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Roadmap to fault tolerant quantum computation using topological qubit arrays
Authors:
David Aasen,
Morteza Aghaee,
Zulfi Alam,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Lukas Avilovas,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Juan M. Bello-Rivas,
Umesh Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Parsa Bonderson,
Jan Borovsky,
Leo Bourdet,
Samuel Boutin,
Tom Brown,
Gary Campbell,
Lucas Casparis,
Srivatsa Chakravarthi,
Rui Chao
, et al. (157 additional authors not shown)
Abstract:
We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap encompasses four generations of devices: a single-qubit device that enables a measurement-based qubit benchmarking protocol; a two-qubit device that uses measurement-based braiding to perform single-qubit Clifford operati…
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We describe a concrete device roadmap towards a fault-tolerant quantum computing architecture based on noise-resilient, topologically protected Majorana-based qubits. Our roadmap encompasses four generations of devices: a single-qubit device that enables a measurement-based qubit benchmarking protocol; a two-qubit device that uses measurement-based braiding to perform single-qubit Clifford operations; an eight-qubit device that can be used to show an improvement of a two-qubit operation when performed on logical qubits rather than directly on physical qubits; and a topological qubit array supporting lattice surgery demonstrations on two logical qubits. Devices that enable this path require a superconductor-semiconductor heterostructure that supports a topological phase, quantum dots and coupling between those quantum dots that can create the appropriate loops for interferometric measurements, and a microwave readout system that can perform fast, low-error single-shot measurements. We describe the key design components of these qubit devices, along with the associated protocols for demonstrations of single-qubit benchmarking, Clifford gate execution, quantum error detection, and quantum error correction, which differ greatly from those in more conventional qubits. Finally, we comment on implications and advantages of this architecture for utility-scale quantum computation.
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Submitted 7 April, 2025; v1 submitted 17 February, 2025;
originally announced February 2025.
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Probing single electrons across 300 mm spin qubit wafers
Authors:
Samuel Neyens,
Otto K. Zietz,
Thomas F. Watson,
Florian Luthi,
Aditi Nethwewala,
Hubert C. George,
Eric Henry,
Mohammad Islam,
Andrew J. Wagner,
Felix Borjans,
Elliot J. Connors,
J. Corrigan,
Matthew J. Curry,
Daniel Keith,
Roza Kotlyar,
Lester F. Lampert,
Mateusz T. Madzik,
Kent Millard,
Fahd A. Mohiyaddin,
Stefano Pellerano,
Ravi Pillarisetty,
Mick Ramsey,
Rostyslav Savytskyy,
Simon Schaal,
Guoji Zheng
, et al. (5 additional authors not shown)
Abstract:
Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev…
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Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.
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Submitted 3 May, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
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Fast high-fidelity single-shot readout of spins in silicon using a single-electron box
Authors:
G. A. Oakes,
V. N. Ciriano-Tejel,
D. Wise,
M. A. Fogarty,
T. Lundberg,
C. Lainé,
S. Schaal,
F. Martins,
D. J. Ibberson,
L. Hutin,
B. Bertrand,
N. Stelmashenko,
J. A. W. Robinson,
L. Ibberson,
A. Hashim,
I. Siddiqi,
A. Lee,
M. Vinet,
C. G. Smith,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we…
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Three key metrics for readout systems in quantum processors are measurement speed, fidelity and footprint. Fast high-fidelity readout enables mid-circuit measurements, a necessary feature for many dynamic algorithms and quantum error correction, while a small footprint facilitates the design of scalable, highly-connected architectures with the associated increase in computing performance. Here, we present two complementary demonstrations of fast high-fidelity single-shot readout of spins in silicon quantum dots using a compact, dispersive charge sensor: a radio-frequency single-electron box. The sensor, despite requiring fewer electrodes than conventional detectors, performs at the state-of-the-art achieving spin read-out fidelity of 99.2% in less than 6 $μ$s. We demonstrate that low-loss high-impedance resonators, highly coupled to the sensing dot, in conjunction with Josephson parametric amplification are instrumental in achieving optimal performance. We quantify the benefit of Pauli spin blockade over spin-dependent tunneling to a reservoir, as the spin-to-charge conversion mechanism in these readout schemes. Our results place dispersive charge sensing at the forefront of readout methodologies for scalable semiconductor spin-based quantum processors.
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Submitted 13 March, 2022;
originally announced March 2022.
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Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Authors:
Jingyu Duan,
Janne S. Lehtinen,
Michael A. Fogarty,
Simon Schaal,
Michelle Lam,
Alberto Ronzani,
Andrey Shchepetov,
Panu Koppinen,
Mika Prunnila,
Fernando Gonzalez-Zalba,
John J. L. Morton
Abstract:
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem…
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We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon.
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Submitted 29 September, 2020;
originally announced September 2020.
