-ARPES relative to vacuum ultraviolet (VUV) ARPES to accurately measure the $δ$-layer electronic confinement. The measurements are made on ambient-exposed samples and yield extremely thin ($\approx 1$ $nm$) and dense ($\approx$ $10^{14}$ $cm^2$) 2DELs. Critically, this method is used to show that $δ$-layers of arsenic exhibit better electronic confinement than $δ$-layers of phosphorus fabricated under identical conditions.
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Submitted 29 September, 2023;
originally announced September 2023.
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Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Authors:
Nicolò D'Anna,
Dario Ferreira Sanchez,
Guy Matmon,
Jamie Bragg,
Procopios C. Constantinou,
Taylor J. Z. Stock,
Sarah Fearn,
Steven R. Schofield,
Neil J. Curson,
Marek Bartkowiak,
Y. Soh,
Daniel Grolimund,
Simon Gerber,
Gabriel Aeppli
Abstract:
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for b…
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The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for building more complex nano-scale devices, such as quantum co-processors, remains an unresolved challenge. Here we exploit X-ray fluorescence to create an element-specific image of As dopants in silicon, with dopant densities in absolute units and a resolution limited by the beam focal size (here $\sim1~μ$m), without affecting the device's low temperature electronic properties. The As densities provided by the X-ray data are compared to those derived from Hall effect measurements as well as the standard non-repeatable, scanning tunnelling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X-ray experiments, we also measured the magneto-conductance, dominated by weak localisation, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the $1.5\times10^{10}$ Sv ($1.5\times10^{16}$ Rad/cm$^{-2}$) exposure of the device to X-rays, all transport data were unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation-induced motion of the typical As atom and 3$\%$ for the loss of activated, carrier-contributing dopants. With next generation synchrotron radiation sources and more advanced optics, we foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5 nm.
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Submitted 14 April, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Room temperature donor incorporation for quantum devices: arsine on germanium
Authors:
Emily V. S. Hofmann,
Taylor J. Z. Stock,
Oliver Warschkow,
Rebecca Conybeare,
Neil J. Curson,
Steven R. Schofield
Abstract:
Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focussed on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but…
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Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focussed on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but the low success rate for this step has been shown to be a fundamental limitation prohibiting the scale-up to large-scale devices. Here, we present a comprehensive study of arsine (AsH$_3$) on the germanium (001) surface. We show that, unlike any previously studied dopant precursor on silicon or germanium, arsenic atoms fully incorporate into substitutional surface lattice sites at room temperature. Our results pave the way for the next generation of atomic-scale donor devices combining the superior electronic properties of germanium with the enhanced properties of arsine/germanium chemistry that promises scale-up to large numbers of deterministically-placed qubits.
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Submitted 16 March, 2022;
originally announced March 2022.
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Substitutional tin acceptor states in black phosphorus
Authors:
Mark Wentink,
Julian Gaberle,
Martik Aghajanian,
Arash A. Mostofi,
Neil J. Curson,
Johannes Lischner,
Steven R. Schofield,
Alexander L. Shluger,
Anthony J. Kenyon
Abstract:
Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reveal the presence of long-ranged double-lobed defect features superimposed onto the surface atomic lattice. We show that both the p-type doping of BP an…
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Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reveal the presence of long-ranged double-lobed defect features superimposed onto the surface atomic lattice. We show that both the p-type doping of BP and the defect features observed in STM images can be attributed to substitutional tin impurities. We show that black phosphorus samples produced through two common synthesis pathways contain tin impurities, and we demonstrate that the ground state of substitutional tin impurities is negatively charged for a wide range of Fermi level positions within the BP bandgap. The localised negative charge of the tin impurities induces hydrogenic states in the bandgap and it is the 2p level that sits at the valence band edge that gives rise to the double-lobed features observed in STM images.
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Submitted 19 October, 2021;
originally announced October 2021.
