Showing 1–22 of 22 results for author: Scarfato, A

Coupling between magnetism and band structure in a 2D semiconductor

Authors: Lihuan Sun, Marco Gibertini, Alessandro Scarfato, Menghan Liao, Fan Wu, Alberto F. Morpurgo, Christoph Renner

Abstract: Van der Waals semiconducting magnets exhibit a cornucopia of physical phenomena originating from the interplay of their semiconducting and magnetic properties. However, a comprehensive understanding of how semiconducting processes and magnetism are coupled is lacking. We address this question by performing scanning tunneling spectroscopy (STS) measurements on the magnetic semiconductor CrPS$_4$, a… ▽ More Van der Waals semiconducting magnets exhibit a cornucopia of physical phenomena originating from the interplay of their semiconducting and magnetic properties. However, a comprehensive understanding of how semiconducting processes and magnetism are coupled is lacking. We address this question by performing scanning tunneling spectroscopy (STS) measurements on the magnetic semiconductor CrPS$_4$, and by comparing the results to photoluminescence experiments and density functional theory (DFT) calculations. Below the magnetic transition, STS exhibit multiple features absent in the paramagnetic state, caused by the proliferation of electronic bands due to spin splitting with a large ($\simeq 0.5$ eV) exchange energy. The energetic differences between the band edges determined by STS match all observed photoluminescence transitions, which also proliferate in the magnetic state. DFT calculations quantitatively predict the relative positions of all detected bands, explain which pairs of bands lead to radiative transitions, and also reproduce the measured spatial dependence of electronic wavefunctions. Our results reveal how all basic optoelectronic processes observed in CrPS$_4$ can be understood in terms of the evolution of the electronic band structure when entering the magnetic state, and allow us to conclude that individual bands are fully spin-polarized over a broad energy interval. △ Less

Submitted 15 May, 2025; originally announced May 2025.

Doping Tunable CDW Phase Transition in Bulk 1T-ZrSe$_2$

Authors: Andreas Ørsted, Alessandro Scarfato, Céline Barreteau, Enrico Giannini, Christoph Renner

Abstract: Tuneable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunnelling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe$_2$. We find that atomic impurities which locally shift the Fermi level ($E_F$) into the conduction ban… ▽ More Tuneable electronic properties in transition metal dichalcogenides (TMDs) are essential to further their use in device applications. Here, we present a comprehensive scanning tunnelling microscopy and spectroscopy study of a doping-induced charge density wave (CDW) in semiconducting bulk 1T-ZrSe$_2$. We find that atomic impurities which locally shift the Fermi level ($E_F$) into the conduction band trigger a CDW reconstruction concomitantly to the opening of a gap at $E_F$. Our findings shed new light on earlier photoemission spectroscopy and theoretical studies of bulk 1T-ZrSe$_2$, and provide a local understanding of the electron-doping mediated CDW transition observed in semiconducting TMDs. △ Less

Submitted 11 September, 2024; originally announced September 2024.

Comments: 16 pages, 4 figures

Feedback loop dependent charge density wave imaging by scanning tunneling spectroscopy

Authors: Alessandro Scarfato, Árpád Pásztor, Lihuan Sun, Ivan Maggio-Aprile, Vincent Pasquier, Tejas Parasram Singar, Andreas Ørsted, Ishita Pushkarna, Marcello Spera, Enrico Giannini, Christoph Renner

Abstract: Scanning Tunneling Spectroscopy (STS) is a unique technique to probe the local density of states (LDOS) at the atomic scale by measuring the tunneling conductance between a sharp tip and a sample surface. However, the technique suffers of well-known limitations, the so-called set-point effect, which can potentially introduce artifacts in the measurements. We compare several STS imaging schemes app… ▽ More Scanning Tunneling Spectroscopy (STS) is a unique technique to probe the local density of states (LDOS) at the atomic scale by measuring the tunneling conductance between a sharp tip and a sample surface. However, the technique suffers of well-known limitations, the so-called set-point effect, which can potentially introduce artifacts in the measurements. We compare several STS imaging schemes applied to the LDOS modulations of the charge density wave state on atomically flat surfaces, and demonstrate that only constant-height STS is capable of mapping the intrinsic LDOS. In the constant-current STS, commonly used and easier-to-implement, the tip-sample distance variations imposed by the feedback loop result in set-point-dependent STS images and possibly mislead the identification of the CDW gap edges. △ Less

Submitted 24 July, 2024; v1 submitted 5 June, 2024; originally announced June 2024.