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Spin readout of a CMOS quantum dot by gate reflectometry and spin-dependent tunnelling
Authors:
V. N. Ciriano-Tejel,
M. A. Fogarty,
S. Schaal,
L. Hutin,
B. Bertrand,
Lisa Ibberson,
M. F. Gonzalez-Zalba,
J. Li,
Y. -M. Niquet,
M. Vinet,
J. J. L. Morton
Abstract:
Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, w…
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Silicon spin qubits are promising candidates for realising large scale quantum processors, benefitting from a magnetically quiet host material and the prospects of leveraging the mature silicon device fabrication industry. We report the measurement of an electron spin in a singly-occupied gate-defined quantum dot, fabricated using CMOS compatible processes at the 300 mm wafer scale. For readout, we employ spin-dependent tunneling combined with a low-footprint single-lead quantum dot charge sensor, measured using radiofrequency gate reflectometry. We demonstrate spin readout in two devices using this technique, obtaining valley splittings in the range 0.5-0.7 meV using excited state spectroscopy, and measure a maximum electron spin relaxation time ($T_1$) of $9 \pm 3$ s at 1 Tesla. These long lifetimes indicate the silicon nanowire geometry and fabrication processes employed here show a great deal of promise for qubit devices, while the spin-readout method demonstrated here is well-suited to a variety of scalable architectures.
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Submitted 12 June, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
Authors:
S. Schaal,
I. Ahmed,
J. A. Haigh,
L. Hutin,
B. Bertrand,
S. Barraud,
M. Vinet,
C. -M. Lee,
N. Stelmashenko,
J. W. A. Robinson,
J. Y. Qiu,
S. Hacohen-Gourgy,
I. Siddiqi,
M. F. Gonzalez-Zalba,
J. J. L. Morton
Abstract:
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-…
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Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers compact and scalable readout with high fidelity, however further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast-feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier (JPA), that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio (SNR), we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 $μ$s, well-below the requirements for fault-tolerant readout and 30 times faster than without the JPA. Additionally, the JPA allows operation at a lower RF power while maintaining identical SNR. We determine a noise temperature of 200 mK with a contribution from the JPA (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the read-out speed.
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Submitted 23 July, 2019; v1 submitted 22 July, 2019;
originally announced July 2019.
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A CMOS dynamic random access architecture for radio-frequency readout of quantum devices
Authors:
S. Schaal,
A. Rossi,
S. Barraud,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while keeping the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and ap…
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Quantum computing technology is maturing at a relentless pace, yet individual quantum bits are wired one by one. As quantum processors become more complex, they require efficient interfaces to deliver signals for control and readout while keeping the number of inputs manageable. Digital electronics offers solutions to the scaling challenge by leveraging established industrial infrastructure and applying it to integrate silicon-based quantum devices with conventional CMOS circuits. Here, we combine both technologies at milikelvin temperatures and demonstrate the building blocks of a dynamic random access architecture for efficient readout of complex quantum circuits. Our circuit is divided into cells, each containing a CMOS quantum dot (QD) and a field-effect transistor that enables selective readout of the QD, as well as charge storage on the QD gate similar to 1T-1C DRAM technology. We show dynamic readout of two cells by interfacing them with a single radio-frequency resonator. Our results demonstrate a path to reducing the number of input lines per qubit and enable addressing of large-scale device arrays.
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Submitted 11 September, 2018;
originally announced September 2018.
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Conditional dispersive readout of a CMOS quantum dot via an integrated transistor circuit
Authors:
S. Schaal,
S. Barraud,
J. J. L. Morton,
M. F. Gonzalez-Zalba
Abstract:
Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum d…
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Quantum computers require interfaces with classical electronics for efficient qubit control, measurement and fast data processing. Fabricating the qubit and the classical control layer using the same technology is appealing because it will facilitate the integration process, improving feedback speeds and offer potential solutions to wiring and layout challenges. Integrating classical and quantum devices monolithically, using complementary metal-oxide-transistor (CMOS) processes, enables the processor to profit from the most mature industrial technology for the fabrication of large scale circuits. Here we demonstrate the integration of a single-electron charge storage CMOS quantum dot with a CMOS transistor for control of the readout via gate-based dispersive sensing using a lumped element $LC$ resonator. The control field-effect transistor (FET) and quantum dot are fabricated on the same chip using fully-depleted silicon-on-insulator technology. We obtain a charge sensitivity of $δq=165\, μe \mathrm{Hz}^{-1/2}$ when the quantum dot readout is enabled by the control FET. Additionally, we observe a single-electron retention time of the order of a second when storing a single-electron charge on the quantum dot at milli-Kelvin temperatures. These results demonstrate first steps towards time-based multiplexing of gate-based dispersive qubit readout in CMOS technology opening the path for the development of an all-silicon quantum-classical processor.
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Submitted 14 August, 2017;
originally announced August 2017.