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Charge density waves in electron-doped molybdenum disulfide
Authors:
Mohammed K. Bin Subhan,
Asif Suleman,
Gareth Moore,
Peter Phu,
Moritz Hoesch,
Hidekazu Kurebayashi,
Christopher A. Howard,
Steven R. Schofield
Abstract:
We present the discovery of a charge density wave (CDW) ground state in heavily electron-doped molybdenum disulfide (MoS$_2$). This is the first observation of a CDW in any $d^2$ (column 6) transition metal dichalcogenide (TMD). The band structure of MoS$_2$ is distinct from the $d^0$ and $d^1$ TMDs in which CDWs have been previously observed, facilitating new insight into CDW formation. We demons…
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We present the discovery of a charge density wave (CDW) ground state in heavily electron-doped molybdenum disulfide (MoS$_2$). This is the first observation of a CDW in any $d^2$ (column 6) transition metal dichalcogenide (TMD). The band structure of MoS$_2$ is distinct from the $d^0$ and $d^1$ TMDs in which CDWs have been previously observed, facilitating new insight into CDW formation. We demonstrate a metal-insulator transition at 85 K, a 25 meV gap at the Fermi level, and two distinct CDW modulations, $(2\sqrt{3}\times2\sqrt{3})$R$30^\circ$ and $2\times2$, attributable to Fermi surface nesting (FSN) and electron-phonon coupling (EPC), respectively. This simultaneous exhibition of FSN and EPC CDW modulations is unique among observations of CDW ground states, and we discuss this in the context of band folding. Our observations provide a route toward the resolution of controversies surrounding the origin of CDW modulations in TMDs.
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Submitted 16 August, 2021;
originally announced August 2021.
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2D-3D crossover in a dense electron liquid in silicon
Authors:
Guy Matmon,
Eran Ginossar,
Byron J. Villis,
Alex Kölker,
Tingbin Lim,
Hari Solanki,
Steven R. Schofield,
Neil J. Curson,
Juerong Li,
Ben N. Murdin,
Andrew J. Fisher,
Gabriel Aeppli
Abstract:
Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$)…
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Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$) disordered two-dimensional array of P atoms, the full field angle-dependent magnetostransport is remarkably well described by classic weak localization theory with no corrections due to interaction effects. The two- to three-dimensional cross-over seen upon warming can also be interpreted using scaling concepts, developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.
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Submitted 15 February, 2018; v1 submitted 14 February, 2018;
originally announced February 2018.
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Exact location of dopants below the Si(001):H surface from scanning tunnelling microscopy and density functional theory
Authors:
Veronika Brazdova,
David R. Bowler,
Kitiphat Sinthiptharakoon,
Philipp Studer,
Adam Rahnejat,
Neil J. Curson,
Steven R. Schofield,
Andrew J. Fisher
Abstract:
Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding new applications in coherent quantum devices, thanks to the magnetically quiet environment it provides for the impurity orbitals. The ionization energies and the…
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Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding new applications in coherent quantum devices, thanks to the magnetically quiet environment it provides for the impurity orbitals. The ionization energies and the shape of the dopant orbitals depend on the surfaces and interfaces with which they interact. The location of the dopant and local environment effects will therefore determine the functionality of both future quantum information processors and next-generation semiconductor devices. Here we match observed dopant wavefunctions from low-temperature scanning tunnelling microscopy (STM) to images simulated from first-principles density functional theory (DFT) calculations. By this combination of experiment and theory we precisely determine the substitutional sites of neutral As dopants between 5 and 15A below the Si(001):H surface. In the process we gain a full understanding of the interaction of the donor-electron state with the surface, and hence of the transition between the bulk dopant (with its delocalised hydrogenic orbital) and the previously studied dopants in the surface layer.
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Submitted 27 January, 2017; v1 submitted 14 December, 2015;
originally announced December 2015.
