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Low-frequency spin qubit detuning noise in highly purified $^{28}$Si/SiGe
Authors:
Tom Struck,
Arne Hollmann,
Floyd Schauer,
Olexiy Fedorets,
Andreas Schmidbauer,
Kentarou Sawano,
Helge Riemann,
Nikolay V. Abrosimov,
Łukasz Cywiński,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin e…
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The manipulation fidelity of a single electron qubit gate-confined in a $^{28}$Si/SiGe quantum dot has recently been drastically improved by nuclear isotope purification. Here, we identify the dominant source for low-frequency qubit detuning noise in a device with an embedded nanomagnet, a remaining $^{29}$Si concentration of only 60$\,$ppm in the strained $^{28}$Si quantum well layer and a spin echo decay time $T_2^{\text{echo}}=128\,μ$s. The power spectral density (PSD) of the charge noise explains both the observed transition of a $1/f^2$- to a $1/f$-dependence of the detuning noise PSD as well as the observation of a decreasing time-ensemble spin dephasing time from $T_2^* \approx 20\,μ$s with increasing measurement time over several hours. Despite their strong hyperfine contact interaction, the few $^{73}$Ge nuclei overlapping with the quantum dot in the barrier do not limit $T_2^*$, as their dynamics is frozen on a few hours measurement scale. We conclude that charge noise and the design of the gradient magnetic field is the key to further improve the qubit fidelity.
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Submitted 25 September, 2019;
originally announced September 2019.
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Large, tunable valley splitting and single-spin relaxation mechanisms in a Si/Si$_x$Ge$_{1-x}$ quantum dot
Authors:
Arne Hollmann,
Tom Struck,
Veit Langrock,
Andreas Schmidbauer,
Floyd Schauer,
Tim Leonhardt,
Kentarou Sawano,
Helge Riemann,
Nikolay V. Abrosimov,
Dominique Bougeard,
Lars R. Schreiber
Abstract:
Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown…
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Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices. Here, we demonstrate a robust and large valley splitting exceeding 200 $μ$eV in a gate-defined single quantum dot, hosted in molecular-beam epitaxy-grown $^{28}$Si/SiGe. The valley splitting is monotonically and reproducibly tunable up to 15 % by gate voltages, originating from a 6 nm lateral displacement of the quantum dot. We observe static spin relaxation times $T_1>1$ s at low magnetic fields in our device containing an integrated nanomagnet. At higher magnetic fields, $T_1$ is limited by the valley hotspot and by phonon noise coupling to intrinsic and artificial spin-orbit coupling, including phonon bottlenecking.
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Submitted 30 March, 2020; v1 submitted 9 July, 2019;
originally announced July 2019.
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Nonmonotonic bias dependence of local spin accumulation signals in ferromagnet/semiconductor lateral spin-valve devices
Authors:
Y. Fujita,
M. Yamada,
M. Tsukahara,
T. Naito,
S. Yamada,
S. Oki,
K. Sawano,
K. Hamaya
Abstract:
We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively…
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We find extraordinary behavior of the local two-terminal spin accumulation signals in ferromagnet (FM)/semiconductor (SC) lateral spin-valve devices. With respect to the bias voltage applied between two FM/SC Schottky tunnel contacts, the local spin-accumulation signal can show nonmonotonic variations, including a sign inversion. A part of the nonmonotonic features can be understood qualitatively by considering the rapid reduction in the spin polarization of the FM/SC interfaces with increasing bias voltage. In addition to the sign inversion of the FM/SC interface spin polarization, the influence of the spin-drift effect in the SC layer and the nonlinear electrical spin conversion at a biased FM/SC contact are discussed.
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Submitted 15 August, 2019; v1 submitted 21 March, 2018;
originally announced March 2018.
