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Showing 1–19 of 19 results for author: Schofield, S

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  1. arXiv:2505.13041  [pdf, ps, other

    cond-mat.mes-hall

    Imaging the Acceptor Wave Function Anisotropy in Silicon

    Authors: Manuel Siegl, Julian Zanon, Joseph Sink, Adonai Rodrigues da Cruz, Holly Hedgeland, Neil J. Curson, Michael E. Flatté, Steven R. Schofield

    Abstract: We present the first scanning tunneling microscopy (STM) images of hydrogenic acceptor wave functions in silicon. These acceptor states appear as square ring-like features in STM images and originate from near-surface defects introduced by high-energy bismuth implantation into a silicon (001) wafer. Scanning tunneling spectroscopy confirms the formation of a p-type surface. Effective-mass and tigh… ▽ More

    Submitted 19 May, 2025; originally announced May 2025.

    Comments: 19 pages, 3 figures

  2. arXiv:2410.00241  [pdf, other

    quant-ph cond-mat.mes-hall cond-mat.mtrl-sci

    Element-specific, non-destructive profiling of layered heterostructures

    Authors: Nicolò D'Anna, Jamie Bragg, Elizabeth Skoropata, Nazareth Ortiz Hernández, Aidan G. McConnell, Maël Clémence, Hiroki Ueda, Procopios C. Constantinou, Kieran Spruce, Taylor J. Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Dario Ferreira Sanchez, Daniel Grolimund, Urs Staub, Guy Matmon, Simon Gerber, Gabriel Aeppli

    Abstract: Fabrication of semiconductor heterostructures is now so precise that metrology has become a key challenge for progress in science and applications. It is now relatively straightforward to characterize classic III-V and group IV heterostructures consisting of slabs of different semiconductor alloys with thicknesses of $\sim$5 nm and greater using sophisticated tools such as X-ray diffraction, high… ▽ More

    Submitted 2 October, 2024; v1 submitted 30 September, 2024; originally announced October 2024.

  3. arXiv:2311.05752  [pdf

    cond-mat.mtrl-sci

    Single-Atom Control of Arsenic Incorporation in Silicon for High-Yield Artificial Lattice Fabrication

    Authors: Taylor J. Z. Stock, Oliver Warschkow, Procopios C. Constantinou, David R. Bowler, Steven R. Schofield, Neil J. Curson

    Abstract: Artificial lattices constructed from individual dopant atoms within a semiconductor crystal hold promise to provide novel materials with tailored electronic, magnetic, and optical properties. These custom engineered lattices are anticipated to enable new, fundamental discoveries in condensed matter physics and lead to the creation of new semiconductor technologies including analog quantum simulato… ▽ More

    Submitted 9 November, 2023; originally announced November 2023.

  4. arXiv:2310.01268  [pdf

    physics.app-ph cond-mat.mtrl-sci

    Resistless EUV lithography: photon-induced oxide patterning on silicon

    Authors: Li-Ting Tseng, Prajith Karadan, Dimitrios Kazazis, Procopios C. Constantinou, Taylor J. Z. Stock, Neil J. Curson, Steven R. Schofield, Matthias Muntwiler, Gabriel Aeppli, Yasin Ekinci

    Abstract: In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons ca… ▽ More

    Submitted 2 October, 2023; originally announced October 2023.

    Comments: 15 pages, 7 figures

    Journal ref: L.-T. Tseng, Science Advances, Vol 9, eadf5997 (2023)

  5. arXiv:2309.17413  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall quant-ph

    Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon

    Authors: Procopios Constantinou, Taylor J. Z. Stock, Eleanor Crane, Alexander Kölker, Marcel van Loon, Juerong Li, Sarah Fearn, Henric Bornemann, Nicolò D'Anna, Andrew J. Fisher, Vladimir N. Strocov, Gabriel Aeppli, Neil J. Curson, Steven R. Schofield

    Abstract: Two-dimensional dopant layers ($δ$-layers) in semiconductors provide the high-mobility electron liquids (2DELs) needed for nanoscale quantum-electronic devices. Key parameters such as carrier densities, effective masses, and confinement thicknesses for 2DELs have traditionally been extracted from quantum magnetotransport. In principle, the parameters are immediately readable from the one-electron… ▽ More

    Submitted 29 September, 2023; originally announced September 2023.

    Comments: Published in Advanced Science as a Research Article

  6. arXiv:2208.09379  [pdf, other

    quant-ph cond-mat.mtrl-sci cond-mat.str-el

    Non-destructive X-ray imaging of patterned delta-layer devices in silicon

    Authors: Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon, Jamie Bragg, Procopios C. Constantinou, Taylor J. Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Marek Bartkowiak, Y. Soh, Daniel Grolimund, Simon Gerber, Gabriel Aeppli

    Abstract: The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for b… ▽ More

    Submitted 14 April, 2023; v1 submitted 19 August, 2022; originally announced August 2022.

