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Highly responsive Y-Ba-Cu-O thin film THz detectors with picosecond time resolution
Authors:
P. Thoma,
J. Raasch,
A. Scheuring,
M. Hofherr,
K. Ilin,
S. Wünsch,
A. Semenov,
H. -W. Hübers,
V. Judin,
A. -S. Müller,
N. Smale,
J. Hänisch,
B. Holzapfel,
M. Siegel
Abstract:
High-temperature superconducting YBa2Cu3O7-d (YBCO) thin-film detectors with improved responsivities were developed for fast time-domain measurements in the THz frequency range. YBCO thin films of 30 nm thickness were patterned to micro- and nanobridges and embedded into planar log-spiral THz antennas. The YBCO thin-film detectors were characterized with continuous wave radiation at 0.65 THz. Resp…
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High-temperature superconducting YBa2Cu3O7-d (YBCO) thin-film detectors with improved responsivities were developed for fast time-domain measurements in the THz frequency range. YBCO thin films of 30 nm thickness were patterned to micro- and nanobridges and embedded into planar log-spiral THz antennas. The YBCO thin-film detectors were characterized with continuous wave radiation at 0.65 THz. Responsivity values as high as 710 V/W were found for the YBCO nanobridges. Pulsed measurements in the THz frequency range were performed at the electron storage ring ANKA from the Karlsruhe Institute of Technology (KIT). Due to the high responsivities of the nanobridges no biasing was required for the detection of the coherent synchrotron radiation pulses achieving very good agreement between the measured pulse shapes and simulations.
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Submitted 18 October, 2012;
originally announced October 2012.
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Infrared photo-response of Fe-shunted Ba-122 thin film microstructures
Authors:
L. Rehm,
D. Henrich,
M. Hofherr,
S. Wuensch,
P. Thoma,
A. Scheuring,
K. Ilin,
M. Siegel,
S. Haindl,
K. Iida,
F Kurth,
B. Holzapfel,
L. Schultz
Abstract:
We present a study of the response to pulsed infrared radiation of Fe-layer shunted pnictide thin film microstructures. The thin film multilayer consisting of 20 nm thick Fe-buffer, 50 nm thick Ba(Fe,Co)2As2 film and gold protection layer were deposited on heated MgO and MgAl2O4 substrates by pulsed-laser deposition. The multilayers were patterned into 5 to 8 um wide and 5 um long microbridges by…
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We present a study of the response to pulsed infrared radiation of Fe-layer shunted pnictide thin film microstructures. The thin film multilayer consisting of 20 nm thick Fe-buffer, 50 nm thick Ba(Fe,Co)2As2 film and gold protection layer were deposited on heated MgO and MgAl2O4 substrates by pulsed-laser deposition. The multilayers were patterned into 5 to 8 um wide and 5 um long microbridges by electron-beam lithography and ion-milling technique. The microbridges show Tc up to 20 K and a critical current density up to 2.56 MA/cm2 at T = 10 K. The photo-response of Fe-shunted Ba(Fe,Co)2As2 thin film microbridges to infrared radiation was studied in a wide range of incident optical power, operation temperature and bias current. We have found that the electron energy relaxation in studied multilayers is dependent on substrate material and is 1.75 times faster in case of MgAl2O4 characterized by lattice matching to pnictide film in comparison to MgO substrate.
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Submitted 12 October, 2012;
originally announced October 2012.
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Non-thermal response of YBCO thin films to picosecond THz pulses
Authors:
P. Probst,
A. Semenov,
M. Ries,
A. Hoehl,
P. Rieger,
A. Scheuring,
V. Judin,
S. Wünsch,
K. Il'in,
N. Smale,
Y. -L. Mathis,
R. Müller,
G. Ulm,
G. Wüstefeld,
H. -W. Hübers,
J. Hänisch,
B. Holzapfel,
M. Siegel,
A. -S. Müller
Abstract:
The photoresponse of YBa2Cu3O7-d thin film microbridges with thicknesses between 15 and 50 nm was studied in the optical and terahertz frequency range. The voltage transients in response to short radiation pulses were recorded in real time with a resolution of a few tens of picoseconds. The bridges were excited by either femtosecond pulses at a wavelength of 0.8 μm or broadband (0.1 - 1.5 THz) pic…
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The photoresponse of YBa2Cu3O7-d thin film microbridges with thicknesses between 15 and 50 nm was studied in the optical and terahertz frequency range. The voltage transients in response to short radiation pulses were recorded in real time with a resolution of a few tens of picoseconds. The bridges were excited by either femtosecond pulses at a wavelength of 0.8 μm or broadband (0.1 - 1.5 THz) picosecond pulses of coherent synchrotron radiation. The transients in response to optical radiation are qualitatively well explained in the framework of the two-temperature model with a fast component in the picosecond range and a bolometric nanosecond component whose decay time depends on the film thickness. The transients in the THz regime showed no bolometric component and had amplitudes up to three orders of magnitude larger than the two-temperature model predicts. Additionally THz-field dependent transients in the absence of DC bias were observed. We attribute the response in the THz regime to a rearrangement of vortices caused by high-frequency currents.
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Submitted 12 April, 2012;
originally announced April 2012.