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Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(001)
Authors:
Kane M. O'Donnell,
Oliver Warschkow,
Asif Suleman,
Adam Fahy,
Lars Thomsen,
Steven R. Schofield
Abstract:
We investigate the chemical and structural configuration of acetophenone on Si(001) using synchrotron radiation core-level spectroscopy techniques and density functional theory calculations. Samples were prepared by vapour phase dosing of clean Si(001) surfaces with acetophenone in ultrahigh vacuum. Near edge X-ray adsorption fine structure spectroscopy and photoelectron spectroscopy measurements…
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We investigate the chemical and structural configuration of acetophenone on Si(001) using synchrotron radiation core-level spectroscopy techniques and density functional theory calculations. Samples were prepared by vapour phase dosing of clean Si(001) surfaces with acetophenone in ultrahigh vacuum. Near edge X-ray adsorption fine structure spectroscopy and photoelectron spectroscopy measurements were made at room temperature as a function of coverage density and post-deposition anneal temperature. We show that the dominant room temperature adsorption structure lies flat on the substrate, while moderate thermal annealing induces the breaking of Si-C bonds between the phenyl ring and the surface resulting in the reorientation of the adsorbate into an upright configuration.
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Submitted 3 July, 2014;
originally announced July 2014.
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Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy
Authors:
Kitiphat Sinthiptharakoon,
Steven R. Schofield,
Philipp Studer,
Veronika Brázdová,
Cyrus F. Hirjibehedin,
David R. Bowler,
Neil J. Curson
Abstract:
We study sub-surface arsenic dopants in a hydrogen terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant related features that fall into two classes, which we call As1 and As2. When imaged in occupied states the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography, and have maximum…
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We study sub-surface arsenic dopants in a hydrogen terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant related features that fall into two classes, which we call As1 and As2. When imaged in occupied states the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography, and have maximum intensities lying along particular crystallographic orientations. In empty-state images the features all exhibit long-range circular protrusions. The images are consistent with buried dopants that are in the electrically neutral (D0) charge state when imaged in filled states, but become positively charged (D+) through electrostatic ionisation when imaged under empty state conditions, similar to previous observations of acceptors in GaAs. Density functional theory (DFT) calculations predict that As dopants in the third layer of the sample induce two states lying just below the conduction band edge, which hybridize with the surface structure creating features with the surface symmetry consistent with our STM images. The As2 features have the surprising characteristic of appearing as a protrusion in filled state images and an isotropic depression in empty state images, suggesting they are negatively charged at all biases. We discuss the possible origins of this feature.
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Submitted 25 July, 2013;
originally announced July 2013.
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Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field
Authors:
M. Bozkurt,
M. R. Mahani,
P. Studer,
J. -M. Tang,
S. R. Schofield,
N. J. Curson,
M. E Flatte,
A. Yu. Silov,
C. F. Hirjibehedin,
C. M. Canali,
P. M. Koenraad
Abstract:
We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. T…
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We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. These experimental results are supported by theoretical calculations based on a tightbinding model of Mn acceptors in GaAs. For Mn acceptors on the (110) surface and the subsurfaces immediately underneath, we find that an applied magnetic field modifies significantly the magnetic anisotropy landscape. However the acceptor hole wavefunction is strongly localized around the Mn and the LDOS is quite independent of the direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed on deeper layers below the surface, the acceptor hole wavefunction is more delocalized and the corresponding LDOS is much more sensitive on the direction of the Mn magnetic moment. However the magnetic anisotropy energy for these magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can hardly change the landscape and rotate the direction of the Mn magnetic moment away from its easy axis. We predict that substantially larger magnetic fields are required to observe a significant field-dependence of the tunneling current for impurities located several layers below the GaAs surface.
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Submitted 22 April, 2013; v1 submitted 11 April, 2013;
originally announced April 2013.