    Journal ref: Adv. Electron. Mater. 2023, 2201212

  7. arXiv:2203.08769  [pdf, other

    cond-mat.mtrl-sci cond-mat.mes-hall quant-ph

    Room temperature donor incorporation for quantum devices: arsine on germanium

    Authors: Emily V. S. Hofmann, Taylor J. Z. Stock, Oliver Warschkow, Rebecca Conybeare, Neil J. Curson, Steven R. Schofield

    Abstract: Germanium has emerged as an exceptionally promising material for spintronics and quantum information applications, with significant fundamental advantages over silicon. However, efforts to create atomic-scale devices using donor atoms as qubits have largely focussed on phosphorus in silicon. Positioning phosphorus in silicon with atomic-scale precision requires a thermal incorporation anneal, but… ▽ More

    Submitted 16 March, 2022; originally announced March 2022.

    Comments: 8 pages, 4 figures, plus 2 pages supplementary information and 1 supplementary figure

  8. arXiv:2110.09808  [pdf, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    Substitutional tin acceptor states in black phosphorus

    Authors: Mark Wentink, Julian Gaberle, Martik Aghajanian, Arash A. Mostofi, Neil J. Curson, Johannes Lischner, Steven R. Schofield, Alexander L. Shluger, Anthony J. Kenyon

    Abstract: Nominally-pure black phosphorus (BP) is commonly found to be a p-type semiconductor, suggesting the ubiquitious presence of impurity species or intrinsic, charged defects. Moreover, scanning tunnelling microscopy (STM) images of black phosphorus reveal the presence of long-ranged double-lobed defect features superimposed onto the surface atomic lattice. We show that both the p-type doping of BP an… ▽ More

    Submitted 19 October, 2021; originally announced October 2021.

    Comments: 19 pages, 4 figures

    Journal ref: Journal of Physical Chemistry C (2021)

  9. arXiv:2108.07015  [pdf, other

    cond-mat.str-el cond-mat.mtrl-sci

    Charge density waves in electron-doped molybdenum disulfide

    Authors: Mohammed K. Bin Subhan, Asif Suleman, Gareth Moore, Peter Phu, Moritz Hoesch, Hidekazu Kurebayashi, Christopher A. Howard, Steven R. Schofield

    Abstract: We present the discovery of a charge density wave (CDW) ground state in heavily electron-doped molybdenum disulfide (MoS$_2$). This is the first observation of a CDW in any $d^2$ (column 6) transition metal dichalcogenide (TMD). The band structure of MoS$_2$ is distinct from the $d^0$ and $d^1$ TMDs in which CDWs have been previously observed, facilitating new insight into CDW formation. We demons… ▽ More

    Submitted 16 August, 2021; originally announced August 2021.

    Comments: 19 pages, 4 figures, supplementary information

    Journal ref: Nano Letters 2021, 21, 13, 5516-5521

  10. 2D-3D crossover in a dense electron liquid in silicon

    Authors: Guy Matmon, Eran Ginossar, Byron J. Villis, Alex Kölker, Tingbin Lim, Hari Solanki, Steven R. Schofield, Neil J. Curson, Juerong Li, Ben N. Murdin, Andrew J. Fisher, Gabriel Aeppli

    Abstract: Doping of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$)… ▽ More

    Submitted 15 February, 2018; v1 submitted 14 February, 2018; originally announced February 2018.

    Comments: 9 pages, 4 figures, supplementary information

    Journal ref: Phys. Rev. B 97, 155306 (2018)

  11. arXiv:1512.04377  [pdf, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    Exact location of dopants below the Si(001):H surface from scanning tunnelling microscopy and density functional theory

    Authors: Veronika Brazdova, David R. Bowler, Kitiphat Sinthiptharakoon, Philipp Studer, Adam Rahnejat, Neil J. Curson, Steven R. Schofield, Andrew J. Fisher

    Abstract: Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding new applications in coherent quantum devices, thanks to the magnetically quiet environment it provides for the impurity orbitals. The ionization energies and the… ▽ More

    Submitted 27 January, 2017; v1 submitted 14 December, 2015; originally announced December 2015.

    Comments: 12 pages; accepted for publication in Phys. Rev. B

    Journal ref: Phys. Rev. B 95, 075408 (2017)

  12. Manipulating the orientation of an organic adsorbate on silicon: a NEXAFS study of acetophenone on Si(001)

    Authors: Kane M. O'Donnell, Oliver Warschkow, Asif Suleman, Adam Fahy, Lars Thomsen, Steven R. Schofield

    Abstract: We investigate the chemical and structural configuration of acetophenone on Si(001) using synchrotron radiation core-level spectroscopy techniques and density functional theory calculations. Samples were prepared by vapour phase dosing of clean Si(001) surfaces with acetophenone in ultrahigh vacuum. Near edge X-ray adsorption fine structure spectroscopy and photoelectron spectroscopy measurements… ▽ More

    Submitted 3 July, 2014; originally announced July 2014.