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Pure spin current transport in a SiGe alloy
Authors:
T. Naito,
M. Yamada,
M. Tsukahara,
S. Yamada,
K. Sawano,
K. Hamaya
Abstract:
Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{\rm 0.1}$Ge$_{\rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n \sim$ 5.0 $\times$ 10$^{18}$ cm$^{-3}$). Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, manipulation, and detection of pure spin currents, are observed. The spin diffusion…
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Using four-terminal nonlocal magnetoresistance measurements in lateral spin-valve devices with Si$_{\rm 0.1}$Ge$_{\rm 0.9}$, we study pure spin current transport in a degenerate SiGe alloy ($n \sim$ 5.0 $\times$ 10$^{18}$ cm$^{-3}$). Clear nonlocal spin-valve signals and Hanle-effect curves, indicating generation, manipulation, and detection of pure spin currents, are observed. The spin diffusion length and spin lifetime of the Si$_{\rm 0.1}$Ge$_{\rm 0.9}$ layer at low temperatures are reliably estimated to be $\sim$ 0.5 $μ$m and $\sim$ 0.2 ns, respectively. This study demonstrates the possibility of exploring physics and developing spintronic applications using SiGe alloys.
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Submitted 25 April, 2018; v1 submitted 23 January, 2018;
originally announced January 2018.
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Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements
Authors:
Michihiro Yamada,
Makoto Tsukahara,
Yuichi Fujita,
Takahiro Naito,
Shinya Yamada,
Kentarou Sawano,
Kohei Hamaya
Abstract:
We demonsrtate electrical spin injection and detection in $n$-type Ge ($n$-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral spin-valve (LSV) devices with Heusler-alloy Schottky tunnel contacts. The spin diffusion length ($λ$$_{\rm Ge}$) of the Ge layer used ($n \sim$ 1 $\times$ 10$^{19}$ cm$^{-3}$) at 296 K is estimated to be $\sim$ 0.44…
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We demonsrtate electrical spin injection and detection in $n$-type Ge ($n$-Ge) at room temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in lateral spin-valve (LSV) devices with Heusler-alloy Schottky tunnel contacts. The spin diffusion length ($λ$$_{\rm Ge}$) of the Ge layer used ($n \sim$ 1 $\times$ 10$^{19}$ cm$^{-3}$) at 296 K is estimated to be $\sim$ 0.44 $\pm$ 0.02 $μ$m. Room-temperature spin signals can be observed reproducibly at the low bias voltage range ($\le$ 0.7 V) for LSVs with relatively low resistance-area product ($RA$) values ($\le$ 1 k$Ω$$μ$m$^{2}$). This means that the Schottky tunnel contacts used here are more suitable than ferromagnet/MgO tunnel contacts ($RA \ge$ 100 k$Ω$$μ$m$^{2}$) for developing Ge spintronic applications.
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Submitted 2 August, 2017;
originally announced August 2017.
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Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
Authors:
Rai Moriya,
Kentarou Sawano,
Yusuke Hoshi,
Satoru Masubuchi,
Yasuhiro Shiraki,
Andreas Wild,
Christian Neumann,
Gerhard Abstreiter,
Dominique Bougeard,
Takaaki Koga,
Tomoki Machida
Abstract:
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba…
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The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function.
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Submitted 7 August, 2014; v1 submitted 5 August, 2014;
originally announced August 2014.
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Exchange-driven magnetoresistance in silicon facilitated by electrical spin injection
Authors:
Yuichiro Ando,
Lan Qing,
Yang Song,
Shinya Yamada,
Kenji Kasahara,
Kentarou Sawano,
Masanobu Miyao,
Hanan Dery,
Kohei Hamaya
Abstract:
We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed e…
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We use electrical spin injection to probe exchange interactions in phosphorus doped silicon (Si:P). The detection is enabled by a magnetoresistance effect that demonstrates the efficiency of exchange in imprinting spin information from the magnetic lead onto the localized moments in the Si:P region. A unique Lorentzian-shaped signal existing only at low temperatures ($\lesssim 25 K$) is observed experimentally and analyzed theoretically in electrical Hanle effect measurement. It stems from spin-dependent scattering of electrons by neutral impurities in Si:P. The shape of this signal is not directly related to spin relaxation but to exchange interaction between spin-polarized electrons that are localized on adjacent impurities.
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Submitted 18 March, 2014;
originally announced March 2014.