Comments: 7 pages, 6 figures

Determining spin-orbit coupling in graphene by quasiparticle interference imaging

Authors: Lihuan Sun, Louk Rademaker, Diego Mauro, Alessandro Scarfato, Árpád Pásztor, Ignacio Gutiérrez-Lezama, Zhe Wang, Jose Martinez-Castro, Alberto F. Morpurgo, Christoph Renner

Abstract: Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backsca… ▽ More Inducing and controlling spin-orbit coupling (SOC) in graphene is key to create topological states of matter, and for the realization of spintronic devices. Placing graphene onto a transition metal dichalcogenide is currently the most successful strategy to achieve this goal, but there is no consensus as to the nature and the magnitude of the induced SOC. Here, we show that the presence of backscattering in graphene-on-WSe$_2$ heterostructures can be used to probe SOC and to determine its strength quantitatively, by imaging quasiparticle interference with a scanning tunneling microscope. A detailed theoretical analysis of the Fourier transform of quasiparticle interference images reveals that the induced SOC consists of a valley-Zeeman ($λ_{\text{vZ}}\approx 2$ meV) and a Rashba ($λ_\text{R}\approx 15$ meV) term, one order of magnitude larger than what theory predicts, but in excellent agreement with earlier transport experiments. The validity of our analysis is confirmed by measurements on a 30 degree twist angle heterostructure that exhibits no backscattering, as expected from symmetry considerations. Our results demonstrate a viable strategy to determine SOC quantitatively by imaging quasiparticle interference. △ Less

Submitted 9 December, 2022; originally announced December 2022.

Tunable biaxial strain device for low dimensional materials

Authors: Vincent Pasquier, Alessandro Scarfato, Jose Martinez-Castro, Antoine Guipet, Christoph Renner

Abstract: Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain where there is often a trade-off between maximum strain and uniformity, reversibility and device size. We present a compact device that allows th… ▽ More Strain is attracting much interest as a mean to tune the properties of thin exfoliated two-dimensional materials and their heterostructures. Numerous devices to apply tunable uniaxial strain are proposed in the literature, but only few for biaxial strain where there is often a trade-off between maximum strain and uniformity, reversibility and device size. We present a compact device that allows the controlled application of uniform in-plane biaxial strain, with maximum deformation and uniformity comparable to those found in much larger devices. Its performance and strain uniformity over the sample area are modeled using finite element analysis and demonstrated by measuring the response of exfoliated 2H-MoS$_2$ to strain by Raman spectroscopy. △ Less

Submitted 30 May, 2022; v1 submitted 27 May, 2022; originally announced May 2022.

Comments: 10 pages, 4 figures

Journal ref: Review of Scientific Instruments 94, 013905 (2023)

Multiband charge density wave exposed in a transition metal dichalcogenide

Authors: Árpád Pásztor, Alessandro Scarfato, Marcello Spera, Felix Flicker, Céline Barreteau, Enrico Giannini, Jasper van Wezel, Christoph Renner

Abstract: In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been largely ignored so far. Here, combining energy dependent scanning tunnelling microscopy (STM) topography with a simple model of the charge modulations and a self-co… ▽ More In the presence of multiple bands, well-known electronic instabilities may acquire new complexity. While multiband superconductivity is the subject of extensive studies, the possibility of multiband charge density waves (CDWs) has been largely ignored so far. Here, combining energy dependent scanning tunnelling microscopy (STM) topography with a simple model of the charge modulations and a self-consistent calculation of the CDW gap, we find evidence for a multiband CDW in 2H-NbSe$_2$. This CDW not only involves the opening of a gap on the inner band around the K-point, but also on the outer band. This leads to spatially out-of-phase charge modulations from electrons on these two bands, which we detect through a characteristic energy dependence of the CDW contrast in STM images. △ Less

Submitted 29 January, 2021; originally announced February 2021.

