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Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots
Authors:
Jeffrey Schuster,
Johannes Aberl,
Lada Vukušić,
Lukas Spindlberger,
Heiko Groiss,
Thomas Fromherz,
Moritz Brehm,
Friedrich Schäffler
Abstract:
The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs.…
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The Si/SiGe heterosystem would be ideally suited for the realization of complementary metal-oxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains the upper QD as well as the Si cap above it. Electrons are confined in the strain pockets in the Si cap, which leads to an enhanced wave function overlap with the heavy holes near the upper QD's apex. With a thickness of the Si spacer between the stacked QDs below 5 nm, we separated the functions of the two QDs: The role of the lower one is that of a pure stressor, whereas only the upper QD facilitates radiative recombination of QD-bound excitons. We report on the design and strain engineering of the QD pairs via strain-dependent Schrödinger-Poisson simulations, their implementation by molecular beam epitaxy, and a comprehensive study of their structural and optical properties in comparison with those of single-layer SiGe QD arrays. We find that the double QD arrangement shifts the thermal quenching of the photoluminescence signal at higher temperatures. Moreover, detrimental light emission from the QD-related wetting layers is suppressed in the double-QD configuration.
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Submitted 27 October, 2021;
originally announced October 2021.
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Single-shot readout of hole spins in Ge
Authors:
Lada Vukušić,
Josip Kukučka,
Hannes Watzinger,
Joshua M. Milem,
Friedrich Schäffler,
Georgios Katsaros
Abstract:
The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 $μ$s at 500…
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The strong atomistic spin orbit coupling of holes makes single-shot spin readout measurements difficult because it reduces the spin lifetimes. By integrating the charge sensor into a high bandwidth radio-frequency reflectometry setup we were able to demonstrate single-shot readout of a germanium quantum dot hole spin and measure the spin lifetime. Hole spin relaxation times of about 90 $μ$s at 500\,mT are reported. By analysing separately the spin-to-charge conversion and charge readout fidelities insight into the processes limiting the visibilities of hole spins has been obtained. The analyses suggest that very high hole visibilities are feasible at realistic experimental conditions underlying the potential of hole spins for the realization of viable qubit devices.
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Submitted 24 July, 2018; v1 submitted 5 March, 2018;
originally announced March 2018.
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Ge hole spin qubit
Authors:
Hannes Watzinger,
Josip Kukučka,
Lada Vukušić,
Fei Gao,
Ting Wang,
Friedrich Schäffler,
Jian-Jun Zhang,
Georgios Katsaros
Abstract:
Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal Pauli spin blockade. We demonstrate electric-dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum…
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Holes confined in quantum dots have gained considerable interest in the past few years due to their potential as spin qubits. Here we demonstrate double quantum dot devices in Ge hut wires. Low temperature transport measurements reveal Pauli spin blockade. We demonstrate electric-dipole spin resonance by applying a radio frequency electric field to one of the electrodes defining the double quantum dot. Next, we induce coherent hole spin oscillations by varying the duration of the microwave burst. Rabi oscillations with frequencies reaching 140MHz are observed. Finally, Ramsey experiments reveal dephasing times of 130ns. The reported results emphasize the potential of Ge as a platform for fast and scalable hole spin qubit devices.
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Submitted 11 April, 2018; v1 submitted 1 February, 2018;
originally announced February 2018.
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Free-running Sn precipitates: an efficient phase separation mechanism for metastable GeSn epilayers
Authors:
Heiko Groiss,
Martin Glaser,
Magdalena Schatzl,
Moritz Brehm,
Dagmar Gerthsen,
Dietmar Roth,
Peter Bauer,
Friedrich Schäffler
Abstract:
We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either case we observe that decomposition of metastable epilayers with Sn concentrations around 10% sets in above 230°C, the eutectic temperature of the Ge/Sn system. T…
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We report on the temperature stability of pseudomorphic GeSn films grown by molecular beam epitaxy on Ge(001) substrates. Both the growth temperature-dependence and the influence of post-growth annealing steps were investigated. In either case we observe that decomposition of metastable epilayers with Sn concentrations around 10% sets in above 230°C, the eutectic temperature of the Ge/Sn system. Time-resolved annealing experiments in a scanning electron microscope reveal the crucial role of liquid Sn droplets in this phase separation process. Driven by a gradient of the chemical potential, the Sn droplets move on the surface along preferential crystallographic directions, thereby taking up Sn and Ge from the strained GeSn layer at their leading edge. While Sn-uptake increases the volume of the melt, dissolved Ge becomes re-deposited by a liquid-phase epitaxial process at the trailing edge of the droplet. Secondary droplets are launched from the rims of the single-crystalline Ge trails into intact regions of the GeSn film, leading to an avalanche-like transformation front between the GeSn film and re-deposited Ge. This process makes phase separation of metastable GeSn layers particularly efficient at rather low temperatures.
