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Self-compensation in highly n-type InN
Authors:
C. Rauch,
F. Tuomisto,
P. D. C. King,
T. D. Veal,
H. Lu,
W. J. Schaff
Abstract:
Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negativel…
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Acceptor-type defects in highly n-type InN are probed using positron annihilation spectroscopy. Results are compared to Hall effect measurements and calculated electron mobilities. Based on this, self-compensation in n-type InN is studied and the microscopic origin of compensating and scattering centers in irradiated and Si-doped InN is discussed. We find significant compensation through negatively charged indium vacancy complexes as well as additional acceptor-type defects with no or small effective open volume, which act as scattering centers in highly n-type InN samples.
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Submitted 15 April, 2012;
originally announced April 2012.
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Defect evolution and interplay in n-type InN
Authors:
Christian Rauch,
Filip Tuomisto,
Arantxa Vilalta-Clemente,
Bertrand Lacroix,
Pierre Ruterana,
Simon Kraeusel,
Ben Hourahine,
William J. Schaff
Abstract:
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, V_In-V_N complexes are the dominant III-sublattice related vacancy defects…
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The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6x10E20cm-3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, V_In-V_N complexes are the dominant III-sublattice related vacancy defects. Enhanced formation of larger V_In-mV_N clusters is observed at the interface, which speaks for high concentrations of additional V_N in the near-interface region and coincides with an increase in the density of screw and edge type dislocations in that area.
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Submitted 22 November, 2011;
originally announced November 2011.
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Effect of Native Defects on Optical Properties of InxGa1-xN Alloys
Authors:
S. X. Li,
E. E. Haller,
K. M. Yu,
W. Walukiewicz,
J. W. Ager III,
J. Wu,
W. Shan,
Hai Lu,
William J. Schaff
Abstract:
The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optic…
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The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model.
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Submitted 4 August, 2005;
originally announced August 2005.
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Topological Phase Diagram of a Two-Subband Electron System
Authors:
X. Y. Lee,
H. W. Jiang,
W. J. Schaff
Abstract:
We present a phase diagram for a two-dimensional electron system with two populated subbands. Using a gated GaAs/AlGaAs single quantum well, we have mapped out the phases of various quantum Hall states in the density-magnetic filed plane. The experimental phase diagram shows a very different topology from the conventional Landau fan diagram. We find regions of negative differential Hall resistan…
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We present a phase diagram for a two-dimensional electron system with two populated subbands. Using a gated GaAs/AlGaAs single quantum well, we have mapped out the phases of various quantum Hall states in the density-magnetic filed plane. The experimental phase diagram shows a very different topology from the conventional Landau fan diagram. We find regions of negative differential Hall resistance which are interpreted as preliminary evidence of the long sought reentrant quantum Hall transitions. We discuss the origins of the anomalous topology and the negative differential Hall resistance in terms of the Landau level and subband mixing.
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Submitted 18 May, 1999;
originally announced May 1999.
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Absence of Floating Delocalized States in a Two-Dimensional Hole Gas
Authors:
S. C. Dultz,
H. W. Jiang,
W. J. Schaff
Abstract:
By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field plane. We found that the energy of the delocalized state from the lowest Landau level flattens out as the magnetic field tends toward zero. This finding is different from that for the two-dimensiona…
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By tracking the delocalized states of the two-dimensional hole gas in a p-type GaAs/AlGaAs heterostructure as a function of magnetic field, we mapped out a phase diagram in the density-magnetic-field plane. We found that the energy of the delocalized state from the lowest Landau level flattens out as the magnetic field tends toward zero. This finding is different from that for the two-dimensional electron system in an n-type GaAs/AlGaAs heterostructure where delocalized states diverge in energy as B goes to zero indicating the presence of only localized states below the Fermi energy. The possible connection of this finding to the recently observed metal-insulator transition at B = 0 in the two-dimensional hole gas systems is discussed.
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Submitted 13 August, 1998;
originally announced August 1998.
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Termination of the spin-resolved integer quantum Hall effect
Authors:
L. W. Wong,
H. W. Jiang,
E. Palm,
W. J. Schaff
Abstract:
We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlGaAs heterostructure. We have found that, for a given N^{th} Landau level, the difference in filling factors of a pair of spin-split resistivity peaks δν_{N}changes rapidly from one to zero near a critical density n_{c}. Scaling analysis shows that δν_{N…
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We report a magnetotransport study of the termination of the spin-resolved integer quantum Hall effect by controlled disorder in a gated GaAs/AlGaAs heterostructure. We have found that, for a given N^{th} Landau level, the difference in filling factors of a pair of spin-split resistivity peaks δν_{N}changes rapidly from one to zero near a critical density n_{c}. Scaling analysis shows that δν_{N} collapses onto a single curve independent of N when plotted against the parameter (n-n_{c})/n_{c} for five Landau levels. The effect of increasing the Zeeman energy is also examined by tilting the direction of magnetic field relative to the plane of the two-dimensional electron gas. Our experiment suggests that the termination of the spin-resolved quantum Hall effect is a phase transition.
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Submitted 4 February, 1997;
originally announced February 1997.
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Universality and Phase Diagram around Half-filled Landau Level
Authors:
L. W. Wong,
H. W. Jiang,
W. J. Schaff
Abstract:
Gated GaAs/AlGaAs heterostructures were used to determine the low-temperature behavior of the two-dimensional electron gas near filling factor nu=1/2 in the disorder-magnetic-field plane. We identify a line on which sigma_{xy} is temperature independent, has value sigma_{xy}=0.5 (e^{2}/h), and a distinct line on which rho_{xy}=2 (h/e^{2}). The phase boundaries between the Hall insulator and the…
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Gated GaAs/AlGaAs heterostructures were used to determine the low-temperature behavior of the two-dimensional electron gas near filling factor nu=1/2 in the disorder-magnetic-field plane. We identify a line on which sigma_{xy} is temperature independent, has value sigma_{xy}=0.5 (e^{2}/h), and a distinct line on which rho_{xy}=2 (h/e^{2}). The phase boundaries between the Hall insulator and the principal quantum Hall liquids at nu=1 and 1/3 show levitation of the delocalized states of the first Landau levels for electrons and composite fermions. Finally, the data suggest that there is no true metallic phase around nu=1/2.
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Submitted 15 January, 1997;
originally announced January 1997.
