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Spin polarization gate device based on the chirality-induced spin selectivity and robust nonlocal spin polarization
Authors:
Hiroaki Shishido,
Yuta Hosaka,
Kenta Monden,
Akito Inui,
Taisei Sayo,
Yusuke Kousaka,
Yoshihiko Togawa
Abstract:
Nonlocal spin polarization phenomena are thoroughly investigated in the devices made of chiral metallic single crystals of CrNb$_3$S$_6$ and NbSi$_2$ as well as of polycrystalline NbSi$_2$. We demonstrate that simultaneous injection of charge currents in the opposite ends of the device with the nonlocal setup induces the switching behavior of spin polarization in a controllable manner. Such a nonl…
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Nonlocal spin polarization phenomena are thoroughly investigated in the devices made of chiral metallic single crystals of CrNb$_3$S$_6$ and NbSi$_2$ as well as of polycrystalline NbSi$_2$. We demonstrate that simultaneous injection of charge currents in the opposite ends of the device with the nonlocal setup induces the switching behavior of spin polarization in a controllable manner. Such a nonlocal spin polarization appears regardless of the difference in the materials and device dimensions, implying that the current injection in the nonlocal configuration splits spin-dependent chemical potentials throughout the chiral crystal even though the current is injected into only a part of the crystal. We show that the proposed model of the spin dependent chemical potentials explains the experimental data successfully. The nonlocal double-injection device may offer significant potential to control the spin polarization to large areas because of the nature of long-range nonlocal spin polarization in chiral materials.
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Submitted 8 August, 2023;
originally announced August 2023.
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Chirality-selected crystal growth and spin polarization over centimeters of transition metal disilicide crystals
Authors:
Yusuke Kousaka,
Taisei Sayo,
Satoshi Iwasaki,
Ryo Saki,
Chiho Shimada,
Hiroaki Shishido,
Yoshihiko Togawa
Abstract:
We performed a chirality-controlled crystal growth of transition metal disilicide NbSi$_{2}$ and TaSi$_{2}$ by using a laser-diode-heated floating zone (LDFZ) method. The crystal chirality was evaluated in the crystals of centimeters in length by performing single crystal X-ray diffraction as well as probing a spin polarization originating from chirality-induced spin selectivity (CISS) effect. The…
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We performed a chirality-controlled crystal growth of transition metal disilicide NbSi$_{2}$ and TaSi$_{2}$ by using a laser-diode-heated floating zone (LDFZ) method. The crystal chirality was evaluated in the crystals of centimeters in length by performing single crystal X-ray diffraction as well as probing a spin polarization originating from chirality-induced spin selectivity (CISS) effect. The crystals of right-handed NbSi$_{2}$ and of left-handed TaSi$_{2}$ were obtained in the conventional LDFZ crystal growth, while the left-handed NbSi$_{2}$ and right-handed TaSi$_{2}$ crystals were grown by the LDFZ method with the composition-gradient feed rods. The spin polarization via the CISS was observed over centimeters in the NbSi$_{2}$ single crystals and the sign of the CISS signals was dependent on the chirality of crystals. The correlation between the crystal chirality and CISS signals indicates that the CISS measurements work as a non-destructive method for chirality determination even in centimeter-long specimens.
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Submitted 8 December, 2022;
originally announced December 2022.
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Chirality-Controlled Enantiopure Crystal Growth of a Transition Metal Monosilicide by a Floating Zone Method
Authors:
Yusuke Kousaka,
Satoshi Iwasaki,
Taisei Sayo,
Hiroshi Tanida,
Takeshi Matsumura,
Shingo Araki,
Jun Akimitsu,
Yoshihiko Togawa
Abstract:
We performed a crystal growth to obtain chirality-controlled enantiopure crystals using a laser-diode-heated floating zone (LDFZ) method with a composition-gradient feed rod. It has been argued that the crystal handedness of $T$Si ($T$ : transition metal) is fixed depending on $T$ in the case of the ones grown by the conventional methods. We found that right-handed single crystals of CoSi and MnSi…
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We performed a crystal growth to obtain chirality-controlled enantiopure crystals using a laser-diode-heated floating zone (LDFZ) method with a composition-gradient feed rod. It has been argued that the crystal handedness of $T$Si ($T$ : transition metal) is fixed depending on $T$ in the case of the ones grown by the conventional methods. We found that right-handed single crystals of CoSi and MnSi were grown from the composition gradient feed rods that consist of FeSi--CoSi and FeSi--MnSi, respectively. The obtained CoSi and MnSi crystals inherit the chirality from the seed part of FeSi, which grows in a right-handed structure, and thus have the chirality opposite to that for the crystals in the literature. The LDFZ method with the feed rods with various combinations of $T$Si compounds enables a flexible control of the chirality of $T$Si and will be useful for clarifying the interplay between the crystalline chirality and chirality-induced physical responses.
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Submitted 23 January, 2022;
originally announced January 2022.