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Submitted 15 May, 2017;
originally announced May 2017.
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Realization of high-Q/V bichromatic photonic crystal cavities defined by an effective Aubry-André-Harper potential
Authors:
A. Simbula,
M. Schatzl,
L. Zagaglia,
F. Alpeggiani,
L. C. Andreani,
F. Schäffler,
T. Fromherz,
M. Galli,
D. Gerace
Abstract:
We report on the design, fabrication and optical characterization of bichromatic photonic crystal cavities in thin silicon membranes, with resonances around 1550 nm wavelength. The cavity designs are based on a recently proposed photonic crystal implementation of the Aubry-André-Harper bichromatic potential, which relies on the superposition of two one-dimensional lattices with non-integer ratio b…
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We report on the design, fabrication and optical characterization of bichromatic photonic crystal cavities in thin silicon membranes, with resonances around 1550 nm wavelength. The cavity designs are based on a recently proposed photonic crystal implementation of the Aubry-André-Harper bichromatic potential, which relies on the superposition of two one-dimensional lattices with non-integer ratio between the periodicity constants. In photonic crystal nanocavities, this confinement mechanism is such that optimized figures of merit can be straightforwardly achieved, in particular an ultra-high-Q factor and diffraction-limited mode volume. Several silicon membrane photonic crystal nanocavities with Q-factors in the 1 million range have been realized, as evidenced by resonant scattering. The generality of these designs and their easy implementation and scalability make these results particularly interesting for realizing highly performing photonic nanocavities on different materials platforms and operational wavelengths.
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Submitted 2 December, 2016;
originally announced December 2016.
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Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si
Authors:
M. Grydlik,
F. Hackl,
H. Groiss,
M. Glaser,
A. Halilovic,
T. Fromherz,
W. Jantsch,
F. Schäffler,
M. Brehm
Abstract:
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a…
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Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional SiGe nanostructures, almost no thermal quenching of the photoluminescence (PL) up to room-temperature (RT). Microdisk resonators with embedded GIB-QDs exhibit threshold-behaviour and super-linear increase of the integrated PL-intensity (IPL) with increasing excitation power Pexc which indicates light amplification by stimulated emission in a fully SIT-compatible group-IV nano-system.
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Submitted 13 May, 2015;
originally announced May 2015.
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Pure spin currents induced by spin-dependent scattering processes in SiGe quantum well structures
Authors:
S. D. Ganichev,
S. N. Danilov,
V. V. Bel'kov,
S. Giglberger,
S. A. Tarasenko,
E. L. Ivchenko,
D. Weiss,
W. Jantsch,
F. Schaeffler,
D. Gruber,
W. Prettl
Abstract:
We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the…
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We show that spin-dependent electron-phonon interaction in the energy relaxation of a two-dimensional electron gas results in equal and oppositely directed currents in the spin-up and spin-down subbands yielding a pure spin current. In our experiments on SiGe heterostructures the pure spin current is converted into an electric current applying a magnetic field that lifts the cancellation of the two partial charge flows. A microscopic theory of this effect, taking account of the asymmetry of the relaxation process, is developed being in a good agreement with the experimental data.
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Submitted 26 October, 2006;
originally announced October 2006.
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g-Factor Tuning and Manipulation of Spins by an Electric Current
Authors:
Zbyslaw Wilamowski,
Hans Malissa,
Friedrich Schäffler,
Wolfgang Jantsch
Abstract:
We investigate the Zeeman splitting of two-dimensional electrons in an asymmetric silicon quantum well, by electron-spin-resonance (ESR) experiments. Applying a small dc current we observe a shift in the resonance field due to the additional current-induced Bychkov-Rashba (BR) type of spin-orbit (SO) field. This finding demonstrates SO coupling in the most straightforward way: in the presence of…
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We investigate the Zeeman splitting of two-dimensional electrons in an asymmetric silicon quantum well, by electron-spin-resonance (ESR) experiments. Applying a small dc current we observe a shift in the resonance field due to the additional current-induced Bychkov-Rashba (BR) type of spin-orbit (SO) field. This finding demonstrates SO coupling in the most straightforward way: in the presence of a transverse electric field the drift velocity of the carriers imposes an effective SO magnetic field. This effect allows selective tuning of the g-factor by an applied dc current. In addition, we show that an ac current may be used to induce spin resonance very efficiently.