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Large enhancement in the generation efficiency of pure spin currents in Ge using Heusler-compound Co_2FeSi electrodes
Authors:
K. Kasahara,
Y. Fujita,
S. Yamada,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than t…
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We show nonlocal spin transport in n-Ge based lateral spin-valve devices with highly ordered Co_2FeSi/n^+-Ge Schottky tunnel contacts. Clear spin-valve signals and Hanle-effect curves are demonstrated at low temperatures, indicating generation, manipulation, and detection of pure spin currents in n-Ge. The obtained spin generation efficiency of ~ 0.12 is about two orders of magnitude larger than that for a device with Fe/MgO tunnel-barrier contacts reported previously. Taking the spin related behavior with temperature evolution into account, we infer that it is necessary to simultaneously demonstrate the high spin generation efficiency and improve the quality of the transport channel for achieving Ge based spintronic devices.
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Submitted 26 November, 2013;
originally announced November 2013.
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Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
Authors:
T. Obata,
K. Takeda,
J. Kamioka,
T. Kodera,
W. M. Akhtar,
K. Sawano,
S. Oda,
Y. Shiraki,
S. Tarucha
Abstract:
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signa…
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We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.
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Submitted 12 November, 2013;
originally announced November 2013.
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In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
Authors:
Tasuku Chiba,
Ryuichi Masutomi,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexp…
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Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.
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Submitted 10 July, 2013;
originally announced July 2013.
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Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a MOSFET structure
Authors:
K. Hamaya,
Y. Ando,
K. Masaki,
Y. Maeda,
Y. Fujita,
S. Yamada,
K. Sawano,
M. Miyao
Abstract:
Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in…
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Using a metal-oxide-semiconductor field effect transistor (MOSFET) structure with a high-quality CoFe/n^+Si contact, we systematically study spin injection and spin accumulation in a nondegenerated Si channel with a doping density of ~ 4.5*10^15cm^-3 at room temperature. By applying the gate voltage (V_G) to the channel, we obtain sufficient bias currents (I_Bias) for creating spin accumulation in the channel and observe clear spin-accumulation signals even at room temperature. Whereas the magnitude of the spin signals is enhanced by increasing I_Bias, it is reduced by increasing V_G interestingly. These features can be understood within the framework of the conventional spin diffusion model. As a result, a room-temperature spin injection technique for the nondegenerated Si channel without using insulating tunnel barriers is established, which indicates a technological progress for Si-based spintronic applications with gate electrodes.
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Submitted 15 May, 2013; v1 submitted 29 November, 2012;
originally announced November 2012.
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Effect of the magnetic domain structure in the ferromagnetic contact on spin accumulation in silicon
Authors:
Y. Ando,
S. Yamada,
K. Kasahara,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect…
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We show a marked effect of the magnetic domain structure in an epitaxial CoFe contact on the spin accumulation signals in Si detected by three-terminal Hanle-effect measurements. Clear reduction in the spin accumulation signals can be seen by introducing the domain walls in the CoFe contact, caused by the lateral spin transport in the Si channel. The domain walls in the CoFe contact largely affect the spin lifetime and bias-current dependence of the spin signals. These results indicate that the estimation of the spin related properties without considering the domain structure in the contact causes non-negligible errors in the three-terminal Hanle-effect measurements.
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Submitted 1 October, 2012;
originally announced October 2012.
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Evidence for the Presence of Spin Accumulation in Localized States at Ferromagnet-Silicon Interfaces
Authors:
Y. Ando,
S. Yamada,
K. Kasahara,
K. Masaki,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the inte…
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We experimentally show evidence for the presence of spin accumulation in localized states at ferromagnet-silicon interfaces, detected by electrical Hanle effect measurements in CoFe/$n^{+}$-Si/$n$-Si lateral devices. By controlling the measurement temperature, we can clearly observe marked changes in the spin-accumulation signals at low temperatures, at which the electron transport across the interface changes from the direct tunneling to the two-step one via the localized states. We discuss in detail the difference in the spin accumulation between in the Si channel and in the localized states.
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Submitted 4 July, 2012;
originally announced July 2012.