Journal ref: Nat Commun 12, 6037 (2021)

Insight into the charge density wave gap from contrast inversion in topographic STM images

Authors: Marcello Spera, Alessandro Scarfato, Árpad Pásztor, Enrico Giannini, David R. Bowler, Christoph Renner

Abstract: Charge density waves (CDWs) are understood in great details in one dimension, but they remain largely enigmatic in two dimensional systems. In particular, numerous aspects of the associated energy gap and the formation mechanism are not fully understood. Two long standing riddles are the amplitude and position of the CDW gap with respect to the Fermi level ($E_F$) and the frequent absence of CDW c… ▽ More Charge density waves (CDWs) are understood in great details in one dimension, but they remain largely enigmatic in two dimensional systems. In particular, numerous aspects of the associated energy gap and the formation mechanism are not fully understood. Two long standing riddles are the amplitude and position of the CDW gap with respect to the Fermi level ($E_F$) and the frequent absence of CDW contrast inversion (CI) between opposite bias scanning tunneling microscopy (STM) images. Here, we find compelling evidence that these two issues are intimately related. Combining density functional theory and STM to analyse the CDW pattern and modulation amplitude in 1$T$-TiSe$_2$, we find that CI takes place at an unexpected negative sample bias because the CDW gap opens away from $E_F$, deep inside the valence band. This bias becomes increasingly negative as the CDW gap shifts to higher binding energy with electron doping. This study shows the importance of CI in STM images to identify periodic modulations with a CDW and to gain valuable insight into the CDW gap, whose measurement is notoriously controversial. △ Less

Submitted 2 December, 2020; v1 submitted 4 December, 2019; originally announced December 2019.

Comments: Main text 8 pages, 4 figures + Supplemental Material 7 pages, 6 figures

Journal ref: Physical Review Letters 125, 267603 (2020)

Scanning Tunneling Microscopy of an Air Sensitive Dichalcogenide Through an Encapsulating Layer

Authors: Jose Martinez-Castro, Diego Mauro, Árpád Pásztor, Ignacio Gutiérrez-Lezama, Alessandro Scarfato, Alberto F. Morpurgo, Christoph Renner

Abstract: Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (ST… ▽ More Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (STM) and spectroscopy (STS). To this end, we report a systematic STM/STS investigation of a model system consisting of an exfoliated 2H-NbSe2 crystal capped with a protective 2H-MoS2 monolayer. We observe different electronic coupling between MoS2 and NbSe2, from a strong coupling when their lattices are aligned within a few degrees to 2 essentially no coupling for 30° misaligned layers. We show that STM always probes intrinsic NbSe2 properties such as the superconducting gap and charge density wave at low temperature when setting the tunneling bias inside the MoS2 band gap, irrespective of the relative angle between the NbSe2 and MoS2 lattices. This study demonstrates that encapsulation is fully compatible with STM/STS investigations of 2D materials. △ Less

Submitted 13 February, 2019; originally announced February 2019.

Comments: 19 pages, 5 figures

Journal ref: Nano Letters 18,(2018)6696-6702

Towards surface diffusion potential mapping on atomic length scale

Authors: Renan Villarreal, Christopher J. Kirkham, Alessandro Scarfato, David R. Bowler, Christoph Renner

Abstract: The surface diffusion potential landscape plays an essential role in a number of physical and chemical processes such as self-assembly and catalysis. Diffusion energy barriers can be calculated theoretically for simple systems, but there is currently no experimental technique to systematically measure them on the relevant atomic length scale. Here, we introduce an atomic force microscopy based met… ▽ More The surface diffusion potential landscape plays an essential role in a number of physical and chemical processes such as self-assembly and catalysis. Diffusion energy barriers can be calculated theoretically for simple systems, but there is currently no experimental technique to systematically measure them on the relevant atomic length scale. Here, we introduce an atomic force microscopy based method to semiquantitatively map the surface diffusion potential on an atomic length scale. In this proof of concept experiment, we show that the atomic force microscope damping signal at constant frequency-shift can be linked to nonconservative processes associated with the lowering of energy barriers and compared with calculated single-atom diffusion energy barriers. △ Less

Submitted 26 May, 2019; v1 submitted 6 December, 2018; originally announced December 2018.

