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Thermal Wave Induced Edge Electrical Field of Pyroelectric: Spatial Pattern Mapping and Effect of Ambient Conditions
Authors:
A. V. Butenko,
V. Sandomirsky,
G. Chaniel,
B. Shapiro,
Y. Schlesinger,
A. Jarov,
V. A. Sablikov
Abstract:
We have recently analyzed theoretically the main characteristics of the edge depolarizing electric field (EDEF), in the vicinity of a non-polar face of a pyroelectric. In this work we measured and characterized the EDEF, excited by a harmonical thermal wave. We present here experimental results obtained on a pyroelectric crystal LiTaO3, confirming our theoretical predictions. We present the theo…
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We have recently analyzed theoretically the main characteristics of the edge depolarizing electric field (EDEF), in the vicinity of a non-polar face of a pyroelectric. In this work we measured and characterized the EDEF, excited by a harmonical thermal wave. We present here experimental results obtained on a pyroelectric crystal LiTaO3, confirming our theoretical predictions. We present the theoretical analysis and description of the thermal wave and the induced harmonically varying EDEF. The calculations assume an equivalent circuit of a pyroelectric capacitive current source. The measured magnitude of the EDEF and its spatial variation agree well with the theoretical model. The effect of the air pressure at the pyroelectric/air interface, on the EDEF, was determined in the interval 10^3 - 10^-6 torr. We found that EDEF increases significantly with decreasing air pressure, presumably due to diminishing of adsorption screening at the polar faces. Teflon plates, covering the polar faces, prevent accumulation of screening charged particles, resulting in a drastic increase of EDEF.
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Submitted 11 October, 2009;
originally announced October 2009.
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Enhancement of Voltage, Ion current and Neutron Yield in Pyroelectric Accelerators
Authors:
V. Sandomirsky,
A. V. Butenko,
Y. Schlesinger,
R. Levin
Abstract:
Utilization of current pyroelectric accelerators (PEA) is limited due to low ion current and neutron generation yields. Current design, using pyroelectrics (PE) with high pyrocoefficient (p), having high dielectric constant (e), limits the figure-of-merit. We present detailed analysis of a modified structure of PEA, providing the highest attainable voltage and ion current. In the paired configur…
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Utilization of current pyroelectric accelerators (PEA) is limited due to low ion current and neutron generation yields. Current design, using pyroelectrics (PE) with high pyrocoefficient (p), having high dielectric constant (e), limits the figure-of-merit. We present detailed analysis of a modified structure of PEA, providing the highest attainable voltage and ion current. In the paired configuration, using metal plates covering the polar faces, with grounded back plates, the accelerating voltage and electric field are proportional to p and do not depend on e. Therefore, in the modified structure, PE with high p significantly increases the ion and neutron yields.
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Submitted 2 April, 2009;
originally announced April 2009.
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Experimental and Theoretical Investigation of the Barrier Pyroelectric Effect in a Quantum Paraelectric Semiconductor
Authors:
A. V. Butenko,
V. Sandomirsky,
R. Kahatabi,
Z. Dashevsky,
V. Kasiyan,
Z. Zalevsky,
Y. Schlesinger
Abstract:
We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High quality PbTe p-n junctions have been prepared specifically for this experiment. The pyroelectric effect was excited by a continuous CO2 laser beam,…
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We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High quality PbTe p-n junctions have been prepared specifically for this experiment. The pyroelectric effect was excited by a continuous CO2 laser beam, modulated by a mechanical chopper. The shape and amplitude of the periodic and single-pulse pyroelectric signals were studied as a function of temperature (10K-130K), reverse bias voltage (up to -500 mV) and chopping frequency (4Hz-2000Hz). The pyroelectric coefficient is about 10^(-3) microC/cm2K in the temperature region 40 - 80 K. The developed theoretical model quantitatively describes all the experimental features of the observed pyroelectric effect. The time evolution of the temperature within the p-n junction was reconstructed.
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Submitted 11 August, 2008;
originally announced August 2008.