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Temperature evolution of spin accumulation detected electrically in a nondegenerated silicon channel
Authors:
Y. Ando,
K. Kasahara,
S. Yamada,
Y. Maeda,
K. Masaki,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin sign…
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We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the temperature-dependent spin signals between spin-extraction and spin-injection conditions. In a spin-injection condition with a low bias current, the magnitude of spin signals can be enhanced despite the rise of temperature. For the interpretation of the temperature-dependent spin signals, it is important to consider the sensitivity of the spin detection at the Schottky-tunnel-barrier contact in addition to the spin diffusion in Si.
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Submitted 28 January, 2012;
originally announced January 2012.
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Electric-field control of spin accumulation signals in silicon at room temperature
Authors:
Y. Ando,
Y. Maeda,
K. Kasahara,
S. Yamada,
K. Masaki,
Y. Hoshi,
K. Sawano,
K. Izunome,
A. Sakai,
M. Miyao,
K. Hamaya
Abstract:
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be red…
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We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a back-gate voltage, we clearly observe the three-terminal Hanle-effect signal, i.e., spin-accumulation signal. The magnitude of the spin-accumulation signals can be reduced with increasing the gate voltage. We consider that the gate controlled spin signals are attributed to the change in the carrier density in the Si channel beneath the CoFe/$n^{+}$-Si contact. This study is not only a technological jump for Si-based spintronic applications with gate structures but also reliable evidence for the spin injection into the semiconducting Si channel at room temperature.
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Submitted 24 August, 2011;
originally announced August 2011.
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Mechanism of Fermi Level Pinning at Metal/Germanium Interfaces
Authors:
K. Kasahara,
S. Yamada,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with…
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The physical origin of Fermi level pinning (FLP) at metal/Ge interfaces has been argued over a long period. Using the Fe$_{3}$Si/Ge(111) heterostructure developed originally, we can explore electrical transport properties through atomically matched metal/Ge junctions. Unlike the conventional metal/$p$-Ge junctions reported so far, we clearly observe rectifying current-voltage characteristics with a measurable Schottky barrier height, depending on the contact area of the Fe$_{3}$Si/Ge(111) junction. These results indicate that one should distinguish between intrinsic and extrinsic mechanisms for discussing the formation of the Schottky barrier at metal/Ge interfaces. This study will be developed for understanding FLP for almost all the metal/semiconductor interfaces.
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Submitted 18 August, 2011;
originally announced August 2011.
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Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
Authors:
Ryuichi Masutomi,
Kohei Sasaki,
Ippei Yasuda,
Akihito Sekine,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K…
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Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K increases as the electron density $N_s$ decreases, and exceeds unity when $N_s$ approaches the critical density for the metal-insulator transition.
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Submitted 24 May, 2011;
originally announced May 2011.
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Spin accumulation created electrically in an n-type germanium channel using Schottky tunnel contacts
Authors:
K. Kasahara,
Y. Baba,
K. Yamane,
Y. Ando,
S. Yamada,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created…
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Using high-quality Fe$_{3}$Si/$n^{+}$-Ge Schottky-tunnel-barrier contacts, we study spin accumulation in an $n$-type germanium ($n$-Ge) channel. In the three- or two-terminal voltage measurements with low bias current conditions at 50 K, Hanle-effect signals are clearly detected only at a forward-biased contact. These are reliable evidence for electrical detection of the spin accumulation created in the $n$-Ge channel. The estimated spin lifetime in $n$-Ge at 50 K is one order of magnitude shorter than those in $n$-Si reported recently. The magnitude of the spin signals cannot be explained by the commonly used spin diffusion model. We discuss a possible origin of the difference between experimental data and theoretical values.
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Submitted 18 October, 2011; v1 submitted 5 May, 2011;
originally announced May 2011.