Comments: 8 pages and 3 figures

Journal ref: Journal of Applied Physics 125, 184301 (2019)

Holographic imaging of the complex charge density wave order parameter

Authors: Árpád Pásztor, Alessandro Scarfato, Marcello Spera, Céline Barreteau, Enrico Giannini, Christoph Renner

Abstract: The charge density wave (CDW) in solids is a collective ground state combining lattice distortions and charge ordering. It is defined by a complex order parameter with an amplitude and a phase. The amplitude and wavelength of the charge modulation are readily accessible to experiment. However, accurate measurements of the corresponding phase are significantly more challenging. Here we combine reci… ▽ More The charge density wave (CDW) in solids is a collective ground state combining lattice distortions and charge ordering. It is defined by a complex order parameter with an amplitude and a phase. The amplitude and wavelength of the charge modulation are readily accessible to experiment. However, accurate measurements of the corresponding phase are significantly more challenging. Here we combine reciprocal and real space information to map the full complex order parameter based on topographic scanning tunneling microscopy (STM) images. Our technique overcomes limitations of earlier Fourier space based techniques to achieve distinct amplitude and phase images with high spatial resolution. Applying this analysis to transition metal dichalcogenides provides striking evidence that their CDWs consist of three individual charge modulations whose ordering vectors are connected by the fundamental rotational symmetry of the crystalline lattice. Spatial variations in the relative phases of these three modulations account for the different contrasts often observed in STM topographic images. Phase images further reveal topological defects and discommensurations, a singularity predicted by theory for a nearly commensurate CDW. Such precise real space mapping of the complex order parameter provides a powerful tool for a deeper understanding of the CDW ground state whose formation mechanisms remain largely unclear. △ Less

Submitted 22 June, 2018; originally announced June 2018.

Journal ref: Phys. Rev. Research 1, 033114 (2019)

Hole Transport in Exfoliated Monolayer MoS$_2$

Authors: Evgeniy Ponomarev, Árpád Pásztor, Adrien Waelchli, Alessandro Scarfato, Nicolas Ubrig, Christoph Renner, Alberto F. Morpurgo

Abstract: Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical response of these systems is strongly determined by defects in a way specific to each individual compound. Here we investigate the ability of exfoliated monolayer… ▽ More Ideal monolayers of common semiconducting transition metal dichalcogenides (TMDCs) such as MoS$_2$, WS$_2$, MoSe$_2$, and WSe$_2$ possess many similar electronic properties. As it is the case for all semiconductors, however, the physical response of these systems is strongly determined by defects in a way specific to each individual compound. Here we investigate the ability of exfoliated monolayers of these TMDCs to support high-quality, well-balanced ambipolar conduction, which has been demonstrated for WS$_2$, MoSe$_2$, and WSe$_2$, but not for MoS$_2$. Using ionic-liquid gated transistors we show that, contrary to WS$_2$, MoSe$_2$, and WSe$_2$, hole transport in exfoliated MoS$_2$ monolayers is systematically anomalous, exhibiting a maximum in conductivity at negative gate voltage (V$_G$) followed by a suppression of up to 100 times upon further increasing V$_G$. To understand the origin of this difference we have performed a series of experiments including the comparison of hole transport in MoS$_2$ monolayers and thicker multilayers, in exfoliated and CVD-grown monolayers, as well as gate-dependent optical measurements (Raman and photoluminescence) and scanning tunneling imaging and spectroscopy. In agreement with existing {\it ab-initio} calculations, the results of all these experiments are consistently explained in terms of defects associated to chalcogen vacancies that only in MoS$_2$ monolayers -- but not in thicker MoS$_2$ multilayers nor in monolayers of the other common semiconducting TMDCs -- create in-gap states near the top of the valence band that act as strong hole traps. Our results demonstrate the importance of studying systematically how defects determine the properties of 2D semiconducting materials and of developing methods to control them. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Journal ref: ACS Nano, 2018, 12 (3), pp 2669-2676