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Pyroelectric Effect Induced by the Built-in Field in the p-n Junction of the Quantum Paraelectric PbTe: Experimental Study
Authors:
A. V. Butenko,
V. Sandomirsky,
R. Kahatabi,
Y. Schlesinger,
Z. Dashevsky,
V. Kasiyan
Abstract:
We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction. The junction was illuminated by a chopped CO2 laser beam, and periodic and single-pulse pyroelectric signals were observed and measured as a function of temperature, reverse bias voltage and chopper frequency. The mea…
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We report here the first observation of a pyroelectric effect in a non-polar semiconductor. This effect originates in the temperature dependent electric dipole of the p-n junction. The junction was illuminated by a chopped CO2 laser beam, and periodic and single-pulse pyroelectric signals were observed and measured as a function of temperature, reverse bias voltage and chopper frequency. The measured pyroelectric coefficient is about 10^(-3) microC/cm2K in the region of 40-80 K. The theoretical model describes quantitatively all experimental features. The time evolution of the temperature inside the junction region was reconstructed.
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Submitted 12 July, 2007;
originally announced July 2007.
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High-temperature PbTe diodes
Authors:
Z. Dashevsky,
V. Kasiyan,
E. Mogilko,
A. Butenko,
R. Kahatabi,
S. Genikov,
V. Sandomirsky,
Y. Schlesinger
Abstract:
We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias…
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We describe the preparation of high-temperature PbTe diodes. Satisfactory rectification was observed up to 180-200 K. Two types of diodes, based on a p-PbTe single crystal, were prepared: (1) by In ion-implantation, and (2) by thermodiffusion of In. Measurements were carried-out from ~ 10 K to ~ 200 K. The ion-implanted diodes exhibit a satisfactorily low saturation current up to a reverse bias of ~ 400 mV, and the thermally diffused junctions up to ~ 1 V. The junctions are linearly graded. The current-voltage characteristics have been fitted using the Shockley model. Photosensor parameters: zero-bias-resistance x area product, the R0C time constant and the detectivity D* are presented.
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Submitted 9 July, 2007;
originally announced July 2007.
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Characterization of high-temperature PbTe p-n junctions prepared by thermal diffusion and by ion-implantation
Authors:
A. V. Butenko,
R. Kahatabi,
E. Mogilko,
R. Strul,
V. Sandomirsky,
Y. Schlesinger,
Z. Dashevsky,
V. Kasiyan,
S. Genikhov
Abstract:
We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results, as presented here, demonstrate the high quality of these PbTe diodes. Capacitance-voltage and current-voltage characteristics have been measured. T…
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We describe here the characteristics of two types of high-quality PbTe p-n-junctions, prepared in this work: (1) by thermal diffusion of In4Te3 gas (TDJ), and (2) by ion implantation (implanted junction, IJ) of In (In-IJ) and Zn (Zn-IJ). The results, as presented here, demonstrate the high quality of these PbTe diodes. Capacitance-voltage and current-voltage characteristics have been measured. The measurements were carried out over a temperature range from ~ 10 K to ~ 180 K. The latter was the highest temperature, where the diode still demonstrated rectifying properties. This maximum operating temperature is higher than any of the earlier reported results.
The saturation current density, J0, in both diode types, was ~ 10^-5 A/cm2 at 80 K, while at 180 K J0 ~ 10^-1 A/cm2 in TDJ and ~ 1 A/cm2 in both ion-implanted junctions. At 80 K the reverse current started to increase markedly at a bias of ~ 400 mV for TDJ, and at ~550 mV for IJ. The ideality factor n was about 1.5-2 for both diode types at 80 K. The analysis of the C-V plots shows that the junctions in both diode types are linearly graded. The analysis of the C-V plots allows also determining the height of the junction barrier, the concentrations and the concentration gradient of the impurities, and the temperature dependence of the static dielectric constant. The zero-bias-resistance x area products (R0Ae) at 80 K are: 850 OHMcm2 for TDJ, 250 OHMcm2 for In-IJ, and ~ 80 OHMcm2 for Zn-IJ, while at 180 K R0Ae ~ 0.38 OHMcm2 for TDJ, and ~ 0.1 OHMcm2 for IJ. The estimated detectivity is: D* ~ 10^10 cmHz^(1/2)/W up to T=140 K, determined mainly by background radiation, while at T=180 K, D* decreases to 108-107 cmHz^(1/2)/W, and is determined by the Johnson noise.