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Submitted 2 October, 2006;
originally announced October 2006.
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Linear temperature dependence of conductivity in Si two-dimensional electrons near the apparent metal-to-insulator transition
Authors:
K. Lai,
W. Pan,
D. C. Tsui,
S. Lyon,
M. Muhlberger,
F. Schaffler
Abstract:
In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the Fermi temperature. When $σ_0$, the extrapolated T=0 conductivity from the linear T-dependence, is plotted as a function of density, two regimes with differen…
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In a high mobility two-dimensional electron system in Si, near the critical density, $n_c=0.32\times10^{11}$cm$^{-2}$, of the apparent metal-to-insulator transition, the conductivity displays a linear temperature ($T$) dependence around the Fermi temperature. When $σ_0$, the extrapolated T=0 conductivity from the linear T-dependence, is plotted as a function of density, two regimes with different $σ_0(n)$ relations are seen, suggestive of two different phases. Interestingly, a sharp transition between these two regimes coincides with $n_c$, and $σ_0$ of the transition is $\sim$ $e^2/h$, the quantum conductance, per square. Toward T=0, the data deviate from linear $σ(T)$ relation and we discuss the possible percolation type of transition in our Si sample.
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Submitted 12 September, 2006;
originally announced September 2006.
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Self - Organized Si Dots On Ge Substrates
Authors:
D. Pachinger,
H. Lichtenberger und F. Schaeffler
Abstract:
The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloyin…
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The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for the hole studied temperature range, although strong alloying with the substrate occurred for the highest temperatures. Carbon pre-deposition offers suitable nucleation centers for the Si island and reduction of alloying. pre-structured Ge substrates were prepared to enhance islanding and to achieve ordering.
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Submitted 30 August, 2006;
originally announced August 2006.
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Centrosymmetric PbTe/CdTe quantum dots coherently embedded by epitaxial precipitation
Authors:
W. Heiss,
H. Groiss,
E. Kaufmann,
G. Hesser,
M. Boberl,
G. Springholz,
F. Schaffler,
K. Koike,
H. Harada,
M. Yano
Abstract:
A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach, the formation of the quantum dots is induced by a transformation of an epitaxial 2D quantum well into an array of isolated precipitates with dimensions of about 25 nm. The formation process is driven by the immiscibility of the constituent…
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A concept for the fabrication of highly symmetric quantum dots that are coherently embedded in a single crystalline matrix is demonstrated. In this approach, the formation of the quantum dots is induced by a transformation of an epitaxial 2D quantum well into an array of isolated precipitates with dimensions of about 25 nm. The formation process is driven by the immiscibility of the constituent materials resulting from their different lattice structures. The investigated PbTe/CdTe heterosystem combines two different cubic lattices with almost identical lattice constants. Therefore, the precipitated quantum dots are almost strain free and near thermodynamic equilibrium they exhibit the shape of small-rhombo-cubo-octahedrons. The PbTe/CdTe quantum dots, grown on GaAs substrates, display intense room temperature luminescence at wavelength around 3.2 micrometer, which makes them auspicious for applications in mid-infrared photonic devices.
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Submitted 22 February, 2006;
originally announced February 2006.
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Initial stage of the 2D-3D transition of a strained SiGe layer on a pit-patterned Si(001) template
Authors:
Gang Chen,
Herbert Lichtenberger,
Guenther Bauer,
Wolfgang Jantsch,
Friedrich Schaffler
Abstract:
We investigate the initial stage of the 2D-3D transition of strained Ge layers deposited on pit-patterned Si(001) templates. Within the pits, which assume the shape of inverted, truncated pyramids after optimized growth of a Si buffer layer, the Ge wetting layer develops a complex morphology consisting exclusively of {105} and (001) facets. These results are attributed to a strain-driven step-me…
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We investigate the initial stage of the 2D-3D transition of strained Ge layers deposited on pit-patterned Si(001) templates. Within the pits, which assume the shape of inverted, truncated pyramids after optimized growth of a Si buffer layer, the Ge wetting layer develops a complex morphology consisting exclusively of {105} and (001) facets. These results are attributed to a strain-driven step-meandering instability on the facetted side-walls of the pits, and a step-bunching instability at the sharp concave intersections of these facets. Although both instabilities are strain-driven, their coexistence becomes mainly possible by the geometrical restrictions in the pits. It is shown that the morphological transformation of the pit surface into low-energy facets has strong influence on the preferential nucleation of Ge islands at the flat bottom of the pits.