Energy-dependent spatial texturing of the charge order in $1T$-Cu$_x$TiSe$_2$

Authors: Marcello Spera, Alessandro Scarfato, Enrico Giannini, Christoph Renner

Abstract: We report a detailed study of the microscopic effects of Cu intercalation on the charge density wave (CDW) in 1\textit{T}-Cu$_x$TiSe$_2$. Scanning tunneling microscopy and spectroscopy (STM/STS) reveal a unique, Cu driven spatial texturing of the charge ordered phase, with the appearance of energy dependent CDW patches and sharp $π$-phase shift domain walls ($π$DWs). The energy and doping dependen… ▽ More We report a detailed study of the microscopic effects of Cu intercalation on the charge density wave (CDW) in 1\textit{T}-Cu$_x$TiSe$_2$. Scanning tunneling microscopy and spectroscopy (STM/STS) reveal a unique, Cu driven spatial texturing of the charge ordered phase, with the appearance of energy dependent CDW patches and sharp $π$-phase shift domain walls ($π$DWs). The energy and doping dependencies of the patchwork are directly linked to the inhomogeneous potential landscape due to the Cu intercalants. They imply a CDW gap with unusual features, including a large amplitude, the opening below the Fermi level and a shift to higher binding energy with electron doping. Unlike the patchwork, the $π$DWs occur independently of the intercalated Cu distribution. They remain atomically sharp throughout the investigated phase diagram and occur both in superconducting and non-superconducting specimen. These results provide unique atomic-scale insight on the CDW ground state, questioning the existence of incommensurate CDW domain walls and contributing to understand its formation mechanism and interplay with superconductivity. △ Less

Submitted 14 December, 2018; v1 submitted 11 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 99, 155133 (2019)

Dimensional cross-over of the charge density wave order parameter in thin exfoliated 1T-VSe$_2$

Authors: Árpád Pásztor, Alessandro Scarfato, Céline Barreteau, Enrico Giannini, Christoph Renner

Abstract: The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of potential extrinsic effects are paramount to harness the electronic properties of such atomic foils. One striking example is the charge density wave (CDW) transition te… ▽ More The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of potential extrinsic effects are paramount to harness the electronic properties of such atomic foils. One striking example is the charge density wave (CDW) transition temperature in layered dichalcogenides whose thickness dependence remains unclear in the ultrathin limit. Here we present a detailed study of the thickness and temperature dependences of the CDW in VSe$_2$ by scanning tunnelling microscopy (STM). We show that mapping the real-space CDW periodicity over a broad thickness range unique to STM provides essential insight. We introduce a robust derivation of the local order parameter and transition temperature based on the real space charge modulation amplitude. Both quantities exhibit a striking non-monotonic thickness dependence that we explain in terms of a 3D to 2D dimensional crossover in the FS topology. This finding highlights thickness as a true tuning parameter of the electronic ground state and reconciles seemingly contradicting thickness dependencies determined in independent transport studies. △ Less

Submitted 21 March, 2017; originally announced March 2017.

Journal ref: 2D Materials 4. 041005 (2017)

Stripe and short range order in the charge density wave of 1T-Cu$_x$TiSe$_2$

Authors: A. M. Novello, M. Spera, A. Scarfato, A. Ubaldini, E. Giannini, D. R. Bowler, Ch. Renner

Abstract: We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu$_{\text{x}}$TiSe$_{\text{2}}$ by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period do… ▽ More We study the impact of Cu intercalation on the charge density wave (CDW) in 1T-Cu$_{\text{x}}$TiSe$_{\text{2}}$ by scanning tunneling microscopy and spectroscopy. Cu atoms, identified through density functional theory modeling, are found to intercalate randomly on the octahedral site in the van der Waals gap and to dope delocalized electrons near the Fermi level. While the CDW modulation period does not depend on Cu content, we observe the formation of charge stripe domains at low Cu content (x$<$0.02) and a breaking up of the commensurate order into 2$\times$2 domains at higher Cu content. The latter shrink with increasing Cu concentration and tend to be phase-shifted. These findings invalidate a proposed excitonic pairing as the primary CDW formation mechanism in this material. △ Less