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Bias current dependence of spin accumulation signals in a silicon channel detected by a Schottky tunnel contact
Authors:
Y. Ando,
K. Kasahara,
K. Yamane,
Y. Baba,
Y. Maeda,
Y. Hoshi,
K. Sawano,
M. Miyao,
K. Hamaya
Abstract:
We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be…
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We study the electrical detection of spin accumulation at a ferromagnet-silicon interface, which can be verified by measuring a Hanle effect in three-terminal lateral devices. The device structures used consist of a semiconducting Si channel and a high-quality Schottky tunnel contact. In a low current-bias region, the Hanle-effect curves are observed only under forward bias conditions. This can be considered that the electrical detectability of the forward-biased contact is higher than that of the reverse-biased contact. This is possible evidence for the detection of spin-polarized electrons created in a Si channel.
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Submitted 18 July, 2011; v1 submitted 13 April, 2011;
originally announced April 2011.
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Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Type-II Quantum Dots
Authors:
Satoru Miyamoto,
Oussama Moutanabbir,
Toyofumi Ishikawa,
Mikio Eto,
Eugene E. Haller,
Kentarou Sawano,
Yasuhiro Shiraki,
Kohei M. Itoh
Abstract:
We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quan…
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We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quantum dot, the ground state of an exciton experiences a change in its angular momentum. Our results provide the experimental evidence for the phase coherence of a localized electron wave function in group-IV Ge/Si self-assembled quantum structures.
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Submitted 11 February, 2010;
originally announced February 2010.
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Well-width dependence of valley splitting in Si/SiGe quantum wells
Authors:
Kohei Sasaki,
Ryuichi Masutomi,
Kiyohiko Toyama,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the…
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The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.
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Submitted 3 December, 2009; v1 submitted 10 November, 2009;
originally announced November 2009.
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Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
Authors:
H. Morishita,
L. S. Vlasenko,
H. Tanaka,
K. Semba,
K. Sawano,
Y. Shiraki,
M. Eto,
K. M. Itoh
Abstract:
Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $ α| \uparrow \downarrow >+β| \downarrow \uparrow >$ and…
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Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $ α| \uparrow \downarrow >+β| \downarrow \uparrow >$ and $-β| \uparrow \downarrow > + α| \downarrow \uparrow >$ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and $| \uparrow \uparrow >$ or $| \downarrow \downarrow >$ states are observed clearly. A continuous change of $α$ and $β$ with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.
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Submitted 28 October, 2009; v1 submitted 6 July, 2009;
originally announced July 2009.
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Electrical injection and detection of spin-polarized electrons in silicon through an Fe_3Si/Si Schottky tunnel barrier
Authors:
Y. Ando,
K. Hamaya,
K. Kasahara,
Y. Kishi,
K. Ueda,
K. Sawano,
T. Sadoh,
M. Miyao
Abstract:
We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias char…
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We demonstrate electrical injection and detection of spin-polarized electrons in silicon (Si) using epitaxially grown Fe_3Si/Si Schottky-tunnel-barrier contacts. By an insertion of a delta-doped n^+-Si layer (~ 10^19 cm^-3) near the interface between a ferromagnetic Fe_3Si/Si contact and a Si channel (~ 10^15 cm^-3), we achieve a marked enhancement in the tunnel conductance for reverse-bias characteristics of the Fe_3Si/Si Schottky diodes. Using laterally fabricated four-probe geometries with the modified Fe_3Si/Si contacts, we detect nonlocal output signals which originate from the spin accumulation in a Si channel at low temperatures.
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Submitted 6 May, 2009; v1 submitted 20 April, 2009;
originally announced April 2009.
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Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well
Authors:
Tohru Okamoto,
Kohei Sasaki,
Kiyohiko Toyama,
Ryuichi Masutomi,
Kentarou Sawano,
Yasuhiro Shiraki
Abstract:
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or hol…
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We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.
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Submitted 3 June, 2009; v1 submitted 3 March, 2009;
originally announced March 2009.
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Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well
Authors:
Kiyohiko Toyama,
Takahisa Nishioka,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak…
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Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.
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Submitted 2 July, 2008; v1 submitted 26 February, 2008;
originally announced February 2008.
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Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system
Authors:
K. Hamaya,
S. Masubuchi,
K. Hirakawa,
S. Ishida,
Y. Arakawa,
K. Sawano,
Y. Shiraki,
T. Machida
Abstract:
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field d…
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We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.
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Submitted 16 March, 2006;
originally announced March 2006.
