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Temperature-dependent 2D-3D growth transition of ultra-thin Pt films deposited by PLD
Authors:
Henning Galinski,
Thomas Ryll,
Philipp Reibisch,
Lukas Schlagenhauf,
Iwan Schenker,
Ludwig J. Gauckler
Abstract:
During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads to a growth instability, which induces an alteration of the thin film morphology. In order to study this mechanism, ultra-thin Pt films were deposited via puls…
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During the growth of metal thin films on dielectric substrates at a given deposition temperature T, the film's morphology is conditioned by the magnitude and asymmetry of up- and downhill diffusion. Any severe change of this mechanism leads to a growth instability, which induces an alteration of the thin film morphology. In order to study this mechanism, ultra-thin Pt films were deposited via pulsed laser deposition (PLD) onto yttria-stabilized-zirconia single crystals at different deposition temperatures. The morphological evolution of Pt thin films has been investigated by means of scanning electron microscopy (SEM), atomic force microscopy (AFM) and standard image analysis techniques. The experimentally obtained morphologies are compared to simulated thin film structures resulting from a two-dimensional kinetic Monte Carlo (KMC) approach. Two main observations have been made: i) Thin Pt films deposited onto zirconia undergo a growth transition from two-dimensional to three-dimensional growth at T > 573 K. The growth transition and related morphological changes are a function of the deposition temperature. ii) A critical cluster size of i\ast = 4 in combination with an asymmetric Ehrlich-Schwoebel (ES) barrier favoring the uphill diffusion of atoms allows for a computational reproduction of the experimentally obtained film morphologies.
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Submitted 18 June, 2012;
originally announced June 2012.
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Hillock formation of Pt thin films on Yttria stabilized Zirconia single crystals
Authors:
Henning Galinski,
Thomas Ryll,
Lukas Schlagenhauf,
Patrick Stender,
Guido Schmitz,
Ludwig J. Gauckler
Abstract:
The stability of a metal thin films on a dielectric substrate is conditioned by the magnitude of the interactive forces at the interface. In the case of a non-reactive interface and weak adhesion, the minimization of free surface energy gives rise to an instability of the thin film. In order to study these effects, Pt thin films with a thickness of 50 nm were deposited via ion-beam sputtering on y…
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The stability of a metal thin films on a dielectric substrate is conditioned by the magnitude of the interactive forces at the interface. In the case of a non-reactive interface and weak adhesion, the minimization of free surface energy gives rise to an instability of the thin film. In order to study these effects, Pt thin films with a thickness of 50 nm were deposited via ion-beam sputtering on yttria stabilized zirconia single crystals. All Pt films were subjected to heat treatments up to 973 K for 2 h. The morphological evolution of Pt thin films has been investigated by means of scanning electron microscopy (SEM), atomic force microscopy (AFM) and standard image analysis techniques. Three main observations have been made: i) the deposition method has a direct impact on the morphological evolution of the film during annealing. Instead of hole formation, that is typically observed as response to a thermal treatment, anisotropic pyramidal shaped hillocks are formed on top of the film. ii) It is shown by comparing the hillocks' aspect ratio with finite element method (FEM) simulations that the hillock formation can be assigned to a stress relaxation process inside the thin film. iii) By measuring the equilibrium shapes and the shape fluctuations of the formed Pt hillocks the anisotropy of the step free energy and its stiffness have been derived in addition to the anisotropic kink energy of the hillock's edges.
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Submitted 4 October, 2011;
originally announced October 2011.
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Dealloying of Platinum-Aluminum Thin Films Part II. Electrode Performance
Authors:
Thomas Ryll,
Henning Galinski,
Lukas Schlagenhauf,
Felix Rechberger,
Ying Sun,
Ludwig J. Gauckler,
Flavio C. F. Mornaghini,
Yasmina Ries,
Ralph Spolenak,
Max Doebeli
Abstract:
Highly porous Pt/Al thin film electrodes on yttria stabilized zirconia electrolytes were prepared by dealloying of co-sputtered Pt/Al films. The oxygen reduction capability of the resulting electrodes was analyzed in a solid oxide fuel cell setup at elevated temperatures. During initial heating to 523 K exceptionally high performances compared to conventional Pt thin film electrodes were measured.…
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Highly porous Pt/Al thin film electrodes on yttria stabilized zirconia electrolytes were prepared by dealloying of co-sputtered Pt/Al films. The oxygen reduction capability of the resulting electrodes was analyzed in a solid oxide fuel cell setup at elevated temperatures. During initial heating to 523 K exceptionally high performances compared to conventional Pt thin film electrodes were measured. This results from the high internal surface area and large three phase boundary length obtained by the dealloying process. Exposure to elevated temperatures of 673 K or 873 K gave rise to degradation of the electrode performance, which was primarily attributed to the oxidation of remaining Al in the thin films.
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Submitted 30 October, 2011; v1 submitted 25 August, 2011;
originally announced August 2011.
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Dealloying of Platinum-Aluminum Thin Films Part I. Dynamics of Pattern Formation
Authors:
Henning Galinski,
Thomas Ryll,
Lukas Schlagenhauf,
Felix Rechberger,
Sun Ying,
Flavio C. F. Mornaghini,
Yasmina Ries,
Max Döbeli,
Ralph Spolenak,
Ludwig J. Gauckler
Abstract:
Applying focused ion beam (FIB) nanotomography and Rutherford backscattering spectroscopy (RBS) to dealloyed platinum-aluminum thin films an in-depth analysis of the dominating physical mechanisms of porosity formation during the dealloying process is performed. The dynamical porosity formation due to the dissolution of the less noble aluminum in the alloy is treated as result of a reaction-diffus…
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Applying focused ion beam (FIB) nanotomography and Rutherford backscattering spectroscopy (RBS) to dealloyed platinum-aluminum thin films an in-depth analysis of the dominating physical mechanisms of porosity formation during the dealloying process is performed. The dynamical porosity formation due to the dissolution of the less noble aluminum in the alloy is treated as result of a reaction-diffusion system. The RBS analysis yields that the porosity formation is mainly caused by a linearly propagating diffusion front, i.e. the liquid/solid interface, with a uniform speed of 42(3) nm/s when using a 4M aqueous NaOH solution at room temperature. The experimentally observed front evolution is captured by the normal diffusive Fisher-Kolmogorov-Petrovskii-Piskounov (FKPP) equation and can be interpreted as a branching random walk phenomenon. The etching front produces a gradual porosity with an enhanced porosity in the surface-near regions of the thin film due to prolonged exposure of the alloy to the alkaline solution.
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Submitted 26 April, 2011;
originally announced April 2011.