Submitted 22 September, 2016; originally announced September 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 118, 017002 (2017)

STM microscopy of the CDW in 1T-TiSe2 in the presence of single atom defects

Authors: A. M. Novello, B. Hildebrand, A. Scarfato, C. Didiot, G. Monney, A. Ubaldini, H. Berger, D. R. Bowler, P. Aebi, Ch. Renner

Abstract: We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic an… ▽ More We present a detailed low temperature scanning tunneling microscopy study of the commensurate charge density wave (CDW) in 1$T$-TiSe$_2$ in the presence of single atom defects. We find no significant modification of the CDW lattice in single crystals with native defects concentrations where some bulk probes already measure substantial reductions in the CDW phase transition signature. Systematic analysis of STM micrographs combined with density functional theory modelling of atomic defect patterns indicate that the observed CDW modulation lies in the Se surface layer. The defect patterns clearly show there are no 2$H$-polytype inclusions in the CDW phase, as previously found at room temperature [Titov A.N. et al, Phys. Sol. State 53, 1073 (2011). They further provide an alternative explanation for the chiral Friedel oscillations recently reported in this compound [J. Ishioka et al., Phys. Rev. B 84, 245125, (2011)]. △ Less

Submitted 19 July, 2015; v1 submitted 22 February, 2015; originally announced February 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 92, 081101 (2015)

Doping nature of native defects in 1T-TiSe2

Authors: B. Hildebrand, C. Didiot, A. M. Novello, G. Monney, A. Scarfato, A. Ubaldini, H. Berger, D. R. Bowler, C. Renner, P. Aebi

Abstract: The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native… ▽ More The transition metal dichalcogenide 1T-TiSe2 is a quasi two-dimensional layered material with a charge density wave (CDW) transition temperature of TCDW 200 K. Self-doping effects for crystals grown at different temperatures introduce structural defects, modify the temperature dependent resistivity and strongly perturbate the CDW phase. Here we study the structural and doping nature of such native defects combining scanning tunneling microscopy/spectroscopy and ab initio calculations. The dominant native single atom dopants we identify in our single crystals are intercalated Ti atoms, Se vacancies and Se substitutions by residual iodine and oxygen. △ Less

Submitted 2 May, 2014; v1 submitted 28 March, 2014; originally announced March 2014.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Lett. 112, 197001 (2014)

Local probing of the field emission stability of vertically aligned multiwalled carbon nanotubes

Authors: F. Giubileo, A. Di Bartolomeo, A. Scarfato, L. Iemmo, F. Bobba, M. Passacantando, S. Santucci, A. M. Cucolo

Abstract: Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to me… ▽ More Metallic cantilever in high vacuum atomic force microscope has been used as anode for field emission experiments from densely packed vertically aligned multi-walled carbon nanotubes. The high spatial resolution provided by the scanning probe technique allowed precise setting of the tip-sample distance in the submicron region. The dimension of the probe (curvature radius below 50nm) allowed to measure current contribution from sample areas smaller than 1um^2. The study of long-term stability evidenced that on these small areas the field emission current remains stable (within 10% fluctuations) several hours (at least up to 72 hours) at current intensities between 10-5A and 10-8A. Improvement of the current stability has been observed after performing long-time Joule heating conditioning to completely remove possible adsorbates on the nanotubes. △ Less

Submitted 29 February, 2008; originally announced February 2008.