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Submitted 7 February, 2006;
originally announced February 2006.
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Valley splitting of Si/SiGe heterostructures in tilted magnetic fields
Authors:
K. Lai,
T. M. Lu,
W. Pan,
D. C. Tsui,
S. Lyon,
J. Liu,
Y. H. Xie,
M. Muhlberger,
F. Schaffler
Abstract:
We have investigated the valley splitting of two-dimensional electrons in high quality Si/Si$_{1-x}$Ge$_x$ heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor $ν=3$ ($Δ_3$) is significantly different before and after the coincidence angle, at which energy levels cross at the Fermi level. On both sides of the coincidence, a linea…
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We have investigated the valley splitting of two-dimensional electrons in high quality Si/Si$_{1-x}$Ge$_x$ heterostructures under tilted magnetic fields. For all the samples in our study, the valley splitting at filling factor $ν=3$ ($Δ_3$) is significantly different before and after the coincidence angle, at which energy levels cross at the Fermi level. On both sides of the coincidence, a linear density dependence of $Δ_3$ on the electron density was observed, while the slope of these two configurations differs by more than a factor of two. We argue that screening of the Coulomb interaction from the low-lying filled levels, which also explains the observed spin-dependent resistivity, is responsible for the large difference of $Δ_3$ before and after the coincidence.
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Submitted 27 January, 2006;
originally announced January 2006.
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Observation of Inter-Valley Gap Anomaly of Two Dimensional electrons in Silicon
Authors:
K. Lai,
W. Pan,
D. C. Tsui,
S. Lyon,
M. Mühlberger,
F. Schäffler
Abstract:
We report here a systematic study of the energy gaps at the odd-integer quantum Hall states $ν=3$ and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley splitting is independent of the in-plane B fields. However, the $ν=3$ valley gap differs by about a factor of 3 ($Δ_v\sim$ 0.4K vs. 1.2K) at either side of the coinc…
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We report here a systematic study of the energy gaps at the odd-integer quantum Hall states $ν=3$ and 5 under tilted magnetic (B) fields in a high quality Si two-dimensional electron system. Out of the coincidence region, the valley splitting is independent of the in-plane B fields. However, the $ν=3$ valley gap differs by about a factor of 3 ($Δ_v\sim$ 0.4K vs. 1.2K) at either side of the coincidence. More surprisingly, instead of reducing to zero, the energy gaps at $ν=3$ and 5 rise rapidly when approaching the coincidence angles. We believe that such anomaly is related to strong coupling of the nearly degenerate Landau levels.
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Submitted 21 October, 2005;
originally announced October 2005.
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Single-Electron Transistor in Strained Si/SiGe Heterostructures
Authors:
Thomas Berer,
Dietmar Pachinger,
Georg Pillwein,
Michael Muehlberger,
Herbert Lichtenberger,
Gerhard Brunthaler,
F. Schaeffler
Abstract:
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative voltages to these gates the underlying electron gas is depleted and a lateral quantum dot is formed, the size of which can be adjusted by the gate voltage. We ob…
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A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative voltages to these gates the underlying electron gas is depleted and a lateral quantum dot is formed, the size of which can be adjusted by the gate voltage. We observe single-electron operation with Coulomb blockade behavior below 1K. Gate leakage currents are well controlled, indicating that the recently encountered problems with Schottky gates for this type of application are not an inherent limitation of modulation-doped Si/SiGe heterostructures, as had been speculated.
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Submitted 10 August, 2005;
originally announced August 2005.
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Modulation of the high mobility two-dimensional electrons in Si/SiGe using atomic-layer-deposited gate dielectric
Authors:
K. Lai,
P. D. Ye,
W. Pan,
D. C. Tsui,
S. A. Lyon,
M. Muhlberger,
F. Schaffler
Abstract:
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5$\times10^{11}$cm$^{-2}$ to 4.5$\times10^{11}$cm$^{-2}$, vir…
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Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5$\times10^{11}$cm$^{-2}$ to 4.5$\times10^{11}$cm$^{-2}$, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be better than that using Schottky barrier or the SiO$_2$ dielectric formed by plasma-enhanced chemical-vapor-deposition(PECVD).