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STM characterization of the Si-P heterodimer
Authors:
N. J. Curson,
S. R. Schofield,
M. Y. Simmons,
L. Oberbeck,
J. L. O'Brien,
R. G. Clark
Abstract:
We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH$_{3}$) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with ${\sim}$0.002 Langmuirs of PH$_{3}$ results in the adsorption of PH$_{x}$ (x=2,3) onto the surface and some etchin…
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We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH$_{3}$) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with ${\sim}$0.002 Langmuirs of PH$_{3}$ results in the adsorption of PH$_{x}$ (x=2,3) onto the surface and some etching of Si to form individual Si ad-dimers. Annealing to 350$^{\circ}$C results in the incorporation of P into the surface layer to form Si-P heterodimers and the formation of short 1-dimensional Si dimer chains and monohydrides. In filled state STM images, isolated Si-P heterodimers appear as zig-zag features on the surface due to the static dimer buckling induced by the heterodimer. In the presence of a moderate coverage of monohydrides this static buckling is lifted, rending the Si-P heterodimers invisible in filled state images. However, we find that we can image the heterodimer at all H coverages using empty state imaging. The ability to identify single P atoms incorporated into Si(001) will be invaluable in the development of nanoscale electronic devices based on controlled atomic-scale doping of Si.
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Submitted 14 October, 2003;
originally announced October 2003.
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Atomically precise placement of single dopants in Si
Authors:
S. R. Schofield,
N. J. Curson,
M. Y. Simmons,
F. J. Ruess,
T. Hallam,
L. Oberbeck,
R. G. Clark
Abstract:
We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are inc…
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We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H-lithography. We demonstrate the positioning of single P atoms in Si with ~ 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.
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Submitted 23 July, 2003;
originally announced July 2003.
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Split-off dimer defects on the Si(001)2x1 surface
Authors:
S. R. Schofield,
N. A. Marks,
N. J. Curson,
J. L. O'Brien,
G. W. Brown,
M. Y. Simmons,
R. G. Clark,
M. E. Hawley,
H. F. Wilson
Abstract:
Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated 'split-off' dimers in these defect complexes are imaged as pairs of protrusions while the surrounding Si surface dimers appear as the usual 'bean-shaped' protr…
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Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated 'split-off' dimers in these defect complexes are imaged as pairs of protrusions while the surrounding Si surface dimers appear as the usual 'bean-shaped' protrusions. We attribute this to the formation of pi-bonds between the two atoms of the split-off dimer and second layer atoms, and present charge density plots to support this assignment. We observe a local brightness enhancement due to strain for different DV complexes and provide the first experimental confirmation of an earlier prediction that the 1+2-DV induces less surface strain than other DV complexes. Finally, we present a previously unreported triangular shaped split-off dimer defect complex that exists at SB-type step edges, and propose a structure for this defect involving a bound Si monomer.
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Submitted 5 May, 2003;
originally announced May 2003.
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Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
Authors:
L. Oberbeck,
N. J. Curson,
M. Y. Simmons,
R. Brenner,
A. R. Hamilton,
S. R. Schofield,
R. G. Clark
Abstract:
The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by phosphine saturation dosing of a Si(100) surface at room temperature, a critical annealing step to incorporate phosphorus atoms, and subsequent epitaxial sil…
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The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by phosphine saturation dosing of a Si(100) surface at room temperature, a critical annealing step to incorporate phosphorus atoms, and subsequent epitaxial silicon overgrowth. We observe minimal dopant segregation (5 nm), complete electrical activation at a silicon growth temperature of 250 degrees C and a high two-dimensional electron mobility of 100 cm2/Vs at a temperature of 4.2 K. These results, along with preliminary studies aimed at further minimizing dopant diffusion, bode well for the fabrication of atomically precise dopant arrays in silicon such as those found in recent solid-state quantum computer architectures.
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Submitted 19 August, 2002;
originally announced August 2002.
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Towards the fabrication of phosphorus qubits for a silicon quantum computer
Authors:
J. L. O'Brien,
S. R. Schofield,
M. Y. Simmons,
R. G. Clark,
A. S. Dzurak,
N. J. Curson,
B. E. Kane,
N. S. McAlpine,
M. E. Hawley,
G. W. Brown
Abstract:
The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of suc…
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The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of such devices however requires atomic scale manipulation - an immense technological challenge. We demonstrate that it is possible to fabricate an atomically-precise linear array of single phosphorus bearing molecules on a silicon surface with the required dimensions for the fabrication of a silicon-based quantum computer. We also discuss strategies for the encapsulation of these phosphorus atoms by subsequent silicon crystal growth.
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Submitted 30 April, 2001;
originally announced April 2001.
