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Towards optimized surface $δ$-profiles of nitrogen-vacancy centers activated by helium irradiation in diamond
Authors:
F. Favaro de Oliveira,
S. A. Momenzadeh,
D. Antonov,
J. Scharpf,
C. Osterkamp,
B. Naydenov,
F. Jelezko,
A. Denisenko,
J. Wrachtrup
Abstract:
The negatively-charged nitrogen-vacancy (NV) center in diamond has been shown recently as an excellent sensor for external spins. Nevertheless, their optimum engineering in the near-surface region still requires quantitative knowledge in regard to their activation by vacancy capture during thermal annealing. To this aim, we report on the depth profiles of near-surface helium-induced NV centers (an…
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The negatively-charged nitrogen-vacancy (NV) center in diamond has been shown recently as an excellent sensor for external spins. Nevertheless, their optimum engineering in the near-surface region still requires quantitative knowledge in regard to their activation by vacancy capture during thermal annealing. To this aim, we report on the depth profiles of near-surface helium-induced NV centers (and related helium defects) by step-etching with nanometer resolution. This provides insights into the efficiency of vacancy diffusion and recombination paths concurrent to the formation of NV centers. It was found that the range of efficient formation of NV centers is limited only to approximately $10$ to $15\,$nm (radius) around the initial ion track of irradiating helium atoms. Using this information we demonstrate the fabrication of nanometric-thin ($δ$) profiles of NV centers for sensing external spins at the diamond surface based on a three-step approach, which comprises (i) nitrogen-doped epitaxial CVD diamond overgrowth, (ii) activation of NV centers by low-energy helium irradiation and thermal annealing, and (iii) controlled layer thinning by low-damage plasma etching. Spin coherence times (Hahn echo) ranging up to $50\,$ $μ$s are demonstrated at depths of less than $5\,$nm in material with $1.1\,\%$ of $^{13}$C (depth estimated by spin relaxation (T$_1$) measurements). At the end, the limits of the helium irradiation technique at high ion fluences are also experimentally investigated.
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Submitted 29 February, 2016;
originally announced February 2016.
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Stabilizing shallow color centers in diamond created by nitrogen delta-doping using SF$_6$ plasma treatment
Authors:
Christian Osterkamp,
Johannes Lang,
Jochen Scharpf,
Christoph Müller Liam Paul McGuinness,
Thomas Diemant,
R. J. Behm,
Boris Naydenov,
Fedor Jelezko
Abstract:
Here we report the fabrication of stable, shallow (< 5 nm) nitrogen-vacancy (NV) centers in diamond by nitrogen delta doping at the last stage of the chemical vapor deposition (CVD) growth process. The NVs are stabilized after treating the diamond in $SF_6$ plasma, otherwise the color centers are not observed, suggesting a strong influence from the surface. X-Ray photoelectron spectroscopy measure…
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Here we report the fabrication of stable, shallow (< 5 nm) nitrogen-vacancy (NV) centers in diamond by nitrogen delta doping at the last stage of the chemical vapor deposition (CVD) growth process. The NVs are stabilized after treating the diamond in $SF_6$ plasma, otherwise the color centers are not observed, suggesting a strong influence from the surface. X-Ray photoelectron spectroscopy measurements show the presence of only fluorine atoms on the surface, in contrast to previous studies, and suggests very good surface coverage. We managed to detect hydrogen nuclear magnetic resonance signal from protons in the immersion oil, revealing a depth of the NVs of about 5 nm
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Submitted 23 March, 2015;
originally announced March 2015.
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Augmenting the spin properties of shallow implanted NV-centers by CVD-overgrowth
Authors:
Tobias Staudacher,
Florestan Ziem,
Lutz Häussler,
Rainer Stöhr,
Steffen Steinert,
Friedemann Reinhard,
Jochen Scharpf,
Andrej Denisenko,
Jörg Wrachtrup
Abstract:
The controlled scaling of diamond defect center based quantum registers relies on the ability to position NVs with high spatial resolution. Using ion implantation, shallow (< 10 nm) NVs can be placed with accuracy below 20nm, but generally show reduced spin properties compared to bulk NVs. We demonstrate the augmentation of spin properties for shallow implanted NV centers using an overgrowth techn…
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The controlled scaling of diamond defect center based quantum registers relies on the ability to position NVs with high spatial resolution. Using ion implantation, shallow (< 10 nm) NVs can be placed with accuracy below 20nm, but generally show reduced spin properties compared to bulk NVs. We demonstrate the augmentation of spin properties for shallow implanted NV centers using an overgrowth technique. An increase of the coherence times up to an order of magnitude (T_2 = 250 μs) was achieved. Dynamic decoupling of defects spins achieves ms decoherence times. The study marks a further step towards achieving strong coupling among defects positioned with nm precision.
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Submitted 21 August, 2012;
originally announced August 2012.