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Submitted 19 April, 2005;
originally announced April 2005.
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Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high mobility strained Si quantum well
Authors:
K. Lai,
W. Pan,
D. C. Tsui,
S. A. Lyon,
M. Muhlberger,
F. Schaffler
Abstract:
The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility μ=1.9 x 10^5 cm^2/Vs at density n=1.45 x 10^{11} cm^{-2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is ~ 0.32 x 10^{11} cm^{-2}, so far the lowest observed in…
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The apparent metal-insulator transition is observed in a high quality two-dimensional electron system (2DES) in the strained Si quantum well of a Si/Si_{1-x}Ge_x heterostructure with mobility μ=1.9 x 10^5 cm^2/Vs at density n=1.45 x 10^{11} cm^{-2}. The critical density, at which the thermal coefficient of low T resistivity changes sign, is ~ 0.32 x 10^{11} cm^{-2}, so far the lowest observed in the Si 2D systems. In-plane magnetoresistance study was carried out in the higher density range where the 2DES shows the metallic-like behavior. It is observed that the in-plane magnetoresistance first increases as ~ B_{ip}^2 and then saturates to a finite value ρ(B_c) for B_{ip} > B_c. The full spin-polarization field B_c decreases monotonically with n but appears to saturate to a finite value as n approaches zero. Furthermore, ρ(B_c)/ρ(0) ~ 1.8 for all the densities ranging from 0.35 x 10^{11} to 1.45 x 10^{11} cm^{-2} and, when plotted versus B_{ip}/B_c, collapses onto a single curve.
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Submitted 24 January, 2005; v1 submitted 21 January, 2005;
originally announced January 2005.
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The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
Authors:
K. Lai,
W. Pan,
D. C. Tsui,
S. Lyon,
M. Muhlberger,
F. Schaffler
Abstract:
Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterostructure, at temperatures down to 30mK and in magnetic fields up to 45T. We observe around ν=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at ν=2/3, 3/5, 4/7, and at ν=4/9,…
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Magnetotransport properties are investigated in a high-mobility two-dimensional electron system in the strained Si quantum well of a (100) Si_0.75Ge_0.25/Si/Si_0.75Ge_0.25 heterostructure, at temperatures down to 30mK and in magnetic fields up to 45T. We observe around ν=1/2 the two-flux composite fermion (CF) series of the fractional quantum Hall effect (FQHE) at ν=2/3, 3/5, 4/7, and at ν=4/9, 2/5, 1/3. Among these FQHE states, the ν=1/3, 4/7 and 4/9 states are seen for the first time in the Si/SiGe system. Interestingly, of the CF series, the 3/5 state is weaker than the nearby 4/7 state and the 3/7 state is conspicuously missing, resembling the observation in the integer quantum Hall effect regime that the ν=3 is weaker than the nearby ν=4 state. Our data indicate that the two-fold degeneracy of the CFs is lifted and an estimated valley splitting of ~1K.
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Submitted 19 May, 2004;
originally announced May 2004.
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Spin Manipulation of Free 2-Dimensional Electrons in Si/SiGe Quantum Wells
Authors:
A. M. Tyryshkin,
S. A. Lyon,
W. Jantsch,
F. Schaeffler
Abstract:
An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate spin rotations of an ensemble of free 2-dimensional electrons confined to a silicon quantum well embedded in a silicon-germanium alloy host. The spins are man…
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An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate spin rotations of an ensemble of free 2-dimensional electrons confined to a silicon quantum well embedded in a silicon-germanium alloy host. The spins are manipulated by resonant microwave pulses and an applied magnetic field in a pulsed electron paramagnetic resonance spectrometer. From the pulsed measurements we deduce a spin coherence time in this system of about 3 microsec, allowing at least 100 elementary operations before decoherence destroys the spin state. These measurements represent an important step towards the realization of quantum computation using electron spins in semiconductors, but at the same time establish some constraints on the design of such a system.
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Submitted 11 April, 2003;
originally announced April 2003.