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Submitted 9 July, 2007;
originally announced July 2007.
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Electric Field Effect Analysis of Thin PbTe films on high-epsilon SrTiO3 Substrate
Authors:
A. V. Butenko,
R. Kahatabi,
V. Sandomirsky,
Y. Schlesinger,
A. Yu. Sipatov,
V. V. Volubuev
Abstract:
Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high sensitivity of the EFE method. The SrTiO3 substrate serves as the dielectric layer in the Gate-Dielectric-PbTe structure. Due to the large dielectric constant of SrTiO3, particularly at low temperatures, the electric d…
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Thin PbTe films (thickness 500 - 600 angstrom), deposited on SrTiO3, have been investigated by electric field effect (EFE). The high resistivity of such thin films warrants a high sensitivity of the EFE method. The SrTiO3 substrate serves as the dielectric layer in the Gate-Dielectric-PbTe structure. Due to the large dielectric constant of SrTiO3, particularly at low temperatures, the electric displacement D in the film reaches the high value of about 10^8 V/cm, and the EFE introduced charge into the PbTe film amounts to ~ 8 microC/cm2. The high D permits to measure the EFE resistance and Hall constant over a wide region of D, revealing the characteristic features of their D-dependence. An appropriate theoretical model has been formulated, showing that, for such films, one can measure the dependence of the Fermi level on D. In fact, we demonstrate that shifting the Fermi level across the gap by varying D, the density-of-states of the in-gape states can be mapped out. Our results show, that the PbTe layers studied, possess a mobility gap exceeding the gap of bulk PbTe.
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Submitted 4 October, 2006;
originally announced October 2006.
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The Edge Electric Field of a Pyroelectric and its Applications
Authors:
V. Sandomirsky,
Y. Schlesinger,
R. Levin
Abstract:
Following a change of temperature of a pyroelectric (PE), a depolarizing electric field appears both inside the PE, as well as outside its edges, the edge depolarizing electric field (EDEF). The EDEF extends outwards up to a distance of the order of magnitude of the PE width. The mapping and the strength of the EDEF have been calculated and analyzed for the case of a semi-infinite pyroelectric p…
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Following a change of temperature of a pyroelectric (PE), a depolarizing electric field appears both inside the PE, as well as outside its edges, the edge depolarizing electric field (EDEF). The EDEF extends outwards up to a distance of the order of magnitude of the PE width. The mapping and the strength of the EDEF have been calculated and analyzed for the case of a semi-infinite pyroelectric plate. This strong EDEF (104-105 V/cm), when penetrating into the surrounding medium, creates a variety of physical effects: inducing electrical current in a semiconductor and affecting its resistance, accelerating charged and neutral particles in vacuum or in a gas, generating electromagnetic waves, modifying optical characteristics by electrooptical and photoelasic effects, generating piezoelectric deformation and more. We show that these EDEF induced effects could serve as a basis for the development of various applications and devices.
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Submitted 23 July, 2006;
originally announced July 2006.
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The Physics of Electric Field Effect Thermoelectric Devices
Authors:
V. Sandomirsky,
A. V. Butenko,
R. Levin,
Y. Schlesinger
Abstract:
We describe here a novel approach to the subject of thermoelectric devices. The current best thermoelectrics are based on heavily doped semiconductors or semimetal alloys. We show that utilization of electric field effect or ferroelectric field effect, not only provides a new route to this problem, bypassing the drawbacks of conventional doping, but also offers significantly improved thermoelect…
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We describe here a novel approach to the subject of thermoelectric devices. The current best thermoelectrics are based on heavily doped semiconductors or semimetal alloys. We show that utilization of electric field effect or ferroelectric field effect, not only provides a new route to this problem, bypassing the drawbacks of conventional doping, but also offers significantly improved thermoelectric characteristics. We present here model calculation of the thermoelectric figure of merit in thin films of Bi and PbTe, and also discuss several realistic device designs.
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Submitted 3 January, 2001;
originally announced January 2001.