    Comments: 7 figures, 16 pages

  13. arXiv:1307.6890  [pdf

    cond-mat.mes-hall

    Investigating individual arsenic dopant atoms in silicon using low-temperature scanning tunnelling microscopy

    Authors: Kitiphat Sinthiptharakoon, Steven R. Schofield, Philipp Studer, Veronika Brázdová, Cyrus F. Hirjibehedin, David R. Bowler, Neil J. Curson

    Abstract: We study sub-surface arsenic dopants in a hydrogen terminated Si(001) sample at 77 K, using scanning tunnelling microscopy and spectroscopy. We observe a number of different dopant related features that fall into two classes, which we call As1 and As2. When imaged in occupied states the As1 features appear as anisotropic protrusions superimposed on the silicon surface topography, and have maximum… ▽ More

    Submitted 25 July, 2013; originally announced July 2013.

  14. arXiv:1304.3303  [pdf, ps, other

    cond-mat.mes-hall cond-mat.mtrl-sci

    Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field

    Authors: M. Bozkurt, M. R. Mahani, P. Studer, J. -M. Tang, S. R. Schofield, N. J. Curson, M. E Flatte, A. Yu. Silov, C. F. Hirjibehedin, C. M. Canali, P. M. Koenraad

    Abstract: We investigate the effect of an external magnetic field on the physical properties of the acceptor hole states associated with single Mn acceptors placed near the (110) surface of GaAs. Crosssectional scanning tunneling microscopy images of the acceptor local density of states (LDOS) show that the strongly anisotropic hole wavefunction is not significantly affected by a magnetic field up to 6 T. T… ▽ More

    Submitted 22 April, 2013; v1 submitted 11 April, 2013; originally announced April 2013.

    Comments: None

    Journal ref: Physical Review B 88, 205203 (2013)

  15. STM characterization of the Si-P heterodimer

    Authors: N. J. Curson, S. R. Schofield, M. Y. Simmons, L. Oberbeck, J. L. O'Brien, R. G. Clark

    Abstract: We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH$_{3}$) on Si(001), as a function of annealing temperature, paying particular attention to the formation of the Si-P heterodimer. Dosing the Si(001) surface with ${\sim}$0.002 Langmuirs of PH$_{3}$ results in the adsorption of PH$_{x}$ (x=2,3) onto the surface and some etchin… ▽ More

    Submitted 14 October, 2003; originally announced October 2003.

    Comments: 6 pages, 4 figures (only 72dpi)

    Journal ref: Phys. Rev. B 69, 195303 (2004)

  16. Atomically precise placement of single dopants in Si

    Authors: S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Ruess, T. Hallam, L. Oberbeck, R. G. Clark

    Abstract: We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are inc… ▽ More

    Submitted 23 July, 2003; originally announced July 2003.

    Comments: 5 pages, 4 figures

  17. Split-off dimer defects on the Si(001)2x1 surface

    Authors: S. R. Schofield, N. A. Marks, N. J. Curson, J. L. O'Brien, G. W. Brown, M. Y. Simmons, R. G. Clark, M. E. Hawley, H. F. Wilson

    Abstract: Dimer vacancy (DV) defect complexes in the Si(001)2x1 surface were investigated using high-resolution scanning tunneling microscopy and first principles calculations. We find that under low bias filled-state tunneling conditions, isolated 'split-off' dimers in these defect complexes are imaged as pairs of protrusions while the surrounding Si surface dimers appear as the usual 'bean-shaped' protr… ▽ More

    Submitted 5 May, 2003; originally announced May 2003.

    Comments: 8 pages, 7 figures, submitted to Phys. Rev. B

    Journal ref: Phys. Rev. B 69, 085312 (2004)

  18. Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer

    Authors: L. Oberbeck, N. J. Curson, M. Y. Simmons, R. Brenner, A. R. Hamilton, S. R. Schofield, R. G. Clark

    Abstract: The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectrometry and Hall effect measurements. The samples are prepared by phosphine saturation dosing of a Si(100) surface at room temperature, a critical annealing step to incorporate phosphorus atoms, and subsequent epitaxial sil… ▽ More

    Submitted 19 August, 2002; originally announced August 2002.

    Comments: 3 pages, 4 figures

  19. Towards the fabrication of phosphorus qubits for a silicon quantum computer

    Authors: J. L. O'Brien, S. R. Schofield, M. Y. Simmons, R. G. Clark, A. S. Dzurak, N. J. Curson, B. E. Kane, N. S. McAlpine, M. E. Hawley, G. W. Brown

    Abstract: The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, using the nuclear or electron spin of dopants as qubits, are attractive due to the long spin relaxation times involved, their scalability, and the ease of integration with existing silicon technology. Fabrication of suc… ▽ More

    Submitted 30 April, 2001; originally announced April 2001.

    Comments: To Appear in Phys. Rev. B Rapid Comm. 5 pages, 5 color figures

    Journal ref: Phys. Rev. B 64, 161401(R) (2001)