Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Authors:
Slawomir Prucnal,
Yonder Berencén,
Mao Wang,
Jörg Grenzer,
Matthias Voelskow,
Rene Hübner,
Yuji Yamamoto,
Alexander Scheit,
Florian Bärwolf,
Vitaly Zviagin,
Rüdiger Schmidt-Grund,
Marius Grundmann,
Jerzy Żuk,
Marcin Turek,
Andrzej Droździel,
Krzysztof Pyszniak,
Robert Kudrawiec,
Maciej P. Polak,
Lars Rebohle,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of…
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Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
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Submitted 7 January, 2019;
originally announced January 2019.
