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Deposition of highly-crystalline AlScN thin films using synchronized HiPIMS -- from combinatorial screening to piezoelectric devices
Authors:
Jyotish Patidar,
Kerstin Thorwarth,
Thorsten Schmitz-Kempen,
Roland Kessels,
Sebastian Siol
Abstract:
Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, textured AlScN thin films is challenging. Current approaches typically rely on high temperatures and expensive compound targets. In this study, we demonstrate the feasibility of ionized physical vapor deposition to deposi…
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Fueled by the 5G revolution, the demand for advanced radio frequency micro-electromechanical systems (MEMS) based on AlScN is growing rapidly. However, synthesizing high-quality, textured AlScN thin films is challenging. Current approaches typically rely on high temperatures and expensive compound targets. In this study, we demonstrate the feasibility of ionized physical vapor deposition to deposit highly oriented AlScN films with minimal defects at lower temperatures. Using metal-ion synchronized high-power impulse magnetron co-sputtering (MIS-HiPIMS) we can selectively bombard the growing film with Al and/or Sc ions to enhance the adatom mobility while simultaneously providing the ability to tune stress and coat complex structures conformally. We find that the Sc solubility in wurtzite AlN is slightly reduced, whereas crystallinity and texture are markedly improved. Disoriented grains, a key challenge in growing AlScN films, are completely removed via substrate biasing, while the residual stress can be tailored by adjusting the same. The measured piezoelectric response of the films is in line with DFT predictions and on par with the current state of the art. Finally, we demonstrate conformal deposition of c-axis textured AlScN on structured Si wafers underlining the promise of ionized PVD for the fabrication of advanced RF filters and next-generation MEMS devices.
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Submitted 30 April, 2024;
originally announced May 2024.
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A physical method for investigating defect chemistry in solid metal oxides
Authors:
Christian Rodenbücher,
Carsten Korte,
Thorsten Schmitz-Kempen,
Sebastian Bette,
Kristof Szot
Abstract:
The investigation of the defect chemistry of solid oxides is of central importance for the understanding of redox processes. This can be performed by measuring conductivity as a function of the oxygen partial pressure, which is conventionally established by using buffer gas mixtures or oxygen pumps based on zirconia. However, this approach has some limitations, such as difficulty regulating oxygen…
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The investigation of the defect chemistry of solid oxides is of central importance for the understanding of redox processes. This can be performed by measuring conductivity as a function of the oxygen partial pressure, which is conventionally established by using buffer gas mixtures or oxygen pumps based on zirconia. However, this approach has some limitations, such as difficulty regulating oxygen partial pressure in some intermediate-pressure regions or the possibility of influencing the redox process by gases that can also be incorporated into the oxide or react with the surface via heterogeneous catalysis. Herein, we present an alternative physical method in which the oxygen partial pressure is controlled by dosing pure oxygen inside an ultra-high vacuum chamber. To monitor the conductivity of the oxide under investigation, we employ a dedicated four-probe measurement system that relies on the application of a very small AC voltage, in combination with lock-in data acquisition using highly sensitive electrometers, minimizing the electrochemical polarization or electro-reduction and degradation effects. By analyzing the model material SrTiO3, we demonstrate that its characteristic redox behavior can be reproduced in good agreement with the theory when performing simultaneous electrical conductivity relaxation (ECR) and high-temperature equilibrium conductivity (HTEC) measurements. We show that the use of pure oxygen allows for a direct analysis of the characteristic oxygen dose, which opens up various perspectives for a detailed analysis of the surface chemistry of redox processes.
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Submitted 13 November, 2020;
originally announced November 2020.
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Correlation between electric-field-induced phase transition and piezoelectricity in lead zirconate titanate films
Authors:
V Kovacova,
N Vaxelaire,
G Le Rhun,
P Gergaud,
T Schmitz-Kempen,
E Defay
Abstract:
We observed that electric field induces phase transition from tetragonal to rhombohedral in polycrystalline morphotropic lead zirconate titanate (PZT) films, as reported in 2011 for bulk PZT. Moreover, we evidenced that this field-induced phase transition is strongly correlated with PZT film piezoelectric properties, that is to say the larger the phase transition, the larger the longitudinal piezo…
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We observed that electric field induces phase transition from tetragonal to rhombohedral in polycrystalline morphotropic lead zirconate titanate (PZT) films, as reported in 2011 for bulk PZT. Moreover, we evidenced that this field-induced phase transition is strongly correlated with PZT film piezoelectric properties, that is to say the larger the phase transition, the larger the longitudinal piezoelectric coefficient d 33,eff . Although d 33,eff is already comprised between as 150 to 170 pm/V, our observation suggests that one could obtain larger d 33,eff values, namely 250 pm/V, by optimizing the field-induced phase transition thanks to composition fine tuning.
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Submitted 26 January, 2015;
originally announced January 2015.