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Positioning of self-assembled Ge islands on stripe-patterned Si (001) substrates
Authors:
Zhenyang Zhong,
A. Halilovic,
M. Muhlberger,
F. Schaffler,
G. Bauer
Abstract:
Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy images (TEM) shows that the Ge islands are preferentially grown at the sidewalls of pure Si stripes along [-110] direction at 650o C or along the trenches, whereas…
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Self-assembled Ge islands were grown on stripe-patterned Si (001) substrates by solid source molecular beam epitaxy. The surface morphology obtained by atomic force microscopy (AFM) and cross-sectional transmission electron microscopy images (TEM) shows that the Ge islands are preferentially grown at the sidewalls of pure Si stripes along [-110] direction at 650o C or along the trenches, whereas most of the Ge islands are formed on the top terrace when the patterned stripes are covered by a strained GeSi buffer layer. Reducing the growth temperature to 600oC results in a nucleation of Ge islands both on the top terrace and at the sidewall of pure Si stripes. A qualitative analysis, based on the growth kinetics, demonstrates that the step structure of the stripes, the external strain field and the local critical wetting layer thickness for the islands formation contribute to the preferential positioning of Ge islands on the stripes.
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Submitted 2 April, 2003; v1 submitted 31 March, 2003;
originally announced March 2003.
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Transient-Enhanced Surface Diffusion on Native-Oxide-Covered Si(001) Nano-Structures during Vacuum Annealing
Authors:
H. Lichtenberger,
M. Muehlberger,
F. Schaffler
Abstract:
We report on the transient-enhanced shape transformation of nano-structured Si(001) surfaces upon in vacuo annealing at relatively low temperatures of 1175K - 1225K for a few minutes. We find dramatic surface mass transport concomitant with the development of low-energy facets on surfaces that are covered by native oxide. The enhanced surface mass transport ceases after the oxide is completely d…
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We report on the transient-enhanced shape transformation of nano-structured Si(001) surfaces upon in vacuo annealing at relatively low temperatures of 1175K - 1225K for a few minutes. We find dramatic surface mass transport concomitant with the development of low-energy facets on surfaces that are covered by native oxide. The enhanced surface mass transport ceases after the oxide is completely desorbed, and it is also not observed on surfaces where the native oxide had been removed by HF before annealing.
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Submitted 7 January, 2003;
originally announced January 2003.
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Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy
Authors:
J. Myslivecek,
C. Schelling,
F. Schaffler,
G. Springholz,
P. Smilauer,
J. Krug,
B. Voigtlander
Abstract:
Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step- flow growth conditions and vanishes both during low-temperature island growth and at high temperatures. An instability with the same characteristics is observed in a…
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Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step- flow growth conditions and vanishes both during low-temperature island growth and at high temperatures. An instability with the same characteristics is observed in a 2D Kinetic Monte Carlo model of growth with incorporated Si(001)- like diffusion anisotropy. This provides strong evidence that the diffusion anisotropy destabilizes growth on Si(001) and similar surfaces towards step bunching. This new instability mechanism is operational without any additional step edge barriers.
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Submitted 13 December, 2002;
originally announced December 2002.
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Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells
Authors:
Z. Wilamowski,
N. Sandersfeld,
W. Jantsch,
D. Toebben,
F. Schaeffler
Abstract:
Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi level D(E_F), and the screening wave vector, q_TF. Both are constant at higher carrier densities n, as for an ideal 2D carrier gas. For n < 3e11 cm-2, they decr…
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Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi level D(E_F), and the screening wave vector, q_TF. Both are constant at higher carrier densities n, as for an ideal 2D carrier gas. For n < 3e11 cm-2, they decrease and extrapolate to zero at n = 7e10 cm-2. Calculating the mobility from q_TF yields good agreement with experimental values justifying the approach. The decrease in D(E_F) is explained by potential fluctuations which lead to tail states that make screening less efficient and - in a positive feedback - cause an increase of the potential fluctuations. Even in our high mobility samples the fluctuations exceed the electron-electron interaction leading to the formation of puddles of mobile carriers with at least 1 micrometer diameter.
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Submitted 5 October, 2000;
originally announced October 2000.
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Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices
Authors:
G. Brunthaler,
T. Dietl,
A. Prinz,
M. Sawicki,
J. Jaroszynski,
P. Glod,
F. Schaffler,
G. Bauer,
D. K. Maude,
J. C. Portal
Abstract:
A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particl…
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A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures.
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Submitted 17 December, 1997;
originally announced December 1997.