Comments: 15 pages, 7 figures

Journal ref: CARBON Volume: 47 Issue: 4 Pages: 1074-1080 Published: APR 2009

A local field emission study of partially aligned carbon-nanotubes by AFM probe

Authors: A. Di Bartolomeo, A. Scarfato, F. Giubileo, F. Bobba, M. Biasucci, A. M. Cucolo, S. Santucci, M. Passacantando

Abstract: We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventi… ▽ More We report on the application of Atomic Force Microscopy (AFM) for studying the Field Emission (FE) properties of a dense array of long and vertically quasi-aligned multi-walled carbon nanotubes grown by catalytic Chemical Vapor Deposition on a silicon substrate. The use of nanometric probes enables local field emission measurements allowing investigation of effects non detectable with a conventional parallel plate setup, where the emission current is averaged on a large sample area. The micrometric inter-electrode distance let achieve high electric fields with a modest voltage source. Those features allowed us to characterize field emission for macroscopic electric fields up to 250 V/$μ$m and attain current densities larger than 10$^5$ A/cm$^2$. FE behaviour is analyzed in the framework of the Fowler-Nordheim theory. A field enhancement factor $γ\approx$ 40-50 and a turn-on field $E_{turn-on} \sim$15 V/$μ$m at an inter-electrode distance of 1 $μ$m are estimated. Current saturation observed at high voltages in the I-V characteristics is explained in terms of a series resistance of the order of M$Ω$. Additional effects as electrical conditioning, CNT degradation, response to laser irradiation and time stability are investigated and discussed. △ Less

Submitted 28 February, 2007; originally announced February 2007.

Journal ref: CARBON Volume: 45 Issue: 15 Pages: 2957-2971 Published: DEC 2007

Evidence of s-Wave Subdominant Order Parameter in YBCO from Break Junction Tunneling Spectra

Authors: A. I. Akimenko, F. Bobba, F. Giubileo, V. Gudimenko, A. Scarfato, A. M. Cucolo

Abstract: The tunneling spectra of YBa2Cu3O7 break-junctions have been investigated for the tunneling direction close to the node one. The zero-bias conductance peak (ZBCP) and Josephson current have been studied with temperature and magnetic field. The observed deep splitting of ZBCP which starts at Ts<20-30K is in agreement with the theory for the dx2-y2+-is order parameter [Y. Tanuma, Y. Tanaka, and S.… ▽ More The tunneling spectra of YBa2Cu3O7 break-junctions have been investigated for the tunneling direction close to the node one. The zero-bias conductance peak (ZBCP) and Josephson current have been studied with temperature and magnetic field. The observed deep splitting of ZBCP which starts at Ts<20-30K is in agreement with the theory for the dx2-y2+-is order parameter [Y. Tanuma, Y. Tanaka, and S. Kashiwaya, Phys. Rev. B 64, 214519 (2001)]. The low (0.04T) magnetic field depresses significantly such splitting. The 1/T temperature dependence of maximum Josephson current goes to saturation at T<Ts also confirming the mixed order parameter formation. △ Less

Submitted 24 April, 2007; v1 submitted 21 June, 2006; originally announced June 2006.

Comments: 4 pages, 4 figures

Local Tunneling Study of Three-Dimensional Order Parameter in the $π$-band of Al-doped MgB$_2$ Single Crystals

Authors: F. Giubileo, F. Bobba, A. Scarfato, A. M. Cucolo, A. Kohen, D. Roditchev, N. Zhigadlo, J. Karpinski

Abstract: We have performed local tunneling spectroscopy on high quality Mg$_{1-x}$Al$_x$B$_2$ single crystals by means of Variable Temperature Scanning Tunneling Spectroscopy (STS) in magnetic field up to 3 Tesla. Single gap conductance spectra due to c-axis tunneling were extensively measured, probing different amplitudes of the three-dimensional $Δ_π$ as a function of Al content. Temperature and magnet… ▽ More We have performed local tunneling spectroscopy on high quality Mg$_{1-x}$Al$_x$B$_2$ single crystals by means of Variable Temperature Scanning Tunneling Spectroscopy (STS) in magnetic field up to 3 Tesla. Single gap conductance spectra due to c-axis tunneling were extensively measured, probing different amplitudes of the three-dimensional $Δ_π$ as a function of Al content. Temperature and magnetic field dependences of the conductance spectra were studied in S-I-N configuration: the effect of the doping resulted in a monotonous reduction of the locally measured $T_C$ down to 24K for x=0.2. On the other hand, we have found that the gap amplitude shows a maximum value $Δ_π= 2.3$ meV for x=0.1, while the $Δ_π/ T_C$ ratio increases monotonously with doping. The locally measured upper critical field was found to be strongly related to the gap amplitude, showing the maximum value $H_{c2}\simeq3T$ for x=0.1 substituted samples. For this Al concentration the data revealed some spatial inhomogeneity in the distribution of $Δ_π$ on nanometer scale. △ Less

Submitted 13 April, 2006; originally announced April 2006.

Comments: 4 pages, 3 figures

Journal ref: Physical Review B 76, 024507 (2007)

Point Contact Spectra on YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ bilayers

Authors: Samanta Piano, Fabrizio Bobba, Adele De Santis, Filippo Giubileo, Alessandro Scarfato, Anna Maria Cucolo

Abstract: We present conductance characteristics of point contact junctions realized between a normal Pt-Ir tip and YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ (YBCO/LCMO) bilayers. The point contact characteristics show a zero bias conductance peak, as a consequence of the formation of Andreev bound states at the YBCO Fermi level. The temperature evolution of the spectra reveals a depressed zero b… ▽ More We present conductance characteristics of point contact junctions realized between a normal Pt-Ir tip and YBa$_2$Cu$_3$O$_{7-x}$/La$_{0.7}$Ca$_{0.3}$MnO$_3$ (YBCO/LCMO) bilayers. The point contact characteristics show a zero bias conductance peak, as a consequence of the formation of Andreev bound states at the YBCO Fermi level. The temperature evolution of the spectra reveals a depressed zero bias peak and a reduced superconducting energy gap, both explainable in terms of spin polarization effects due to the LCMO layer. △ Less

Submitted 30 January, 2006; originally announced January 2006.

Comments: 4 pages, 4 EPS figures. Proceedings of EUCAS 2005. Accepted in Journal of Physics: Conference Series

Journal ref: Journal of Physics: Conference Series 43, 1123 (2006)

Subharmonic gap structures and Josephson effect in MgB2/Nb micro-constrictions

Authors: Filippo Giubileo, Marco Aprili, Fabrizio Bobba, Samanta Piano, Alessandro Scarfato, Anna Maria Cucolo

Abstract: Superconducting micro-constrictions between Nb tips and high quality MgB$_{2}$ pellets have been realized by means of a point-contact inset, driven by a micrometric screw. Measurements of the current-voltage characteristics and of the dynamical conductance versus bias have been performed in the temperature range between 4.2 K and 500 K. Above the Nb critical temperature T$_{C}^{Nb}$, the conduct… ▽ More Superconducting micro-constrictions between Nb tips and high quality MgB$_{2}$ pellets have been realized by means of a point-contact inset, driven by a micrometric screw. Measurements of the current-voltage characteristics and of the dynamical conductance versus bias have been performed in the temperature range between 4.2 K and 500 K. Above the Nb critical temperature T$_{C}^{Nb}$, the conductance of the MgB$_2$/normal-metal constrictions behaves as predicted by the BTK model for low resistance contacts while high resistance junctions show quasiparticle tunneling characteristics. Consistently, from the whole set of data we infer the value $Δ_π = 2.5 \pm 0.2$ meV for the three-dimensional gap of MgB$_2$. Below T$_{C}^{Nb}$, low resistance contacts show Josephson current and subharmonic gap structures (SGS), due to multiple Andreev reflections. Simultaneous observations of both features, unambiguously indicate coupling of the 3D band of MgB$_2$ with the Nb superconducting order parameter. We found that the temperature dependence of the Josephson critical current follows the classical Ambegaokar-Baratoff behavior with a value $I_CR_N=(2.1 \pm 0.1)$ meV at low temperatures. △ Less

Submitted 30 January, 2006; v1 submitted 4 August, 2005; originally announced August 2005.

Comments: 8 pages, 5 figures. Replaced with published version

Journal ref: Phys. Rev. B 72, 174518 (2005)